1011GN-125E-EL-EP

1011GN-125E/EL/EP Datasheet
125 W Interrogator/Transponder GaN Power
Transistor and Amplifier
125 W Interrogator/Transponder GaN Power Transistor and Amplifier
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2
125 W Interrogator/Transponder GaN Power Transistor and Amplifier
Revision History
1.1
Revision 1.0
Revision 1.0 was the first publication of this document.
3
125 W Interrogator/Transponder GaN Power Transistor and Amplifier
Contents
Revision History.............................................................................................................................. 3
1.1
Revision 1.0 ................................................................................................................................................ 3
2 Product Overview .................................................................................................................... 7
2.1
Applications ............................................................................................................................................... 7
2.1.1
Key Features ................................................................................................................................ 7
3 Electrical Specifications ............................................................................................................ 9
3.1
Absolute Maximum Ratings ....................................................................................................................... 9
3.2
Electrical Characteristics at 25 °C ............................................................................................................... 9
3.3
Functional Characteristics at 25 °C ............................................................................................................ 9
3.4
Typical Broadband Performance Data (128 µS, 10% Pulsing) .................................................................. 10
3.5
Critical Performance at PIN = 25 dBm ....................................................................................................... 11
4 Transistor Impedance Information......................................................................................... 12
5 Transistor Test Information .................................................................................................... 13
5.1
Transistor Test Circuit Diagram ................................................................................................................ 13
6 Product Outline and Pin Information ..................................................................................... 14
6.1
55-QQ Common Source Package Dimensions and Pin Information......................................................... 14
6.2
55-QQP Common Source Package Dimensions and Pin Information ...................................................... 15
6.3
Overall Pallet Dimensions ........................................................................................................................ 16
4
125 W Interrogator/Transponder GaN Power Transistor and Amplifier
List of Figures
Figure 1 Case Outlines 55-QQ Common Source (0.160" × 0.550") .............................................................................. 7
Figure 2 Case Outlines 55-QQP Common Source (0.160" × 0.230" Flange) ................................................................ 7
Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") ................................................................................. 7
Figure 4 Typical Broadband Performance Data Graphs ............................................................................................. 10
Figure 5 Impedance Definition................................................................................................................................... 12
Figure 6 Transistor Test Circuit .................................................................................................................................. 13
Figure 7 55-QQ Package Dimensions and Pin Information ........................................................................................ 14
Figure 8 55-QQP Package Dimensions and Pin Information ...................................................................................... 15
Figure 9 Pallet Package Dimensions .......................................................................................................................... 16
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
List of Tables
Table 1 Absolute Maximum Ratings ............................................................................................................................ 9
Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 9
Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 9
Table 4 Typical Broadband Performance Data (128 µS, 10% Pulsing) ....................................................................... 10
Table 5 Critical Performance at PIN = 25 dBm ............................................................................................................ 11
Table 6 Component List 1011GN-125E/EL ................................................................................................................. 13
Table 7 Package Dimensions ...................................................................................................................................... 15
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
2
Product Overview
The 1011GN-125E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT
transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed RF
output power under several pulse formats, including mode-S ELM, across the 1030 to 1090 MHz
band. The transistor has internal pre-match for optimal performance. The hermetically sealed
transistor is available in both the bolt-down flange 55-QQ package and the earless solder-down
flange 55-QQP package styles, as well as mounted on a compact 50 Ω IN/OUT pallet. Designed
specifically for IFF, Mode-S, TCAS, and avionics secondary radar applications, the transistor devices
utilize all-gold metallization and eutectic die attach to provide the highest reliability and superior
ruggedness. Export Classification: EAR-99.
Figure 1 Case Outlines 55-QQ Common Source (0.160" × 0.550")
Figure 2 Case Outlines 55-QQP Common Source (0.160" × 0.230" Flange)
Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150")
2.1
Applications
The 1011GN-125E and 1011GN-125EL transistors and the 1011GN-125EP pallet are specifically
designed for IFF, Mode-S, TCAS, and avionics secondary radar applications.
2.1.1
Key Features
The following are the key features of the 1011GN-125E, 1011GN-125EL, and 1011GN-125EP
products:
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
•
1030–1090 MHz, 125 W pulsed output power, 128 µS 10% pulsing
•
Common source, Class AB, 50 VDD bias voltage
•
High efficiency: >70% typical across the frequency band
•
Extremely compact size
•
High power gain: 18.5 dB typical
•
Excellent gain flatness: 0.1 dB typical
•
Ideal for IFF, Mode-S, TCAS, and avionics secondary radar applications
•
Utilizes all-gold metallization and eutectic die attach for highest reliability
•
50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
3
Electrical Specifications
3.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings at 25 °C unless otherwise specified.
Table 1 Absolute Maximum Ratings
Rating
Units
Maximum power dissipation
Device dissipation at 25 °C
214
W
Maximum voltage and current
Drain-Source voltage (VDSS)
125
V
Gate-Source voltage (VGS)
–8 to 0
V
Storage temperature (TSTG)
–55 to 125
°C
Operating junction temperature
200
°C
Maximum temperatures
3.2
Value
Electrical Characteristics at 25 °C
The following table shows the typical electrical characteristics at 25 °C.
Table 2 Typical Electrical Characteristics at 25 °C
Symbol
Characteristics
Test Conditions
Min
Typ
POUT
Output power
POUT = 2 W, Freq = 1030, 1090 MHz
125
150
W
GP
Power gain
PIN = 2 W, Freq = 1030, 1090 MHz
17.96
18.75
dB
ȠD
Drain efficiency
PIN = 2.5 W, Freq = 1030, 1090 MHz
62
72
%
Dr
Droop
PIN = 2 W, Freq = 1030, 1090 MHz
VSWR-T
Load mismatch tolerance
POUT = 125 W, Freq = 1030 MHz, 128 µS10%
5:1
ӨJC
Thermal resistance
32 µS, 2% duty cycle
0.68
0.1
Max
Units
0.5
dB
°C/W
Bias Condition: VDD = +50 V, IDQ = 60 mA constant current (VGS = –2.0 to –4.5 V typical)
3.3
Functional Characteristics at 25 °C
Table 3 Typical Functional Characteristics at 25 °C
Symbol
Characteristic
Test Conditions
ID(Off)
Drain leakage current
IG(Off)
Gate leakage current
Min
Typ
Max
Units
VGS = –8 V, VD = 125 V
12
mA
VGS = –8 V, VD = 0 V
4
mA
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
3.4
Typical Broadband Performance Data (128 µS, 10% Pulsing)
Table 4 Typical Broadband Performance Data (128 µS, 10% Pulsing)
Frequency
PIN (W)
POUT (W)
ID (mA)
IRL (dB)
ȠD (%)
GP (dB)
Droop (dB)
1030 MHz
2
150
450
–8.5
71
18.75
0.1
1090 MHz
2
148
430
–16.0
74
18.70
0.1
Figure 4 Typical Broadband Performance Data Graphs
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
3.5
Critical Performance at PIN = 25 dBm
Table 5 Critical Performance at PIN = 25 dBm
Freq (GHz)
Test Condition
POUT (W)
GP (dB)
ȠD (%)
Droop (dB)
1.03
32 µS – 2%
158
19.00
79
0.05
1.03
128 µS – 10%
149
18.75
71
0.10
1.03
1 mS – 10%
147
18.70
70
0.30
1.09
32 µS – 2%
157
18.95
78
0.05
1.09
128 µS – 10%
148
18.70
74
0.10
1.09
1 mS – 10%
146
18.65
73
0.30
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
4
Transistor Impedance Information
The following diagram shows the transistor impedance information for 1011GN-125E/EL/EP.
Figure 5 Impedance Definition
Output Matching
Network
D
Input Matching
Network
G
S
ZLOAD
50 Ω
ZSOURCE
50 Ω
Note:
ZSOURCE is looking into the input circuit
ZLOAD is looking into the output circuit
For information about source and load impedances for 1011GN-125E/EL/EP, contact your Microsemi
representative.
12
125 W Interrogator/Transponder GaN Power Transistor and Amplifier
5
Transistor Test Information
5.1
Transistor Test Circuit Diagram
Figure 6 Transistor Test Circuit
The board material is Roger Duroid 6006, 0.250" thickness, and εr = 6.15.
The following table lists the components for 1011GN-125E/EL.
Table 6 Component List 1011GN-125E/EL
Item
Description
Value
C11
Chip capacitor A size (ATC 600S)
62 pF
C2
Chip capacitor A size (ATC 600S)
8.2 pF
C3
Chip capacitor A size (ATC 600S)
10 pF
C41
Chip capacitor A size (ATC 600S)
270 pF
C5
Chip capacitor B size
4.7 uF
C6
Chip capacitor A size (ATC 600S)
3 pF
C7
Chip capacitor A size (ATC 600S)
2.7 pF
C8
Chip capacitor A size (ATC 100A)
100 pF
C9
Electrolytic capacitor (63 V)
100 uF
R1
Chip resistor size 0603/0805
10 Ω
R2
Chip resistor size 0603/0805
5.1 Ω
R3
Chip resistor size 0603/0805
10 Ω
L1
Chip resistor size 0603/0805
4.3 nH
L22
Chip inductor size 1608 (Venkel: LM CI1608-1N2ST)
1.2 nH
L31
Chip inductor size 1608 (Venkel: LM CI1608-1N2ST)
1.2 nH
1.
Two of these are needed.
2.
Three of these are needed.
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
6
Product Outline and Pin Information
The 1011GN-125E transistor is available in the 55-QQP case outline and the 1011GN-125EL
transistor is available in the 55-QQP case outline. The 1011GN-125EP is available as a pallet. All
three products are configured for common source operation.
6.1
55-QQ Common Source Package Dimensions and Pin Information
Figure 7 55-QQ Package Dimensions and Pin Information
Pin 1: Drain, Pin 2: Source, Pin 3: Gate
Dim
Millimeters
Tol (mm)
Inches
Tol (in.)
A
13.970
0.250
0.550
0.010
B
4.570
0.250
0.160
0.010
C
3.860
0.330
0.152
0.013
D
1.270
0.130
0.050
0.005
E
1.020
0.130
0.040
0.005
F
1.700
0.130
0.067
0.005
G
0.130
0.025
0.005
0.001
H
8.130
0.250
0.320
0.010
I
45°
5°
45°
5°
J
5.080
0.250
0.200
0.010
K
2.54 DIA
0.130
0.100 DIA
0.005
L
1.270
0.130
0.050
0.005
M
9.530
0.130
0.375
0.005
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
6.2
55-QQP Common Source Package Dimensions and Pin Information
Figure 8 55-QQP Package Dimensions and Pin Information
Pin 1: Drain, Pin 2: Source, Pin 3: Gate
Table 7 Package Dimensions
Dim
Millimeters
Tol (mm)
Inches
Tol (in.)
A
5.840
0.250
0.230
0.010
B
4.060
0.250
0.160
0.010
C
3.170
0.050
0.125
0.002
D
1.270
0.130
0.050
0.005
E
1.020
0.130
0.040
0.005
F
1.570
0.130
0.062
0.005
G
0.130
0.020
0.005
0.001
H
8.120
0.250
0.320
0.010
I
45°
5°
45°
5°
J
5.080
0.250
0.200
0.010
K
1.400
0.130
0.055
0.005
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125 W Interrogator/Transponder GaN Power Transistor and Amplifier
6.3
Overall Pallet Dimensions
Figure 9 Pallet Package Dimensions
Dimensions 1.200" × 0.600" × 0.150"
16
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