TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC258 v03.1007 Features The HMC258 is ideal for: Integrated LO Amplifier: 0 dBm Drive • Microwave Point-to-Point Radios Sub-Harmonically Pumped (x2) LO • VSAT High 2LO/RF Isolation: 40 dB • SATCOM Die Size: 0.85 x 1.15 x 0.1 mm Functional Diagram General Description TE Typical Applications LE The HMC258 chip is a compact sub-harmonically pumped (x2) single ended MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs MESFET technology that results in a small overall chip area of 0.9mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+5V) two stage design with only 0 dBm drive requirement. A less stringent oscillator design is made possible by the low LO drive and sub-harmonic nature of the chip. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils). B SO MIXERS - SUB-HARMONIC - CHIP 3 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz O Electrical Specifi cations, TA = +25° C, LO Drive = 0 dBm IF = 1 GHz Vdd = +5.0V Parameter Typ. Max. Min. Typ. Units Max. Frequency Range, RF 14 - 21 17 - 20 GHz Frequency Range, LO 7 - 10.5 8.5 - 10 GHz Frequency Range, IF DC - 3 DC - 3 GHz Conversion Loss 10 13.5 9.5 12 dB Noise Figure (SSB) 10 13.5 9.5 12 dB 2LO to RF Isolation 30 40 34 40 2LO to IF Isolation 30 40 ~ 50 38 40 ~ 50 dB IP3 (Input) 0 7 0 7 dBm 1 dB Compression (Input) -5 0 -4 1 dBm Supply Current (Idd) 3-8 Min. IF = 1 GHz Vdd = +5.0V 50 67 50 dB 67 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC258 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Conversion Gain vs. Temperature @ LO = 0 dBm Isolation @ LO = 0 dBm 0 -10 -10 +25 C -55 C +85 C -20 -40 -60 13 14 15 16 17 18 19 20 21 22 23 13 14 15 16 17 18 19 20 21 22 23 20 22 22 23 RF FREQUENCY (GHz) LE RF FREQUENCY (GHz) Conversion Gain vs. LO Drive Return Loss @ LO = 0 dBm 0 0 0 dBm +2 dBm -10 -15 -2 dBm -4 dBm -20 -25 13 -5 +4 dBm -5 B SO CONVERSION GAIN (dB) -30 -50 -25 14 15 16 17 18 19 20 21 22 -10 -15 -20 -25 IF RF LO -30 -35 -40 23 0 2 4 6 8 RF FREQUENCY (GHz) 10 12 14 16 18 FREQUENCY (GHz) Upconverter Performance Conversion Gain vs. LO Drive O IF Bandwidth @ LO = 0 dBm 0 0 -5 -5 CONVERSION GAIN (dB) IF CONVERSION GAIN (dB) 3 2 LO/IF LO/RF LO/IF 2 LO/RF RF/IF TE -15 -20 MIXERS - SUB-HARMONIC - CHIP ISOLATION (dB) -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 0 -10 -15 -20 -25 -4 dBm -2 dBm 0 dBm +2 dBm +4 dBm -10 -15 -20 -25 0 1 2 3 4 IF FREQUENCY (GHz) 5 6 13 14 15 16 17 18 19 20 21 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-9 HMC258 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Input IP3 vs. Temperature @ LO = 0 dBm 20 15 15 10 10 IP3 (dBm) 20 5 -55 C +25 C +85 C 0 -2 dBm 0 dBm +2 dBm -5 -5 -10 -10 13 14 15 16 17 18 19 20 21 22 23 13 14 15 16 17 18 19 20 21 22 23 RF FREQUENCY (GHz) LE RF FREQUENCY (GHz) Input IP2 vs. LO Drive Input IP2 vs. Temperature @ LO = 0 dBm 60 60 55 55 50 +2 dBm 0 dBm -2 dBm 40 35 30 25 20 13 B SO 45 14 15 16 17 18 19 20 21 22 IP2 (dBm) 50 40 35 30 25 20 13 14 15 RF FREQUENCY (GHz) O mRF ±5 ±4 -57 -18 0 ±1 -9 2 -52 3 -56 -30 RF = 18 GHz @ -10 dBm LO = 8.5 GHz @ 0 dBm All values in dBc below the IF power level 19 20 21 22 23 +25 C -55 C +85 C 0 4 -52 1 18 6 ±2 P1dB (dBm) -44 -1 17 P1dB vs. Temperature @ LO = 0 dBm -3 -2 16 RF FREQUENCY (GHz) nLO ±3 -55 C +25 C +85 C 45 23 MxN Spurious Outputs @ LO Drive = 0 dBm 3 - 10 5 TE 0 IP2 (dBm) MIXERS - SUB-HARMONIC - CHIP 3 IP3 (dBm) Input IP3 vs. LO Drive -26 +20 X -46 -49 2 0 -2 -2 -4 13 14 15 16 17 18 19 20 21 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 22 23 HMC258 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Absolute Maximum Ratings LO Drive (Vdd = +5V) +13 dBm Vdd +10 Vdc Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C NOTE: A 100pF single layer chip bypass capacitor is recommended on the Vdd port no further than 0.762 mm (30 mils) from the HMC258 3 Pad Descriptions 1 2 3 Description Vdd Power supply for the LO Amplifier. An external RF bypass capacitor of 100 - 330 pF is required. A MIM border capacitor is recommended. The bond length to the capacitor should be as short as possible. The ground side of the capacitor should be connected to the housing ground. IF This pad is DC coupled and should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. Any applied DC voltage to this pin will result in die non-function and possible die failure. RF This pad is AC coupled and matched to 50 Ohm. LO This pad is AC coupled and matched to 50 Ohm. Interface Schematic O 4 Function B SO Pad Number LE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MIXERS - SUB-HARMONIC - CHIP +13 dBm TE RF / IF Input (Vdd = +5V) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 11 HMC258 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Outline Drawing TE LE B SO O MIXERS - SUB-HARMONIC - CHIP 3 Die Packaging Information [1] 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BOND PADS ARE .004” SQUARE. Standard Alternate WP-8 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 12 NOTES: 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006”. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC258 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Wire Bond 3 0.076mm (0.003”) TE 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutuctically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. The photo in figure 3 shows a typical assembly for the HMC258 MMIC chip. Figure 1. LE 0.102mm (0.004”) Thick GaAs MMIC Wire Bond B SO 0.076mm (0.003”) Figure 3: Typical HMC258 Assembly Handling Precautions Follow these precautions to avoid permanent damage. RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. O Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. MIXERS - SUB-HARMONIC - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 13