28C010T - EEPROM, 1 Mb (128kb x 8) .480” Wide

28C010T
1 Megabit (128K x 8-Bit) EEPROM
FEATURES:
DESCRIPTION:
• 128k x 8-bit EEPROM
• RAD-PAK® radiation-hardened against natural space radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single event effects @ 25°C
- SELTH > 120 MeV cm2/mg (Device)
- SEUTH > 90 MeV cm2/mg(Memory Cells)
- SEU TH > 18 MeV cm2/mg (Write Mode)
- SETTH > 40 MeV cm2/mg (Read Mode)
• Package:
- 32 Pin RAD-PAK® Flat Pack
- 32 Pin RAD-PAK® DUAL INLINE PACKAGE
- JEDEC-approved byte-wide pinout
• High speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode:
- 1 to 128 bytes
• Automatic programming
- 10 ms automatic page/byte write
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µW standby (maximum)
• Standard JEDEC package width
Maxwell Technologies’ 28C010T high-density 1 Megabit
(128K x 8-Bit) EEPROM microcircuit features a greater than
100 krad (Si) total dose tolerance, depending upon space mission. The 28C010T is capable of in-system electrical byte and
page programmability. It has a 128-byte page programming
function to make its erase and write operations faster. It also
features data polling and a Ready/Busy signal to indicate the
completion of erase and programming operations. In the
28C010T, hardware data protection is provided with the RES
pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. The
28C010T is designed for high reliability in the most demanding
space applications.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK® provides greater than 100
krad(Si) radiation dose tolerance. This product is available
with screening up to Class S.
07.31.2013 Rev 16
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All data sheets are subject to change without notice
1
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All rights reserved.
Memory
Logic Diagram
28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 1. 28C010T PINOUT DESCRIPTION
PIN
SYMBOL
DESCRIPTION
12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2
A0-A16
Address
13, 14, 15, 17, 18, 19, 20, 21
I/O0 - I/O7
Data I/O
24
OE
Output Enable
22
CE
Chip Enable
29
WE
Write Enable
32
VCC
Power Supply
16
VSS
Ground
1
RDY/BUSY
30
RES
Ready/Busy
Reset
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Supply Voltage (Relative to VSS)
VCC
-0.6
+7.0
V
Input Voltage (Relative to VSS)
VIN
-0.5 1
+7.0
V
Package Weight
RP
7.4
RT
2.7
RD
10.9
Thermal Impedance (RP and RT Packages)
FJC
2.4
°C/W
Thermal Impedance (DIP Package)
FJC
2.17
°C/W
Operating Temperature Range
TOPR
-55
+125
°C
Storage Temperature Range
TSTG
-65
+150
°C
Memory
TABLE 2. 28C010T ABSOLUTE MAXIMUM RATINGS
Grams
1. VIN min = -3.0V for pulse width < 50ns.
TABLE 3. DELTA LIMITS1
VARIATION2
PARAMETER
ICC1
±10%
ICC2
±10%
ICC3A
±10%
ICC3B
±10%
1. Parameters are measured and recorded as Deltas
per
MIL-STD-883 for Class S Devices
2. Specified in Table 6
07.31.2013 Rev 16
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28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNITS
Supply Voltage
VCC
4.5
5.5
V
Input Voltage
VIL
-0.31
0.8
V
VIH
2.2
VCC +0.3
VH
VCC -0.5
VCC +1
SYMBOL
MIN
MAX
UNITS
CIN
--
6
pF
COUT
--
12
pF
RES_PIN
1. VIL min = -1.0V for pulse width < 50 ns
TABLE 5. 28C010T CAPACITANCE
(TA = 25 °C, f = 1 MHZ)
PARAMETER
Input Capacitance: VIN = 0V 1
Output Capacitance: VOUT = 0V 1
Memory
1. Guaranteed by design.
TABLE 6. 28C010T DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
TEST CONDITION
SUBGROUPS
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
VCC = 5.5V, VIN = 5.5V
1, 2, 3
IIL
--
21
µA
Output Leakage Current
VCC = 5.5V, VOUT = 5.5V/0.4V
1, 2, 3
ILO
--
2
µA
Standby VCC Current
CE = VCC
1, 2, 3
ICC1
--
20
µA
ICC2
--
1
mA
mA
CE = VIH
Operating VCC Current
IOUT = 0mA, Duty = 100%,
Cycle = 1µs at VCC = 5.5V
1, 2, 3
ICC3A
--
15
IOUT = 0mA, Duty = 100%,
Cycle = 150ns at VCC = 5.5V
1, 2, 3
ICC3B
--
50
1, 2, 3
VIL
--
0.8
VIH
2.2
--
VH
VCC -0.5
--
VOL
--
0.4
IOH = - 0.4 mA
VOH
2.4
--
IOH= - 0.1 mA
VOH
VCC-0.3V
Input Voltage
RES_PIN
Output Voltage2
IOL = 2.1 mA
1, 2, 3
V
V
1. ILI for RES = 100uA max.
2. RDY/BSY is an open drain output. Only VOL applies to this pin.
07.31.2013 Rev 16
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All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SUBGROUPS
Address Access Time
CE = OE = VIL, WE = VIH
-120
-150
-200
tACC
9, 10, 11
Chip Enable Access Time
OE = VIL, WE = VIH
-120
-150
-200
tCE
Output Enable Access Time
CE = VIL, WE = VIH
-120
-150
-200
tOE
Output Hold to Address Change
CE = OE = VIL, WE = VIH
-120
-150
-200
tOH
Output Disable to High-Z 2
CE = VIL, WE = VIH
-120
-150
-200
CE = OE = VIL, WE = VIH
-120
-150
-200
RES to Output Delay3
CE = OE = VIL, WE = VIH
-120
-150
-200
MIN
MAX
UNITS
ns
----
120
150
200
9, 10, 11
ns
----
120
150
200
9, 10, 11
ns
0
0
0
75
75
100
9, 10, 11
Memory
SYMBOL
ns
0
0
0
----
9, 10, 11
ns
tDF
tDFR
tRR
0
0
0
50
50
60
0
0
0
300
350
450
9, 10, 11
ns
----
400
450
650
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
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28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR
PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
SYMBOL
SUBGROUPS
Address Setup Time
-120
-150
-200
tAS
9, 10, 11
Chip Enable to Write Setup Time (WE controlled)
-120
-150
-200
tCS
PARAMETER
MAX
0
0
0
----
0
0
0
----
200
250
350
----
200
250
350
----
150
150
200
----
75
100
150
----
10
10
10
----
0
0
0
----
0
0
0
----
0
0
0
----
UNITS
ns
9, 10, 11
ns
9, 10, 11
tCW
ns
Memory
Write Pulse Width
CE controlled
-120
-150
-200
WE controlled
-120
-150
-200
MIN 1
tWP
Address Hold Time
-120
-150
-200
tAH
Data Setup Time
-120
-150
-200
tDS
Data Hold Time
-120
-150
-200
tDH
Chip Enable Hold Time (WE controlled)
-120
-150
-2000
tCH
Write Enable to Write Setup Time (CE controlled)
-120
-150
-200
tWS
Write Enable Hold Time (CE controlled)
-120
-150
-200
tWH
07.31.2013 Rev 16
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
9, 10, 11
ns
ns
9, 10, 11
ns
All data sheets are subject to change without notice
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All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR
PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
SUBGROUPS
Output Enable to Write Setup Time
-120
-150
-200
tOES
9, 10, 11
Output Enable Hold Time
-120
-150
-200
tOEH
Write Cycle Time2
-120
-150
-200
tWC
Data Latch Time
-120
-150
-200
tDL
Byte Load Window
-120
-150
-200
tBL
Byte Load Cycle
-120
-150
-200
tBLC
Time to Device Busy
-120
-150
-200
tDB
Write Start Time3
-120
-150
-200
tDW
RES to Write Setup Time4
-120
-150
-200
tRP
VCC to RES Setup Time4
-120
-150
-200
tRES
MIN 1
MAX
0
0
0
----
0
0
0
----
----
10
10
10
250
300
400
----
100
100
200
----
0.55
0.55
0.95
30
30
30
100
120
170
----
150
150
250
----
100
100
200
----
1
1
3
----
UNITS
ns
9, 10, 11
ns
9, 10, 11
ms
9, 10, 11
ns
9, 10, 11
Memory
SYMBOL
PARAMETER
µs
9, 10, 11
µs
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
µs
9, 10, 11
µs
1. Use this device in a longer cycle than this value.
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28C010T
1 Megabit (128K x 8-Bit) EEPROM
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
TABLE 9. 28C010T MODE SELECTION 1
CE
OE
WE
I/O
RES
RDY/BUSY
Read
VIL
VIL
VIH
DOUT
VH
High-Z
Standby
VIH
X
X
High-Z
X
High-Z
Write
VIL
VIH
VIL
DIN
VH
High-Z --> VOL
Deselect
VIL
VIH
VIH
High-Z
VH
High-Z
Write Inhibit
X
X
VIH
--
X
--
X
VIL
X
--
X
--
Data Polling
VIL
VIL
VIH
Data Out (I/O7)
VH
VOL
Program
X
X
X
High-Z
VIL
High-Z
Memory
PARAMETER
1. X = Don’t care.
FIGURE 1. READ TIMING WAVEFORM
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28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
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28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
Memory
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28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
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28C010T
1 Megabit (128K x 8-Bit) EEPROM
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
Memory
FIGURE 6. DATA POLLING TIMING WAVEFORM
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (ENABLE S/W PROTECTION)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (DISABLE S/W PROTECTION)
Memory
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte
of data can be loaded within 30µs. In case CE and WE are kept high for 100 µs after data input, EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
07.31.2013 Rev 16
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All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle,
the RDY/Busy signal changes state to high impedance.
RES Signal
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
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Memory
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch
function.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at VCC on/off
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES
should be kept high for 10 ms after the last data input.
tRES
tRP
tWC
3. Software Data Protection
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Memory
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during VCC on/off by using a CPU reset signal to RES pin.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
Memory
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All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
Memory
32 PIN DUAL IN-LINE PACKAGE1,2
DIMENSION
SYMBOL
MIN
NOM
MAX
A
--
0.187
0.225
b
0.016
0.018
0.020
b2
0.045
0.050
0.065
c
0.009
0.010
0.012
D
--
1.600
1.616
E
0.510
0.590
0.610
eA
0.600 BSC
eA/2
0.300 BSC
e
0.100 BSC
L
0.135
0.145
0.155
Q
0.015
0.037
0.060
S1
0.005
0.025
--
S2
0.005
--
--
N
32
1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package
type Constant Acceleration is 3000g’s.
Top and Bottom of the package connected internaly to ground.
Note: All dimensions in inches
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All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
D
Memory
28C010T 32-PIN RAD-PAK® FLAT PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.121
0.134
0.147
b
0.015
0.017
0.022
c
0.004
0.005
0.009
D
--
0.820
0.830
E
0.472
0.480
0.488
E1
--
--
0.498
E2
0.304
0.310
--
E3
0.030
0.085
--
e
0.050BSC
L
0.355
0.365
0.375
Q
0.020
0.035
0.045
S1
0.005
0.027
--
N
32
Top and Bottom of the package connected internaly to ground.
Note: All dimensions in inches.
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©2013 Maxwell Technologies
All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
D
Memory
28C010T Rad-Tolerant Flat Package
SYMBOL
DIMENSION
MIN
NOM
MAX
A
0.095
0.109
0.125
b
0.015
0.017
0.022
c
0.004
0.005
0.009
D
--
0.820
0.830
E
0.472
0.480
0.488
E1
--
--
0.498
E2
0.350
0.365
--
E3
0.030
0.085
--
e
0.050BSC
L
0.355
0.365
0.375
Q
0.020
0.035
0.045
S1
0.005
0.027
--
N
32
Note: All Dimentions in Inches
Top and Bottom of the package is connected internally to ground.
07.31.2013 Rev 16
All data sheets are subject to change without notice
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©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Memory
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All rights reserved.
28C010T
1 Megabit (128K x 8-Bit) EEPROM
Product Ordering Options
Model Number
28C010T XX
F
X
-XX
Option Details
Feature
Access Time 12 = 120 ns
15 = 150 ns
20 = 200 ns
Screening Flow
Memory
Package1
Monolithic
S = Maxwell Class S
B = Maxwell Class B
I = Industrial (testing @ -55°C, +25°C, +125°C)
E = Engineering (testing @ +25°C)
D = Dual In-line Package (DIP)1
F = Flat Pack
Radiation Feature2 RP = RAD-PAK® package
RT = No Radiation Guarantee
Class E and I Only
RT1 = 10 Krad (Read/Write)
RT2 = 25 Krad (Read/Write);
RT4 = 40 Krad (Read/Write)
RT6 = 60 Krad (Read/Write)
RT4R = 40 Krad (Read); 25 Krad (Write)
RT6R = 60 Krad (Read), 25 Krad (Write)
Base Product
Nomenclature
1 Megabit (128k x 8-bit) EEPROM
1) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type
Constant Acceleration is 3000g’s.
2.) The device will meet the specified read mode TID level, at the die level, if it is not written to dur-
ing irradiation. Writing to the device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. Writing to the device before irradiation does not alter the device’s read mode
TID level.
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