NTSV20H120CT Low Forward Voltage Trench-based Schottky Rectifier Features www.onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PIN CONNECTIONS 1 2, 4 3 4 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 2 TO−220AB CASE 221A STYLE 6 3 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec AY WW TSV20H12G AKA TSV20H12G = Specific Device Code A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 1 1 Publication Order Number: NTSV20H120CT/D NTSV20H120CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 124°C) (Rated VR, TC = 139°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 122°C) (Rated VR, Square Wave, 20 kHz, TC = 137°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 120 V IF(AV) A 20 10 IFRM A 40 20 IFSM 125 A Operating Junction Temperature TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Typical Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 1.7 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 90 V, TJ = 25°C) (VR = 90 V, TJ = 125°C) IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Typ Max 0.679 0.931 − 1.03 0.562 0.653 − 0.71 2.3 2.8 5.0 4.6 Unit V mA mA 35 20 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% ORDERING INFORMATION Device NTSV20H120CTG Package Shipping TO−220AB (Pb−Free) 50 Units / Rail www.onsemi.com 2 NTSV20H120CT TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C 10 TA = 125°C 1 TA = 25°C IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 TA = −40°C 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 10 TA = 125°C 1 TA = 25°C 0.1 1.6 TA = −40°C 0 0.8 0.6 1.0 1.2 1.4 Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.6 1.E+00 1.E−01 TA = 150°C 1.E−02 TA = 150°C 1.E−02 TA = 125°C 1.E−03 TA = 125°C 1.E−03 1.E−04 1.E−04 1.E−05 TA = 25°C 1.E−05 TA = 25°C 1.E−06 1.E−06 0 10 20 30 40 50 60 70 80 1.E−07 90 100 110 120 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 0 10 20 30 40 50 60 70 80 90 100 110 120 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 10,000 20 RqJC = 1.7°C/W TJ = 25°C IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−01 1000 100 10 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E+00 1.E−07 TA = 150°C IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 0.1 1 10 dc 15 Square Wave 10 5 0 100 40 50 60 70 80 90 100 110 120 130 140 150 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Leg www.onsemi.com 3 NTSV20H120CT 40 30 RqJC = 1.7°C/W 35 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS dc 30 25 Square Wave 20 15 10 5 0 40 50 60 70 80 90 100 110 120 130 140 150 IPK/IAV = 20 25 IPK/IAV = 10 TJ = 150°C 20 IPK/IAV = 5 15 10 Square Wave 5 0 dc 0 1 2 3 4 6 5 7 8 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating, Device Figure 8. Forward Power Dissipation 9 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% 20% 10% 0.1 0.01 5% P(pk) 2% t1 1% DUTY CYCLE, D = t1/t2 t2 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 9. Typical Transient Thermal Response www.onsemi.com 4 10 100 1000 NTSV20H120CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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