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HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Typical Applications
Features
The HMC234C8 is ideal for:
Isolation: 52 dB @ 2 GHz
40 dB @ 6 GHz
• Telecom Infrastructure
Insertion Loss: 1.6 dB Typical @ 6 GHz
• Microwave Radio & VSAT
Non-Reflective Design
• Military Radios, Radar & ECM
Surface Mount Ceramic Package
Functional Diagram
General Description
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The HMC234C8 is a broadband high isolation nonreflective GaAs MESFET SPDT switch in a nonhermetic surface mount ceramic package. Covering
DC to 8 GHz, the switch features >52 dB isolation
up to 2 GHz and >38 dB isolation up to 8 GHz. The
switch operates using complementary negative
control voltage logic lines of -5/0V and requires no
bias supply. This product is an excellent pin-for-pin
replacement to the SMDI SSW124.
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SWITCHES - SMT
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• Test Instrumentation
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Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
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Insertion Loss
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
Isolation
10 - 96
Min.
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
47
35
33
Typ.
Max.
Units
1.4
1.6
2.1
1.7
1.9
2.4
dB
dB
dB
52
40
38
dB
dB
dB
Return Loss
“On State”
DC - 2.0 GHz
DC - 8.0 GHz
15
12
dB
dB
Return Loss RF1, RF2
“Off State”
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
14
9
6
dB
dB
dB
Input Power for 1 dB Compression
0.5 - 8.0 GHz
22
26
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 8.0 GHz
40
46
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
3
5
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Insertion Loss
Isolation
0
0
-20
ISOLATION (dB)
-2
-3
-50
-70
-5
-80
1
2
3
4
5
6
7
8
0
Return Loss
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
10
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FREQUENCY (GHz)
0.1 and 1 dB Input Compression Point
35
0
RFC
RF1, RF2 ON
RF1, RF2 OFF
-5
-20
-25
-30
1
2
3
4
5
FREQUENCY (GHz)
6
7
25
20
1 dB Compression Point
0.1 dB Compression Point
15
8
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
B
0
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-15
INPUT P1dB (dBm)
30
-10
SWITCHES - SMT
0
RETURN LOSS (dB)
-40
-60
+ 25C
+ 85C
- 40C
-4
RF1
RF2
-30
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INSERTION LOSS (dB)
-10
-1
55
INPUT IP3 (dBm)
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Input Third Order Intercept Point
60
50
45
40
+ 25C
+ 85C
- 40C
35
30
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Absolute Maximum Ratings
RF Input Power (Vctl= -5V)
(0.5 - 8 GHz)
+30 dBm (@ +50 °C)
Control Voltage Range (A & B)
+1.0V to -7.5 Vdc
Channel Temperature
150 °C
94 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Bias Condition
Low
0 to -0.2V @ 10 uA Max.
High
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
Truth Table
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Thermal Resistance
State
Control Input
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Signal Path State
A
B
RFC to RF1
RFC to RF2
High
Low
ON
OFF
Low
High
OFF
ON
Caution: Do not “Hot Switch” power levels greater than +26
dBm (Vctl = 0/-5 Vdc).
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SWITCHES - SMT
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Control Voltages
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B
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Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92%
2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER
3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER
ELECTROLYTIC NICKEL 100-250 MICROINCHES.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID
SEAL PROTRUSION .005 PER SIDE.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Pin Number
1, 3, 4
2, 5, 8
Function
Description
GND
Package bottom must also
be connected to PCB RF ground.
RFC, RF1, RF2
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
B
See truth table and control voltage table.
A
See truth table and control voltage table.
B
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Pin Descriptions
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Interface Schematic
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SWITCHES - SMT
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Suggested Driver Circuit
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 99
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
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Evaluation PCB
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SWITCHES - SMT
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List of Materials for Evaluation PCB 105771 [1]
Description
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Item
J1 - J3
PCB Mount SMA RF Connector
J4 - J6
DC Pin
U1
HMC234C8 SPDT Switch
PCB [2]
105707 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
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The circuit board used in the final application should
be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The evaluation circuit board shown above is available from
Hittite Microwave Corporation upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
SWITCHES - SMT
10
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Notes:
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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