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HMC498
v03.0713
LINEAR & POWER AMPLIFIERS - CHIP
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
Typical Applications
Features
The HMC498 is ideal for:
Output IP3: +34 dBm
• Point-to-Point Radios
Saturated Power: +27 dBm @ 25% PAE
• Point-to-Multi-Point Radios
Gain: 24 dB
• VSAT
Supply Voltage: +5V
• Military & Space
50 Ohm Matched Input/Output
Die Size: 2.38 x 1.46 x 0.1 mm
General Description
Functional Diagram
The HMC498 is a high dynamic range GaAs pHEMT
MMIC Power Amplifier which operates between
17 and 24 GHz. The HMC498 provides 24 dB of gain,
+27 dBm of saturated power and 25% PAE from
a +5V supply voltage. The HMC498 amplifier can
easily be integrated into Multi-Chip-Modules (MCMs)
due to its small size. All data is with the chip in a
50 Ohm test fixture connected via 0.025mm (1 mil)
diameter wire bonds of minimal length 0.31mm (12
mils).
Electrical Specifications, TA = +25° C, Vdd = 5V, Idd = 250mA*
Parameter
Min.
Frequency Range
Gain
20
Gain Variation Over Temperature
Input Return Loss
Max.
Min.
23
28
0.03
0.04
21
Max.
Min.
24
28
0.03
0.04
20
22
Max.
25
21
Units
GHz
23
28
dB
0.03
0.04
dB/ °C
8
18
23.5
Typ.
22 - 24
11
20
20
Typ.
19 - 22
11
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Typ.
17 - 19
dB
15
dB
24
dBm
Saturated Output Power (Psat)
27
26.5
25.5
dBm
Output Third Order Intercept (IP3)
34
34
34
dBm
Noise Figure
3.5
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
250
4.0
275
250
4.5
275
250
dB
275
mA
* Adjust Vgg between -2 to 0V to achieve Idd = 250mA typical.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC498
v03.0713
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
30
26
10
GAIN (dB)
RESPONSE (dB)
20
0
22
18
-10
14
-20
-30
10
12
14
16
18
20
22
24
26
28
16
17
18
19
FREQUENCY (GHz)
S21
S11
22
23
24
25
+85 C
-55 C
Output Return Loss vs. Temperature
0
0
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
21
+25 C
S22
Input Return Loss vs. Temperature
-10
-15
-20
-10
-15
-20
-25
-25
-30
16
17
18
19
20
21
22
23
24
25
16
17
18
FREQUENCY (GHz)
+25 C
19
20
21
22
23
24
25
FREQUENCY (GHz)
+85 C
-55 C
+25 C
P1dB vs. Temperature
+85 C
-55 C
Psat vs. Temperature
30
30
26
26
Psat (dBm)
P1dB (dBm)
20
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIERS - CHIP
30
22
18
14
22
18
14
10
10
16
17
18
19
20
21
22
23
24
25
16
17
18
+25 C
+85 C
19
20
21
22
23
24
25
FREQUENCY (GHz)
FREQUENCY (GHz)
-55 C
+25 C
+85 C
-55 C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC498
v03.0713
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
10
36
8
NOISE FIGURE (dB)
IP3 (dBm)
Noise Figure vs. Temperature
40
32
28
24
6
4
2
20
0
16
17
18
19
20
21
22
23
24
25
16
17
18
19
FREQUENCY (GHz)
+25 C
+85 C
-55 C
21
+25 C
22
23
24
25
+85 C
-55 C
Reverse Isolation vs. Temperature
30
0
-10
ISOLATION (dB)
26
22
18
-20
-30
-40
-50
14
-60
10
-70
3
3.5
4
4.5
5
5.5
16
17
18
19
Vdd Supply Voltage (V)
Gain
20
21
22
23
24
25
FREQUENCY (GHz)
P1dB
Psat
+25 C
+85 C
-55 C
Power Compression @ 24 GHz
Power Compression @ 20 GHz
30
30
27
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
20
FREQUENCY (GHz)
Gain & Power vs. Supply
[email protected] 20 GHz, Idd= 250mA
GAIN (dB), P1dB (dBm), Psat (dBm)
LINEAR & POWER AMPLIFIERS - CHIP
Output IP3 vs. Temperature
24
21
18
15
12
9
6
25
20
15
10
5
3
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
0
-10
-8
-6
INPUT POWER (dBm)
Pout (dBm)
Gain (dB)
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
[1] Footnote if needed
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC498
v03.0713
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5V
Gate Bias Voltage (Vgg)
-4 to 0V
+4.5
241
RF Input Power (RFIN)(Vdd = +5V)
+10 dBm
+5.0
250
Channel Temperature
175 °C
+5.5
258
Continuous Pdiss (T= 85 °C)
(derate 21.4mW/°C above 85 °C)
1.92 W
+3.0
240
Thermal Resistance
(channel to die bottom)
+3.5
250
46.8 °C/W
+4.0
259
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Note: Amplifier will operate over full voltage ranges shown above.
Vgg adjusted to achieve Idd= 250mA at +5V and +3.5V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
LINEAR & POWER AMPLIFIERS - CHIP
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC498
v03.0713
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
LINEAR & POWER AMPLIFIERS - CHIP
Pad Descriptions
5
Pad Number
Function
Description
1
RFIN
This pad is AC coupled and matched to 50 Ohms.
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01 µF are required.
5
RFOUT
This pad is AC coupled and matched to 50 Ohms.
6
Vgg
Gate control for amplifier. Adjust to achieve Idd of 250mA.
Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.01
µF are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC498
v03.0713
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.150mm (0.005”) Thick
Moly Tab
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have
fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
LINEAR & POWER AMPLIFIERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started
on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6