79LV0408 - EEPROM, 4 Mb (512kb x 8) Datasheet

79LV0408
Low Voltage 4 Megabit
(512k x 8-bit) EEPROM
CE1
CE2
CE3
CE4
RES
R/B
WE
OE
A0-16
128K x 8
128K x 8
128K x 8
I/O0-7
•
•
• Four 128k x 8-bit EEPROMs MCM
• RAD-PAK® radiation-hardened against natural
space radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single event effects @ 25°C
- SEL > 120 MeV cm2/mg (Device)
- SEU > 85 MeV cm2/mg(Memory Cells)
- SEU > 18 MeV cm2/mg (Write Mode)
- SET > 40 MeV cm2/mg (Read Mode)
• Package
- 40 Pin RAD-PAK® Flat Pack
- 40 Pin RAD-PAK® Rad Tolerant Flat Pack
• High speed:
-200 and 250 ns access times available
• Data Polling and Ready/Busy signal
• Software data protection
• Write protection by RES pin
• High endurance
- 10,000 erase/write (Page Mode),
- 10 year data retention
• Page write mode: 1 to 128 byte page
• Low power dissipation
- 88 mW/MHz active mode
- 440 µW standby mode
DESCRIPTION
Maxwell Technologies’ 79LV0408 multi-chip module (MCM) memory features a greater than 100
krad (Si) total dose tolerance, depending upon
space mission. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79LV0408 is the first radiationhardened 4 Megabit MCM EEPROM for space
applications. The 79LV0408 uses four 1 Megabit
high-speed CMOS die to yield a 4 Megabit product.
The 79LV0408 is capable of in-system electrical
Byte and Page programmability. It has a 128 bytes
Page Programming function to make its erase and
write operations faster. It also features Data Polling
and a Ready/Busy signal to indicate the completion
of erase and programming operations. In the
79LV0408, hardware data protection is provided
with the RES pin, in addition to noise protection on
the WE signal. Software data protection is implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in
the microcircuit package. It eliminates the need for
box shielding while providing the required radiation
shielding for a lifetime in orbit or space mission. In
a GEO orbit, the RAD-PAK® package provides
greater than 100 krad (Si) radiation dose tolerance.
This product is available with screening up to Maxwell Technologies self-defined Class K.
09.17.13 Rev 13
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
Logic Diagram
All data sheets are subject to change without notice
1
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Memory
• FEATURES
128K x 8
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 1. 79LV0408 PIN DESCRIPTION
PIN
SYMBOL
DESCRIPTION
16-9, 32-31,
28, 30, 8, 33,
7, 36, 6
A0 to A16
17-19, 22-26
I/O0 to I/O7
29
OE
2, 3, 39, 38
CE1-4
34
WE
Write Enable
1, 27, 40
VCC
Power Supply
4, 20, 21, 37
VSS
Ground
5
RDY/BUSY
35
RES
Address Input
Data Input/Output
Output Enable
Chip Enable 1 through 4
Ready/Busy
Reset
Memory
TABLE 2. 79LV0408 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
VCC
-0.6
7.0
V
Input Voltage
VIN
-0.51
7.0
V
Package Weight
RP
23
Grams
RT
10
Tjc
7.3
°C/W
Thermal Resistance ( RP Package)
Operating Temperature Range
TOPR
-55
125
°C
Storage Temperature Range
TSTG
-65
150
°C
1. VIN MIN = -3.0V FOR PULSE WIDTH <50NS.
TABLE 3. 79LV0408 RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
VCC
3.0
3.6
V
Input Voltage
VIL
VIH
VH
-0.31
2.2
VCC-0.5
0.8
VCC +0.3
VCC +1
V
V
V
TC
-55
125
°C
RES_PIN
Case Operating Temperature
1. VIL min = -1.0V for pulse width < 50 ns
09.17.13 Rev 13
All data sheets are subject to change without notice
2
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79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 4. 79LV0408 CAPACITANCE1
(TA = 25 °C, f = 1 MHz)
PARAMETER
SYMBOL
Input Capacitance: VIN = 0 V 1
WE
CE1-4
OE
A0-16
MIN
MAX
-----
24
6
24
24
UNIT
pf
CIN
Output Capacitance: VOUT = 0 V 1
COUT
48
pF
1. Guaranteed by design.
TABLE 5. DELTA PARAMETERS1
PARAMETER
CONDITION
+ 10% of value in Table 6
ICC2
+ 10% of value in Table 6
ICC3
+ 10% of value in Table 6
ICC4
+ 10% of value in Table 6
Memory
ICC1
1) Parameters are measured and recorded as Delts per MIL-STD-883
for Class K devices.
TABLE 6. 79LV0408 DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
PARAMETER
TEST CONDITION
Input Leakage Current
VCC = 3.6V, VIN = 3.6V1
Output Leakage
Current
IIL
1, 2, 3
MIN
MAX
UNITS
4
µA
--
21
OE, WE
--
8
A0-16
--
8
--
8
µA
ICC1
--
80
µA
CE = VIH
ICC2
--
4
mA
IOUT = 0mA, Duty = 100%,
Cycle = 1µs at VCC = 3.6V
ICC3
1, 2, 3
--
15
mA
IOUT = 0mA, Duty = 100%,
Cycle = 150ns at VCC = 3.6V
ICC4
1, 2, 3
--
50
VIL
1, 2, 3
--
0.8
VIH
2.2
--
VH
VCC -0.5
--
--
0.4
2.4
--
VCC = 3.6V, VOUT = 3.6V/0.4V
Input Voltage
RES_PIN
Output Voltage
SUBGROUPS
CE1-4
Standby VCC Current CE = VCC
Operating VCC
Current2
SYMBOL
ILO
1, 2, 3
IOL = 2.1 mA
VOL
IOH = -0.4 mA
VOH
09.17.13 Rev 13
1, 2, 3
V
V
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79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
1. ILI on RES = 100 uA max.
2. Only one CE\ Active.
TABLE 7. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS1
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
PARAMETER
SUBGROUPS
Address Access Time CE = OE = VIL, WE = VIH
-200
-250
tACC
9, 10, 11
Chip Enable Access Time OE = VIL, WE = VIH
-200
-250
tCE
Output Enable Access Time CE = VIL, WE = VIH
-200
-250
tOE
Output Hold to Address Change CE = OE = VIL, WE = VIH
-200
-250
tOH
Output Disable to High-Z2
CE = VIL, WE = VIH
-200
-250
tDF
CE = OE = VIL, WE = VIH
-200
-250
tDFR
RES to Output Delay CE = OE = VIL, WE = VIH 3
-200
-250
tRR
MIN
MAX
---
200
250
0
0
200
250
0
0
110
120
0
0-
---
0
0
60
60
0
0
300
350
---
520
550
UNIT
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
Memory
SYMBOL
ns
9, 10, 11
ns
9, 10, 11
9, 10, 11
ns
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
PARAMETER
Address Setup Time
-200
-250
SYMBOL
SUBGROUPS
tAS
9, 10, 11
09.17.13 Rev 13
MIN1
MAX
0
0
---
UNIT
ns
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©2013 Maxwell Technologies
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79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
PARAMETER
Chip Enable to Write Setup Time (WE Controlled)
-200
-250
Write Pulse WidthCE Controlled
-200
-250
WE Controlled
-200
-250
SYMBOL
SUBGROUPS
tCS
9, 10, 11
MIN1
MAX
0
0
---
200
250
---
200
250
---
125
150
---
100
100
---
10
10
---
0
0
---
0
0
---
0
0
---
0
0
---
0
0
---
---
15
15
700
750
---
100
100
---
ns
9, 10, 11
tCW
tWP
tAH
Data Setup Time
-200
-250
tDS
Data Hold Time
-200
-250
tDH
Chip Enable Hold Time (WE Controlled)
-200
-250
tCH
Write Enable to Write Setup Time (CE Controlled)
-200
-250
tWS
Write Enable Hold Time (CE Controlled)
-200
-250
tWH
Output Enable to Write Setup Time
-200
-250
tOES
Output Enable Hold Time
-200
-250
tOEH
Write Cycle Time2
-200
-250
tWC
Data Latch Time
-200
-250
tDL
Byte Load Window
-200
-250
tBL
09.17.13 Rev 13
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
Memory
Address Hold Time
-200
-250
UNIT
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
ms
9, 10, 11
ns
9, 10, 11
µs
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©2013 Maxwell Technologies
All rights reserved.
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
PARAMETER
SUBGROUPS
Byte Load Cycle
-200
-250
tBLC
9, 10, 11
Time to Device Busy
-200
-250
tDB
Write Start Time3
-200
-250
tDW
RES to Write Setup Time
-200
-250
tRP
VCC to RES Setup Time4
-200
-250
tRES
MIN1
MAX
1
1
---
150
150
---
150
150
---
100
100
---
1
1
---
UNIT
µs
9, 10, 11
ns
9, 10, 11
ns
9, 10, 11
µs
9, 10, 11
µs
1. Use this divice in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
TABLE 9. 79LV0408 MODE SELECTION 1, 2
PARAMETER
CE 3
OE
WE
I/O
RES
RDY/BUSY
Read
VIL
VIL
VIH
DOUT
VH
High-Z
Standby
VIH
X
X
High-Z
X
High-Z
Write
VIL
VIH
VIL
DIN
VH
High-Z --> VOL
Deselect
VIL
VIH
VIH
High-Z
VH
High-Z
Write Inhibit
X
X
VIH
--
X
--
X
VIL
X
--
X
--
Data Polling
VIL
VIL
VIH
Data Out (I/O7)
VH
VOL
Program
X
X
X
High-Z
VIL
High-Z
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
3. For CE1-4 only one CE can be used (“on”) at a time.
09.17.13 Rev 13
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Memory
SYMBOL
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 1. READ TIMING WAVEFORM
Memory
09.17.13 Rev 13
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All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
09.17.13 Rev 13
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Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
Memory
09.17.13 Rev 13
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Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
09.17.13 Rev 13
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79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
Memory
FIGURE 6. DATA POLLING TIMING WAVEFORM
09.17.13 Rev 13
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Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
Memory
Toggle Bit Waveform
EEPROM APPLICATION NOTES
This application note describes the programming procedures for each EEPROM module (four in
each MCM) and details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a
single write cycle, and allows the undefined data within 128 bytes to be written corresponding to
the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30
µs for the second byte. In the same manner each additional byte of data can be loaded within 30
µs. In case CE and WE are kept high for 100 µs after data input, the EEPROM enters erase and
write mode automatically and only the input data are written into the EEPROM.
09.17.13 Rev 13
All data sheets are subject to change without notice
12
©2013 Maxwell Technologies
All rights reserved.
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched
by the rising edge of WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set
to read mode during a write cycle, an inversion of the last byte of data to be loaded output is from
I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM.
The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the
first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance.
RES Signal
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions
described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation func-
09.17.13 Rev 13
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13
©2013 Maxwell Technologies
All rights reserved.
Memory
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be kept high during read and programming because it doesn’t provide a latch function.
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
tion that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a
width of more than 20ns on the control pins.
2. Data Protection at VCC on/off
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming
operation when RES becomes low, programming operation doesn’t finish correctly in case that RES
falls low during programming operation. RES should be kept high for 10 ms after the last data input.
10mS min
3. Software Data Protection
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write
data as follows. These bytes can switch the non-protection mode to the protection mode.
09.17.13 Rev 13
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Memory
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs,
may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming,
the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to
RES pin.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM
turns to the non-protection mode and can write data normally. However, when the data is input in the
canceling cycle, the data cannot be written.
Memory
09.17.13 Rev 13
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15
©2013 Maxwell Technologies
All rights reserved.
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
Memory
40 PIN RAD-PAK® PACKAGE DIMENSIONS
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.248
0.274
0.300
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
--
0.850
0.860
E
0.985
0.995
1.005
E1
--
--
1.025
E2
0.890
0.895
--
E3
0.000
0.050
--
e
0.040 BSC
L
0.380
0.390
0.400
Q
0.214
0.245
0.270
S1
0.005
0.038
--
N
40
Note: All dimensions in inches
Top and Bottom of the package are internally tied to ground.
09.17.13 Rev 13
All data sheets are subject to change without notice
16
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All rights reserved.
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
Memory
40 PIN X-RAY-PAKTM FLAT PACKAGE DIMENSIONS
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.248
0.274
0.300
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
0.840
0.850
0.860
E
0.985
0.995
1.005
E2
--
0.785
--
E3
--
0.105
--
e
0.040 BSC
L
0.340
0.350
0.400
Q
0.050
0.065
0.075
S1
--
0.035
--
N
40
NOTE: All Dimensions in Inches
Top and Bottom of package tied internally to ground.
09.17.13 Rev 13
All data sheets are subject to change without notice
17
©2013 Maxwell Technologies
All rights reserved.
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
Memory
40 PIN RAD-TOLERANT FLAT PACKAGE DIMENSIONS
DIMENSION
SYMBOL
MIN
NOM
MAX
A
0.202
0.224
0.246
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
--
0.850
0.860
E
0.985
0.995
1.005
E1
--
--
1.025
E2
0.890
0.895
--
E3
0.000
0.050
--
e
0.040 BSC
L
0.380
0.390
0.400
Q
0.190
0.212
0.236
S1
0.005
0.038
--
N
40
All dimensions are in inches.
Top and Bottom of package is internally tied to ground.
09.17.13 Rev 13
All data sheets are subject to change without notice
18
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell
Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate
information available to date. However, these specifications are subject to change without notice
and Maxwell Technologies assumes no responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support
devices or systems without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment
Memory
from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of
defective parts.
09.17.13 Rev 13
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19
©2013 Maxwell Technologies
All rights reserved.
79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
Product Ordering Options
Model Number
79LV0408
XX
F
X
Features
Option Details
-XX
Access Time
20 = 200 ns
25 = 250 ns
Screening Flow
Multi Chip Module (MCM)
K = Maxwell Self-Defined Class K
H = Maxwell Self-Defined Class H
I = Industrial(Testing at -55C, +25C, +125C)
E = Engineering (Tested at +25C)
Memory
Package
F = Flat Pack
Radiation Features1 RP = Rad-Pak® Package
RT = No Radiation Guarentee (Class E and I Only)
RT1 = 10 krad (Read/Write)
RT2R = 25 krad (Read); 15 krad (Write)
RT4R = 40 krad (Read); 15 krad (Write)
RT6R = 60 krad (Read); 15 krad (Write)
Base Product 1 Megabit (128K x 8) EEPROM
Nomenclature
1) The device will meet the specified read mode TID level, at the die level, if it not written to during irradiation. Writing to the
device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. Writing to the device
before irradiation does not alter the device’s read mode TID level.
09.17.13 Rev 13
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20
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