0510GN-25-CP

0510GN-25-CP
25 Watts • 50 Volts • Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
GENERAL DESCRIPTION
The 0510GN-25-CP is a COMMON SOURCE, class-AB, GaN on SiC
HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW
RF power applications. The transistor is housed in a Ceramic SMT
package with high-thermal conductivity to provide superior electrical and
thermal performance with excellent reliability & ruggedness.
PACKAGE OUTLINE
Ceramic SMT 160X200 MIL
FEATURES:

Wide-band 50MHz-1GHz general purpose driver applications

Single lumped-element Broadband application circuit

Ideal for Pulsed Radar, Avionics, ISM, and CW Communication

Commercial & Military Applications

25 W Pulsed/CW Psat, 16 dB Power Gain and 50 % Drain Efficiency

Low-cost Ceramic SMT package with excellent RF & Thermal
performance, reliability & ruggedness

50V Bias Operation with high breakdown voltage
ABSOLUTE MAXIMUM RATINGS
Maximum CW Power Dissipation
Device Dissipation @ 25C
25 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
125 V
Gate-Source Voltage (VGS)
-8 to +0 V
Supply Current ( IDD )
1400 mA
Maximum Temperatures
Storage Temperature (TSTG)
-55 to +150 C
Operating Junction Temperature +200 C
TYPICAL CW BROADBAND PERFORMANCE SUMMARY 1 @ 25C
Parameter
Units
50 MHz
300 MHz
500 MHz
700 MHz
900 MHz
1 GHz
Output Power Psat
W
33
36
31
27
29
27
Power Gain
dB
16
16.5
16
15.5
15.7
15.5
D Drain Efficiency
%
85
75
61
50
52
52
1
Bias Condition: Vdd=+50V, Idq= 120 mA (Vgs= -2.0 ~ -4.5V typical), Pin = 29 dBm
RF performance measured on the recommended broadband evaluation circuit board.
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
0510GN-25-CP
25 Watts • 50 Volts • Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
DC FUNCTIONAL CHARACTERISTICS @ 25C
Symbol
Characteristics
Test Conditions
Min
Typ
Max
Units
ID(Off)
Drain leakage current
VGS = -8V, VDD = 50V
2
mA
IG(Off)
Gate leakage current
VGS = -8V, VDD = 0V
0.4
mA
BVDSS
Drain-Source breakdown voltage
VGS =-8V, IDD = 4 mA
125
VGS(TH)
Gate Threshold Voltage
VDS =50V, IDD = 4 mA
-4.8
-3.4
-2.5
V
Min
Typ
Max
Units
V
ELECTRICAL CHARACTERISTICS1 @ 25C
Symbol
Test Conditions1
Characteristics
Pout
Output Power
Pin=0.8W Freq= 50 MHz -1000 MHz, CW
28
W
Gp
Power Gain
Pin=0.8W Freq= 500 MHz, CW
16
dB
D
Drain Efficiency
Pin=0.8W Freq= 500 MHz, CW
61
%
Pout
Output Power
Pin=0.8W Freq= 1000 MHz, Pulsed 2
31
W
Gp
Power Gain
Pin=0.8W Freq= 1000 MHz, Pulsed 2
16
dB
D
Drain Efficiency
Pin=0.8W Freq= 1000 MHz, Pulsed 2
54
%
Dr
Droop
Pin=0.8W Freq= 1000 MHz, Pulsed 2
0.1
dB
VSWR-T
Load Mismatch Tolerance
Pin=0.8W Freq=1000 MHz
Өjc
Thermal Resistance
including PCB, Tbase = 85 °C
Pulse Width=1 mS Duty=10%
1.7
CW
4.2
5:1
1
Bias Condition: Vdd=+50V, Idq= 120 mA (Vgs= -2.0 ~ -4.5V typical), CW
Bias Condition: Vdd=+50V, Idq= 80 mA (Vgs= -2.0 ~ -4.5V typical), PW = 1mS, DC = 10%
RF performance measured on the recommended broadband evaluation board.
2
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
°C/W
0510GN-25-CP
25 Watts • 50 Volts • Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
CW PERFORMANCE PLOTS @ VDD=50 V, IDQ = 120mA, T = 25C
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
0510GN-25-CP
25 Watts • 50 Volts • Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
0510GN-25-CP
25 Watts • 50 Volts • Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
EVALUATION BOARD LAYOUT 0510 CP EB1
ASSEMBLY DIAGRAM AND BOM FOR BROADBAND 50 MHz to 1 GHz
Board Material: Rogers RO4003C, 12 Mil Thickness, Er = 3.38, 1 OZ Cu
8 Mil Dia Vias below package, Qty: 85, Solid Plated Cu Filled. Board Size: 1.5 x 1.3 inches
Item
C2
C3
C6
C9
C13
C1, C11, C7
C5,C14
C8,C15
R1
R5,R6,R7
R2
R3
R4
L1
L2
L3
L4
J3
Q1
Note:
Description
50 MHz - 1 GHz
0603, 12 pF, ±5%, 250V, ATC 600S
0603, 3.3 pF, ±5%, 250V, ATC 600S
0603, 1 pF, ±5%, 250V, ATC 600S
0603, 1.8 pF, ±0.25pF, 250V, ATC 600S
0603, 470 pF, ±5%, 100V, AVX, X7R
0603, 1000 pF ±10%, 100V, AVX, X7R
0603, 10000 pF, ±10%, 100V, AVX, X7R
1206, 4.7 uF, ±10%, 100V, AVX, X7S
0603 6.2 Ω
0603 0.0 Ω JUMPER
0603 3 Ω
0603 24 Ω
NDP-0505WA 1K ohm, 5%, IMS
0402HP, 2.7 nH , 5% Coilcraft
0402PA, 5.8 nH , 5% Coilcraft
4310LC-132KEB, 1.3uH, Coilcraft
0603HP, 6.0 nH , 5% Coilcraft
TSM-105-01-S-SV-A, SAMTEC
0510GN-25-CP
Board Material: Rogers RO4003C, 12 Mil Thickness, Er = 3.38, 1 OZ Cu
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
0510GN-25-CP
25 Watts • 50 Volts • Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
CERAMIC SMT PACKAGE 160X200 MIL OUTLINE & DIMENSIONS
All Dimensions are in inches
PIN
FUNCTION
1
Gate (RF/DC Input )
2
Backside
Exposed Pad
Drain (RF Output/DC Input)
Source (RF/ DC GND & Thermal Pad)
Notes:
1. Backside exposed pad must be connected to Solid Plated Cu filled vias for optimum RF &
Thermal performance. See recommended evaluation board layout
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
0510GN-25-CP
25 Watts • 50 Volts • Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied,
published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of
Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such
Agreement will also apply . This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted
to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of
Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical
equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty,
relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and
conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp.
Revision History
Revision
Date
1.0
5-13-15
2.0
6-21-15
Affected Section(s)
Page 1
Description
Initial Preliminary Release
Package photo updated
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
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