28C256T - EEPROM, 1 Mb (128kb x 8)

28C256T
256K EEPROM (32K x 8-Bit)
28C256T
Logic Diagram
DESCRIPTION:
• RAD-PAK® radiation-hardened against natural space radiation
• Total dose hardness:
- > 100 Krad (Si), dependent upon space mission
• Excellent Single Event Effects @ 25C:
- SELTH LET: (Device)> 120MeV cm2/mg
- SEUTH LET (Memory Cells): > 90 MeV cm2/mg
- SEUTH LET (Write mode): > 18 MeV cm2/mg
- SEUTH LET (Read mode): > 40 MeV cm2/mg
• Package:
- 28 pin RAD-PAK® flat pack
- 28 pin RAD-PAK® DIP
- JEDEC approved byte wide pinout
• High Speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data
retention
• Page Write Mode:
- 1 to 64 bytes
• Low power dissipation:
- 15mA active current (cycle = 1 µs)
- 20µA standby current (CE = VCC)
Maxwell Technologies’ 28C256T high density 256k-bit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28C256T is capable of in-system electrical byte and page programmability. It has a 64-Byte page programming function to
make its erase and write operations faster. It also features
data polling to indicate the completion of erase and programming operations.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwells’ Class S.
03.20.15 Rev 6
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
All data sheets are subject to change without notice
1
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Memory
FEATURES:
28C256T
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 1. 28C256T PINOUT DESCRIPTION
PIN
SYMBOL
DESCRIPTION
*10-3, 25, 24,
21, 23, 2, 26, 1
A0-A14
11-13, 15-19
I/O0-I/O7
22
OE
Output Enable
20
CE
Chip Enable
27
WE
Write Enable
28
VCC
Power Supply
14
VSS
Ground
Address
Input/Output
*Refer to diagram on Page 1 for pin relationship.
TABLE 2. 28C256T ABSOLUTE MAXIMUM RATINGS
Supply Voltage (Relative to VSS)
Input Voltage (Relative to VSS)
Operating Temperature
Range2
Storage Temperature Range
SYMBOL
MIN
MAX
UNITS
VCC
-0.6
7.0
V
VIN
-0.51
7.0
V
TOPR
-55
125
°C
TSTG
-65
150
°C
Memory
PARAMETER
1. VIN = -3.0 V for pulse width > 50 ns.
2. Including electrical characteristics and data retention.
TABLE 3. 28C256T DELTA LIMITS
PARAMETER
VARIATION
ICC1
±10%
ICC2
±10%
ICC3A
±10%
ICC3B
±10%
03.20.15 Rev 6
All data sheets are subject to change without notice
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 4. 28C256T RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNITS
Supply Voltage
VCC
4.5
5.5
V
Input Voltage
VIL
VIH
VH
-0.31
2.2
VCC -0.5
0.8
VCC +0.3
VCC +1
V
V
V
--
0.87
°C/W
Thermal Impedance — DIP Package
JC
JC
--
0.86
°C/W
Operating Temperature Range
TOPR
-55
125
°C
SYMBOL
MIN
MAX
UNITS
CIN
--
6
pF
COUT
--
12
pF
Thermal Impedance — Flat Package
1. VIL min= -1.0V for pulse width < 50 ns.
TABLE 5. 28C256T CAPACITANCE
PARAMETER
Input Capacitance: VIN = 0V 1
Output Capacitance: VOUT = 0V 1
Memory
(TA = 25 °C, f = 1 MHz)
1. Guaranteed by design.
TABLE 6. 28C256T DC ELECTRICAL CHARACTERISTICS
(VCC =5.0 V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
CONDITIONS
Input Leakage Current
SYMBOL
MIN
MAX
UNITS
VCC = 5.5 V, VIN = 5.5 V
ILI
--
2
uA
Output Leakage Current
VCC =5.5 V, VOUT =5.5 V/0.4 V
ILO
--
2
uA
Standby VCC Current
CE = VCC
ICC1
--
20
uA
CE = VIH
ICC2
--
1
mA
IOUT = 0 mA Duty = 100%
VCC =5.5V Cycle = 1 us
ICC3
--
15
mA
--
50
Operating VCC Current
IOUT = 0mA Duty = 100%
VCC = 5.5 V Cycle = 150 ns
Input Low Voltage
VIL
--
0.8
V
Input High Voltage
VIH
2.2
--
V
VH
VCC -0.5
--
V
Output Low Voltage
ILO = 2.1 mA
VOL
--
0.4
V
Output High Voltage
IOH = -400 uA
VOH
2.4
--
V
03.20.15 Rev 6
All data sheets are subject to change without notice
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION1
(VCC = 5.0V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
tACC
CE to Output Delay OE = VIL, WE = VIH
-120
-150
-200
tCE
Output Enable Access Time CE = VIL, WE = VIH
-120
-150
-200
tOE
Output Hold from Address CE = OE = VIL, WE = VIH
-120
-150
-200
tOH
Output Disable to High-Z CE = VIL, WE = VIH 2
-120
-150
-200
tDF
MAX
----
120
150
200
----
120
150
200
0
0
0
75
75
90
0
0
0
----
0
0
0
50
50
60
UNITS
ns
ns
ns
ns
Memory
Address Access Time CE = OE = VIL, WE = VIH
-120
-150
-200
MIN
ns
1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
(VCC = 5.0V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
Address Setup Time
-120
-150
-200
tAS
CE to Write Setup Time
-120
-150
-200
tCS 2
Chip Enable to Write Setup Time (WE Controlled)
-120
-150
-200
tWS 3
03.20.15 Rev 6
MIN1
TYP
MAX
0
0
0
----
----
0
0
0
----
----
0
0
0
---
---
UNITS
ns
ns
ns
All data sheets are subject to change without notice
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©2015 Maxwell Technologies
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
(VCC = 5.0V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
WE Hold Time
-120
-150
-200
tWH 3
WE Pulse Width
-120
-150
-200
CE Pulse Width
-120
-150
-200
tWP 2
tCW 3
tAH
Data Setup Time
-120
-150
-200
tDS
Data Hold Time
-120
-150
-200
tDH
Chip Enable Hold Time2
-120
-150
-200
tCH
Output Enable to Write Setup Time
-120
-150
-200
tOES
Output Enable Hold Time
-120
-150
-200
tOEH
Data Latch Time4
-120
-150
-200
tDL
Write Cycle Time
-120
-150
-200
tWC
03.20.15 Rev 6
TYP
MAX
0
0
0
----
----
200
250
350
---
---
-----
-----
150
150
150
---
---
75
100
150
---
---
10
10
10
----
----
0
0
0
----
----
0
0
0
----
----
0
0
0
----
----
---
250
300
400
---
----
----
10
10
10
UNITS
ns
ns
200
250
350
ns
Memory
Address Hold Time
-120
-150
-200
MIN1
ns
ns
ns
ns
ns
ns
ms
All data sheets are subject to change without notice
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
(VCC = 5.0V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
Byte Load Window4
-120
-150
-200
tBL
Byte Load Cycle4
-120
-150
-200
tBLC
Write Start Time
-120
-150
-200
tDW
TYP
MAX
----
100
100
200
----
0.55
0.55
0.55
----
30
30
30
150
150
250
----
----
UNITS
us
us
ns
Use this device in a longer cycle than this value.
WE controlled operation.
CE controlled operation.
Not tested.
Memory
1.
2.
3.
4.
MIN1
TABLE 9. 28C256T MODE SELECTION 1
MODE
CE
OE
WE
I/O
Write
VIL
VIL
VIH
DOUT
Standby
VH 2
X
X
HIGH-Z
Write
VIL
VIH
VIL
DIN
Deselect
VIL
VIH
VIH
HIGH-Z
Write Inhibit
X
X
VIH
--
X
VIL
X
--
Data\ Polling
VIL
VIL
VIH
DATA-OUT
(I/O7)
Program
X
X
X
HIGH-Z
1. X = Does not matter.
2. VH = Vcc
03.20.15 Rev 6
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
FIGURE 1. READ TIMING WAVEFORM
03.20.15 Rev 6
Memory
FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
Memory
FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
03.20.15 Rev 6
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
03.20.15 Rev 6
Memory
FIGURE 6. DATA POLLING TIMING WAVEFORM
All data sheets are subject to change without notice
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and the details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write cycle, and allows
the undefined data within 64 bytes to be written corresponding to the undefined address (A0 to A5). Loading the first
byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte of data
can be loaded within 30 µs. When CE and WE are kept high for 150us after data input, EEPROM enters erase and
write mode automatically and only the input data are written into the EEPROM.
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
03.20.15 Rev 6
All data sheets are subject to change without notice
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Memory
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.
28C256T
256K EEPROM (32K x 8-Bit) EEPROM
Memory
28 PIN RAD-PAK® FLAT PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.165
0.177
0.189
b
0.015
0.017
0.022
c
0.003
0.005
0.009
D
--
0.720
0.740
E
0.380
0.410
0.420
E1
--
--
0.440
E2
0.180
0.240
--
E3
0.030
0.085
--
e
0.050 BSC
L
0.390
0.400
0.410
Q
0.040
0.050
0.053
S1
0.005
0.027
--
N
28
F28-03
Note: All dimensions in inches.
03.20.15 Rev 6
All data sheets are subject to change without notice
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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
Memory
28 PIN RAD-PAK® DUAL IN LINE PACKAGE
DIMENSION
SYMBOL
MIN
NOM
MAX
A
--
0.177
0.225
b
0.014
0.018
0.026
b2
0.045
0.050
0.065
c
0.008
0.010
0.018
D
--
1.400
1.485
E
0.510
0.595
0.620
eA
0.600 BSC
eA/2
0.300 BSC
e
0.100 BSC
L
0.140
0.150
0.160
Q
0.015
0.040
0.060
S1
0.005
0.025
--
S2
0.005
--
--
N
28
Note: All dimensions in inches.
03.20.15 Rev 6
All data sheets are subject to change without notice
12
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All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
28C256T
Important Notice:
These data sheets are created using the chip manufacturer’s published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Memory
03.20.15 Rev 6
All data sheets are subject to change without notice
13
©2015 Maxwell Technologies
All rights reserved.
28C256T
256K EEPROM (32K x 8-Bit) EEPROM
Product Ordering Options
Model Number
28C256T XX
X
X
-XX
Option Details
Feature
12 = 120 ns
15 = 150 ns
20 = 200 ns
Screening Flow
Monolithic
S = Maxwell Class S
B = Maxwell Class B
E = Engineering (testing @ +25°C)
I = Industrial (testing @ -55°C,
+25°C, +125°C)
Package
D = Dual In-line Package (DIP)
F = Flat Pack
Radiation Feature
RP = RAD-PAK® package
RT1 = Guaranteed to 10 krad at
die level
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
die level
Base Product
Nomenclature
256K EEPROM (32K x 8-Bit) Low
Voltage EEPROM
03.20.15 Rev 6
All data sheets are subject to change without notice
Memory
Access Time
14
©2015 Maxwell Technologies
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