79C0408 - EEPROM, 4 Mb (512kb x 8)

79C0408
4 Megabit (512k x 8-bit)
EEPROM MCM
CE1
CE2
CE3
CE4
RES
R/B
WE
OE
79C0408
A0-16
128K x 8
128K x 8
128K x 8
128K x 8
I/O0-7
FEATURES
DESCRIPTION:
• Four 128k x 8-bit EEPROMs MCM
• RAD-PAK® radiation-hardened against natural
space radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single event effects @ 25°C
- SELTH > 120 MeV cm2/mg (Device)
- SEUTH > 90 MeV cm2/mg (Memory Cells)
- SEU TH > 18 MeV cm2/mg (Write Mode)
- SETTH > 40 MeV cm2/mg (Read Mode)
• Package:
• - 40 pin RAD-PAK® flat pack
• - 40 pin X-Ray PakTM flat pack
• - 40 pin Rad-Tolerant flat pack
• High speed:
- 120, 150, and 200 ns maximum access times
available
• Data Polling and Ready/Busy signal
• Software data protection
• Write protection by RES pin
• High endurance
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode: 1 to 128 byte page
• Low power dissipation
- 80 mW/MHz active mode
- 440 µW standby mode
Maxwell Technologies’ 79C0408 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM
packaging technology, the 79C0408 is the first radiation-hardened 4 Megabit MCM EEPROM for space applications. The
79C0408 uses four 1 Megabit high-speed CMOS die to yield a
4 Megabit product. The 79C0408 is capable of in-system electrical Byte and Page programmability. It has a 128 bytes Page
Programming function to make its erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C0408, hardware data protection is provided with the
RES pin, in addition to noise protection on the WE signal.
Software data protection is implemented using the JEDEC
optional standard algorithm.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, the RAD-PAK® package provides
greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies’
self-defined Class K.
09.17.13 Rev 18
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
All data sheets are subject to change without notice
1
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All rights reserved.
Memory
Logic Diagram
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 1. 79C0408 PIN DESCRIPTION
PIN
SYMBOL
DESCRIPTION
16-9, 32-31,
28, 30, 8, 33,
7, 36, 6
A0 to A16
17-19, 22-26
I/O0 to I/O7
29
OE
2, 3, 39, 38
CE1-4
34
WE
Write Enable
1, 27, 40
VCC
Power Supply
4, 20, 21, 37
VSS
Ground
5
RDY/BUSY
35
RES
Address Input
Data Input/Output
Output Enable
Chip Enable 1 through 4
Ready/Busy
Reset
Memory
TABLE 2. 79C0408 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
VCC
-0.6
7.0
V
Input Voltage
VIN
-0.51
7.0
V
Package Weight
RP
23
Grams
RT
10
Tjc
7.3
°C/W
Thermal Resistance ( RP Package)
Operating Temperature Range
TOPR
-55
125
°C
Storage Temperature Range
TSTG
-65
150
°C
1. VIN MIN = -3.0V FOR PULSE WIDTH <50NS.
TABLE 3. 79C0408 RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
VCC
4.5
5.5
V
Input Voltage
VIL
VIH
VH
-0.31
2.2
VCC-0.5
0.8
VCC +0.3
VCC +1
V
V
V
TC
-55
125
°C
RES_PIN
Case Operating Temperature
1. VIL min = -1.0V for pulse width < 50 ns
09.17.13 Rev 18
All data sheets are subject to change without notice
2
©2013 Maxwell Technologies
All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 4. 79C0408 CAPACITANCE1
(TA = 25 °C, f = 1 MHz)
PARAMETER
SYMBOL
Input Capacitance: VIN = 0 V 1
WE
CE1-4
OE
A0-16
MIN
MAX
-----
24
6
24
24
UNIT
pf
CIN
Output Capacitance: VOUT = 0 V 1
COUT
48
pF
1. Guaranteed by design.
TABLE 5. DELTA PARAMETERS
PARAMETER
CONDITION
+ 10% of value in Table 6
ICC2
+ 10% of value in Table 6
ICC3
+ 10% of value in Table 6
ICC4
+ 10% of value in Table 6
Memory
ICC1
TABLE 6. 79C0408 DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
TEST CONDITION
Input Leakage Current
VCC = 5.5V, VIN = 5.5V1
SYMBOL
SUBGROUPS
IIL
1, 2, 3
MIN
MAX
UNITS
µA
CE1-4
--
21
OE, WE
--
8
A0-16
--
8
--
8
µA
Output Leakage Current VCC = 5.5V, VOUT = 5.5V/0.4V
ILO
Standby VCC Current
CE = VCC
ICC1
--
80
µA
CE = VIH
ICC2
--
4
mA
IOUT = 0mA, Duty = 100%,
Cycle = 1µs at VCC = 5.5V
ICC3
1, 2, 3
--
15
mA
IOUT = 0mA, Duty = 100%,
Cycle = 150ns at VCC = 5.5V
ICC4
1, 2, 3
--
50
VIL
1, 2, 3
--
0.8
VIH
2.2
--
VH
VCC -0.5
--
--
0.4
2.4
--
Operating VCC Current2
Input Voltage
RES_PIN
Output Voltage3
1, 2, 3
IOL = 2.1 mA
VOL
IOH = -0.4 mA
VOH
09.17.13 Rev 18
1, 2, 3
V
V
All data sheets are subject to change without notice
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All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
1. ILI on RES = 100 uA max.
2. Only one CE\ Active.
3. RDY/BSY is an open drain output. Only Vol applies to this pin.
TABLE 7. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS1
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
SUBGROUPS
Address Access Time CE = OE = VIL, WE = VIH
-120
-150
-200
tACC
9, 10, 11
Chip Enable Access Time OE = VIL, WE = VIH
-120
-150
-200
tCE
Output Enable Access Time CE = VIL, WE = VIH
-120
-150
-200
tOE
Output Hold to Address Change CE = OE = VIL, WE = VIH
-120
-150
-200
tOH
Output Disable to High-Z2
CE = VIL, WE = VIH
-120
-150
-200
tDF
CE = OE = VIL, WE = VIH
-120
-150
-200
tDFR
RES to Output Delay CE = OE = VIL, WE = VIH 3
-120
-150
-200
tRR
MIN
MAX
----
120
150
200
----
120
150
200
0
0
0
75
75
125
UNIT
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
Memory
SYMBOL
ns
0
0
0
----
9, 10, 11
ns
0
0
0
50
50
60
0
0
0
300
350
450
----
400
450
650
9, 10, 11
9, 10, 11
ns
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
09.17.13 Rev 18
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79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 8. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
SYMBOL
SUBGROUPS
Address Setup Time
-120
-150
-200
tAS
9, 10, 11
Chip Enable to Write Setup Time (WE Controlled)
-120
-150
-200
tCS
MAX
0
0
0
----
0
0
0
----
UNIT
ns
9, 10, 11
ns
9, 10, 11
ns
tCW
200
250
350
----
200
250
350
----
150
150
200
----
75
100
150
----
10
10
10
----
0
0
0
----
0
0
0
----
0
0
0
----
tWP
Address Hold Time
-120
-150
-200
tAH
Data Setup Time
-120
-150
-200
tDS
Data Hold Time
-120
-150
-200
tDH
Chip Enable Hold Time (WE Controlled)
-120
-150
-200
tCH
Write Enable to Write Setup Time (CE Controlled)
-120
-150
-200
tWS
Write Enable Hold Time (CE Controlled)
-120
-150
-200
tWH
09.17.13 Rev 18
9, 10, 11
Memory
Write Pulse Width
CE Controlled
-120
-150
-200
WE Controlled
-120
-150
-200
MIN1
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
ns
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All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 8. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
SUBGROUPS
Output Enable to Write Setup Time
-120
-150
-200
tOES
9, 10, 11
Output Enable Hold Time
-120
-150
-200
tOEH
Write Cycle Time2
-120
-150
-200
tWC
Data Latch Time
-120
-150
-200
tDL
Byte Load Window
-120
-150
-200
tBL
Byte Load Cycle
-120
-150
-200
tBLC
Time to Device Busy
-120
-150
-200
tDB
Write Start Time3
-120
-150
-200
tDW
RES to Write Setup Time
-120
-150
-200
tRP
VCC to RES Setup Time4
-120
-150
-200
tRES
MIN1
MAX
0
0
0
----
0
0
0
----
----
10
10
10
250
300
400
----
100
100
200
----
0.55
0.55
0.95
30
30
30
100
120
170
----
150
150
250
----
100
100
200
----
1
1
3
----
UNIT
ns
9, 10, 11
ns
9, 10, 11
ms
9, 10, 11
ns
9, 10, 11
Memory
SYMBOL
µs
9, 10, 11
µs
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
µs
9, 10, 11
µs
1. Use this device in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
09.17.13 Rev 18
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All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
TABLE 9. 79C0408 MODE SELECTION 1, 2
CE 3
OE
WE
I/O
RES
RDY/BUSY
Read
VIL
VIL
VIH
DOUT
VH
High-Z
Standby
VIH
X
X
High-Z
X
High-Z
Write
VIL
VIH
VIL
DIN
VH
High-Z --> VOL
Deselect
VIL
VIH
VIH
High-Z
VH
High-Z
Write Inhibit
X
X
VIH
--
X
--
X
VIL
X
--
X
--
Data Polling
VIL
VIL
VIH
Data Out (I/O7)
VH
VOL
Program
X
X
X
High-Z
VIL
High-Z
PARAMETER
1. X = Don’t care.
Memory
2. Refer to the recommended DC operating conditions.
3. For CE1-4 only one CE can be used (“on”) at a time.
FIGURE 1. READ TIMING WAVEFORM
09.17.13 Rev 18
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79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
09.17.13 Rev 18
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79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
Memory
09.17.13 Rev 18
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79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
09.17.13 Rev 18
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79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
Memory
FIGURE 6. DATA POLLING TIMING WAVEFORM
09.17.13 Rev 18
All data sheets are subject to change without notice
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All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
Memory
Toggle Bit Waveform
EEPROM APPLICATION NOTES
This application note describes the programming procedures for each EEPROM module (four in each MCM) and
details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte
of data can be loaded within 30 µs. In case CE and WE are kept high for 100 µs after data input, the EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
09.17.13 Rev 18
All data sheets are subject to change without notice
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All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle,
the RDY/Busy signal changes state to high impedance.
RES Signal
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
09.17.13 Rev 18
All data sheets are subject to change without notice
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©2013 Maxwell Technologies
All rights reserved.
Memory
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES low when VCC is switched. RES should be kept high during read and programming because it doesn’t provide a
latch function.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at VCC on/off
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
becomes low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES
should be kept high for 10 ms after the last data input.
10mS min
3. Software Data Protection
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.
09.17.13 Rev 18
All data sheets are subject to change without notice
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All rights reserved.
Memory
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during VCC on/off by using a CPU reset signal to RES pin.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
Memory
09.17.13 Rev 18
All data sheets are subject to change without notice
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©2013 Maxwell Technologies
All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
Memory
40 PIN RAD-PAK® PACKAGE DIMENSIONS
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.248
0.274
0.300
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
--
0.850
0.860
E
0.985
0.995
1.005
E1
--
--
1.025
E2
0.890
0.895
--
E3
0.000
0.050
--
e
0.040 BSC
L
0.380
0.390
0.400
Q
0.214
0.245
0.270
S1
0.005
0.038
--
N
40
Note: All dimensions in inches
Top and Bottom of package tied internally to ground
09.17.13 Rev 18
All data sheets are subject to change without notice
16
©2013 Maxwell Technologies
All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
40 LDFP
Memory
40 PIN X-RAY-PAKTM FLAT PACKAGE DIMENSIONS
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.248
0.274
0.300
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
0.840
0.850
0.860
E
0.985
0.995
1.005
E2
--
0.785
--
E3
--
0.105
--
e
0.040 BSC
L
0.340
0.350
0.400
Q
0.050
0.065
0.075
S1
--
0.035
--
N
40
NOTE: All Dimensions in Inches
Top and Bottom of package internally tied to ground
09.17.13 Rev 18
All data sheets are subject to change without notice
17
©2013 Maxwell Technologies
All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
Memory
40 PIN RAD-TOLERANT FLAT PACKAGE DIMENSIONS
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.202
0.224
0.246
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
--
0.850
0.860
E
0.985
0.995
1.005
E1
--
--
1.025
E2
0.890
0.895
--
E3
0.000
0.050
--
e
0.040 BSC
L
0.380
0.390
0.400
Q
0.190
0.212
0.236
S1
0.005
0.038
--
N
40
NOTE: All Dimensions in Inches
Top and Bottom of package tied internally to ground
09.17.13 Rev 18
All data sheets are subject to change without notice
18
©2013 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Memory
09.17.13 Rev 18
All data sheets are subject to change without notice
19
©2013 Maxwell Technologies
All rights reserved.
79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
Product Ordering Options
Model Number
79C0408
XX
F
X
Features
Option Details
-XX
Access Time 12 = 120 ns
15 = 150 ns
20 = 200 ns
Screening Flow Multi Chip Module (MCM1)
K = Maxwell Self-Defined Class K
H = Maxwell Self-Defined Class H
I = Industrial(Testing at -55C, +25C, +125C)
E = Engineering (Tested at +25C)
Memory
Package
F = Flat Pack
Radiation Features2 RP = Rad-Pak® Package
RT = No Radiation Guarentee (Class E and I Only)
RT1 = 10 krad (Read/Write)
RT2 = 25 krad (Read/Write)
RT4 = 40 krad (Read/Write)
RT6 = 60 krad (Read/Write)
RT4R = 40 krad (Read); 25 krad (Write)
RT6R = 60 krad (Read); 25 krad (Write)
XP = Xray Pack
Base Product 4 Megabit (512 x 8bit) EEPROM
Nomenclature
1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows.
2) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the
device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. Writing to the device
before irradiation does not alter the device’s read mode TID level.
09.17.13 Rev 18
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20
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