Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC463LH250 v04.1010 AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC463LH250 is ideal for: 50 Ohm Matched Input/Output • Telecom Infrastructure Hermetic SMT Package • Microwave Radio & VSAT Gain: 14 dB 3 • Military EW, ECM & C I Noise Figure: 2.5 dB @ Mid-Band • Test Instrumentation P1dB Output Power: +18 dBm @ Mid-Band • Fiber Optics Supply Voltage: +5V @ 60mA Screening to MIL-PRF-38535 (Class B or S) Available Functional Diagram General Description The HMC463LH250 is a GaAs MMIC pHEMT Low Noise AGC Distributed Amplifier packaged in a hermetic surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 3 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at ±0.5 dB from 2 - 14 GHz making the HMC463LH250 ideal for EW, ECM RADAR, test equipment and High-Reliability applications. The HMC463LH250 LNA I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifi cations, TA = +25° C, Vdd= 5V, Vgg2= Open, Idd= 60 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 6.0 11.5 ±0.25 Gain Variation Over Temperature 0.010 Max. Min. 6.0 - 16.0 14.5 Gain Flatness Typ. 9 8 0.010 GHz 11 dB ±0.9 dB 0.010 Input Return Loss 15 15 9 dB Output Return Loss 11 15 7 dB 13 13 dBm 19 dBm Output Third Order Intercept (IP3) 29 27 24 dBm Supply Current (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) 60 60 10 dB 20.5 80 18 5.5 21.5 Saturated Output Power (Psat) 19 4 dB/ °C 3.5 16 4.5 Units Noise Figure Output Power for 1 dB Compression (P1dB) 2.5 Max. 16.0 - 20.0 12 ±0.5 5.5 Typ. 80 60 80 mA * Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical. 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC463LH250 v04.1010 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 20 15 18 10 16 5 14 S21 S11 S22 0 -5 -10 12 10 8 -15 6 -20 4 -25 2 +25C +85C -40C 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -5 RETURN LOSS (dB) -10 +25C +85C -40C -5 +25C +85C -40C -15 -20 -10 -15 AMPLIFIERS - LOW NOISE - SMT 20 -30 RETURN LOSS (dB) 7 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Gain & Return Loss -20 -25 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 -10 +25C +85C -40C -20 -30 -40 +25C +85C -40C 7 6 5 4 3 2 -50 1 0 -60 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC463LH250 v04.1010 Psat vs. Temperature 26 26 22 22 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 18 14 +25C +85C -40C 10 18 10 6 6 2 4 6 8 10 12 14 16 18 20 22 2 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm) 30 28 IP3 (dBm) 26 24 22 +25C +85C -40C 16 14 8 10 12 14 16 18 20 22 24 4.5 22 4 20 3.5 18 3 16 2.5 14 2 12 1.5 10 8 1 GAIN P1dB Psat 0.5 NF 0 6 2 4 6 8 10 12 14 16 18 20 22 4.5 FREQUENCY (GHz) 5 5.5 Vdd (V) Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz Noise Figure & Supply Current vs. Control Voltage @ 10 GHz 32 80 6 70 5 60 4 50 3 40 2 30 1 28 24 Idd (mA) 20 16 12 8 GAIN P1dB IP3 4 0 -4 -1.2 0 20 -1 -0.8 -0.6 -0.4 -0.2 0 Vgg2 (V) 0.2 0.4 0.6 0.8 1 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 Vgg2 (V) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] NOISE FIGURE (dB) GAIN (dB), P1dB (dBm), IP3 (dBm) 6 Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1 32 20 4 FREQUENCY (GHz) Output IP3 vs. Temperature 18 7-3 +25C +85C -40C 14 NOISE FIGURE (dB) AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz HMC463LH250 v04.1010 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 18 Drain Bias Voltage (Vdd) +9 V 14 Gate Bias Voltage (Vgg1) -2 to 0 Vdc 10 Gate Bias Current (Igg1) 2.5 mA Gate Bias Voltage (Vgg2)(AGC) (Vdd -9) Vdc to +2 Vdc 6 2 -2 -6 Vgg2=-1.3 V Vgg2=-1.2 V Vgg2=-1.1 V Vgg2=-1.0 V Vgg2=-0.9 V -10 -14 0 2 4 6 8 10 Vgg2=-0.8 V Vgg2=-0.6 V Vgg2=-0.4 V Vgg2=-0.2 V Vgg2=0 V 12 14 16 18 20 22 FREQUENCY (GHz) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RF Input Power (RFIN)(Vdd = +5 V) +18 dBm Channel Temperature 175 °C Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +4.5 58 +5.0 60 +5.5 62 Outline Drawing AMPLIFIERS - LOW NOISE - SMT GAIN (dB) 7 Absolute Maximum Ratings Gain @ Several Control Voltages NOTES: 1. PACKAGE BODY MATERIAL: CERAMIC & KOVAR 2. LEAD AND GROUND PADDLE PLATING: GOLD 40-80 MICROINCHES. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PAD BURR LENGTH 0.15mm MAX. PAD BURR HEIGHT 0.25mm MAX. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC463LH250 v04.1010 AMPLIFIERS - LOW NOISE - SMT 7 7-5 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Pin Descriptions Pin Number Function Description 1, 2, 4, 5, 7, 8, 10 GND Ground paddle must be connected to RF/DC ground. 3 RFIN This pad is AC coupled and matched to 50 Ohms. 6 Vgg1 Gate control for amplifier. Adjust to achieve Idd= 60 mA. 9 RFOUT This pad is AC coupled and matched to 50 Ohms. 11 Vdd Power supply voltage for the amplifier. External bypass capacitors are required 12 Vgg2 Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC463LH250 v04.1010 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 7 AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 111709 [1] Item Description J1 - J2 SRI K Connector J3 - J4 2 mm Molex Header C1 - C3 100 pF Capacitor, 0402 Pkg. C4 - C6 1000 pF Capacitor, 0603 Pkg. C7 - C9 4.7 μF Capacitor, Tantalum U1 HMC463LH250 PCB [2] 111707 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6