79LV0832 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects @ 25°C - SEL > 120 MeV cm2/mg (Device) - SEU > 85 MeV cm2/mg(Memory Cells) - SEU > 18 MeV cm2/mg (Write Mode) - SET > 40 MeV cm2/mg (Read Mode) • High endurance - 10,000 cycles/dword, 10 year data retention • Page Write Mode: 2 X 128 dword page • High Speed: - 200 and 250 ns maximum access times • Automatic programming - 15 ms automatic Page/dword write Maxwell Technologies’ 79LV0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79LV0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79LV0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79LV0832 is capable of in-system electrical dword and page programmability. It has a 128 x 32 byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79LV0832, hardware data protection is provided with the RES pin. Software data protection is implemented using the JEDEC standard algorithm. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK®‘ provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to MAxwell Technologies’ self-defined Class K. 12.02.15 Rev 15 (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com All data sheets are subject to change without notice 1 ©2015 Maxwell Technologies All rights reserved. Memory FEATURES: 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM Memory TABLE 1. 79LV0832 PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 84-77, 29-37 ADDR0 to ADDR16 48-55, 66-73, 96, 1-7, 18-25 I/O0 to I/O31 61 OE 41, 43 CE0-1 45 WE Write Enable 10, 17, 28, 40, 44, 58, 65, 76, 87, 93 3.3V Power Supply 8, 9, 11-16, 26, 27, 38, 42, 46, 56, 57, 59, 60, 62-64, 74, 75, 85, 86, 88-92, 94, 95 GND Ground 39 RDY/BUSY 47 RES Address Input Data Input/Output Output Enable Chip Enable 0 through 1 Ready/Busy Reset 12.02.15 Rev 15 All data sheets are subject to change without notice 2 ©2015 Maxwell Technologies All rights reserved 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 2. 79LV0832 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN TYP MAX UNIT Supply Voltage VCC -0.6 7.0 V Input Voltage VIN -0.51 7.0 V Package Weight RP 45 RT 38 Thermal Impedance (RP and RT Packages; XP TBD) FJC 3 Operating Temperature Range TOPR -55 125 °C Storage Temperature Range TSTG -65 150 °C Grams °C/W 1. VIN min = -3.0V for pulse width <50ns. TABLE 3. 79LV0832 RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN MAX UNIT VCC 3.0 3.6 V VIL VIH VH -0.31 2.2 VCC-0.5 0.8 VCC +0.3 VCC +1 V V V TOPR -55 125 °C Supply Voltage Input Voltage RES_PIN Operating Temperature Range Memory PARAMETER 1. VIL min = -1.0V for pulse width < 50 ns TABLE 4. DELTA LIMITS1 PARAMETER VARIATION2 ICC1A +/- 10 % ICC2A +/- 10 % ICC2C +/- 10 % ILI - ADDR, CE, OE, WE +/- 10 % ILo - D0 - D31 +/- 10 % 1. Delta limits are calculated from test data taken at preburn-in and post burn-in as defined in MIL-STD-883 2. Specified value in Table 6 12.02.15 Rev 15 All data sheets are subject to change without notice 3 ©2015 Maxwell Technologies All rights reserved 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 5. 79LV0832 CAPACITANCE (TA = 25 °C, f = 1 MHz) PARAMETER Input Capacitance: VIN = 0V1 Output Capacitance: VOUT = 0V1 SYMBOL MIN MAX UNIT CIN -- 6 pF CIN OE -- 6 CIN WE -- 6 CIN CE0-1 -- 6 CIN A0-A16 -- 6 CIN RES -- 48 COut RDY/BSY -- 6 CO ut D0-D31 -- 12 pF 1. Guaranteed by design. TABLE 6. 79LV0832 DC ELECTRICAL CHARACTERISTICS (VCC = 3.3V ±10%, TA = -55 TO +125°C) TEST CONDITION SYMBOL SUBGROUPS MIN MAX UNITS ILI 1, 2, 3 -- 42 µA VIN=VIH 7202 µA VIN=0V 7202 µA 4 µA Input Leakage Current1 VIN = VCC A0-A16, CE,WE, OE Input Leakage Current D0-D31 VIN=VCC ILI 1, 2, 3 ILO 1, 2, 3 -- 4 µA CE = ADDR=WE=OE =VCC ICC1A 1, 2, 3 -- 80 µA CE = ADDR=WE=OE =VIH ICC1B -- 15 mA CE = VIH; ADDR=WE=OE =0V ICC1C -- 15 mA OE = 0V; ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 3.6V ICC2A 1, 2, 3 24 mA OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 3.6V ICC2B 1, 2, 3 40 mA OE = 0V; ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 200 ns at VCC =3.6V ICC2C 1, 2, 3 60 mA OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 200 ns at VCC = 3.6V ICC2D 1, 2, 3 100 mA VIL VIH 1, 2, 3 0.8 V Output Leakage Current (VCC = 3.6V, VOUT = 3.6V/0.4V) Standby VCC Current1 Operating VCC Current1,3 Input Voltage VH RES_PIN 12.02.15 Rev 15 -- -- Memory PARAMETER 2.2 VCC -0.5 All data sheets are subject to change without notice 4 ©2015 Maxwell Technologies All rights reserved 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 6. 79LV0832 DC ELECTRICAL CHARACTERISTICS (VCC = 3.3V ±10%, TA = -55 TO +125°C) PARAMETER TEST CONDITION SYMBOL SUBGROUPS MIN MAX UNITS 1, 2, 3 -- 0.4 0.4 --- V V V V V VOL Data Lines: VCCMin, IOL = 2.1mA RDY/BSY_Line: VCC Min, IOL = 12mA VOL Data Lines: VCC Min, IOH = -400µA VOH RDY/BSY_Line: VCC Min, IOH = -12mA VOH All Outputs: VCCMin, IOH=-100uA 1. All Inputs are tied to Vcc with a 5.5KW resistor, except for RES which is 30KW. Output Voltage 2.4 2.4 VCC-0.3V 2. For RES ILI=800uA max. 3. Only one CE active (low) at a time TABLE 7. 79LV0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 3.3V ±10%, TA = -55 TO +125°C) PARAMETER SUBGROUPS Address Access Time CE = OE = VIL, WE = VIH -200 -250 tACC 9, 10, 11 Chip Enable Access Time OE = VIL, WE = VIH -200 -250 tCE 9, 10, 11 Output Enable Access TIme CE = VIL, WE = VIH -200 -250 tOE 9, 10, 11 Output Hold to Address Change CE = OE =VIL, WE = VIH -200 -250 tOH 9, 10, 11 Output Disable to High-Z 2 CE = VIL, WE = VIH -200 -250 CE = OE = VIL, WE = VIH -200 -250 RES to Output Delay CE = OE = VIL, WE = VIH3 -200 -250 MIN MAX --- 200 250 --- 200 250 0 0 110 120 0 0 --- 0 0 50 50 0 0 300 350 0 0 525 550 UNIT ns Memory SYMBOL ns ns ns 9, 10, 11 ns tDF ns tDFR TRR 9, 10, 11 ns 1. Test conditions: input pulse levels = 0.4V to 2.2V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing = 0.8 V/1.8 V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. 12.02.15 Rev 15 All data sheets are subject to change without notice 5 ©2015 Maxwell Technologies All rights reserved 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 8. 79LV0832 AC ELECTRICAL CHARACTERISTICS PAGE/DWORD ERASE AND PAGE/DWORD WRITE OPERATION (VCC = 3.3V ±10%, TA = -55 TO +125°C) PARAMETER SYMBOL SUBGROUPS Address Setup Time -200 -250 tAS 9, 10, 11 Chip Enable to Write Setup Time (WE controlled) -200 -250 tCS 9, 10, 11 MAX 0 0 --- 0 0 --- 200 250 --- 200 250 --- 200 250 --- 150 200 --- 10 10 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- --- 15 15 UNITS ns ns 9, 10, 11 ns tCW ns tWP Address Hold Time -200 -250 tAH 9, 10, 11 Data Setup Time -200 -250 tDS 9, 10, 11 Data Hold Time -200 -250 tDH 9, 10, 11 Chip Enable Hold Time (WE controlled) -200 -250 tCH 9, 10, 11 Write Enable to Write Setup Time (CE controlled) -200 -250 tWS 9, 10, 11 Write Enable Hold Time (CE controlled) -200 -250 tWH 9, 10, 11 Output Enable to Write Setup Time -200 -250 tOES 9, 10, 11 Output Enable Hold Time -200 -250 tOEH 9, 10, 11 Write Cycle Time 2 -200 -250 tWC 9, 10, 11 12.02.15 Rev 15 Memory Write Pulse Width CE controlled -200 -250 WE controlled -200 -250 MIN 1 ns ns ns ns ns ns ns ns ms All data sheets are subject to change without notice 6 ©2015 Maxwell Technologies All rights reserved 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 8. 79LV0832 AC ELECTRICAL CHARACTERISTICS PAGE/DWORD ERASE AND PAGE/DWORD WRITE OPERATION (VCC = 3.3V ±10%, TA = -55 TO +125°C) PARAMETER SUBGROUPS Data Latch Time -200 -250 tDL 9, 10, 11 Byte Load Window -200 -250 tBL 9, 10, 11 Byte Load Cycle -200 -250 tBLC 9, 10, 11 Time to Device Busy -200 -250 tDB 9, 10, 11 Write Start Time 3 -200 -250 tDW 9, 10, 11 RES to Write Setup Time4 -200 -250 tRP 9, 10, 11 VCC to RES Setup Time4 -200 -250 tRES 9, 10, 11 MIN 1 MAX 700 750 --- 100 200 --- 1 1 30 30 100 120 --- 250 250 --- 100 100 --- 1 1 --- UNITS ns µs µs ns Memory SYMBOL ns µs µs 1. Use this device in a longer cycle than this value. 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by desgin. 12.02.15 Rev 15 All data sheets are subject to change without notice 7 ©2015 Maxwell Technologies All rights reserved 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 9. 79LV0832 MODE SELECTION 1, 2 PARAMETER CE 3 OE WE I/O RES RDY/BUSY Read VIL VIL VIH DOUT VH VOH Standby VIH X X High-Z X VOH Write VIL VIH VIL DIN VH VOH --> VOL Deselect VIL VIH VIH High-Z VH VOH Write Inhibit X X VIH -- X -- X VIL X -- X -- Data Polling VIL VIL VIH Data Out (I/O7) VH VOL Program Reset X X X High-Z VIL VOH 1. X = Don’t care. 2. Refer to the recommended DC operating conditions. 3. For CE0-1 only one CE can be enabled (Low) at a time. Memory 12.02.15 Rev 15 All data sheets are subject to change without notice 8 ©2015 Maxwell Technologies All rights reserved Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 FIGURE 1. READ TIMING WAVEFORM High Memory FIGURE 2. DWORD WRITE TIMING WAVEFORM (1) (WE CONTROLLED) 12.02.15 Rev 15 All data sheets are subject to change without notice 9 ©2015 Maxwell Technologies All rights reserved Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 FIGURE 3. DWORD WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED) 12.02.15 Rev 15 All data sheets are subject to change without notice 10 ©2015 Maxwell Technologies All rights reserved Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)1,2 Memory 1) A7-A16 ARE PAGE ADDRESSES AND MUST BE THE SAME WITHIN A PAGE WRITE OPERATION 2) REFER TO TABLE 7 AND 8 FOR TIMING CHARACTERISTICS FIGURE 6. DATA POLLING TIMING WAVEFORM1 I/O7, 15, 23, 31 1) REFER TO TABLE 7 AND 8 FOR TIMING CHARACTORISTICS 12.02.15 Rev 15 All data sheets are subject to change without notice 11 ©2015 Maxwell Technologies All rights reserved Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)1 1)REPEAT THE DATA PATTERN IN EACH OF THE FOUR BYTES. Memory FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)1 1) REPEAT THE DATA PATTERN IN EACH OF THE FOUR BYTES. EEPROM APPLICATION NOTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data integrity. Automatic Page Write Page-mode write feature allows 1 to 128 dwords of data to be written into the EEPROM in a single write cycle. Loading the first dword of data, the data load window opens 30µs for the second dword. In the same manner each additional dword of data can be loaded within 30µs of the preceding falling edge of either WE or CE. When CE and WE are kept 12.02.15 Rev 15 All data sheets are subject to change without notice 12 ©2015 Maxwell Technologies All rights reserved Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 high for 100µs after data input, the EEPROM enters the write mode automatically and the data input is written into the EEPROM. WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last dword of data to be loaded outputs from I/O 7, 15, 23, 31 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( VOH). RES Signal Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection at VCC on/off When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. 12.02.15 Rev 15 All data sheets are subject to change without notice 13 ©2015 Maxwell Technologies All rights reserved Memory When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations. Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. Memory 2. RES Signal RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data is input 12.02.15 Rev 15 All data sheets are subject to change without notice 14 ©2015 Maxwell Technologies All rights reserved 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM . 15mS 3. Software Data Protection Enable . Software Data Protection Enable Sequence Address Data 5555 AA AA AA AA AAAA or 2AAA 55 55 55 55 5555 A0 A0 A0 A0 4. Writing to the Memory with Software Data Protection Enabled To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This sequence allows the write to occur while at the same time keeping the software protection enabled Sequence for Writing Data with Software Protection Enabled. Address Data 5555 AA AA AA AA AAAA or 2AAA 55 55 55 55 5555 A0 A0 A0 A0 Write Address(s) Normal Data Input 12.02.15 Rev 15 All data sheets are subject to change without notice 15 ©2015 Maxwell Technologies All rights reserved Memory The 79LV0832 contains a software controlled write protection feature that allows the user to inhibit all write operations to the device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the EEPROM and allowing the write cycle period (tWC) of 10ms to elapse: 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 5. Disabling Software Protection Software data protection mode can be disabled by inputting the following data sequence. Once the software protection sequence has been written, no data can be written to the memory until the write cycle (TWC) has elapsed. Software Protection Disable Sequence Address Data 5555 AA AA AA AA AAAA or 2AAA 55 55 55 55 5555 80 80 80 80 5555 AA AA AA AA AAAA or 2AAA 55 55 55 55 5555 20 20 20 20 12.02.15 Rev 15 All data sheets are subject to change without notice 16 ©2015 Maxwell Technologies All rights reserved Memory Devices are shipped in the “unprotected” state, meaning that the contents of the memory can be changed as required by the user. After the software data protection is enabled, the device enters the Protect Mode where no further write commands have any effect on the memory contents. Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 Memory 96-PIN RAD-PAK® QUAD FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A 0.184 0.200 0.216 b 0.010 0.012 0.013 c -- 0.009 0.012 D 1.408 1.420 1.432 D1 1.162 e 0.050 S1 0.129 L -- 2.528 2.543 L1 2.485 2.500 2.505 L2 A1 1.700 0.152 0.165 N 0.178 96 Note: All dimensions in inches Top and Bottom of the package are internally connected to ground. 12.02.15 Rev 15 All data sheets are subject to change without notice 17 ©2015 Maxwell Technologies All rights reserved Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 Memory 96 PIN RAD-TOLERANT QUAD FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A 0.180 0.195 0.210 b 0.010 0.012 0.014 c -- 0.009 0.012 D 1.408 1.420 1.432 D1 1.162 e 0.050 S1 0.129 F1 1.175 1.180 1.185 L 2.485 2.500 2.505 L2 A1 1.700 0.148 0.160 N 0.0172 96 Note: All dimensions in inches Top and Bottom of the package are internally connected to ground. 12.02.15 Rev 15 All data sheets are subject to change without notice 18 ©2015 Maxwell Technologies All rights reserved Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM 79LV0832 Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 12.02.15 Rev 15 All data sheets are subject to change without notice 19 ©2015 Maxwell Technologies All rights reserved 79LV0832 Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM Product Ordering Options Model Number 79LV0832 XX Q Feature X Option Details -XX Access Time 20 = 200 ns 25 = 250 ns Screening Flow Multi Chip Module (MCM)1 K = Maxwell Self-Defined Class K H = Maxwell Self-Defined Class H I = Industrial (Testing @-55C, +25C , +125C) E = Engineering (Testing @ +25C) Memory Package Q = Quad Flat Pack Radiation Features2 RP = Rad-Pak® Package RT = No Radiation Guarentee Class E and I only RT1 = 10 krad (Read/Write) RT2 = 25 krad (Read/Wite) RT4 = 40 krad (Read/Write) RT6 = 60 krad (Read/Write) RT4R = 40 krad (Read); 25 krad (Write) RT6R = 60 krad (Read), 25 krad (Write) Base Product Nomenclature 8 Megabyte (256K x 32-Bit) EEPROM 1) Products are manufacturered and screened to Maxwell Technologies’ self-defined Class H and Class K. 2) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. 12.02.15 Rev 15 All data sheets are subject to change without notice 20 ©2015 Maxwell Technologies All rights reserved