27C1512T 512Kb (32K x 16-bit) OTP EPROM MCM Memory Logic Diagram FEATURES: DESCRIPTION: • 32K x 16 Bit OTP EPROM organization • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 Krad (Si), depending upon space mission • Excellent Single Event Effects: - SELTH LET: > 80 MeV/mg/cm2 - SEUTH LET: > 80 Mev/mg/cm2 • Package: - 40 pin RAD-PAK® DIP • Low power consumption: - Active mode: 500 mW @ 10 MHz - Standby mode: < 11 mW • High speed page and word programming: - Page programming time: 14 sec (typ) • Programming power supply: - VPP = 12.5 V ± 0.3 V • One-time Programmable • Pin Arrangement - Flash memory and mask ROM compatible Maxwell Technologies’ 27C1512T high density 512K OneTime Programmable Electrically Programmable Read Only Memory multi-chip module (MCM) features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C1512T features fast address times and low power dissipation. The 27C1512T offers high speed programming using page programming mode. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK® provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K. 01.06.05 REV 4 (858) 503-3300- Fax: (858) 503-3301- www.maxwell.com All data sheets are subject to change without notice 1 ©2005 Maxwell Technologies All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM TABLE 1. 27C1512T PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 21-29, 31-36 A0 - A14 19-12, 10-3 I/O0 - I/O15 Input/Output 2 CE Chip Enable 20 OE Output Enable 40 VCC Power Supply 1 VPP Programming Supply 11, 30 VSS Ground 39 PGM Programming Enable 37, 38 NC Address No Connection Memory TABLE 2. 27C1512T ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage 1 Programming Voltage 1 All Input and Output Voltage A9 Voltage 1,2 2 SYMBOL MIN MAX UNIT VCC -0.6 7.0 V VPP -0.6 13.5 V VIN, VOUT -0.6 7.0 V VID -0.6 13.0 V 14.5 Grams Weight Thermal Impedance ΘJC -- 1.23 °C/W Operating Temperature Range TOPR -55 +125 °C Storage Temperature Range TSTG -65 +150 °C 1. Relative to VSS. 2. VIN, VOUT, and VID min = -1.0V for pulse width < 20 ns. TABLE 3. 27C1512T RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Supply Voltage VCC 4.5 5.5 V Input Voltage VIL VIH -0.3 2.2 0.8 VCC +0.3 V TOPR -55 +125 °C Operating Temperature Range 01.06.05 REV 4 All data sheets are subject to change without notice 2 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM TABLE 4. 27C1512T CAPACITANCE PARAMETER Input Capacitance Output Capacitance 1,2, 3 SYMBOL MIN MAX UNIT CIN -- 10 pF COUT -- 15 pF 1. VIN = VOUT = 0V. 2. TA = 25 oC, f = 1 MHz. 3. Guaranteed by design. TABLE 5. 27C1512T MODE SELECTION 1,2 VPP VCC CE OE PGM A9 I/O READ VCC VCC VIL VIL VIH X DOUT OUTPUT DISABLE VCC VCC VIL VIH VIH X High-Z STANDBY VCC VCC VIH X X X High-Z PROGRAM VPP VCC VIL VIH VIL X DIN PROGRAM VERIFY VPP VCC VIL VIL VIH X DOUT PAGE DATA LATCH VPP VCC VIH VIL VIH X DIN PAGE PROGRAM VPP VCC VIH VIH VIL X High-Z PROGRAM INHIBIT VCC VCC VIL VIL VIL X High-Z VPP VCC VIL VIH VIH X High-Z VPP VCC VIH VIL VIL X High-Z VPP VCC VIH VIH VIH X High-Z VCC VCC VIL VIL VIH VH2 ID IDENTIFIER Memory MODE 1. X = Don’t care. 2. 11.5V < VH < 12.5V. 01.06.05 REV 4 All data sheets are subject to change without notice 3 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM TABLE 6. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (VCC = 5V ±10%, VPP = VSS, TA = -55 TO +125° C, UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITION Input Leakage Current VIN = 5.5V VIN @ 0V ILI ILI Output Leakage Current High Low VOUT = 5.5V VOUT = 0.45V IOH IOL Standby VCC Current CE = VIH ISB 1, 2, 3 -- -- 2 mA Operating VCC Current IOUT = 0 mA, CE = VIL IOUT = 0 mA, f = 5 MHz IOUT = 0 mA, f = 10 MHz ICC1 ICC2 ICC3 1, 2, 3 ---- 60 60 100 ---- mA VPP Current VPP = 5.5V IPP1 -- 1 40 µA SYMBOL SUBGROUPS MIN TYP MAX UNIT -4 --- 2 -- µA µA 1, 2, 3 1, 2, 3 Input Voltage IOH = -800 µ A IOL = 4.2 mA µA 4 -- VIH1 VIL1 1, 2, 3 2.2 -- --- -0.8 V VOH VOL 1, 2, 3 2.4 -- --- -0.45 V Memory Output Voltage ---4.0 TABLE 7. 27C1512T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 5V + 10%, VPP = VSS, TA = -55 TO +125° C, UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITION SYMBOL SUBGOUPS MIN MAX UNIT Address Access Time CE = OE = VIL tACC 9, 10, 11 -- 200 ns Chip Enable Access Time OE = VIL tCE 9, 10, 11 -- 200 ns Output Enable Access TIme CE = VIL tOE 9, 10, 11 -- 70 ns Output Hold to Address Change CE = OE = VIL tOH 9, 10, 11 0 -- ns Output Disable to High-Z 2 CE = VIL tDF 9, 10, 11 0 50 ns 1. Test conditions: - Input pulse levels 0.45V/2.4V - Input rise and fall times < 10 ns - Output load 1 TTL gate + 100pF (including scope and jig) - Referenced levels for measuring timing0.8V/2.0V 2. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. TABLE 8. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2,3,4 (VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25° C +5° C) PARAMETER TEST CONDITION SYMBOL SUBGROUP MIN MAX UNIT Input Leakage Current VIN = 0V to VCC ILI 1 -- 2 µA 01.06.05 REV 4 All data sheets are subject to change without notice 4 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM TABLE 8. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2,3,4 (VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25° C +5° C) PARAMETER TEST CONDITION SYMBOL SUBGROUP MIN MAX UNIT ICC 1 -- 30 mA IPP 1 -- 80 mA VIH 1 2.2 -- V VIL 1 -- 0.8 IOH = -400 µ A VOH 1 2.4 -- IOH = 2.1 mA VOL 1 -- 0.45 Operating VCC Current Operating VPP Current CE = PGM = VIL Input Voltage 5 Output Voltage V 1. VCC must be applied before VPP and removed after VPP. 2. VPP must not exceed 13V, including overshoot. 3. Do not change VPP from VIL to 12.5V or 12.5V to VIL when CE = low. 4. DC electrical parameters for programming operations are not tested. These parameters are guaranteed by design. 5. Device reliability may be adversely be affected if the device is installed or removed while VPP = 12.5V. Memory TABLE 9. 27C1512T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2 (VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = -55 TO +125° C) SYMBOL SUBGROUPS MIN MAX UNIT Address Setup Time tAS 9, 10, 11 2 -- µs Address Hold Time tAH 9, 10, 11 0 -- µs Data Setup Time tDS 9, 10, 11 2 -- µs Data Hold Time tDH 9, 10, 11 2 -- µs Chip Enable Setup TIme tCES 9, 10, 11 2 -- µs VPP Setup Time tVPS 9, 10, 11 2 -- µs VCC Setup Time tVCS 9, 10, 11 2 -- µs Output Enable Setup Time tOES 9, 10, 11 2 -- µs Output Disable Time tDF 3 9, 10, 11 0 130 ns PGM Initial Programming Pulse Width tPW 9, 10, 11 0.19 0.21 ms PGM Overprogramming Pulse Width tOPW 9, 10, 11 0.19 5.25 ms Data Valid from Output Enable Time tOE 9, 10, 11 0 150 ns Output Enable Pulse During Data Latch tLW 9, 10, 11 1 -- µs Output Enable Hold Time tOEH 9, 10, 11 2 -- µs Chip Enable Hold Time tCEH 9, 10, 11 2 -- µs PGM Setup TIme tPGMS 9, 10, 11 2 -- µs PARAMETER 01.06.05 REV 4 All data sheets are subject to change without notice 5 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM 1. Test conditions: - Input pulse levels 0.45V - Input rise and fall times < 20 ns - Referenced levels for measuring timing 0.8V/2.0V 2. AC electrical parameters for programming operations are not tested. These parameters are guaranteed by design. 3. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. FIGURE 1. READ TIMING WAVEFORM Memory 01.06.05 REV 4 All data sheets are subject to change without notice 6 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM FIGURE 2. BYTE PROGRAMMING FLOWCHART START SET PAGE PROG. MODE VPP = 12.5 ± 0.3V VCC = 6.25V ± 0.25V Address = 0 n=0 n+1 n Program tPW = 1 ms ±5% Address Memory Address + 1 NO GO VERIFY GO Program tOPW = 0.2 ms NO n = 25 YES NO Last Address? YES SET READ MODE VCC = 5.0 ± 0.5V VPP = VCC READ All Address NO GO GO END 01.06.05 REV 4 FAIL All data sheets are subject to change without notice 7 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM FIGURE 3. BYTE PROGRAMMING TIMING WAVEFORM Memory 01.06.05 REV 4 All data sheets are subject to change without notice 8 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM FIGURE 4. PAGE PROGRAMMING FLOWCHART START A SET PAGE PROG. MODE VPP = 12.5 ± 0.3V VCC = 6.25V ± 0.25V n+1 n Address = 0 SET PAGE PROG. MODE/VERIFY MODE VPP = 12.5 ± 0.3V VCC = 6.0V ± 0.25V n=0 Latch Address + 1 Address Program tPW = 0.2 ms ±5% Address + 1 Address NO GO VERIFY Latch NO n = 25 GO YES B Latch B Program tOPW = 0.2 ms Memory Address + 1 Address NO Last Address? YES Address + 1 Address SET READ MODE VCC = 5.0 ± 0.5V VPP = VCC Latch NO GO READ All Address A GO END 01.06.05 REV 4 FAIL All data sheets are subject to change without notice 9 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM FIGURE 5. PAGE PROGRAMMING TIMING WAVEFORM Memory 01.06.05 REV 4 All data sheets are subject to change without notice 10 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM Memory 40 PIN RAD-PAK® DIP DIMENSION SYMBOL MIN NOM MAX A -- 0.152 0.225 b 0.014 0.018 0.026 b2 0.045 0.050 0.065 c 0.008 0.010 0.012 D -- 2.000 2.096 E 0.510 0.595 0.620 e 0.100 BSC eA 0.600 BSC eA/2 0.300 BSC L 0.140 0.150 0.160 Q 0.015 0.050 0.070 S1 0.005 0.025 -- S2 0.005 -- -- N 40 Note: All dimensions in inches Because of package size, constant acceleration is less than 3,000 g’s. 01.06.05 REV 4 All data sheets are subject to change without notice 11 ©2005 Maxwell Technologies. All rights reserved. 512Kb (32K x 16-bit) - OTP EPROM MCM 27C1512T Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 01.06.05 REV 4 All data sheets are subject to change without notice 12 ©2005 Maxwell Technologies. All rights reserved. 27C1512T 512Kb (32K x 16-bit) - OTP EPROM MCM Product Ordering Options Model Number 27C1512T RP D X Option Details Feature Multi Chip Module (MCM) K1= Maxwell Self-Defined Class K H1= Maxwell Self-Defined Class H I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) Package D = Dual In-line Package (DIP) Radiation Feature RP = RAD-PAK® package Base Product Nomenclature 512K OneTime Programmable Electrically Programmable Read Only Memory Memory Screening Flow 1) Products are manufactured and screened to Maxwell Technologies self-defined Class Hand Class K flows. 01.06.05 REV 4 All data sheets are subject to change without notice 13 ©2005 Maxwell Technologies. All rights reserved.