HSN-500 - Designed In Rad-Hard

HSN-500
Nuclear Event Detector
VB
8
9
Threshold
Adjust
VH
VL
14
1
10 kΩ
2
Detector
(Pin Diode)
BIT 6
Amplifier
NED
Pulse Timer
LED
7
GND
5
C
4
RC
Logic Diagram
DESCRIPTION:
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•
•
•
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•
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•
•
Maxwell Technologies’ HSN-500 radiation-hardened Hybrid
Nuclear Event Detector (NED) senses ionizing radiation pulses
generated by a nuclear event, such as the detonation of a nuclear
weapon, and rapidly switches its output from the normal high
state to a low state with a propagation delay time of less than 20
ns. The active low Nuclear Event Detection signal (NED) is used
to initiate a wide variety of circumvention functions, thus preventing upset and burnout of electronic components. The NED output
is also used to initiate both hardware and software recovery. This
high-speed, 14-pin hybrid detector is used in electronic systems
as a general-purpose circumvention device to protect memory,
stop data processing, and drive power supply switches as well as
signal clamps.
Detects ionizing radiation pulses
Tested/certified detection threshold level
Adjustable circumvention period
100% testable with built-in test
Detection threshold adjustability
Single +5V operation
Designed-in radiation hardness
Compliant to MIL-PRF-38534 Class H1
Flat pack (F) or DIP (L) packages
RADIATION HARDNESS
CHARACTERISTICS
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•
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Dose Rate (operate-through): 1 x 1012 rad(Si)/sec
Total Dose: 1 x 106 rad(Si)
Neutron Fluence: 5 x 1013 n/cm2
Approximate Detection Range: 2 x 105 - 2 x 107 rad(Si)/sec
Maxwell Technologies Specified, Controlled, and Tested
The HSN-500 is designed to operate through three critical environments: ionizing dose rate [1012 rad(Si)/s], gamma total dose
[106 rad(Si)], and neutron fluence [5 x 1013 n/cm2]. In addition, the
device is designed to function throughout the transient neutron
pulse. The hybrid’s discrete design ensures a controlled response
in these radiation environments as well as immunity to latchup.
The detection level and functionality of a sample of each HSN500 production lot are tested in an ionizing dose rate environment. A certificate is provided reporting the test results for the
production lot.
The detection threshold of the HSN-500 is adjustable within the
range of 2 x 105 rad(Si)/s to 2 x 107 rad(Si)/s. This detection level
can be preset by Maxwell or adjusted by the user. Less than a
30% variation in detection threshold can be expected over the
entire operating temperature range.
1.
Manufactured for Maxwell Technologies by Teledyne Micoelectronic
Technologies to MIL-PRF-38534, Class H, no RHA
01.7.05 Rev 3
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice
1
©2005 Maxwell Technologies
All rights reserved.
Memory
FEATURES:
HSN-500
Nuclear Event Detector
TABLE 1. PIN DESCRIPTION
PIN NUMBER PIN FUNCTION
Load Voltage, VL
2
Nuclear Event Detector, NED
3
No Connection
4
External Capacitor
5
External Capacitor
6
Built In Test, BIT
7
Package Ground and Case
8
PIN Diode Bias, VB
9
Threshold Adjust
10
No Connection
11
No Connection
12
No Connection
13
No Connection
14
Hardened Supply Voltage, VH
Memory
1
TABLE 2. ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
< TA < 125° C
MIN
MAX
UNIT
GROUP A
SUBGROUP
4.5
5.5
V
1,2,3
-30
120
mA
1,2,3
----
20
V
1,2,3
---
100
2.25
µA
mA
-55° C
Hardened Supply Voltage
VH
Hardened Supply Current
- Standby 1
- Operational 2
IH
Load Voltage
VL
Load Current
- Standby 1
- Operational 2
IL
VH = 5.5V
VL = 20V
1,2,3
PIN Diode Bias Voltage - Standby 1
VB
4.5
20
V
1,2,3
1
IB
--
100
µA
1,2,3
VIL = 0.5V
Pin 9 Open, VIH = 4.0V
4.0
---10
5.5
25
0.5
10
--
V
mA
V
µA
µs
7,8
1,2,3
7,8
1,2,3
9,10,11
VL = 20V, IOH = -100 µ A
IOL = 10 mA
IOL = 100 mA
18.5
---
-0.6
1.0
V
1,2,3
1,2,3
--
20
ns
PIN Diode Bias Current - Standby
Built-In-Test (BIT) 3,4
NED
Radiation Propagation Delay Time 5
VIH
IIH
VIL
IIL
tPW
VOH
VOL
VIH = 4.0V
tD
01.07.05 Rev 3
All data sheets are subject to change without notice
2
©2005 Maxwell Technologies
All rights reserved.
HSN-500
Nuclear Event Detector
Table 2. Notes
1. Standby mode is the normal state of the device, defined as having the NED output (pin 2) in the “high” state.
2. Operational mode is in effect during the timeout period of the NED signal, characterized by having the NED output in the “low”
state, causing the greatest current draw of the device.
3. BIT electrical characteristics are not guaranteed over the radiation range.
4. BIT may not meet specification when only a resistor is used to adjust the detection level. To use BIT in this situation, it is
advised that a series resistor/capacitor combination is used.
5. Guaranteed but not tested over temperature. Time delay, tD, is measured at 50% points from the rising edge of the radiation
pulse to the falling edge of the NED output at approximately 10 times the detection level.
0.600
0.015 ± 0.003
0.100
TYP
0.145 MAX
TOP VIEW
0.070 ± 0.002
0.500
MIN
14 13 12 11 10
9
0.100 TYP
8
0.495
1
2
3
4
5
6
Memory
0.795
0.600
14 13 12 11 10
9
8
1
6
7
2
3
4
5
0.300
0.495
7
0.145 MAX
0.795
0.200
0.010 ± 0.002
0.016
DIA
0.020
Flatpack Hybrid Package
HSN-500F
DIP Hybrid Package
HSN-500L
All tolerances are ± 0.005 unless specified
MECHANICAL DIMENSIONS
Note: All dimensions in inches.
01.07.05 Rev 3
All data sheets are subject to change without notice
3
©2005 Maxwell Technologies
All rights reserved.
HSN-500
Nuclear Event Detector
Important Notice:
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Product Ordering Options
HSN-500
X
Feature
Option Details
Package
L = Dual In-line Package (DIP)
F = Flat Pack
Base Product
Nomenclature
Nuclear Event Detector
01.07.05 Rev 3
Memory
Model Number
All data sheets are subject to change without notice
4
©2005 Maxwell Technologies
All rights reserved.