27C1512T - PROM, 512kb (32kb x 16)

27C1512T
512Kb (32K x 16-bit)
OTP EPROM MCM
Memory
Logic Diagram
FEATURES:
DESCRIPTION:
• 32K x 16 Bit OTP EPROM organization
• RAD-PAK® radiation-hardened against natural space radiation
• Total dose hardness:
- > 100 Krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SELTH LET: > 80 MeV/mg/cm2
- SEUTH LET: > 80 Mev/mg/cm2
• Package:
- 40 pin RAD-PAK® DIP
• Low power consumption:
- Active mode: 500 mW @ 10 MHz
- Standby mode: < 11 mW
• High speed page and word programming:
- Page programming time: 14 sec (typ)
• Programming power supply:
- VPP = 12.5 V ± 0.3 V
• One-time Programmable
• Pin Arrangement
- Flash memory and mask ROM compatible
Maxwell Technologies’ 27C1512T high density 512K OneTime
Programmable Electrically Programmable Read Only Memory
multi-chip module (MCM) features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
27C1512T features fast address times and low power dissipation. The 27C1512T offers high speed programming using
page programming mode.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K.
01.06.05 REV 4
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
All data sheets are subject to change without notice
1
©2005 Maxwell Technologies
All rights reserved.
27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
TABLE 1. 27C1512T PINOUT DESCRIPTION
PIN
SYMBOL
DESCRIPTION
21-29, 31-36
A0 - A14
19-12, 10-3
I/O0 - I/O15
Input/Output
2
CE
Chip Enable
20
OE
Output Enable
40
VCC
Power Supply
1
VPP
Programming Supply
11, 30
VSS
Ground
39
PGM
Programming Enable
37, 38
NC
Address
No Connection
Memory
TABLE 2. 27C1512T ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage 1
Programming Voltage
1
All Input and Output Voltage
A9 Voltage
1,2
2
SYMBOL
MIN
MAX
UNIT
VCC
-0.6
7.0
V
VPP
-0.6
13.5
V
VIN, VOUT
-0.6
7.0
V
VID
-0.6
13.0
V
14.5
Grams
Weight
Thermal Impedance
ΘJC
--
1.23
°C/W
Operating Temperature Range
TOPR
-55
+125
°C
Storage Temperature Range
TSTG
-65
+150
°C
1. Relative to VSS.
2. VIN, VOUT, and VID min = -1.0V for pulse width < 20 ns.
TABLE 3. 27C1512T RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNITS
Supply Voltage
VCC
4.5
5.5
V
Input Voltage
VIL
VIH
-0.3
2.2
0.8
VCC +0.3
V
TOPR
-55
+125
°C
Operating Temperature Range
01.06.05 REV 4
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©2005 Maxwell Technologies.
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27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
TABLE 4. 27C1512T CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
1,2, 3
SYMBOL
MIN
MAX
UNIT
CIN
--
10
pF
COUT
--
15
pF
1. VIN = VOUT = 0V.
2. TA = 25 oC, f = 1 MHz.
3. Guaranteed by design.
TABLE 5. 27C1512T MODE SELECTION 1,2
VPP
VCC
CE
OE
PGM
A9
I/O
READ
VCC
VCC
VIL
VIL
VIH
X
DOUT
OUTPUT DISABLE
VCC
VCC
VIL
VIH
VIH
X
High-Z
STANDBY
VCC
VCC
VIH
X
X
X
High-Z
PROGRAM
VPP
VCC
VIL
VIH
VIL
X
DIN
PROGRAM VERIFY
VPP
VCC
VIL
VIL
VIH
X
DOUT
PAGE DATA LATCH
VPP
VCC
VIH
VIL
VIH
X
DIN
PAGE PROGRAM
VPP
VCC
VIH
VIH
VIL
X
High-Z
PROGRAM INHIBIT
VCC
VCC
VIL
VIL
VIL
X
High-Z
VPP
VCC
VIL
VIH
VIH
X
High-Z
VPP
VCC
VIH
VIL
VIL
X
High-Z
VPP
VCC
VIH
VIH
VIH
X
High-Z
VCC
VCC
VIL
VIL
VIH
VH2
ID
IDENTIFIER
Memory
MODE
1. X = Don’t care.
2. 11.5V < VH < 12.5V.
01.06.05 REV 4
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©2005 Maxwell Technologies.
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27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
TABLE 6. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5V ±10%, VPP = VSS, TA = -55 TO +125° C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
TEST CONDITION
Input Leakage Current
VIN = 5.5V
VIN @ 0V
ILI
ILI
Output Leakage Current
High
Low
VOUT = 5.5V
VOUT = 0.45V
IOH
IOL
Standby VCC Current
CE = VIH
ISB
1, 2, 3
--
--
2
mA
Operating VCC Current
IOUT = 0 mA, CE = VIL
IOUT = 0 mA, f = 5 MHz
IOUT = 0 mA, f = 10 MHz
ICC1
ICC2
ICC3
1, 2, 3
----
60
60
100
----
mA
VPP Current
VPP = 5.5V
IPP1
--
1
40
µA
SYMBOL SUBGROUPS
MIN
TYP
MAX
UNIT
-4
---
2
--
µA
µA
1, 2, 3
1, 2, 3
Input Voltage
IOH = -800 µ A
IOL = 4.2 mA
µA
4
--
VIH1
VIL1
1, 2, 3
2.2
--
---
-0.8
V
VOH
VOL
1, 2, 3
2.4
--
---
-0.45
V
Memory
Output Voltage
---4.0
TABLE 7. 27C1512T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V + 10%, VPP = VSS, TA = -55 TO +125° C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
TEST CONDITION
SYMBOL
SUBGOUPS
MIN
MAX
UNIT
Address Access Time
CE = OE = VIL
tACC
9, 10, 11
--
200
ns
Chip Enable Access Time
OE = VIL
tCE
9, 10, 11
--
200
ns
Output Enable Access TIme
CE = VIL
tOE
9, 10, 11
--
70
ns
Output Hold to Address Change
CE = OE = VIL
tOH
9, 10, 11
0
--
ns
Output Disable to High-Z 2
CE = VIL
tDF
9, 10, 11
0
50
ns
1. Test conditions:
- Input pulse levels
0.45V/2.4V
- Input rise and fall times
< 10 ns
- Output load
1 TTL gate + 100pF (including scope and jig)
- Referenced levels for measuring timing0.8V/2.0V
2. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2,3,4
(VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25° C +5° C)
PARAMETER
TEST CONDITION
SYMBOL
SUBGROUP
MIN
MAX
UNIT
Input Leakage Current
VIN = 0V to VCC
ILI
1
--
2
µA
01.06.05 REV 4
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©2005 Maxwell Technologies.
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27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
TABLE 8. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2,3,4
(VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25° C +5° C)
PARAMETER
TEST CONDITION
SYMBOL
SUBGROUP
MIN
MAX
UNIT
ICC
1
--
30
mA
IPP
1
--
80
mA
VIH
1
2.2
--
V
VIL
1
--
0.8
IOH = -400 µ A
VOH
1
2.4
--
IOH = 2.1 mA
VOL
1
--
0.45
Operating VCC Current
Operating VPP Current
CE = PGM = VIL
Input Voltage 5
Output Voltage
V
1. VCC must be applied before VPP and removed after VPP.
2. VPP must not exceed 13V, including overshoot.
3. Do not change VPP from VIL to 12.5V or 12.5V to VIL when CE = low.
4. DC electrical parameters for programming operations are not tested. These parameters are guaranteed by design.
5. Device reliability may be adversely be affected if the device is installed or removed while VPP = 12.5V.
Memory
TABLE 9. 27C1512T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2
(VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = -55 TO +125° C)
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Setup Time
tAS
9, 10, 11
2
--
µs
Address Hold Time
tAH
9, 10, 11
0
--
µs
Data Setup Time
tDS
9, 10, 11
2
--
µs
Data Hold Time
tDH
9, 10, 11
2
--
µs
Chip Enable Setup TIme
tCES
9, 10, 11
2
--
µs
VPP Setup Time
tVPS
9, 10, 11
2
--
µs
VCC Setup Time
tVCS
9, 10, 11
2
--
µs
Output Enable Setup Time
tOES
9, 10, 11
2
--
µs
Output Disable Time
tDF 3
9, 10, 11
0
130
ns
PGM Initial Programming Pulse Width
tPW
9, 10, 11
0.19
0.21
ms
PGM Overprogramming Pulse Width
tOPW
9, 10, 11
0.19
5.25
ms
Data Valid from Output Enable Time
tOE
9, 10, 11
0
150
ns
Output Enable Pulse During Data Latch
tLW
9, 10, 11
1
--
µs
Output Enable Hold Time
tOEH
9, 10, 11
2
--
µs
Chip Enable Hold Time
tCEH
9, 10, 11
2
--
µs
PGM Setup TIme
tPGMS
9, 10, 11
2
--
µs
PARAMETER
01.06.05 REV 4
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©2005 Maxwell Technologies.
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27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
1. Test conditions:
- Input pulse levels
0.45V
- Input rise and fall times
< 20 ns
- Referenced levels for measuring timing 0.8V/2.0V
2. AC electrical parameters for programming operations are not tested. These parameters are guaranteed by design.
3. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven.
FIGURE 1. READ TIMING WAVEFORM
Memory
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27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
FIGURE 2. BYTE PROGRAMMING FLOWCHART
START
SET PAGE PROG. MODE
VPP = 12.5 ± 0.3V VCC = 6.25V ± 0.25V
Address = 0
n=0
n+1
n
Program tPW = 1 ms ±5%
Address
Memory
Address + 1
NO GO
VERIFY
GO
Program tOPW = 0.2 ms
NO
n = 25
YES
NO
Last Address?
YES
SET READ MODE
VCC = 5.0 ± 0.5V VPP = VCC
READ All
Address
NO GO
GO
END
01.06.05 REV 4
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©2005 Maxwell Technologies.
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27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
FIGURE 3. BYTE PROGRAMMING TIMING WAVEFORM
Memory
01.06.05 REV 4
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©2005 Maxwell Technologies.
All rights reserved.
27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
FIGURE 4. PAGE PROGRAMMING FLOWCHART
START
A
SET PAGE PROG. MODE
VPP = 12.5 ± 0.3V VCC = 6.25V ± 0.25V
n+1
n
Address = 0
SET PAGE PROG.
MODE/VERIFY MODE
VPP = 12.5 ± 0.3V
VCC = 6.0V ± 0.25V
n=0
Latch
Address + 1
Address
Program tPW = 0.2 ms ±5%
Address + 1
Address
NO GO
VERIFY
Latch
NO
n = 25
GO
YES
B
Latch
B
Program tOPW = 0.2 ms
Memory
Address + 1
Address
NO
Last Address?
YES
Address + 1
Address
SET READ MODE
VCC = 5.0 ± 0.5V VPP = VCC
Latch
NO GO
READ All
Address
A
GO
END
01.06.05 REV 4
FAIL
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©2005 Maxwell Technologies.
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27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
FIGURE 5. PAGE PROGRAMMING TIMING WAVEFORM
Memory
01.06.05 REV 4
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©2005 Maxwell Technologies.
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27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
Memory
40 PIN RAD-PAK® DIP
DIMENSION
SYMBOL
MIN
NOM
MAX
A
--
0.152
0.225
b
0.014
0.018
0.026
b2
0.045
0.050
0.065
c
0.008
0.010
0.012
D
--
2.000
2.096
E
0.510
0.595
0.620
e
0.100 BSC
eA
0.600 BSC
eA/2
0.300 BSC
L
0.140
0.150
0.160
Q
0.015
0.050
0.070
S1
0.005
0.025
--
S2
0.005
--
--
N
40
Note: All dimensions in inches
Because of package size, constant acceleration is less than 3,000 g’s.
01.06.05 REV 4
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©2005 Maxwell Technologies.
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512Kb (32K x 16-bit) - OTP EPROM MCM
27C1512T
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Memory
01.06.05 REV 4
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©2005 Maxwell Technologies.
All rights reserved.
27C1512T
512Kb (32K x 16-bit) - OTP EPROM MCM
Product Ordering Options
Model Number
27C1512T RP
D
X
Option Details
Feature
Multi Chip Module (MCM)
K1= Maxwell Self-Defined Class K
H1= Maxwell Self-Defined Class H
I = Industrial (testing @ -55°C,
+25°C, +125°C)
E = Engineering (testing @ +25°C)
Package
D = Dual In-line Package (DIP)
Radiation Feature
RP = RAD-PAK® package
Base Product
Nomenclature
512K OneTime Programmable
Electrically Programmable Read
Only Memory
Memory
Screening Flow
1) Products are manufactured and screened to Maxwell Technologies self-defined Class Hand Class K flows.
01.06.05 REV 4
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