27C512T - PROM, 512kb (64kb x 8)

27C512T
512K (64K x 8-Bit) OTP EPROM
A5-A9
1024 x 1022
Memory Matrix
x-Decoder
A12-A16
I/O0
Y- Gating
Input
Data
Control
I/O15
Y - Decoder
CE
OE
A0-A4
A10-A11
PGM
VCC
VPP
VSS
H
H
: High Threshhold Inverter
FEATURES:
DESCRIPTION:
• 64K x 8-bit OTP EPROM organization
• RAD-PAK® radiation-hardened against natural space
radiation
• Total dose hardness:
- > 100 Krad (Si), depending upon space mission
• Excellent Single Event Effects:
-SELTH > 80 MeV/mg/cm2
-SEUTH > 80 Mev/mg/cm2
• Package:
-32 pin RAD-PAK® flat pack
-32 pin RAD-PAK® DIP
• Fast access time:
- 120, 150, 200 ns (max)
• Low power dissipation:
- Active mode: 100 mW/MHz (typ)
- Standby mode: 10 µ W (typ)
• Programming power supply:
- VPP = 12.5 V + 0.3 V
• One-time programmable
• Pin arrangement
- JEDEC standard byte-wide EPROM
- Flash memory and mask ROM compatible
Maxwell Technologies’ 27C512T high density 512-Kilobit onetime programmable electrically programmable read only memory microcircuit features a greater than 100 krad (Si) total
dose tolerance, depending upon space mission. The 27C512T
features fast address times and low power dissipation. The
27C512T offers high speed programming using page programming mode.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
06.24.03 Rev 4
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice
1
©2003 Maxwell Technologies
All rights reserved.
Memory
Logic Diagram
27C512T
512K (64K x 8-Bit) OTP EPROM
TABLE 1. 27C512T PINOUT DESCRIPTION
PIN
SYMBOL
DESCRIPTION
1
VPP
Programming Voltage
2, 30
NC
Not connected
12-5, 27, 26, 23,
25, 4, 28, 29, 3
A0-A15
Address Enable
22
CE
Chip Enable
24
OE
Output Enable
13-15, 17-21
I/O0 - I/O7
Data Input/Output
16
GND
Ground
31
PGM
Program
32
VCC
+5V Power Supply
Memory
TABLE 2. 27C512T ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
MAX
UNIT
VCC
-0.6
+7.0
V
VPP
-0.6
+13.5
V
VIN, VOUT
-0.6
+7.0
V
VID
-0.6
13.0
V
Operating Temperature Range
TOPR
-55
+125
°C
Storage Temperature Range
TSTG
-65
+125
°C
Supply Voltage 1
Programming Voltage 1
All Input and Output Voltage
1,2
A9 and OE Voltage
1. Relative to VSS.
2. VIN, VOUT, and VID min = -1.0V for pulse width < 20 ns.
TABLE 3. DELTA LIMITS
PARAMETER
VARIATION
ISB
±10%
ICC1
±10%
ICC2
±10%
ICC3
±10%
06.24.03 REV 4
All data sheets are subject to change without notice
2
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
TABLE 4. 27C512T RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNITS
Supply Voltage
VCC
4.5
5.5
V
Input Voltage
VIL
-0.31
0.8
V
VIH
2.2
VCC +12
--
1.26
°C/W
Thermal Impedance — Flat Package
ΘJC
ΘJC
--
1.27
°C/W
Operating Temperature Range
TOPR
-55
+125
°C
SYMBOL
MIN
MAX
UNIT
CIN
--
10
pF
COUT
--
15
pF
Thermal Impedance — DIP Package
1. VIL min = -1.0V for pulse width < 50 ns.
2. VIH max = VCC + 1.5V for pulse width < 20 ns.
TABLE 5. 27C512T CAPACITANCE 1
PARAMETER
Output Capacitance
Memory
Input Capacitance
1. Guaranteed by design.
TABLE 6. 27C512T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5V + 10%, VPP = VSS TO VCC, TA = -55 TO +125 ° C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
TEST CONDITION
SYMBOL
SUBGRPOUPS
MIN
TYP
MAX
UNIT
Input Leakage Current
VIN = 5.5 V
ILI
1, 2, 3
--
--
2
µA
Output Leakage Current
VOUT = 5.5 V/0.45 V
ILO
1, 2, 3
--
--
2
µA
Standby VCC Current
CE = VIH
ISB
1, 2, 3
--
--
1
mA
Operating VCC Current
IOUT = 0 mA, CE = VIL
ICC1
1, 2, 3
--
--
30
mA
IOUT = 0 mA, f = 5 MHz
ICC2
1, 2, 3
--
--
30
IOUT = 0 mA, f = 10 MHz
ICC3
1, 2, 3
--
--
50
VPP = 5.5 V
IPP1
1, 2, 3
--
1
20
µA
VIH
1, 2, 3
2.2
--
--
V
VIL
1, 2, 3
--
IOH= -400µ A
VOH
1, 2, 3
2.4
--
--
IOL= 2.1 mA
VOL
1, 2, 3
--
--
0.45
VPP Current
Input Voltage
Output Voltage
06.24.03 REV 4
0.8
V
All data sheets are subject to change without notice
3
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
TABLE 7. 27C512T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1,2
(VCC = 5V + 10%, VPP = VSS TO VCC, TA = -55 TO +125 ° C, UNLESS OTHERWISE SPECIFIED)
PARAMENTER
TEST CONDITION
SYMBOL
SUBGRPOUPS
Address Access Time
-120
-150
-200
CE = OE = VIL
tACC
9, 10, 11
Chip Enable Access Time
-120
-150
-200
OE = VIL
Output Enable Access Time
-120
-150
-200
CE = VIL
Output Hold to Address Change
-120
-150
-200
CE = VIL
Output Disable to High-Z3
-120
-150
-200
CE = OE = VIL
tCE
tOE
tOH
MAX
UNIT
----
120
150
200
ns
----
120
150
200
ns
----
60
70
70
ns
0
0
0
----
ns
0
0
0
50
50
50
ns
9, 10, 11
9, 10, 11
9, 10, 11
Memory
tDF
MIN
9, 10, 11
1. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven.
2. AC electrical parameters for programming operations are not tested. These are guaranteed by design.
3. Test conditions:
- Input pulse levels
0.45V/2.4V
- Input rise and fall times
< 10 ns
- Output load
1TTL Fate + 100 pF (including scope and jig)
- Referenced levels for measuring timing
0.8V/2.0V
06.24.03 REV 4
All data sheets are subject to change without notice
4
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
TABLE 8. 27C512T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATION 1,2
(VCC = 6.0V + 0.25V, VPP = 12.5V + 0.3V, TA = 25 ° C)
SUBGROUPS
MIN
TYP
MAX
UNIT
Address Setup Time
tAS
9, 10, 11
2
--
--
µs
Address Hold Time
tAH
9, 10, 11
0
--
--
µs
Data Setup Time
tDS
9, 10, 11
2
--
--
µs
Data Hold Time
tDH
9, 10, 11
2
--
--
µs
VPP Setup Time
tVPS
9, 10, 11
2
--
--
µs
VCC Setup Time
tVCS
9, 10, 11
2
--
--
µs
Output Enable Setup Time
tOES
9, 10, 11
2
--
--
µs
Output Disable Time
tDF3
9, 10, 11
0
--
130
ns
CE Initial Programming Pulse Width
tPW
9, 10, 11
0.19
0.20
0.21
ms
CE Overprogramming Pulse Width
tOPW
9, 10, 11
0.19
--
5.25
ms
Output Enable Hold Time
tOEH
9, 10, 11
2
--
--
µs
VPP Recovery Time
tVR
9, 10, 11
2
--
--
µs
Data Valid from Chip Enable
tDV
9, 10, 11
1
--
--
µs
Memory
SYMBOL
PARAMETER
1. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven.
2. AC electrical parameters for programming operations are not tested. These are guaranteed by design.
3. Test Conditions:
- Input pulse levels
0.45V/2.4V
- Input rise and fall times
< 20 ns
- Referenced levels for measuring timing
0.8V/2.0V
TABLE 9. 27C512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS1,2,3,4
(VCC = 6.0V + 0.25V, VPP = 12.5V + 0.3V, TA = 25 ° C)
PARAMETER
TEST CONDITION
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Input Leakage Current
VIN=0V to VCC
ILI
1, 2, 3
--
2
µA
ICC
1, 2, 3
--
30
mA
IPP
1, 2, 3
--
40
mA
VIH
1, 2, 3
2.2
VCC+0.56
V
VIL
1, 2, 3
-0.17
0.8
IOH=-400µ A
VOH
1, 2, 3
2.4
--
IOH= 2.1mA
VOL
1, 2, 3
--
0.45
Operating VCC Current
Operating VPP Current
CE=PGM=VIL
Input Voltage5
Output Voltage
1.
2.
3.
4.
5.
V
VCC must be applied before VPP and removed after VPP.
VPP must not exceed 13V, including overshoot.
Do not change VPP from VIL to 12.5V or 12.5V to VIL when CE = low.
DC electrical parameters for programming operations are not tested. These are guaranteed by design.
Device reliability may be adversely affected if the device is installed or removed while VPP = 12.5V.
06.24.03 REV 4
All data sheets are subject to change without notice
5
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
6. If VIH is over the specified maximum value, programming operation can not be guaranteed.
7. VIL min = -0.6V for pulse width < 20 ns.
TABLE 10. 27C512T MODE SELECTION
VPP
VCC
CE
OE
PGM
A9
I/O
Read
VCC
VCC
VIL
VIL
VIH
X1
DOUT
Output Disable
VCC
VCC
VIL
VIH
VIH
X
High-Z
Standby
VCC
VCC
VIH
X
X
X
High-Z
Program
VPP
VCC
VIL
VIH
VIL
X
DIN
Program Verify
VPP
VCC
VIL
VIL
VIH
X
DOUT
Page Data Latch
VPP
VCC
VIH
VIL
VIH
X
DIN
Page Program
VPP
VCC
VIH
VIH
VIL
X
High-Z
Program Inhibit
VCC
VCC
VIL
VIL
VIL
X
High-Z
VPP
VCC
VIL
VIH
VIH
X
High-Z
VPP
VCC
VIH
VIL
VIL
X
High-Z
VPP
VCC
VIH
VIH
VIH
X
High-Z
VIH
VH2
ID
Identifier
VCC
VCC
VIL
VIL
Memory
MODE
1. X = Don’t care.
2. 11.5V < VH < 12.5V.
06.24.03 REV 4
All data sheets are subject to change without notice
6
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
FIGURE 1. READ TIMING WAVEFORM
Memory
06.24.03 REV 4
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7
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
FIGURE 2. PAGE PROGRAMMING FLOWCHART
START
SET PAGE PROG. MODE
VPP=12.5+0.3V, VCC=6.0+ 0.25V
A
Address=0
n=0
n+1
n
Latch
NO
Address+1
Address
SET PAGE PROG./
VERIFY MODE
VPP=12.5+0.3V,
VCC=6.0+0.25V
Address+1
Address
n=25
YES
Latch
Memory
Program t PW=0.2ms+5%
Address+1
Address
VERIFY
B
B
Latch
NOGO
GO
Program t OPW=0.2ms
Address+1
Address
NO
Latch
Last
Address?
YES
SET PAGE MODE
VCC=5.0+0.25V, V PP=VCC
A
READ
All Address
NOGO
GO
END
06.24.03 REV 4
FAIL
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8
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
FIGURE 3. PAGE PROGRAMMING TIMING WAVEFORM
Memory
06.24.03 REV 4
All data sheets are subject to change without notice
9
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
FIGURE 4. BYTE PROGRAMMING FLOWCHART
START
SET PROG./VERIFY MODE
VPP=12.5+0.3V, V CC=6.0+0.25V
Address=0
n=0
n+1
n
Program t PW=1ms+5%
Address
VERIFY
Memory
Address+1
NOGO
GO
Program t OPW=0.2ms
NO
n=25
NO
YES
Last
Address?
YES
SET PAGE MODE
VCC=5.0+0.25V, V PP=VCC
READ
All Address
NOGO
GO
END
06.24.03 REV 4
FAIL
All data sheets are subject to change without notice
10
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
FIGURE 5. BYTE PROGRAMMING TIMING WAVEFORM
Memory
DEVICE IDENTIFIER MODE DESCRIPTION
The Device Identifier Mode allows binary codes to be read from the outputs that identify the manufacturer and the type
of device. Using this mode with programming equipment, the device will automatically match its own erase and programming algorithm.
27C512T SERIES IDENTIFIER CODE
IDENTIFIER
A0
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
HEX DATA
MANUFACTURER CODE
VIL
0
0
0
0
0
1
1
1
07
DEVICE CODE
VIH
0
0
1
1
1
0
0
0
38
1.
2.
3.
4.
VCC = 5.0V + 10%.
A9 = 12.0V + 0.5V.
A1-A8, A10-A16, CE, OE = VIL, PGM = VIH.
X = Don’t care.
06.24.03 REV 4
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11
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
Memory
32 PIN RAD-PAK® DUAL IN LINE PACKAGE1
DIMENSION
SYMBOL
MIN
NOM
MAX
A
--
0.215
0.240
b
0.014
0.018
0.026
b2
0.045
0.050
0.065
c
0.008
0.010
0.018
D
--
1.600
1.680
E
0.510
0.590
0.620
eA
0.600 BSC
eA/2
0.300 BSC
e
0.100 BSC
L
0.125
0.145
0.155
Q
0.015
0.035
0.070
S1
0.005
0.025
--
S2
0.005
--
--
N
32
1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type
Constant Acceleration is 3000g’s.
Note: All dimensions in inches
06.24.03 REV 4
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©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
Memory
32 PIN RAD-PAK® FLAT PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.198
0.210
0.220
b
0.015
0.017
0.020
c
0.004
0.005
0.009
D
--
0.820
0.830
E
0.472
0.480
0.488
E1
--
--
0.498
E2
0.300
0.310
--
E3
0.030
0.085
--
e
0.050 BSC
L
0.355
0.365
0.375
Q
0.055
0.065
0.075
S1
0.005
0.027
--
N
32
Note: All dimensions in inches
06.24.03 REV 4
All data sheets are subject to change without notice
13
©2003 Maxwell Technologies
All rights reserved.
512K (64K x 8-Bit) OTP EPROM
27C512T
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Memory
06.24.03 REV 4
All data sheets are subject to change without notice
14
©2003 Maxwell Technologies
All rights reserved.
27C512T
512K (64K x 8-Bit) OTP EPROM
Product Ordering Options
Model Number
27C512T RP
X
X
-XX
Option Details
Feature
12 = 120 ns
15 = 150 ns
20 = 200 ns
Screening Flow
Monolithic
S = Maxwell Class S
B = Maxwell Class B
I = Industrial (testing @ -55°C,
+25°C, +125°C)
E = Engineering (testing @ +25°C)
Package
D = Dual In-line Package (DIP)
F = Flat Pack
Radiation Feature
RP = RAD-PAK® package
Base Product
Nomenclature
512K (64K x 8-Bit) OTP EPROM
06.24.03 REV 4
All data sheets are subject to change without notice
Memory
Access Time
15
©2003 Maxwell Technologies
All rights reserved.
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