79C0408 4 Megabit (512k x 8-bit) EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C - SELTH > 120 MeV cm2/mg (Device) - SEUTH > 90 MeV cm2/mg (Memory Cells) - SEU TH > 18 MeV cm2/mg (Write Mode) - SETTH > 40 MeV cm2/mg (Read Mode) • Package: • - 40 pin RAD-PAK® flat pack • - 40 pin X-Ray PakTM flat pack • - 40 pin Rad-Tolerant flat pack • High speed: - 120, 150, and 200 ns maximum access times available • Data Polling and Ready/Busy signal • Software data protection • Write protection by RES pin • High endurance - 10,000 erase/write (in Page Mode), - 10 year data retention • Page write mode: 1 to 128 byte page • Low power dissipation - 80 mW/MHz active mode - 440 µW standby mode Maxwell Technologies’ 79C0408 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79C0408 is the first radiation-hardened 4 Megabit MCM EEPROM for space applications. The 79C0408 uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79C0408 is capable of in-system electrical Byte and Page programmability. It has a 128 bytes Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0408, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, the RAD-PAK® package provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies’ self-defined Class K. 09.17.13 Rev 18 (858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com All data sheets are subject to change without notice 1 ©2013 Maxwell Technologies All rights reserved. Memory Logic Diagram 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM TABLE 1. 79C0408 PIN DESCRIPTION PIN SYMBOL DESCRIPTION 16-9, 32-31, 28, 30, 8, 33, 7, 36, 6 A0 to A16 17-19, 22-26 I/O0 to I/O7 29 OE 2, 3, 39, 38 CE1-4 34 WE Write Enable 1, 27, 40 VCC Power Supply 4, 20, 21, 37 VSS Ground 5 RDY/BUSY 35 RES Address Input Data Input/Output Output Enable Chip Enable 1 through 4 Ready/Busy Reset Memory TABLE 2. 79C0408 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNIT Supply Voltage VCC -0.6 7.0 V Input Voltage VIN -0.51 7.0 V Package Weight RP 23 Grams RT 10 Tjc 7.3 °C/W Thermal Resistance ( RP Package) Operating Temperature Range TOPR -55 125 °C Storage Temperature Range TSTG -65 150 °C 1. VIN MIN = -3.0V FOR PULSE WIDTH <50NS. TABLE 3. 79C0408 RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNIT Supply Voltage VCC 4.5 5.5 V Input Voltage VIL VIH VH -0.31 2.2 VCC-0.5 0.8 VCC +0.3 VCC +1 V V V TC -55 125 °C RES_PIN Case Operating Temperature 1. VIL min = -1.0V for pulse width < 50 ns 09.17.13 Rev 18 All data sheets are subject to change without notice 2 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM TABLE 4. 79C0408 CAPACITANCE1 (TA = 25 °C, f = 1 MHz) PARAMETER SYMBOL Input Capacitance: VIN = 0 V 1 WE CE1-4 OE A0-16 MIN MAX ----- 24 6 24 24 UNIT pf CIN Output Capacitance: VOUT = 0 V 1 COUT 48 pF 1. Guaranteed by design. TABLE 5. DELTA PARAMETERS PARAMETER CONDITION + 10% of value in Table 6 ICC2 + 10% of value in Table 6 ICC3 + 10% of value in Table 6 ICC4 + 10% of value in Table 6 Memory ICC1 TABLE 6. 79C0408 DC ELECTRICAL CHARACTERISTICS (VCC = 5V ±10%, TA = -55 TO +125°C) PARAMETER TEST CONDITION Input Leakage Current VCC = 5.5V, VIN = 5.5V1 SYMBOL SUBGROUPS IIL 1, 2, 3 MIN MAX UNITS µA CE1-4 -- 21 OE, WE -- 8 A0-16 -- 8 -- 8 µA Output Leakage Current VCC = 5.5V, VOUT = 5.5V/0.4V ILO Standby VCC Current CE = VCC ICC1 -- 80 µA CE = VIH ICC2 -- 4 mA IOUT = 0mA, Duty = 100%, Cycle = 1µs at VCC = 5.5V ICC3 1, 2, 3 -- 15 mA IOUT = 0mA, Duty = 100%, Cycle = 150ns at VCC = 5.5V ICC4 1, 2, 3 -- 50 VIL 1, 2, 3 -- 0.8 VIH 2.2 -- VH VCC -0.5 -- -- 0.4 2.4 -- Operating VCC Current2 Input Voltage RES_PIN Output Voltage3 1, 2, 3 IOL = 2.1 mA VOL IOH = -0.4 mA VOH 09.17.13 Rev 18 1, 2, 3 V V All data sheets are subject to change without notice 3 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM 1. ILI on RES = 100 uA max. 2. Only one CE\ Active. 3. RDY/BSY is an open drain output. Only Vol applies to this pin. TABLE 7. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS1 (VCC = 5V ±10%, TA = -55 TO +125°C) PARAMETER SUBGROUPS Address Access Time CE = OE = VIL, WE = VIH -120 -150 -200 tACC 9, 10, 11 Chip Enable Access Time OE = VIL, WE = VIH -120 -150 -200 tCE Output Enable Access Time CE = VIL, WE = VIH -120 -150 -200 tOE Output Hold to Address Change CE = OE = VIL, WE = VIH -120 -150 -200 tOH Output Disable to High-Z2 CE = VIL, WE = VIH -120 -150 -200 tDF CE = OE = VIL, WE = VIH -120 -150 -200 tDFR RES to Output Delay CE = OE = VIL, WE = VIH 3 -120 -150 -200 tRR MIN MAX ---- 120 150 200 ---- 120 150 200 0 0 0 75 75 125 UNIT ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 Memory SYMBOL ns 0 0 0 ---- 9, 10, 11 ns 0 0 0 50 50 60 0 0 0 300 350 450 ---- 400 450 650 9, 10, 11 9, 10, 11 ns 1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. 09.17.13 Rev 18 All data sheets are subject to change without notice 4 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM TABLE 8. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS (VCC = 5V ±10%, TA = -55 TO +125°C) PARAMETER SYMBOL SUBGROUPS Address Setup Time -120 -150 -200 tAS 9, 10, 11 Chip Enable to Write Setup Time (WE Controlled) -120 -150 -200 tCS MAX 0 0 0 ---- 0 0 0 ---- UNIT ns 9, 10, 11 ns 9, 10, 11 ns tCW 200 250 350 ---- 200 250 350 ---- 150 150 200 ---- 75 100 150 ---- 10 10 10 ---- 0 0 0 ---- 0 0 0 ---- 0 0 0 ---- tWP Address Hold Time -120 -150 -200 tAH Data Setup Time -120 -150 -200 tDS Data Hold Time -120 -150 -200 tDH Chip Enable Hold Time (WE Controlled) -120 -150 -200 tCH Write Enable to Write Setup Time (CE Controlled) -120 -150 -200 tWS Write Enable Hold Time (CE Controlled) -120 -150 -200 tWH 09.17.13 Rev 18 9, 10, 11 Memory Write Pulse Width CE Controlled -120 -150 -200 WE Controlled -120 -150 -200 MIN1 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns All data sheets are subject to change without notice 5 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM TABLE 8. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS (VCC = 5V ±10%, TA = -55 TO +125°C) PARAMETER SUBGROUPS Output Enable to Write Setup Time -120 -150 -200 tOES 9, 10, 11 Output Enable Hold Time -120 -150 -200 tOEH Write Cycle Time2 -120 -150 -200 tWC Data Latch Time -120 -150 -200 tDL Byte Load Window -120 -150 -200 tBL Byte Load Cycle -120 -150 -200 tBLC Time to Device Busy -120 -150 -200 tDB Write Start Time3 -120 -150 -200 tDW RES to Write Setup Time -120 -150 -200 tRP VCC to RES Setup Time4 -120 -150 -200 tRES MIN1 MAX 0 0 0 ---- 0 0 0 ---- ---- 10 10 10 250 300 400 ---- 100 100 200 ---- 0.55 0.55 0.95 30 30 30 100 120 170 ---- 150 150 250 ---- 100 100 200 ---- 1 1 3 ---- UNIT ns 9, 10, 11 ns 9, 10, 11 ms 9, 10, 11 ns 9, 10, 11 Memory SYMBOL µs 9, 10, 11 µs 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 µs 9, 10, 11 µs 1. Use this device in a longer cycle than this value. 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 09.17.13 Rev 18 All data sheets are subject to change without notice 6 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Gauranteed by design. TABLE 9. 79C0408 MODE SELECTION 1, 2 CE 3 OE WE I/O RES RDY/BUSY Read VIL VIL VIH DOUT VH High-Z Standby VIH X X High-Z X High-Z Write VIL VIH VIL DIN VH High-Z --> VOL Deselect VIL VIH VIH High-Z VH High-Z Write Inhibit X X VIH -- X -- X VIL X -- X -- Data Polling VIL VIL VIH Data Out (I/O7) VH VOL Program X X X High-Z VIL High-Z PARAMETER 1. X = Don’t care. Memory 2. Refer to the recommended DC operating conditions. 3. For CE1-4 only one CE can be used (“on”) at a time. FIGURE 1. READ TIMING WAVEFORM 09.17.13 Rev 18 All data sheets are subject to change without notice 7 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 09.17.13 Rev 18 All data sheets are subject to change without notice 8 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory 09.17.13 Rev 18 All data sheets are subject to change without notice 9 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 09.17.13 Rev 18 All data sheets are subject to change without notice 10 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) Memory FIGURE 6. DATA POLLING TIMING WAVEFORM 09.17.13 Rev 18 All data sheets are subject to change without notice 11 ©2013 Maxwell Technologies All rights reserved. 4 Megabit (512k x 8-bit) EEPROM MCM 79C0408 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) Memory Toggle Bit Waveform EEPROM APPLICATION NOTES This application note describes the programming procedures for each EEPROM module (four in each MCM) and details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte of data can be loaded within 30 µs. In case CE and WE are kept high for 100 µs after data input, the EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM. 09.17.13 Rev 18 All data sheets are subject to change without notice 12 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM WE CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. 09.17.13 Rev 18 All data sheets are subject to change without notice 13 ©2013 Maxwell Technologies All rights reserved. Memory When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be kept high during read and programming because it doesn’t provide a latch function. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. 2. Data Protection at VCC on/off RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES becomes low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. 10mS min 3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode. 09.17.13 Rev 18 All data sheets are subject to change without notice 14 ©2013 Maxwell Technologies All rights reserved. Memory When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. 4 Megabit (512k x 8-bit) EEPROM MCM 79C0408 Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written. Memory 09.17.13 Rev 18 All data sheets are subject to change without notice 15 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM Memory 40 PIN RAD-PAK® PACKAGE DIMENSIONS DIMENSION SYMBOL MIN NOM MAX A 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D -- 0.850 0.860 E 0.985 0.995 1.005 E1 -- -- 1.025 E2 0.890 0.895 -- E3 0.000 0.050 -- e 0.040 BSC L 0.380 0.390 0.400 Q 0.214 0.245 0.270 S1 0.005 0.038 -- N 40 Note: All dimensions in inches Top and Bottom of package tied internally to ground 09.17.13 Rev 18 All data sheets are subject to change without notice 16 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM 40 LDFP Memory 40 PIN X-RAY-PAKTM FLAT PACKAGE DIMENSIONS DIMENSION SYMBOL MIN NOM MAX A 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D 0.840 0.850 0.860 E 0.985 0.995 1.005 E2 -- 0.785 -- E3 -- 0.105 -- e 0.040 BSC L 0.340 0.350 0.400 Q 0.050 0.065 0.075 S1 -- 0.035 -- N 40 NOTE: All Dimensions in Inches Top and Bottom of package internally tied to ground 09.17.13 Rev 18 All data sheets are subject to change without notice 17 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM Memory 40 PIN RAD-TOLERANT FLAT PACKAGE DIMENSIONS DIMENSION SYMBOL MIN NOM MAX A 0.202 0.224 0.246 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D -- 0.850 0.860 E 0.985 0.995 1.005 E1 -- -- 1.025 E2 0.890 0.895 -- E3 0.000 0.050 -- e 0.040 BSC L 0.380 0.390 0.400 Q 0.190 0.212 0.236 S1 0.005 0.038 -- N 40 NOTE: All Dimensions in Inches Top and Bottom of package tied internally to ground 09.17.13 Rev 18 All data sheets are subject to change without notice 18 ©2013 Maxwell Technologies All rights reserved. 4 Megabit (512k x 8-bit) EEPROM MCM 79C0408 Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 09.17.13 Rev 18 All data sheets are subject to change without notice 19 ©2013 Maxwell Technologies All rights reserved. 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM Product Ordering Options Model Number 79C0408 XX F X Features Option Details -XX Access Time 12 = 120 ns 15 = 150 ns 20 = 200 ns Screening Flow Multi Chip Module (MCM1) K = Maxwell Self-Defined Class K H = Maxwell Self-Defined Class H I = Industrial(Testing at -55C, +25C, +125C) E = Engineering (Tested at +25C) Memory Package F = Flat Pack Radiation Features2 RP = Rad-Pak® Package RT = No Radiation Guarentee (Class E and I Only) RT1 = 10 krad (Read/Write) RT2 = 25 krad (Read/Write) RT4 = 40 krad (Read/Write) RT6 = 60 krad (Read/Write) RT4R = 40 krad (Read); 25 krad (Write) RT6R = 60 krad (Read); 25 krad (Write) XP = Xray Pack Base Product 4 Megabit (512 x 8bit) EEPROM Nomenclature 1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows. 2) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. Writing to the device before irradiation does not alter the device’s read mode TID level. 09.17.13 Rev 18 All data sheets are subject to change without notice 20 ©2013 Maxwell Technologies All rights reserved.