SiR476DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform." R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 17.4576 69.2866 m N/A RT2 25.6216 445.6088 m N/A RT3 8.8790 109.1196 m N/A RT4 2.0418 575.9850 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case CT1 1.5215 11.7400 m Foot N/A CT2 4.9648 210.1211 m N/A CT3 113.2358 m 959.6505 u N/A CT4 14.5687 m 24.7249 m N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 68828 Revision: 03-Jul-08 www.vishay.com 1 SiR476DP_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 4.0018 156.6073 m N/A RF2 7.8355 223.2650 m N/A RF3 25.1329 417.4349 m N/A RF4 17.0298 402.6928 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case CF1 23.9890 m 890.2000 u Foot N/A CF2 97.5121 m 16.6643 m N/A CF3 922.4918 m 2.1855 m N/A CF4 6.2118 157.0029 m N/A Note NA indicates not applicable www.vishay.com 2 Document Number: 68828 Revision: 03-Jul-08 SiR476DP_RC Vishay Siliconix Document Number: 68828 Revision: 03-Jul-08 www.vishay.com 3