SiA911DJ Datasheet

SiA911DJ
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.094 at VGS = - 4.5 V
- 4.5a
0.131 at VGS = - 2.5 V
- 4.5a
0.185 at VGS = - 1.8 V
a
- 4.5
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Qg (Typ.)
4.9 nC
RoHS
COMPLIANT
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
S
S
PowerPAK SC-70-6 Dual
1
2
1
S1
2
G1
Marking Code
G1
3
D1
D2
D1
6
Part # code
D2
XXX
Lot Traceability
and Date code
G2
5
2.05 mm
4
S2
G2
DCX
2.05 mm
D1
Ordering Information: SiA911DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 20
±8
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TJ, Tstg
Operating Junction and Storage Temperature Range
- 4.5a
- 1.6b, c
6.5
5
IS
PD
Soldering Recommendations (Peak Temperature)d, e
V
- 4.5a
- 4.5a
- 3.6b, c
- 2.9b, c
-8
IDM
Pulsed Drain Current
Unit
1.9b, c
1.2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
52
12.5
Maximum
65
16
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74329
S-80437-Rev. C, 03-Mar-08
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1
SiA911DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
2.1
- 0.4
-1
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
RDS(on)
V
- 16.2
8
µA
A
VGS = - 4.5 V, ID = - 2.8 A
0.078
0.094
VGS = - 2.5 V, ID = - 2.3 A
0.109
0.131
VGS = - 1.8 V, ID = - 0.54 A
0.153
0.185
VDS = - 10 V, ID = - 2.8 A
7
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
355
VDS = - 10 V, VGS = 0 V, f = 1 MHz
pF
75
50
VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A
8.5
12.8
4.9
7.4
0.75
nC
1.2
f = 1 MHz
td(on)
Ω
8
10
15
35
55
40
60
tf
50
75
td(on)
5
10
10
15
VDD = - 10 V, RL = 2.2 Ω
ID ≅ - 4.5 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
td(off)
VDD = - 10 V, RL = 2.2 Ω
ID ≅ - 4.5 A, VGEN = - 8 V, Rg = 1 Ω
tr
td(off)
tf
20
30
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
- 4.5
8
IS = - 4.5 A, VGS = 0 V
- 0.85
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
13
26
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 4.5 A, di/dt = 100 A/µs, TJ = 25 °C
10
15
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74329
S-80437-Rev. C, 03-Mar-08
SiA911DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
2.0
8
1.6
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 2.5 thru 5 V
6
2V
4
1.2
TC = 125 °C
0.8
TC = 25 °C
1.5 V
2
0.4
0
0.0
0.0
0.0
TC = - 55 °C
0.4
0.8
1.2
1.6
2.0
0.3
VDS - Drain-to-Source Voltage (V)
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
0.3
VGS = 1.8 V
C - Capacitance (pF)
R DS (on) - On-Resistance (Ω)
500
0.25
0.2
VGS = 2.5 V
0.15
VGS = 4.5 V
0.1
400
Ciss
300
200
Coss
100
Crss
0
0.05
0
2
4
6
I D - Drain Current (A)
8
0
10
4
8
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
8
ID = 4.5 A
ID = 2.8 A
1.4
6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
VDS = 10 V
4
VDS = 16 V
2
1.2
1.0
VGS = 4.5 V, 2.5 V, 1.8 V
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74329
S-80437-Rev. C, 03-Mar-08
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiA911DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.3
10
TJ = 150 °C
TJ = 25 °C
1
0.25
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
I D = 2.8 A
0.2
TA = 125 °C
0.15
0.1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
0.05
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
20
0.8
0.7
Power (W)
VGS(th) (V)
15
ID = 250 µA
0.6
10
5
0.5
0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
10
1
100
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
Limited by RDS(on)*
1000
IDM limited
ID(on) limited
I D - Drain Current (A)
100 µs
1
1 ms
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 74329
S-80437-Rev. C, 03-Mar-08
SiA911DJ
Vishay Siliconix
8
8
6
6
Power Dissipation (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Package Limited
4
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74329
S-80437-Rev. C, 03-Mar-08
www.vishay.com
5
SiA911DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74329.
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Document Number: 74329
S-80437-Rev. C, 03-Mar-08
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Revision: 02-Oct-12
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Document Number: 91000