1416GN-120E-EL-EP

1416GN-120E/EL/EP Datasheet
120 W DME/L-Band Radar Driver GaN Power
Transistor
120 W DME/L-Band Radar Driver GaN Power Transistor
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120 W DME/L-Band Radar Driver GaN Power Transistor
Revision History
1.1
Revision 1.0
Revision 1.0 was the first publication of this document.
3
120 W DME/L-Band Radar Driver GaN Power Transistor
Contents
Revision History.............................................................................................................................. 3
1.1
Revision 1.0 ................................................................................................................................................ 3
2 Product Overview .................................................................................................................... 7
2.1
Applications ............................................................................................................................................... 7
2.1.1
Key Features ................................................................................................................................ 8
3 Electrical Specifications ............................................................................................................ 9
3.1
Absolute Maximum Ratings ....................................................................................................................... 9
3.2
Electrical Characteristics at 25 °C ............................................................................................................... 9
3.3
Functional Characteristics at 25 °C ............................................................................................................ 9
3.4
Typical Broadband Performance Data (300 µS, 10% Pulsing) .................................................................. 10
4 Transistor Impedance Information......................................................................................... 11
5 Transistor Test Information .................................................................................................... 12
5.1
Transistor Test Circuit Diagram ................................................................................................................ 12
6 Package Outline and Pin Information .................................................................................... 13
6.1
55-QQ Common Source Package Dimensions and Terminal Information ................................................ 13
6.2
55-QQP Common Source Package Dimensions and Terminal Information.............................................. 14
6.3
Overall Pallet Dimensions ........................................................................................................................ 15
4
120 W DME/L-Band Radar Driver GaN Power Transistor
List of Figures
Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")................................................................................ 7
Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230").............................................................................. 7
Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") ................................................................................. 7
Figure 4 Typical Broadband Performance Data Graphs ............................................................................................. 10
Figure 5 Impedance Definition................................................................................................................................... 11
Figure 6 Transistor Test Circuit .................................................................................................................................. 12
Figure 7 55-QQ Package Dimensions and Terminal Information ............................................................................... 13
Figure 8 55-QQP Package Dimensions and Terminal Information ............................................................................. 14
Figure 9 Pallet Package Dimensions .......................................................................................................................... 15
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120 W DME/L-Band Radar Driver GaN Power Transistor
List of Tables
Table 1 Absolute Maximum Ratings ............................................................................................................................ 9
Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 9
Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 9
Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) ....................................................................... 10
Table 5 Component List 1416GN-120E/EL ................................................................................................................. 12
Table 6 55-QQ Package Dimensions .......................................................................................................................... 13
Table 7 55-QQP Package Dimensions ........................................................................................................................ 14
6
120 W DME/L-Band Radar Driver GaN Power Transistor
2
Product Overview
The 1416GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT
transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power
under 300 μS pulse width and 10% long term duty cycle pulsing across the 1400 MHz to 1600 MHz
band. The transistor has an internal pre-match for optimal performance. The hermetically sealed
transistor is available in two package types, both the bolt-down flange 55-QQ package and the
solder-down earless flange 55-QQP package. It is also available mounted in a 50 Ω IN/OUT pallet.
These three products are specifically designed for use as drivers in DME (Distance Measuring
Equipment) and L-Band pulsed radar transmit power amplifiers, and they utilize all-gold
metallization and eutectic die attach to provide the highest reliability and superior ruggedness.
Export Classification: EAR-99.
Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")
Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230")
Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150")
2.1
Applications
The 1416GN-120E and the 1416GN-120EL transistors and the 1416GN-120EP pallet are specifically
designed for radar, L-Band avionics, and communications applications.
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120 W DME/L-Band Radar Driver GaN Power Transistor
2.1.1
Key Features
The following are the key features of the 1416GN-120E/EL/EP E-Class Earless/Eared GaN transistor
products:
•
1400 MHz–1600 MHz, 120 W pulsed output power, 300 µS-10% pulsing
•
Common source, Class AB, 50 VDD bias voltage
•
High efficiency: >60% typical across the frequency band
•
Extremely compact size
•
High power gain: 17 dB typical
•
Excellent gain flatness: 0.1 dB typical
•
Ideal for radar, L-Band avionics, and communications applications
•
Utilizes all-gold metallization and eutectic die attach for highest reliability
•
50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available
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120 W DME/L-Band Radar Driver GaN Power Transistor
3
Electrical Specifications
3.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings at 25 °C unless otherwise specified.
Table 1 Absolute Maximum Ratings
Rating
Units
Maximum power dissipation
Device dissipation at 25 °C
265
W
Maximum voltage and current
Drain-Source voltage (VDSS)
125
V
Gate-Source voltage (VGS)
–8 to 0
V
Storage temperature (TSTG)
–55 to 125
°C
Operating junction temperature
200
°C
Maximum temperatures
3.2
Value
Electrical Characteristics at 25 °C
The following table shows the typical electrical characteristics at 25 °C
Table 2 Typical Electrical Characteristics at 25 °C
Symbol
Characteristics
Test Conditions
Min
Typ
POUT
Output power
PIN = 2.5 W, Freq = 1400, 1500, 1600 MHz
120
130
W
GP
Power gain
PIN = 2.5 W, Freq = 1400, 1500, 1600 MHz
16.8
17.2
dB
ȠD
Drain efficiency
PIN = 2.5 W, Freq = 1400, 1500, 1600 MHz
57
65
%
Dr
Droop
PIN = 2.5 W, Freq = 1400, 1500, 1600 MHz
VSWR-T
Load mismatch
tolerance
POUT = 2.5 W, Freq = 1500 MHz, 100 µS-10%
5:1
ӨJC
Thermal
resistance
300 µS, 10% duty cycle
1.25
0.3
Max
0.6
Units
dB
°C/W
Bias Condition: VDD = 50 V, IDQ = 30 mA constant current (VGS = –2.0 to –4.5 V typical)
3.3
Functional Characteristics at 25 °C
Table 3 Typical Functional Characteristics at 25 °C
Symbol
Characteristics
Test Conditions
ID(Off)
Drain leakage current
IG(Off)
Gate leakage current
Min
Typ
Max
Units
VGS = –8 V, VD = 125 V
12
mA
VGS = –8 V, VD = 0 V
4
mA
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120 W DME/L-Band Radar Driver GaN Power Transistor
3.4
Typical Broadband Performance Data (300 µS, 10% Pulsing)
Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing)
Frequency
PIN (W)
POUT (W)
ID (mA)
IRL (dB)
ȠD (%)
GP (dB)
Droop (dB)
1400 MHz
2.5
134
460
–6.0
64
17.3
0.35
1500 MHz
2.5
144
450
–12.0
69
17.6
0.30
1600 MHz
2.5
132
410
–6.0
71
17.2
0.20
Figure 4 Typical Broadband Performance Data Graphs
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120 W DME/L-Band Radar Driver GaN Power Transistor
4
Transistor Impedance Information
The following diagram shows the transistor impedance information for 1416GN-120E/EL/EP.
Figure 5 Impedance Definition
Output Matching
Network
D
Input Matching
Network
G
S
ZLOAD
50 Ω
ZSOURCE
50 Ω
Note:
ZSOURCE is looking into the input circuit
ZLOAD is looking into the output circuit
For information about source and load impedances for 1416GN-120E/EL/EP, contact your Microsemi
representative.
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120 W DME/L-Band Radar Driver GaN Power Transistor
5
Transistor Test Information
5.1
Transistor Test Circuit Diagram
Figure 6 Transistor Test Circuit
Note: Distance (D) = 0.090"–0.0950"
The board material is Rogers Duroid 6006, 0.250" thickness, and εr = 6.15.
The following table lists the components for 1416GN-120E/EL.
Table 5 Component List 1416GN-120E/EL
Item
Description
Value
C1
Chip capacitor A size – ATC600S series
68 pF
C2
Chip capacitor A size – ATC600S series
4.7 pF
C3
Chip capacitor A size – ATC600S series
0.9 pF
C41
Chip capacitor A size
470 pF
C51
Chip capacitor 1210 size
4.7 uF
C6
Chip capacitor A size – ATC600S series
3 pF
C7
Chip capacitor A size – ATC600S series
0.5 pF to 0.7 pF
C8
Chip capacitor A size – ATC600S series
1 pF
C9
Electrolytic capacitor (63 V)
470 uF
C10
Chip capacitor A size – ATC600S series
82 pF
R1
Chip resistor size 0805
10 Ω
R2
Chip resistor size 0805
5.1 Ω
L1
Chip inductor size 0603
47 nH
L21
Chip inductor size 1608 (500 mA current)
1.2 nH
1.
Two of these are needed
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120 W DME/L-Band Radar Driver GaN Power Transistor
6
Package Outline and Pin Information
The 1416GN-125E transistor is available in the 55-QQP case outline and the 1416GN-125EL
transistor is available in the 55-QQP case outline. The 1416GN-125EP is available in the 90-1416GN250EP pallet outline. All three products are configured for common source operation.
6.1
55-QQ Common Source Package Dimensions and Terminal Information
Figure 7 55-QQ Package Dimensions and Terminal Information
Pin 1: Drain, Pin 2: Source, Pin 3: Gate
Table 6 55-QQ Package Dimensions
Dim
Millimeters
Tol (mm)
Inches
Tol (in.)
A
13.970
0.250
0.550
0.010
B
4.570
0.250
0.160
0.010
C
3.860
0.330
0.152
0.013
D
1.270
0.130
0.050
0.005
E
1.020
0.130
0.040
0.005
F
1.700
0.130
0.067
0.005
G
0.130
0.025
0.005
0.001
H
8.130
0.250
0.320
0.010
I
45°
5°
45°
5°
J
5.080
0.250
0.200
0.010
K
2.54 DIA
0.130
0.100 DIA
0.005
L
1.270
0.130
0.050
0.005
M
9.530
0.130
0.375
0.005
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120 W DME/L-Band Radar Driver GaN Power Transistor
6.2
55-QQP Common Source Package Dimensions and Terminal
Information
Figure 8 55-QQP Package Dimensions and Terminal Information
Pin 1: Drain, Pin 2: Source, Pin 3: Gate
Table 7 55-QQP Package Dimensions
Dim
Millimeters
Tol (mm)
Inches
Tol (in.)
A
5.840
0.250
0.230
0.010
B
4.060
0.250
0.160
0.010
C
3.170
0.050
0.125
0.002
D
1.270
0.130
0.050
0.005
E
1.020
0.130
0.040
0.005
F
1.570
0.130
0.062
0.005
G
0.130
0.020
0.005
0.001
H
8.120
0.250
0.320
0.010
I
45°
5°
45°
5°
J
5.080
0.250
0.200
0.010
K
1.400
0.130
0.055
0.005
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120 W DME/L-Band Radar Driver GaN Power Transistor
6.3
Overall Pallet Dimensions
Figure 9 Pallet Package Dimensions
Dimensions 1.200" × 0.600" × 0.150"
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