Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC659LC5 v04.0614 LINEAR & POWER AMPLIFIERS - SMT GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Typical Applications Features The HMC659LC5 wideband PA is ideal for: P1dB Output Power: +27.5 dBm • Telecom Infrastructure Gain: 19 dB • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2 Functional Diagram General Description The HMC659LC5 is a GaAs MMIC pHEMT Distributed Power Amplifier which is housed in a leadless 5 x 5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply. Gain flatness is excellent at ±1.4 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 Ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques. Electrical Specifications, TA = +25 °C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 6 16 19 Typ. Max. Min. 6 - 11 15 18 14 Typ. Max. Units 11 - 15 GHz 17 dB Gain Flatness ± 0.7 ± 0.4 ± 0.7 dB Gain Variation Over Temperature 0.015 0.019 0.022 dB/ °C 20 18 17 dB Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 19 23.5 26.5 28.0 20 24.5 27.5 28.5 23.5 15 dB 26.5 dBm 27.5 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 3.0 2.5 3.5 dB Supply Current (Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) 300 300 300 mA *Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC659LC5 v04.0614 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz 22 20 20 15 18 10 16 5 14 0 -5 -10 12 10 8 -15 6 -20 4 -25 2 -30 0 0 5 10 15 20 0 2 4 FREQUENCY (GHz) S21 S11 10 12 14 16 +85 C -40 C Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 8 +25 C S22 Input Return Loss vs. Temperature -10 -15 -20 -10 -15 -20 -25 -30 -25 0 2 4 6 8 10 12 14 16 0 2 4 FREQUENCY (GHz) +25 C 6 8 10 12 14 16 FREQUENCY (GHz) +85 C -40 C Reverse Isolation vs. Temperature +25 C +85 C -40 C Noise Figure vs. Temperature 0 7 -10 6 NOISE FIGURE (dB) ISOLATION (dB) 6 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT Gain vs. Temperature 25 GAIN (dB) RESPONSE (dB) Gain & Return Loss -20 -30 -40 -50 5 4 3 2 1 0 -60 0 2 4 6 8 10 12 14 16 0 2 4 FREQUENCY (GHz) +25 C +85 C 6 8 10 12 14 16 FREQUENCY (GHz) -40 C +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC659LC5 v04.0614 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz 32 30 30 28 28 Psat (dBm) P1dB (dBm) Psat vs. Temperature 32 26 26 24 24 22 22 20 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 FREQUENCY (GHz) +25 C 6 7 8 9 10 11 12 13 14 15 FREQUENCY (GHz) +85 C -40 C +25 C Output IP3 vs. Temperature +85 C -40 C Output IP3 vs. Output Power @ 5GHz 45 50 40 45 IP3 (dBm) IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT Output P1dB vs. Temperature 35 30 40 35 25 30 20 0 2 4 6 8 10 12 14 16 0 2 4 6 +25 C 8 10 12 14 16 18 20 22 24 26 OUTPUT POWER (dBm) FREQUENCY (GHz) +85 C -40 C 7.5V 8.0V 8.5V Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) Gain, Power & Output IP3 vs. Supply Voltage @ 7 GHz, Fixed Vgg 40 30 20 10 7.5 8 8.5 Vdd (V) 3 Gain Psat P1dB IP3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC659LC5 v04.0614 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Power Compression @ 2 GHz Power Compression @ 7 GHz 28 24 20 16 12 8 4 0 28 24 20 16 12 8 4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 15 GHz 6 7 Pout 8 9 10 11 12 13 14 15 Gain PAE Power Dissipation 32 5 28 POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 5 INPUT POWER (dBm) 24 20 16 12 8 4 3 2 1 4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 -10 -5 INPUT POWER (dBm) Pout 0 5 10 15 INPUT POWER (dBm) Gain Max Pdis @ 85C 2 GHz 12 GHz PAE Absolute Maximum Ratings Drain Bias Voltage (Vdd) 9 Vdc Gate Bias Voltage (Vgg1) -2 to 0 Vdc Gate Bias Voltage (Vgg2) RF Input Power (RFIN)(Vdd = +8 Vdc) Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 37 mW/°C above 85 °C) 3.3 W Thermal Resistance (channel to ground paddle) 27.3 °C/W Storage Temperature -65 to 150 °C Operating Temperature -40 to 85 °C ESD Sensitivity (HBM) Class 1A LINEAR & POWER AMPLIFIERS - SMT 32 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 32 Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 7.5 299 +2V to +4V 8.0 300 +20 dBm 8.5 301 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC659LC5 v04.0614 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz LINEAR & POWER AMPLIFIERS - SMT Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. C HARACTERS TO BE LASER MARKED WITH .018” MIN to .030” MAX HEIGHT REQUIREMENTS. UTILIZE MAXIMUM CHARACTER HEIGHT BASED ON LID DIMENSIONS AND BEST FIT. LOCATE APPROX. AS SHOWN. 6. PACKAGE WARP SHALL NOT EXCEED 0.05 mm DATUM -C7. A LL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC659LC5 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H659 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC659LC5 v04.0614 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Pin Descriptions Function Description 1, 2, 4, 7 - 12, 14, 16 - 20, 23 - 30 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 3 Vgg2 Gate Control 2 for amplifier. +3V should be applied to Vgg2 for nominal operation. 5 RFIN This pad is DC coupled and matched to 50 Ohms. 13 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 15 Vgg1 Gate Control 1 for amplifier. 22 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 31 ACG2 32 ACG1 6, 21 Ground Paddle GND Interface Schematic Low frequency termination. Attach bypass capacitor per application circuit herein. LINEAR & POWER AMPLIFIERS - SMT Pin Number Ground paddle must be connected to RF/DC ground. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC659LC5 v04.0614 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz LINEAR & POWER AMPLIFIERS - SMT Application Circuit 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC659LC5 v04.0614 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz LINEAR & POWER AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 117494 Item Description J1, J2 SMA-SRI-NS J3, J4 2 mm Molex Header C1, C2 4.7 µF Capacitor C3 0.1 µF Capacitor, 0603 Pkg. C4, C5 100 pF Capacitor, 0402 Pkg. C6, C7 10k pF Capacitor, 0402 Pkg. C8, C9 0.47 µF Capacitor, 0402 Pkg U1 HMC659LC5 PCB [2] 117492 Evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8