New Product SiB800EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21 • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile • Typical ESD Protection 2800 V Qg (Typ.) 1.1 nC SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 30 0.29 at 10 mA 0.4 APPLICATIONS • Portable Devices • DC/DC Converters PowerPAK SC75-6L-Dual D K 1 A 200 Ω 2 Marking Code NC 3 D K K GAX Part # code D 6 G 5 1.60 mm 4 S G XXX Lot Traceability and Date code 1.60 mm Ordering Information: SiB800EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) S A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Drain-Source Voltage (MOSFET) Limit Reverse Voltage (Schottky) VKA 30 Gate-Source Voltage (MOSFET) VGS ±6 TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C IS IF Average Forward Current (Schottky) IFM Pulsed Forward Current (Schottky) TC = 25 °C Maximum Power Dissipation (MOSFET) Soldering Recommendations (Peak Temperature)d, e Document Number: 68860 S-83045-Rev. B, 22-Dec-08 1.3b, c 4 A 1.5a 0.9b, c 0.4b 0.8 3.1 2 1.1b, c PD 0.7b, c 3.1 TC = 70 °C 2 TA = 25 °C 1.1b, c TA = 70 °C Operating Junction and Storage Temperature Range 1.5a, b, c TA = 25 °C TC = 25 °C Maximum Power Dissipation (Schottky) 1.5a TC = 70 °C TA = 70 °C V 1.5a TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) Unit 20 TJ, Tstg 0.7b, c - 55 to 150 260 W °C www.vishay.com 1 New Product SiB800EDK Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC RthJA RthJC t≤5s Steady State t≤5s Steady State Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, f Maximum Junction-to-Case (Drain) (Schottky) Typical 90 32 90 32 Maximum 115 40 115 40 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 125 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Transconductancea gfs Forward Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Rg tr mV/°C - 2.3 1.0 V VDS = 0 V, VGS = ± 3 V ±1 µA VDS = 0 V, VGS = ± 6 V ±1 mA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.6 A 0.4 4 µA A 0.183 0.225 VGS = 2.5 V, ID = 1.5 A 0.220 0.270 VGS = 1.8 V, ID = 1.3 A 0.275 0.345 VGS = 1.5 V, ID = 0.3 A 0.320 0.960 VDS = 10 V, ID = 1.6 A 3.5 VDS = 10 V, VGS = 4.5 V, ID = 1.7 A 0.2 1.1 Ω S 1.7 nC 0.1 f = 1 MHz td(on) td(off) V 21 20 VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω tf Ω 200 30 12 20 70 105 20 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 1.5 4 IS = 1.3 A, VGS = 0 V 0.9 1.2 A V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 68860 S-83045-Rev. B, 22-Dec-08 New Product SiB800EDK Vishay Siliconix SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IF = 10 mA VF Forward Voltage Drop Maximum Reverse Leakage Current Irm Junction Capacitance CT Min. Typ. Max. 0.23 0.29 IF = 10 mA, TJ = 125 °C 0.11 0.14 IF = 0.1 A 0.32 0.38 Vr = 20 V 0.005 0.050 Vr = 20 V, TJ = 85 °C 0.150 1.5 Vr = 15 V 16 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 10 I F - Forward Current (A) I R - Reverse Current (mA) 1 VR = 30 V 10-1 VR = 20 V 10-2 VR = 10 V 10-3 1 TJ = 150 °C 0.1 TJ = 25 °C VR = 5 V 10-4 0 25 50 75 100 125 0.01 0.0 150 0.2 T J - Junction Temperature (°C) 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Reverse Current vs. Junction Temperature Forward Voltage Drop Junction Capacitance (pF) 120 90 60 30 0 0 5 10 15 20 25 30 VKA - Reverse Voltage (V) Capacitance Document Number: 68860 S-83045-Rev. B, 22-Dec-08 www.vishay.com 3 New Product SiB800EDK Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case www.vishay.com 4 Document Number: 68860 S-83045-Rev. B, 22-Dec-08 New Product SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 35 10-1 10-2 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 30 25 20 15 10 10-4 10-5 TJ = 25 °C TJ = 150 °C 10-6 10-7 10-8 5 10-9 0 10-10 0 2 4 6 8 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 4.0 2.0 3.5 VGS = 5 thru 2 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 3.0 2.5 2.0 VGS = 1.5 V 1.5 1.2 0.8 TC = 25 °C 1.0 0.4 TC = 125 °C 0.5 VGS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0.0 0.0 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 0.50 ID = 1.7 A VGS = 1.5 V VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 0.45 VGS = 1.8 V 0.40 0.35 0.30 VGS = 2.5 V 0.25 4 VDS = 10 V VDS = 16 V 2 0.20 VGS = 4.5 V 0.15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.3 0.6 0.9 1.2 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge Document Number: 68860 S-83045-Rev. B, 22-Dec-08 1.5 www.vishay.com 5 New Product SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 1.7 1.6 I S - Source Current (A) VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.6 A 1.4 (Normalized) R DS(on) - On-Resistance 1.5 1.3 1.2 1.1 VGS = 1.5 V; ID = 0.4 A 1.0 1 TJ = 25 °C TJ = 150 °C 0.1 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0.01 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Normalized On-Resistance vs. Junction Temperature 8 1.0 6 Power (W) R DS(on) - On-Resistance (Ω) ID = 1.6 A 0.8 0.6 0.4 4 TJ = 125 °C 2 0.2 TJ = 25 °C 0.0 0 1 2 3 4 0 0.001 5 0.01 0.1 1 10 100 1000 Time (s) VGS - Gate-to-Source Voltage (V) Single Pulse Power, Junction-to-Ambient On-Resistance vs. Gate-to-Source Voltage 0.9 10 Limited by RDS(on)* I D - Drain Current (A) VGS(th) (V) 0.8 0.7 ID = 250 µA 0.6 100 µs 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse 0.5 BVDSS Limited 0.4 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage 100 125 150 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 6 Document Number: 68860 S-83045-Rev. B, 22-Dec-08 New Product SiB800EDK Vishay Siliconix 4 4 3 3 Power Dissipation (W) I D - Drain Current (A) MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Package Limited 2 1 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68860 S-83045-Rev. B, 22-Dec-08 www.vishay.com 7 New Product SiB800EDK Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68860. www.vishay.com 8 Document Number: 68860 S-83045-Rev. 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