0510GN-25-CP 25 Watts • 50 Volts • Pulsed & CW 50MHz-1GHz Broadband GaN Amplifier Ceramic SMT Package GENERAL DESCRIPTION The 0510GN-25-CP is a COMMON SOURCE, class-AB, GaN on SiC HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW RF power applications. The transistor is housed in a Ceramic SMT package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness. PACKAGE OUTLINE Ceramic SMT 160X200 MIL FEATURES: Wide-band 50MHz-1GHz general purpose driver applications Single lumped-element Broadband application circuit Ideal for Pulsed Radar, Avionics, ISM, and CW Communication Commercial & Military Applications 25 W Pulsed/CW Psat, 16 dB Power Gain and 50 % Drain Efficiency Low-cost Ceramic SMT package with excellent RF & Thermal performance, reliability & ruggedness 50V Bias Operation with high breakdown voltage ABSOLUTE MAXIMUM RATINGS Maximum CW Power Dissipation Device Dissipation @ 25C 25 W Maximum Voltage and Current Drain-Source Voltage (VDSS) 125 V Gate-Source Voltage (VGS) -8 to +0 V Supply Current ( IDD ) 1400 mA Maximum Temperatures Storage Temperature (TSTG) -55 to +150 C Operating Junction Temperature +200 C TYPICAL CW BROADBAND PERFORMANCE SUMMARY 1 @ 25C Parameter Units 50 MHz 300 MHz 500 MHz 700 MHz 900 MHz 1 GHz Output Power Psat W 33 36 31 27 29 27 Power Gain dB 16 16.5 16 15.5 15.7 15.5 D Drain Efficiency % 85 75 61 50 52 52 1 Bias Condition: Vdd=+50V, Idq= 120 mA (Vgs= -2.0 ~ -4.5V typical), Pin = 29 dBm RF performance measured on the recommended broadband evaluation circuit board. For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 0510GN-25-CP 25 Watts • 50 Volts • Pulsed & CW 50MHz-1GHz Broadband GaN Amplifier Ceramic SMT Package DC FUNCTIONAL CHARACTERISTICS @ 25C Symbol Characteristics Test Conditions Min Typ Max Units ID(Off) Drain leakage current VGS = -8V, VDD = 50V 2 mA IG(Off) Gate leakage current VGS = -8V, VDD = 0V 0.4 mA BVDSS Drain-Source breakdown voltage VGS =-8V, IDD = 4 mA 125 VGS(TH) Gate Threshold Voltage VDS =50V, IDD = 4 mA -4.8 -3.4 -2.5 V Min Typ Max Units V ELECTRICAL CHARACTERISTICS1 @ 25C Symbol Test Conditions1 Characteristics Pout Output Power Pin=0.8W Freq= 50 MHz -1000 MHz, CW 28 W Gp Power Gain Pin=0.8W Freq= 500 MHz, CW 16 dB D Drain Efficiency Pin=0.8W Freq= 500 MHz, CW 61 % Pout Output Power Pin=0.8W Freq= 1000 MHz, Pulsed 2 31 W Gp Power Gain Pin=0.8W Freq= 1000 MHz, Pulsed 2 16 dB D Drain Efficiency Pin=0.8W Freq= 1000 MHz, Pulsed 2 54 % Dr Droop Pin=0.8W Freq= 1000 MHz, Pulsed 2 0.1 dB VSWR-T Load Mismatch Tolerance Pin=0.8W Freq=1000 MHz Өjc Thermal Resistance including PCB, Tbase = 85 °C Pulse Width=1 mS Duty=10% 1.7 CW 4.2 5:1 1 Bias Condition: Vdd=+50V, Idq= 120 mA (Vgs= -2.0 ~ -4.5V typical), CW Bias Condition: Vdd=+50V, Idq= 80 mA (Vgs= -2.0 ~ -4.5V typical), PW = 1mS, DC = 10% RF performance measured on the recommended broadband evaluation board. 2 For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information °C/W 0510GN-25-CP 25 Watts • 50 Volts • Pulsed & CW 50MHz-1GHz Broadband GaN Amplifier Ceramic SMT Package CW PERFORMANCE PLOTS @ VDD=50 V, IDQ = 120mA, T = 25C For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 0510GN-25-CP 25 Watts • 50 Volts • Pulsed & CW 50MHz-1GHz Broadband GaN Amplifier Ceramic SMT Package For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 0510GN-25-CP 25 Watts • 50 Volts • Pulsed & CW 50MHz-1GHz Broadband GaN Amplifier Ceramic SMT Package EVALUATION BOARD LAYOUT 0510 CP EB1 ASSEMBLY DIAGRAM AND BOM FOR BROADBAND 50 MHz to 1 GHz Board Material: Rogers RO4003C, 12 Mil Thickness, Er = 3.38, 1 OZ Cu 8 Mil Dia Vias below package, Qty: 85, Solid Plated Cu Filled. Board Size: 1.5 x 1.3 inches Item C2 C3 C6 C9 C13 C1, C11, C7 C5,C14 C8,C15 R1 R5,R6,R7 R2 R3 R4 L1 L2 L3 L4 J3 Q1 Note: Description 50 MHz - 1 GHz 0603, 12 pF, ±5%, 250V, ATC 600S 0603, 3.3 pF, ±5%, 250V, ATC 600S 0603, 1 pF, ±5%, 250V, ATC 600S 0603, 1.8 pF, ±0.25pF, 250V, ATC 600S 0603, 470 pF, ±5%, 100V, AVX, X7R 0603, 1000 pF ±10%, 100V, AVX, X7R 0603, 10000 pF, ±10%, 100V, AVX, X7R 1206, 4.7 uF, ±10%, 100V, AVX, X7S 0603 6.2 Ω 0603 0.0 Ω JUMPER 0603 3 Ω 0603 24 Ω NDP-0505WA 1K ohm, 5%, IMS 0402HP, 2.7 nH , 5% Coilcraft 0402PA, 5.8 nH , 5% Coilcraft 4310LC-132KEB, 1.3uH, Coilcraft 0603HP, 6.0 nH , 5% Coilcraft TSM-105-01-S-SV-A, SAMTEC 0510GN-25-CP Board Material: Rogers RO4003C, 12 Mil Thickness, Er = 3.38, 1 OZ Cu For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 0510GN-25-CP 25 Watts • 50 Volts • Pulsed & CW 50MHz-1GHz Broadband GaN Amplifier Ceramic SMT Package CERAMIC SMT PACKAGE 160X200 MIL OUTLINE & DIMENSIONS All Dimensions are in inches PIN FUNCTION 1 Gate (RF/DC Input ) 2 Backside Exposed Pad Drain (RF Output/DC Input) Source (RF/ DC GND & Thermal Pad) Notes: 1. Backside exposed pad must be connected to Solid Plated Cu filled vias for optimum RF & Thermal performance. See recommended evaluation board layout For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 0510GN-25-CP 25 Watts • 50 Volts • Pulsed & CW 50MHz-1GHz Broadband GaN Amplifier Ceramic SMT Package The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp. Revision History Revision Date 1.0 5-13-15 2.0 6-21-15 Affected Section(s) Page 1 Description Initial Preliminary Release Package photo updated For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information