1214GN-120E-EL-EP

1214GN-120E/EL/EP Datasheet
120W L-Band Radar GaN Power Transistor and
Pallet Amplifier
120W L-Band Radar GaN Power Transistor and Pallet Amplifier
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2
120W L-Band Radar GaN Power Transistor and Pallet Amplifier
Revision History
1.1
Revision 1.0
Revision 1.0 was the first publication of this document.
3
120W L-Band Radar GaN Power Transistor and Pallet Amplifier
Contents
Revision History.............................................................................................................................. 3
1.1
Revision 1.0 ................................................................................................................................................ 3
2 Product Overview .................................................................................................................... 7
2.1
Applications ............................................................................................................................................... 7
2.1.1
Key Features ................................................................................................................................ 8
3 Electrical Specifications ............................................................................................................ 9
3.1
Absolute Maximum Ratings ....................................................................................................................... 9
3.2
Electrical Characteristics at 25 °C ............................................................................................................... 9
3.3
Functional Characteristics at 25 °C ............................................................................................................ 9
3.4
Typical Broadband Performance Data (300 µS, 10% Pulsing) .................................................................. 10
3.5
Critical Performance at PIN = 4 W (34 dBm) ............................................................................................. 11
4 Transistor Impedance Information......................................................................................... 12
5 Transistor Test Information .................................................................................................... 13
6 Package Outline and Pin Information .................................................................................... 14
6.1
55-QQ Common Source Package Dimensions and Pin Information......................................................... 14
6.2
55-QQP Common Source Package Dimensions and Pin Information ...................................................... 15
6.3
Overall Pallet Dimensions ........................................................................................................................ 16
4
120W L-Band Radar GaN Power Transistor and Pallet Amplifier
List of Figures
Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")................................................................................ 7
Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230").............................................................................. 7
Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") ................................................................................. 7
Figure 4 Typical Broadband Performance Data Graphs ............................................................................................. 10
Figure 5 Impedance Definition................................................................................................................................... 12
Figure 6 55-QQ Package Dimensions and Pin Information ........................................................................................ 14
Figure 7 55-QQP Package Dimensions and Pin Information ...................................................................................... 15
Figure 8 Pallet Package Dimensions .......................................................................................................................... 16
5
120W L-Band Radar GaN Power Transistor and Pallet Amplifier
List of Tables
Table 1 Absolute Maximum Ratings ............................................................................................................................ 9
Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 9
Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 9
Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) ....................................................................... 10
Table 5 Critical Performance at PIN = 4 W (34 dBm) .................................................................................................. 11
Table 6 55-QQ Package Dimensions .......................................................................................................................... 14
Table 7 55-QQP Package Dimensions ........................................................................................................................ 15
6
120W L-Band Radar GaN Power Transistor and Pallet Amplifier
2
Product Overview
The 1214GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT
transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power
under 300 μS pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 MHz band.
The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is
available in two package types, as well as mounted on a compact footprint 50Ω IN/OUT pallet, and is
specifically designed for L-band pulsed primary radar applications. It utilizes gold metallization and
eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification:
EAR-99.
Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")
Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230")
Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150")
2.1
Applications
The 1214GN-120E and 1214GN-120EL transistors and the 1214GN-120EP pallet are specifically
designed for L-band pulsed primary radar applications.
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120W L-Band Radar GaN Power Transistor and Pallet Amplifier
2.1.1
Key Features
The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor
products:
•
1200–1400 MHz, 120 W pulsed output power, 300 µS 10% pulsing
•
Common source, Class AB, 50 V bias voltage
•
High efficiency: >60% typical across the frequency band
•
Extremely compact size
•
High power gain: >16.8 dB
•
Excellent gain flatness
•
Ideal for radar, L-Band avionics, communications, and industrial applications
•
Utilizes all-gold metallization and eutectic die attach for highest reliability
•
50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available
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120W L-Band Radar GaN Power Transistor and Pallet Amplifier
3
Electrical Specifications
3.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings at 25 °C unless otherwise specified.
Table 1 Absolute Maximum Ratings
Rating
Units
Maximum power dissipation
Device dissipation at 25 °C
265
W
Maximum voltage and current
Drain-Source voltage (VDSS)
125
V
Gate-Source voltage (VGS)
–8 to 0
V
Storage temperature (TSTG)
–55 to 125
°C
Operating junction temperature
200
°C
Maximum temperatures
3.2
Value
Electrical Characteristics at 25 °C
The following table shows the typical electrical characteristics at 25 °C
Table 2 Typical Electrical Characteristics at 25 °C
Symbol
Characteristics
Test Conditions
Min
Typ
POUT
Output power
PIN = 2.5 W, Freq = 1200, 1300, 1400 MHz
120
130
W
GP
Power gain
PIN = 2.5 W, Freq = 1200, 1300, 1400 MHz
16.8
17.16
dB
ȠD
Drain efficiency
PIN = 2.5 W, Freq = 1200, 1300, 1400 MHz
57
65
%
Dr
Droop
PIN = 2.5 W, Freq = 1200, 1300, 1400 MHz
VSWR-T
Load mismatch
tolerance
PIN = 2.5 W, Freq = 1500 MHz, 100 µS-10%
5:1
ӨJC
Junction-Case
thermal resistance
300 µS, 10% duty cycle
1.25
°C/W
Max
Units
0.15
Max
0.6
Units
dB
Bias Condition: VDD = 50 V, IDQ = 30 mA constant current (VGS = –2.0 to –4.5 V typical)
3.3
Functional Characteristics at 25 °C
Table 3 Typical Functional Characteristics at 25 °C
Symbol
Characteristic
Test Conditions
Min
Typ
ID(Off)
Drain leakage current
VGS = –8 V, VD = 125 V
12
mA
IG(Off)
Gate leakage current
VGS = –8 V, VD = 0 V
4
mA
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120W L-Band Radar GaN Power Transistor and Pallet Amplifier
3.4
Typical Broadband Performance Data (300 µS, 10% Pulsing)
Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing)
Frequency
PIN (W)
POUT (W)
ID (mA)
IRL (dB)
ȠD (%)
GP (dB)
Droop (dB)
1200 MHz
2.5
146
477
–7.0
65
17.65
0.15
1300 MHz
2.5
141
440
–10.0
69
17.50
0.15
1400 MHz
2.5
141
400
–8.5
76
17.50
0.14
Figure 4 Typical Broadband Performance Data Graphs
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120W L-Band Radar GaN Power Transistor and Pallet Amplifier
3.5
Critical Performance at PIN = 4 W (34 dBm)
Table 5 Critical Performance at PIN = 4 W (34 dBm)
Freq (GHz)
Test Condition
POUT (W)
GP (dB)
ȠD (%)
Droop (dB)
1.2
300 µS – 10%
146
17.65
65
0.15
1.2
1 mS – 10%
144
17.60
66
0.25
1.2
3 mS – 30%
135
17.30
61
0.60
1.3
300 µS – 10%
141
17.50
69
0.15
1.3
1 mS – 10%
144
17.60
70
0.25
1.3
3 mS – 30%
143
17.60
67
0.40
1.4
300 µS – 10%
141
17.50
76
0.15
1.4
1 mS – 10%
138
17.40
75
0.25
1.4
3 mS – 30%
144
17.60
74
0.40
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120W L-Band Radar GaN Power Transistor and Pallet Amplifier
4
Transistor Impedance Information
The following diagram shows the transistor impedance information for 1214GN-120E/EL/EP.
Figure 5 Impedance Definition
Output Matching
Network
D
Input Matching
Network
G
S
ZLOAD
50 Ω
ZSOURCE
50 Ω
Note:
ZSOURCE is looking into the input circuit
ZLOAD is looking into the output circuit
For information about source and load impedances for 1214GN-120E/EL/EP, contact your Microsemi
representative.
12
120W L-Band Radar GaN Power Transistor and Pallet Amplifier
5
Transistor Test Information
For the latest transistor test information for 1214GN-120E/EL/EP, contact your Microsemi
representative.
13
120W L-Band Radar GaN Power Transistor and Pallet Amplifier
6
Package Outline and Pin Information
The 1214GN-120E transistor is available in the 55-QQP case outline and the 1214GN-120EL
transistor is available in the 55-QQP case outline. The 1214GN-120EP is available in the 90-1214GN120EP pallet outline. All three products are configured for common source operation.
6.1
55-QQ Common Source Package Dimensions and Pin Information
Figure 6 55-QQ Package Dimensions and Pin Information
Pin 1: Drain, Pin 2: Source, Pin 3: Gate
Table 6 55-QQ Package Dimensions
Dim
Millimeters
Tol (mm)
Inches
Tol (in.)
A
13.970
0.250
0.550
0.010
B
4.570
0.250
0.160
0.010
C
3.860
0.330
0.152
0.013
D
1.270
0.130
0.050
0.005
E
1.020
0.130
0.040
0.005
F
1.700
0.130
0.067
0.005
G
0.130
0.025
0.005
0.001
H
8.130
0.250
0.320
0.010
I
45°
5°
45°
5°
J
5.080
0.250
0.200
0.010
K
2.54 DIA
0.130
0.100 DIA
0.005
L
1.270
0.130
0.050
0.005
M
9.530
0.130
0.375
0.005
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120W L-Band Radar GaN Power Transistor and Pallet Amplifier
6.2
55-QQP Common Source Package Dimensions and Pin Information
Figure 7 55-QQP Package Dimensions and Pin Information
Pin 1: Drain, Pin 2: Source, Pin 3: Gate
Table 7 55-QQP Package Dimensions
Dim
Millimeters
Tol (mm)
Inches
Tol (in.)
A
5.840
0.250
0.230
0.010
B
4.060
0.250
0.160
0.010
C
3.170
0.050
0.125
0.002
D
1.270
0.130
0.050
0.005
E
1.020
0.130
0.040
0.005
F
1.570
0.130
0.062
0.005
G
0.130
0.020
0.005
0.001
H
8.120
0.250
0.320
0.010
I
45°
5°
45°
5°
J
5.080
0.250
0.200
0.010
K
1.400
0.130
0.055
0.005
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120W L-Band Radar GaN Power Transistor and Pallet Amplifier
6.3
Overall Pallet Dimensions
Figure 8 Pallet Package Dimensions
Dimensions 1.200" × 0.600" × 0.150"
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