79C2040B - EEPROM, 20 Mb (512kb x 40)

79C2040B
20 Megabit (512K x 40-Bit)
EEPROM MCM
FEATURES:
DESCRIPTION:
512k x 40-bit EEPROM MCM
Maxwell Technologies’ 79C2040B multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging
technology, the 79C2040B is the first radiation-hardened 20
megabit MCM EEPROM for space application. The 79C2040B
uses twenty 1 Megabit high speed CMOS die to yield a 20
megabit product. The 79C2040B is capable of in-system electrical byte and page programmability. It has a 128 word page
programming function to make the erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C2040B, hardware data protection is provided with
the RES pin, in addition to noise protection on the WE signal
and write inhibit on power on and off. Software data protection
is implemented using the JEDEC optional standard algorithm.
• RAD-PAK® radiation-hardened against natural
• space radiation
• Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
• Excellent Single event effects @ 25°C
- SELTH > 120 MeV cm2/mg (Device)
- SEUTH > 90 MeV cm2/mg(Memory Cells)
- SEU TH > 18 MeV cm2/mg (Write Mode)
- SETTH > 40 MeV cm2/mg (Read Mode)
• High endurance
- 10,000 cycles/byte (Page Programming Mode)
- 10 year data retention
• Page Write Mode: 128 Dword Page
• High Speed:
- 150 and 200 ns maximum access times
• Automatic programming
- 10 ms automatic Page/Dword write
• Low power dissipation
- 375 mW/MHz active current
- 3. 2 mW standby current
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies’ self-defined Class
K
09.15.15 Rev 4
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
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1
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Memory
Logic Diagram
79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
PINOUT DESCRIPTION
1, 11, 21, 30, 40, 50,
51, 61, 71, 80, 90,
100
VSS - Ground
2, 12, 22, 29, 39, 49,
52, 62, 72, 79, 89, 99
VCC - Positive Supply
60 - 53, 41 - 48, 10 3, 91 - 98, 88 - 81
D0 to D39
23 - 28, 31, 32, 78 73, 70 - 68
CS0\ - CS3\
Chip Enable
A0 to A16 Address Inputs
33
RES\ - Reset
34 - 38
WE\0 - WE\4
66 - 63
RBSY\0 - RBSY\3 Ready/Busy
09.15.15 Rev 4
Memory
13, 14, 15, 16
Data I/O
Write Enables
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
TABLE 1. 79C2040B ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Supply Voltage
VCC
-0.6
7.0
V
-0.51
Input Voltage
VIN
7.0
V
Package Weight
RSF
Operating Temperature Range
TOPR
-55
125
°C
Storage Temperature Range
TSTG
-65
150
°C
35
Grams
1. VIN min = -3.0V for pulse width <50ns.
TABLE 2. 79C2040B RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
MIN
MAX
UNIT
Supply Voltage
VCC
4.5
5.5
V
Input Voltage
VIL
VIH
VH
-0.31
2.2
VCC-0.5
0.8
VCC +0.3
VCC +1
V
V
V
TOPR
-55
125
°C
RES_PIN
Operating Temperature Range
Memory
SYMBOL
1. VIL min = -1.0V for pulse width < 50 ns
TABLE 3. 79C2040B DELTA LIMITS1
PARAMETER
VARIATION2
ICC1A
+/- 10 %
ICC1D
+/- 10 %
ICC2A
+/- 10 %
ILI - ADDR, CE, OE, WE
+/- 10 %
ILI - D0-D39
+/- 10 %
1. Parameters are measured and recorded per MIL-STD-883 for Class K devices
2. Specified value in Table 5
TABLE 4. 79C2040B CAPACITANCE
(TA = 25 °C, f = 1 MHz)
PARAMETER
SYMBOL
Input Capacitance : VIN = 0V1
09.15.15 Rev 4
MIN
MAX
UNIT
CIN OE
6
pF
CIN WE
6
CIN CE0-30
30
CIN A0-A16
6
CIN RES
120
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
TABLE 4. 79C2040B CAPACITANCE
(TA = 25 °C, f = 1 MHz)
PARAMETER
SYMBOL
Output Capacitance: VOUT = 0V1
MIN
COut RDY/BSY
CO ut D0-D39
--
MAX
UNIT
60
pF
48
1. Guaranteed by design.
TABLE 5. 79C2040B DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ±10%, TA = -55 TO +125°C)
TEST CONDITION
Input Leakage Current
A0-A16, WE, OE
VCC=5.5V, VIN = VCC & VIN=0V
Input Leakage Current
CE
Input Leakage Current
D0-D39
SYMBOL
SUBGROUPS
ILI
1, 2, 3
MAX
UNITS
11
µA
VCC=5.5V, VIN=0V & VIN=0V
10
µA
VCC=5.5V, VIN=VCC & VIN=0V
8
µA
Output LeakageCurrent1 (VCC = 5.5V, VOUT = 5.5V/0.4V)
Standby VCC Current
Operating
VCC Current1,2
ILO
1, 2, 3
--
8
µA
CE = ADDR=WE=OE =VCC
ICC1A
1, 2, 3
--
640
µA
CE =VIH, ADDR=WE=OE =0V
ICC1D
--
21
mA
OE = 0V ADDR=WE=VCC
IOUT = 0mA, CE Duty = 100%,
Cycle = 1 us at VCC = 5.5V
ICC2A
1, 2, 3
75
mA
OE =ADDR=WE=0V
IOUT = 0mA, CE Duty = 100%,
Cycle = 150 ns at VCC = 5.5V
ICC2D
1, 2, 3
250
mA
VIL
VIH
1, 2, 3
0.8
V
0.4
---
V
V
V
Input Voltage
Output
1. For RES IIL = 2000uA
2.2
VCC -0.5
VH
RES_PIN
Voltage3
MIN
Data Lines: VCCMin, IOL= 2.1mA
Data Lines: VCC Min, IOH = -400µA
All Outputs: VCCMin , IOH = -100uA
Memory
PARAMETER
1, 2, 3
VOL
VOH
-2.4
VCC - 0.3V
2. Only one CE active(Logic Low)
3. RBSY is an open drain output. Only VOL applies to this pin.
TABLE 6. 79C2040B AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
Address Access Time CE = OE = VIL, WE = VIH
-150
-200
SYMBOL
SUBGROUPS
tACC
9, 10, 11
09.15.15 Rev 4
MIN
MAX
---
150
200
UNIT
ns
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
TABLE 6. 79C2040B AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
SYMBOL
SUBGROUPS
Chip Enable Access Time OE = VIL, WE = VIH
-150
-200
tCE
9, 10, 11
Output Enable Access TIme CE = VIL, WE = VIH
-150
-200
tOE
9, 10, 11
Output Hold to Address Change CE = OE =VIL, WE = VIH
-150
-200
tOH
9, 10, 11
MIN
MAX
---
150
200
0
0
75
100
0
0
---
0
0
50
60
0
0
350
450
0
0
450
650
UNIT
ns
ns
ns
9, 10, 11
ns
tDF
ns
tDFR
RES to Output Delay CE = OE = VIL, WE = VIH3
-150
-200
tRR
9, 10, 11
Memory
Output Disable to High-Z 2
CE = VIL, WE = VIH
-150
-200
CE = OE = VIL, WE = VIH
-150
-200
ns
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and fixture); reference levels for measuring timing = 0.8 V/1.8 V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
TABLE 7. 79C2040B AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
SYMBOL
SUBGROUPS
Address Setup Time
-150
-200
tAS
9, 10, 11
Chip Enable to Write Setup Time (WE controlled)
-150
-200
tCS
9, 10, 11
Write Pulse Width
CE controlled
-150
-200
WE controlled
-150
-200
MIN 1
MAX
0
0
---
0
0
---
250
350
---
250
350
---
UNITS
ns
ns
9, 10, 11
tCW
tWP
09.15.15 Rev 4
ns
ns
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
TABLE 7. 79C2040B AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
SUBGROUPS
Address Hold Time
-150
-200
tAH
9, 10, 11
Data Setup Time
-150
-200
tDS
9, 10, 11
Data Hold Time
-150
-200
tDH
9, 10, 11
Chip Enable Hold Time (WE controlled)
-150
-200
tCH
9, 10, 11
Write Enable to Write Setup Time (CE controlled)
-150
-200
tWS
9, 10, 11
Write Enable Hold Time (CE controlled)
-150
-200
tWH
9, 10, 11
Output Enable to Write Setup Time
-150
-200
tOES
9, 10, 11
Output Enable Hold Time
-150
-200
tOEH
9, 10, 11
Write Cycle Time 2
-150
-200
tWC
9, 10, 11
Data Latch Time
-150
-200
tDL
9, 10, 11
Byte Load Window
-150
-200
tBL
9, 10, 11
Byte Load Cycle
-150
-200
tBLC
9, 10, 11
Time to Device Busy
-150
-200
tDB
9, 10, 11
Write Start Time 3
-150
-200
tDW
9, 10, 11
09.15.15 Rev 4
MIN 1
MAX
150
200
---
100
150
---
10
10
---
0
0
---
0
0
---
0
0
---
0
0
---
0
0
---
---
10
10
300
400
---
100
200
---
.55
.95
30
30
120
170
---
150
250
---
UNITS
ns
ns
ns
ns
ns
Memory
SYMBOL
ns
ns
ns
ms
ns
µs
µs
ns
ns
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
TABLE 7. 79C2040B AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(VCC = 5V ±10%, TA = -55 TO +125°C)
PARAMETER
SYMBOL
SUBGROUPS
RES to Write Setup Time
-150
-200
tRP
9, 10, 11
VCC to RES Setup Time4
-150
-200
tRES
9, 10, 11
MIN 1
MAX
100
200
---
1
3
---
UNITS
µs
µs
1. Use this device in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
TABLE 8. 79C2040B MODE SELECTION 1
CE 2
OE
WE
I/O
RES
RDY/BUSY
Read
VIL
VIL
VIH
DOUT
VH
High-Z
Standby
VIH
X
X
High-Z
X
High-Z
Write
VIL
VIH
VIL
DIN
VH
High-Z --> VOL
Deselect
VIL
VIH
VIH
High-Z
VH
High-Z
Write Inhibit
X
X
VIH
--
X
--
X
VIL
X
--
X
--
VH
VOL
VL
High-Z
Data Polling
VIL
VIL
VIH
Program Reset
X
X
1. Refer to the recommended DC operating conditions.
X
Data
Out3
High-Z
2. For CE0-3 only one CE can be used (active) at a time.
3. Bits 7, 15, 23, 31 and 39
09.15.15 Rev 4
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Memory
PARAMETER
79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
FIGURE 1. READ TIMING WAVEFORM
Memory
FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
09.15.15 Rev 4
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
Memory
FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
1) A7-A16 are Page Addresses and must be the same within a Page Write Operation.
09.15.15 Rev 4
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
1
Memory
1) A7-A16 are Page Addresses and must be the same within a Page Write Operation.
FIGURE 6. DATA POLLING TIMING WAVEFORM
I/O1
1) I/O 7, 15, 23, 31 AAND 39
09.15.15 Rev 4
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20 Megabit (512 x 40-Bit) EEPROM MCM
79C2040B
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)
Memory
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data integrity.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading
the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte
of data can be loaded within 30µs of the preceding falling edge of either WE or CE. When CE and WE are kept high
for 100µs after data input, the EEPROM enters the write mode automatically and the data input is written into the
EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
09.15.15 Rev 4
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state.
RES Signal
When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by
keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations.
Memory
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming
mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its
width is 20ns or less in programming mode. Be careful not to allow noise of a width more than 20ns on the control
pins.
20ns
09.15.15 Rev 4
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
2. Data Protection at VCC on/off
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during VCC on/off by using a CPU reset signal to RES pin.
3. RES Signal
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES
should be kept high for 10 ms after the last data is input
Memory
.
10ms
4. Software Data Protection Enable
The 79C2040B contains a software controlled write protection feature that allows the user to inhibit all write operations to the
device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent
writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the
EEPROM and allowing the write cycle period (tWC) of 10ms to elapse:
.
Software Data Protection Enable Sequence
Address
Data
5555
AAAA or 2AAA
AA AA AA AA AA
55 55 55 55 55
5555
A0 A0 A0 A0 A0
09.15.15 Rev 4
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
5. Writing to the Memory with Software Data Protection Enabled
To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This
sequence allows the write to occur while at the same time keeping the software protection enabled
Sequence for Writing Data with Software Protection Enabled.
Address
Data
5555
AAAA or 2AAA
AA AA AA AA AA
55 55 55 55 55
5555
A0 A0 A0 A0 A0
Normal Data Input
Write Address(s)
Memory
6. Disabling Software Protection
Software data protection mode can be disabled by inputting the following 6 bytes sequence. Once the software protection
sequence has been written, no data can be written to the memory until the write cycle (TWC) has elapsed.
Software Protection Disable Sequence
Address
Data
5555
AA AA AA AA AA
AAAA or 2AAA
55 55 55 55 55
5555
80 80 80 80 80
5555
AA AA AA AA AA
AAAA or 2AAA
55 55 55 55 55
5555
20 20 20 20 20
Devices are shipped in the “unprotected” state, meaning that the contents of the memory can be changed as
required by the user. After the software data protection is enabled, the device enters the Protect Mode
where no further write commands have any effect on the memory contents.
09.15.15 Rev 4
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
Memory
100 Pin Rad Pack and Rad-Tolerant Flat Pack
SYMBLOL
DIMENSIONS
MIN
NOM
MAX
A
0.381
0.400
0.419
b
0.006
0.008
0.010
c
0.005
0.006
0.007
D
1.351
1.366
1.381
e
0.025 BSC
E
0.887
0.897
0.907
L
0.390
0.400
0.410
Q
0.132
0.139
0.147
S
0.055
0.075
0.095
NOTE: ALL DIMENSIONS IN INCHES.
TOP AND BOTTOM OF THE PACKAGE ARE INTERNALLY TIED TO GROUND.
09.15.15 Rev 4
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20 Megabit (512 x 40-Bit) EEPROM MCM
79C2040B
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Memory
09.15.15 Rev 4
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79C2040B
20 Megabit (512 x 40-Bit) EEPROM MCM
Product Ordering Options
79C2040B
XX
F
X
-XX
Access Time
15 = 150 ns
20 = 200 ns
Screening Flow
Multi Chip Module (MCM)1
K = Maxwell Self-Defined Class K
H = Maxwell Self-Defined Class H
I = Industrial (Testing @-55C, +25C , +125C)
E = Engineering (Testing @ +25C)
Memory
Package
F = Flat Pack
Radiation Features2 RP = Rad-Pak® Package
RT = No Radiation Guarentee
Class E and I only
RT1 = 10 Krad (Read/Write)
RT2 = 25 Krad (Read/Wite)
RT4 = 40 Krad (Read/Write)
RT6 = 60 Krad (Read/Write)
RT4R = 40 Krad (Read); 25 Krad (Write)
RT6R = 60 Krad (Read), 25 Krad (Write)
Base Product
Nomenclature
20Megabyte (512K x 40-Bit) EEPROM
1) Products are manufacturered and screened to Maxwell Technologies’ self-defined Class H and Class K.
2) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation.
Writing to the device during irradiation will reduce the device’s TID tolerance to the specified write TID level.
Writing to the device before irradiation does not alter the device’s read mode TID level.
09.15.15 Rev 4
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