Delivering
POWER
Excellence
RELIABILITY REPORT
1/03
Power Semiconductor Devices
January 2001 - December 2002
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054
USA
IXDN0010
Published February 2003
IXYS Semiconductor GmbH
Edisonstrasse 15
D-68623 Lampertheim
Germany
Humidity Test
QUALITY AND RELIABILITY
Failure Modes: Degradation of electrical leakage
characteristics due to moisture penetration into plastic
packages.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM, IDSS,
ICES, IDRM, IRRM, IGSS, IGES, VTH.
IXYS is committed to setting a new standard for excellence in Power Semiconductors. Reflecting our dedication to industry leadership in the manufacture of
medium to high power devices, reliability has assumed a primary position in raw material selection,
design, and process technology.
Reliability utilizes information derived from applied
research, engineering design, analysis of field
applications and accelerated stress testing and
integrates this knowledge to optimize device design
and manufacturing processes.
All areas that impact reliability have received considerable attention in order to achieve our goal to be the
# 1 Reliability Supplier of Power Semiconductor products. We believe IXYS products should be the most
reliable components in your system.
We have committed significant resources to continuously improve and optimize our device design, wafer
fab processes, assembly processes and test capabilities. As a result of this investment, IXYS has realized
a dramatic improvement in reliability performance on
all standardized tests throughout the product line.
Excellence in product reliability is “built-in”, not testedin. Moreover, it requires a total systems approach,
involving all parties: from design to raw materials to
manufacturing.
In addition to qualifying new products released to the
market, life and environmental tests are periodically
performed on standard products to maintain feedback
on assembly and fabrication performance to assure
product reliability. Further information on reliability of
power devices is provided on pages M 2-6 to M 2-8 of
the IXYS Data Book Vol. 2.
Power Cycle
Failure Modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling can
cause thermal and electrical performance degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF, IDSS,
ICES, IDRM, IRRM, BVDSS, BVCES, VDRRM, VRRM.
TERMS IN TABLES
SUMMARY TABLES 1 AND 2:
AF: acceleration factor
AF = exp { Ea *[ (T2 -T1) / ( T2 * T1 ) ] / k }
(1)
Ea: activation energy; @ HTRB Ea = 1.0 eV
@ HTGB Ea = 0.4 eV
k: Boltzmann’s constant 8.6·10-5 eV/K
T1: abs. application junction temperature (273+Tj) K
T2: abs. test junction temperature (273+Tj) K
UCL: upper confidence limit (60%)
Total Failures @ 60% UCL:
RELIABILITY TESTS
N = r + dr
High Temperature Reverse Bias (HTRB)
Failure Modes: Gradual degradation of break-down
characteristics due to presence of foreign materials
and polar/ionic contaminants disturbing the electric
field termination structure.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM, IDSS,
ICES, IDRM, IRRM, VTH.
(2)
r: number of failed devices
dr: additional term, depending on both r and UCL
MTTF: Mean Time To Failures = 1/Failure Rate
FIT: 1 FIT = 1 failure / 109 hrs
High Temperature Gate Bias (HTGB)
Failure Modes: Rupture of the gate oxide due to localized thickness variations, structural anomalies, particulates in the oxide, channel inversion due to presence of mobile ions in the gate oxide.
Sensitive Parameters: IGSS, IGES,VTH, IDSS, ICES.
TABLES 3:
∆T: max Tj - min Tj during Test
Temperature Cycle
DEFINITION OF FAILURE
Failure modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling,
causing thermal and electrical performance degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF.
Parametric failure means a parameter specified in
data sheet is exceeded as specified in IEC 60747-1
and the functionality of the device is not impaired.
2
Summary of Tables 1A - 1J: HTRB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 1A
Table 1B
Table 1C
Table1D
Table 1E
Table 1F
Table 1G
Table 1H
Table 1J
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
ISOPLUS
Breakover
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
711
43
49
1387
0
0.92
84423
5055
7
70
2
3.1
3659
219
27
270
0
0.92
6087
365
23
219
0
0.92
2613
156
29
490
0
0.92
3603
216
9
160
0
0.92
1294
77
18
310
0
0.92
19
370
0
-
7228
433
5
100
0
0.92
1294100
161
2682
36720
1
23
251440
31
521
151132
19
313
352123
44
730
255323
32
529
710968
88
1473
622003
-
127280
16
264
Summary of Table 2A - 2C: HTGB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 2A
Table 2B
Table 2C
MOSFET/IGBT
MOSFET/IGBT
ISOPLUS
discrete device *)
Module
901
292
28
769
0
0.92
20952
6781
7
70
0
0.92
2
40
0
-
1021360
127
392
43910
5
17
40000
-
*) including ISOPLUS
3
Diode
Summary of Tables 3A - 3H: Power Cycle
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 3A
Table 3B
Table 3C
Table3D
Table 3E
Table 3F
Table 3G
Table 3H
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
20
509
1
7010000
3
22
0
2600000
11
110
1
1150000
14
140
0
1200000
17
260
0
1300000
7
130
0
550000
13
220
0
1260000
8
160
0
1200000
Summary of Tables 4A - 4J: Temperature Cycle
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 4A
Table 4B
Table 4C
Table4D
Table 4E
Table 4F
Table 4G
Table 4H
Table 4J
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
Breakover
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
27
600
0
103500
10
100
0
5300
17
204
0
37600
21
215
1
8600
28
494
0
21950
17
300
2
15500
20
350
0
26600
14
280
0
11400
10
180
0
15200
Diode
Summary of Tables 5A - 5H: Humidity Test
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Hours
Table 5A
Table 5B
Table 5C
Table5D
Table 5E
Table 5F
Table 5G
Table 5H
Table 5J
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
Breakover
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
22
569
5
83832
1
10
0
1680
6
60
0
17680
8
92
0
11704
12
210
0
23520
1
20
0
960
7
169
0
32232
*) including ISOPLUS
4
Diode
13
289
2
40392
4
80
0
4800
HTRB (Tables 1A .. 1J)
TABLE 1A: MOSFET/IGBT discrete device
Date Code
# Part Number
or
Voltage
Test #
[V]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
FDM21-05QC
FII50-12E
IXDA20N120AS
IXDN75N120
IXEH40N120
IXER60N120
IXFF24N100
IXFH15N80
IXFH15N80
IXFH16N90Q
IXFH26N50
IXFH26N50
IXFH26N50
IXFH26N50
IXFH26N50
IXFH26N50
IXFH28N50F
IXFH32N50
IXFH32N50
IXFH32N50
IXFH32N50
IXFH32N50
IXFH32N50Q
IXFH32N50Q
IXFH32N50Q
IXFH58N20
IXFH58N20
IXFH58N20
IXFH60N20F
IXFH6N100F
IXFH6N100Q
IXFH9N80
IXFK27N80
IXFK55N50F
IXFK90N30
IXFN36N100
IXFN36N100
IXFN44N80
IXFN48N50Q
IXFN55N50F
IXFX27N80Q
IXFX34N80
IXFX55N50
IXTH9225
IXTK120N25
IXTK180N15
IXTK62N25
IXTK90N15
IXTM9226
314
309
446
269
539
488
389
0113
0224
0242
0110
0116
0119
0134
0139
0228
0151
0104
0117
0119
0119
0224
0120
0120
0147
0116
0119
0119
0151
9936
0143
0229
0234
0216
0244
0116
0229
0110
0110
0137
0236
0212
0223
0119
0151
0151
0150
0150
0111
400
960
960
960
960
960
800
640
640
720
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
160
160
160
160
800
800
640
640
400
240
800
800
640
400
400
640
640
400
800
200
120
200
120
800
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
105
105
125
125
125
125
105
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
Sample
Size
1000
1000
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
5
20
20
20
10
20
20
10
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
29
30
30
30
30
27
30
29
30
30
30
30
30
49
25
25
39
33
21
Param.
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
20000
20000
3360
1680
20000
20000
10000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
29000
30000
30000
30000
30000
27000
30000
29000
30000
30000
30000
30000
30000
49000
25000
25000
39000
33000
21000
Remark
TABLE 1B: MOSFET/IGBT Module
Date Code
# Part Number
or
Voltage
Test #
[V]
1
2
3
4
5
6
7
MII75-12
MII75-12A3
MUBW15-12A7
MWI30-06A7
VMM90-09F
VMO440-02
VMO440-02FL
262
262
392
553
508
349
419
960
960
1120
480
720
160
160
TABLE 1C: Thyristor/Diode Module
Date Code
# Part Number
or
Voltage
Test #
[V]
1 MCC19-14
283
980
2 MCC21-14
396
980
3 MCC250-14
249
980
4 MCC250-14
249
980
5 MCC26-16
350
1120
6 MCC26-16
350
1120
7 MCC312-16
449
1120
8 MCC44-16io1
592
1120
9 MCC56-16io1
448
1120
10 MCC95-16io1
598
1120
11 MCC95-16io1
599
1280
12 MCD162-16
564
1120
13 MCD162-16io1
564
1120
14 MCO500-14
299
980
15 MDD172-16
400
1120
16 MDD172-16
400
1120
17 MDD26-16
519
1120
18 MDD310-16
324
1120
19 MDD56
334
1260
20 MDD56
334
1260
21 MDD56-16
222
1120
22 MDD56-18
423
1280
23 MDD56-18
423
1260
24 MDD56-18
423
1260
25 MDD56-18
423
1260
26 MDD72-16
214
1120
27 MDD95-16
466
1120
TABLE 1D: Controller/Rectifier Bridge
Date Code
# Part Number
or
Voltage
Test #
[V]
1
2
3
4
5
6
7
8
9
10
11
12
13
MMO74-16
VBO13-16AO2
VBO13-16AO2
VBO25-16A
VBO30-16NO7
VHF28-16
VHF28-16
VHF28-16io5
VHF36-16
VUB120
VUB120
VUB120
VUB120-12MO1
239
246
274
523
352
358
358
404
463
321
321
366
436
1120
1120
1120
1120
1120
1120
1120
1120
1120
960
1120
960
1120
Temp.
[°C]
125
125
125
125
125
125
125
Temp.
[°C]
125
125
125
140
125
140
125
125
125
125
125
125
125
125
150
125
125
125
125
125
125
125
125
125
125
150
125
Temp.
[°C]
125
125
125
125
125
125
140
125
125
125
125
125
125
Time
[hrs]
Sample
Size
1000
168
168
168
1000
1000
168
Time
[hrs]
10
10
10
10
10
10
10
Sample
Size
168
168
168
1000
168
1000
168
168
168
168
168
168
1100
168
1000
168
168
168
168
168
168
1000
1000
1000
1000
1000
168
Time
[hrs]
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Sample
Size
1000
168
1000
168
168
168
1000
1000
168
168
168
100
168
6
10
10
10
10
10
10
10
10
10
8
8
10
3
Param.
Failures
0
0
0
0
1
1
0
Param.
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Param.
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
10000
1680
1680
1680
10000
10000
1680
Device Hours
[hrs]
Remark
Idss @ 1000 hrs
Remark
1680
1680
1680
10000
1680
10000
1680
1680
1680
1680
1680
1680
11000
1680
10000
1680
1680
1680
1680
1680
1680
10000
10000
10000
10000
10000
1680
Device Hours
[hrs]
10000
1680
10000
1680
1680
1680
10000
10000
1680
1344
1344
1000
504
Remark
TABLE 1D(cont'd): Controller/Rectifier Bridge
Date Code
# Part Number
or
Voltage Temp.
Test #
[V]
[°C]
14
15
16
17
18
19
20
21
22
23
VUB160-16
VUB60-12NO1"C"
VUE22-12NO7
VUO34-18
VUO34-18
VUO50-16
VUO52-18
VUO86-16NO7
VVZ40-16
VVZ40-16
351
341
225
422
422
625
256
428
231
232
1120
960
960
1260
1260
1120
1260
1120
1120
1120
125
125
125
125
150
125
125
125
125
125
Time
[hrs]
Sample
Size
168
1000
168
168
1000
168
168
168
168
168
10
10
10
10
10
10
10
10
10
10
Param.
Failures
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
Remark
1680
10000
1680
1680
10000
1680
1680
1680
1680
1680
TABLE 1E: FRED
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Part Number
DSEC59-06BC
DSEC60-03A
DSEC60-03AR
DSEC60-06A
DSEE15-12CC
DSEE15-12CC
DSEI120-06A
DSEI20-12A
DSEI2x101-06
DSEI2x121-02A
DSEI30-06A
DSEI60-06A
DSEK60-02
DSEP12-12A
DSEP12-12A
DSEP12-12A
DSEP15-12CR
DSEP2x31-12A
DSEP30-06BR
DSEP30-06CR
DSEP30-06CR
DSEP30-12CR
DSEP60-12
DSEP8-06B
DSEP8-06B
MEK350-02B
MEK350-02B
MEK90-06F
MEK95-06DA"E"
Date Code
or
Voltage
Test #
[V]
304
322
600
560
303
303
554
486
320
483
206
296
465
254
254
363
381
575
209
525
525
329
236
552
552
487
487
499
403
480
240
240
480
480
480
480
960
480
160
480
480
160
960
960
960
960
960
480
480
480
960
960
480
480
160
160
480
480
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
150
162
125
125
125
125
125
150
125
125
125
125
125
125
125
125
Time
[hrs]
Sample
Size
1000
168
168
168
1000
1000
1000
168
168
168
168
1000
168
1000
500
168
168
168
168
168
168
1000
168
1000
1000
168
1000
168
168
20
20
20
20
20
20
20
20
10
10
20
20
20
10
10
20
20
10
20
20
20
20
20
20
20
10
10
10
10
Param.
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
Remark
20000
3360
3360
3360
20000
20000
20000
3360
1680
1680
3360
20000
3360
10000
5000
3360
3360
1680
3360
3360
3360
20000
3360
20000
20000
1680
10000
1680
1680
TABLE 1F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
DGS3-03AS
DGSK20-018A
DGSK20-025AS
DSS20-01AR
DSS2x160-01A
DSSK28-01A
DSSK70-008A
DSSK80-0008D
DSSK80-0025B
Date Code
or
Voltage
Test #
[V]
582
518
331
305
430
513
501
500
201
240
144
200
100
100
100
80
8
17
Temp.
[°C]
125
125
125
150
125
150
125
100
150
Time
[hrs]
Sample
Size
1000
168
1000
1000
168
168
1000
1000
1000
7
20
20
20
20
10
20
20
20
10
Param.
Failures
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
20000
3360
20000
20000
1680
3360
20000
20000
10000
Remark
TABLE 1G: Thyristor/Diode discrete device
Date Code
# Part Number
or
Voltage
Test #
[V]
1 CS19-08ho1S
338
560
2 CS29-12io1C
306
840
3 CS30-16io1
417
1120
4 CS30-16io1
556
1120
5 CS30-16io1
556
1120
6 CS35-14io4
365
980
7 CS45-16io1R
270
1120
8 CS60-14io1
594
980
9 CS8-12io2
210
840
10 DSA17-18A
259
1260
11 DSA35-18
407
1260
12 DSDI30-06A
286
480
13 DSI30-08AC
307
560
14 DSI30-16AS
218
1120
15 DSIK45-16AR
608
1120
16 DSP25-16A
295
1120
17 DSP25-16AR
318
1120
18 DSP8-12AC
529
840
Temp.
[°C]
125
125
125
125
125
125
125
125
150
150
150
125
150
150
150
150
150
150
Time
[hrs]
Sample
Size
1000
1000
168
1000
1000
168
168
1000
168
168
168
168
1000
1000
1000
1000
168
1000
20
20
20
10
10
10
20
30
10
10
10
20
20
20
20
20
20
20
Param.
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
Remark
20000
20000
3360
10000
10000
1680
3360
30000
1680
1680
1680
3360
20000
20000
20000
20000
3360
20000
TABLE 1H: ISOPLUS
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Part Number
CS29-12io1C
CS45-16io1R
DSEC59-06BC
DSEC60-03AR
DSEE15-12CC
DSEE15-12CC
DSEK60-02
DSEP15-12CR
DSEP30-06BR
DSEP30-06CR
DSEP30-06CR
DSEP30-12CR
DSI30-08AC
DSIK45-16AR
DSP25-16AR
DSP8-12AC
DSS20-01AR
IXER60N120
IXFF24N100
Date Code
or
Voltage
Test #
[V]
306
270
304
600
303
303
465
381
209
525
525
329
307
608
318
529
305
488
389
840
1120
480
240
480
480
160
960
480
480
480
960
560
1120
1120
840
100
960
800
TABLE 1J: Breakover Diode
Date Code
# Part Number
or
Voltage
Test #
[V]
1
2
3
4
5
IXBOD1-06
IXBOD1-07
IXBOD1-09
IXBOD1-09
IXBOD1-15R
521
453
370
370
228
480
560
720
720
1200
Temp.
[°C]
125
125
125
125
125
125
125
125
125
150
125
125
150
150
150
150
150
125
125
Temp.
[°C]
125
125
150
125
125
Time
[hrs]
Sample
Size
1000
168
1000
168
1000
1000
168
168
168
168
168
1000
1000
1000
168
1000
1000
1000
1000
Time
[hrs]
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
Sample
Size
168
240
1000
168
168
8
20
20
20
20
20
Param.
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Param.
Failures
0
0
0
0
0
Device Hours
[hrs]
Remark
20000
3360
20000
3360
20000
20000
3360
3360
3360
3360
3360
20000
20000
20000
3360
20000
20000
20000
10000
Device Hours
[hrs]
3360
4800
20000
3360
3360
Remark
HTGB (Tables 2A .. 2C)
TABLE 2A: MOSFET/IGBT discrete device
Date Code
# Part Number
or
Voltage
Test #
[V]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
FII50-12E
IXBH9N160G
IXDN55N120D1
IXFH15N80
IXFH15N80
IXFH16N90Q
IXFH26N50
IXFH26N50
IXFH28N50F
IXFH32N50
IXFH32N50
IXFH32N50Q
IXFH60N20F
IXFH6N100F
IXFH9N80
IXFK27N80
IXFK55N50F
IXFK90N30
IXFN36N100
IXFN44N80
IXFN48N50Q
IXFN55N50F
IXFX27N80Q
IXFX34N80
IXFX4N100Q
IXFX55N50
IXLF19N250
IXTN36N50
309
440
596
0113
SP 0224
SP 0242
0110
SP 0228
SP 0151
0104
SK 0224
SP 0147
SP 0151
SP 9936
TK 0229
SP 0234
SP 0216
SP 0244
SP 0229
0110
0110
SP 0137
SP 0236
SP 0212
TP0149
SP 0223
577
199
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
30
16
TABLE 2B: MOSFET/IGBT Module
Date Code
# Part Number
or
Voltage
Test #
[V]
1
2
3
4
5
6
7
MUBW25-12A7
MUBW25-12A7
MUBW30-06A7
MUBW30-06A7
VMM300-03FP
VMO650-01
VMO650-01
496
496
391
391
402
233
233
16
16
16
16
16
16
16
Temp.
[°C]
125
125
125
150
125
125
150
125
150
150
125
125
150
150
125
125
125
125
125
150
150
150
125
125
125
125
125
125
Temp.
[°C]
150
125
150
125
125
140
125
Time
[hrs]
Sample
Size
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
Time
[hrs]
20
20
10
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
29
30
30
30
30
20
10
Sample
Size
168
1685
168
168
168
1000
168
10
10
10
10
10
10
10
Param.
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Param.
Failures
0
0
0
0
0
0
0
Device Hours
[hrs]
Remark
20000
20000
1680
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
29000
30000
30000
30000
30000
20000
1680
Device Hours
[hrs]
Remark
1680
16850
1680
1680
1680
10000
1680
TABLE 2C: ISOPLUS
#
Part Number
1
2
FII50-12E
IXLF19N250
Date Code
or
Voltage
Test #
[V]
309
577
16
30
Temp.
[°C]
125
125
Time
[hrs]
Sample
Size
1000
1000
9
20
20
Param.
Failures
0
0
Device Hours
[hrs]
20000
20000
Remark
POWER CYCLE (Tables 3A ..3H)
TABLE 3A: MOSFET/IGBT single device
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
FII50-12E
IXBH9N160G
IXDN75N120
IXFH26N50
IXFH26N50
IXFH26N50
IXFH32N50
IXFH58N20
IXFH58N20
IXFH58N20
IXFK90N30
IXFN44N80
IXFN48N50Q
IXFN55N50
IXFN55N50F
IXFX27N80Q
IXFX4N100Q
IXFX55N50
IXGH26N50
IXFN80N50
Date Code
Tj(max)
or
[°C]
Test #
309
440
269
0119
0119
SP 0228
0119
0116
0119
0119
SP 0244
0110
277
558
377
SP 0236
TP0149
SP 0223
0116
276
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
∆Τ
[K]
80
80
80
100
100
100
100
100
100
100
100
100
80
80
80
100
100
100
100
80
Number
of
Cycles
10000
5000
2000
10000
10000
10000
10000
10000
10000
10000
10000
25000
20000
24000
60000
10000
10000
10000
10000
1000
Sample
Size
20
20
10
30
30
24
30
30
30
30
24
24
30
15
30
24
24
24
30
30
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
200000
100000
20000
300000
300000
240000
300000
300000
300000
300000
240000
600000
600000
360000
1800000
240000
240000
240000
300000
30000
Remark
Rdson @ 25000 cycles
TABLE 3B: MOSFET/IGBT Module
#
Part Number
1
2
3
MWI35-12A7
VMM300-03FP/F
VWI6-12P1
Date Code
Tj(max)
or
[°C]
Test #
258
217
433
125
125
125
∆Τ
[K]
80
60
80
Number
of
Cycles
10000
1200000
10000
Sample
Size
10
2
10
Param. Device Cycles
Failures
0
0
0
Remark
100000
2400000
100000
TABLE 3C: Thyristor/Diode Module
#
1
2
3
4
5
6
7
8
9
10
11
Part Number
MCC162-12
MCC162-12
MCC26-14
MCC310-12
MCC56-14io1
MCC95
MDD26-16
MDD56-12
MDD95-12
MDO500-16
VCO180-16io7
Date Code
or
Tj(max)
Test #
[°C]
221
125
221
125
263
125
507
125
375
125
219
125
215
125
532
125
452
125
282
125
526
125
∆Τ
[K]
80
80
80
80
80
80
80
80
80
80
80
Number
of
Cycles
10000
10000
10000
10000
10000
20000
10000
10000
10000
10000
5000
10
Sample Param. Device Cycles
Size
Failures
10
0
100000
10
0
100000
10
0
100000
10
0
100000
10
0
100000
10
1
200000
10
0
100000
10
0
100000
10
0
100000
10
0
100000
10
0
50000
Remark
Rth @ 20000 cycles
TABLE 3D: Controller, Rectifier Bridge
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Part Number
Date Code
or
Tj(max)
[°C]
Test #
VHF28-14
VHF28-16io5
VHF55-08IO7
VUB120
VUB60-12NO1"C"
VUO110-16NO7
VUO110-16NO7
VUO25-16NO8
VUO28-12NO7
VUO28-12NO7
VUO34-16
VUO52-18N01
VUO80-16
VVZ40-12
457
404
224
366
341
565
565
434
241
241
516
242
374
207
125
125
125
125
125
125
125
125
125
125
125
125
125
125
∆Τ
[K]
80
80
80
80
80
80
80
80
80
80
80
40
80
80
Number
of
Cycles
5000
10000
2000
50000
1000
8000
2000
2000
18000
2000
5000
5000
5000
5000
Sample
Size
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Remark
50000
100000
20000
500000
10000
80000
20000
20000
180000
20000
50000
50000
50000
50000
TABLE 3E: FRED
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Part Number
DSEC59-06BC
DSEE15-12CC
DSEI120-06A
DSEI2x101-06
DSEI2x121-02A
DSEI2x31-12B
DSEI2x61-02A
DSEP12-12A
DSEP29-06A
DSEP29-06B
DSEP30-06BR
DSEP60-12
DSEP8-06B
MEE75-12
MEK350-02
MEK350-02
MEO550-02DA"C"
Date Code
or
Tj(max)
Test #
[°C]
304
125
394
125
554
130
320
125
483
125
280
125
205
125
363
150
468
150
474
150
209
150
236
135
552
150
223
150
485
125
485
125
371
125
∆Τ
[K]
80
80
85
80
80
80
80
105
105
105
40
90
105
105
80
80
80
Number
of
Cycles
10000
10000
4000
2000
2000
5000
5000
2000
4000
2000
5000
2000
4000
5000
10000
10000
5000
Sample
Size
20
20
20
10
10
10
10
20
20
20
20
20
20
10
10
10
10
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Remark
200000
200000
80000
20000
20000
50000
50000
40000
80000
40000
100000
40000
80000
50000
100000
100000
50000
TABLE 3F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
DGS4-025A
DSS20-01AR
DSS2x41-01A
DSS2x41-01A
DSS2x61-0045A
DSSK28-01A
DSSK70-0015B
Date Code
or
Tj(max)
Test #
[°C]
471
145
305
125
409
125
409
125
514
125
513
125
585
113
∆Τ
[K]
100
80
80
80
80
80
80
Number
of
Cycles
4000
10000
5000
5000
5000
2000
2000
11
Sample
Size
20
20
10
10
10
40
20
Param. Device Cycles
Failures
0
0
0
0
0
0
0
80000
200000
50000
50000
50000
80000
40000
Remark
TABLE 3G: Thyristor/Diode discrete device
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
CS29-12io1C
CS45-16io1R
CS45-16io1R
CS8-12io2
DS1-12D
DSA1-16
DSA1-16
DSA17-16A
DSA17-18A
DSA2-18
DSA35-18
DSP25-16A
DSP25-16AR
Date Code
or
Tj(max)
Test #
[°C]
306
125
270
125
464
125
210
125
470
150
245
125
245
125
534
125
259
136
342
150
407
150
285
150
318
125
∆Τ
[K]
80
80
80
80
125
100
100
80
85
125
105
105
80
Number
of
Cycles
10000
5000
5000
2000
20000
8000
2000
2000
2000
2000
2000
2000
5000
Sample
Size
20
20
20
10
20
20
20
10
10
20
10
20
20
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
Remark
200000
100000
100000
20000
400000
160000
40000
20000
20000
40000
20000
40000
100000
TABLE 3H: ISOPLUS
#
Part Number
1
2
3
4
5
6
7
8
CS29-12io1C
CS45-16io1R
CS45-16io1R
DSEC59-06BC
DSEE15-12CC
DSEP30-06BR
DSP25-16AR
DSS20-01AR
Date Code
or
Tj(max)
Test #
[°C]
306
125
270
125
464
125
304
125
394
125
209
150
318
125
305
125
∆Τ
[K]
80
80
80
80
80
40
80
80
Number
of
Cycles
10000
5000
5000
10000
10000
5000
5000
10000
Sample
Size
20
20
20
20
20
20
20
20
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
Remark
200000
100000
100000
200000
200000
100000
100000
200000
TEMPERATURE CYCLE (Tables 4A ..4J)
TABLE 4A: MOSFET/IGBT discrete device
#
Part Number
1
FII50-12E
IXBH9N140G
IXDH20N120D1
IXDH20N120D1
IXDN75N120
IXFF24N100
IXFF24N100
IXFF24N100
IXFH26N50
IXFH26N50
IXFH26N50
IXFH32N50
IXFH32N50
IXFH32N50
IXFH32N50Q
IXFH58N20
IXFH58N20
IXFH58N20
IXFN26N50
IXFN26N50
IXFN55N50
IXFN55N50
IXFN55N50
IXFN55N50
IXKN40N60C
IXTN36N50
IXTN36N50
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Date Code
or
Test #
Low
Temp.
[°C]
High
Temp.
[°C]
309
542
237
420
269
315
389
389
0116
0119
0119
0117
0119
0119
0120
0116
0119
0119
368
369
194
194
194
194
267
200
200
-55
-55
-40
-55
-40
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-40
-55
-40
-55
-40
-40
-40
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
100
50
50
20
10
100
50
50
250
250
250
250
250
250
250
250
250
250
250
250
100
50
100
50
10
20
20
12
Sample
Size
20
20
20
20
10
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
15
15
15
15
10
10
10
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2000
1000
1000
400
100
2000
1000
1000
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
7500
1500
750
1500
750
100
200
200
Remark
TABLE 4B: MOSFET/IGBT Module
#
1
2
3
4
5
6
7
8
9
10
Part Number
MUBW25-12A7
MUBW30-06A7
MUBW35-12A8
MWI30-06
MWI30-06A7
VMM45-02
VMM85-02
VMM85-02
VMM90-09F
VWI6-12P1
Date Code
or
Test #
Low
Temp.
[°C]
Temp.
[°C]
High
496
391
328
264
553
311
247
330
425
433
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
150
150
150
125
150
150
150
125
150
150
Date Code
or
Test #
Low
Temp.
[°C]
Temp.
[°C]
0227
244
495
347
495
469
0227
405
386
265
319
319
284
211
495
517
637
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Date Code
or
Test #
Low
Temp.
[°C]
High
Temp.
[°C]
348
0202
0211
361
364
353
404
197
462
531
366
587
0232
586
480
225
427
617
565
415
593
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
150
150
150
150
150
150
125
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
50
100
50
50
50
10
100
50
20
Sample
Size
10
10
10
10
10
10
10
10
10
10
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
Remark
500
500
1000
500
500
500
100
1000
500
200
TABLE 4C: Thyristor/Diode Module
#
Part Number
1
2
MCC162
MCC220-12
MCC26
MCC310-14io1
MCC44
MCC44-12
MCC56
MCC56-14
MCC72-16
MCC95-12io1
MCC95-12io1
MCC95-12io1
MCD250-18
MCD95-12io1
MDD56
MDD56-16
MDD95-08
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
High
Number
of
Cycles
50
50
500
50
500
50
250
50
50
50
50
50
50
50
500
50
50
Sample
Size
12
10
12
10
20
10
20
10
10
10
10
10
10
10
20
10
10
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Remark
600
500
6000
500
10000
500
5000
500
500
500
500
500
500
500
10000
500
500
TABLE 4D: Controller, Rectifier Bridge
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Part Number
MLO75-12
MMO75
MMO75
VBH40-05
VBO40-16NO6
VBO50-16NO7
VHF20-16io5
VHF28-08
VHF36-16
VHFD29-16
VUB120
VUB120
VUB120
VUB71
VUB72/16NO1
VUE22-12NO7
VUE35-06NO7
VUO110
VUO110-16NO7
VVY40-16
VVZ40-16
Number
of
Cycles
50
100
50
10
10
10
100
50
50
50
20
50
20
50
50
10
10
20
10
50
50
13
Sample
Size
10
10
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
10
10
10
Param. Device Cycles
Failures
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
500
1000
1000
100
100
100
1000
500
500
500
200
500
200
500
500
100
100
100
100
500
500
Remark
Vt @ 50 cycles
TABLE 4E: FRED
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Part Number
Date Code
or
Test #
Low
Temp.
[°C]
Temp.
[°C]
484
304
322
600
303
554
320
483
205
296
208
465
363
616
616
381
468
474
575
373
525
308
216
384
384
227
438
257
-55
-55
-55
-55
-55
-40
-40
-40
-40
-40
-40
-40
-55
-55
-55
-55
-55
-55
-40
-40
-55
-55
25
-40
-40
-40
-40
-40
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
125
150
150
150
150
150
Date Code
or
Test #
Low
Temp.
[°C]
Temp.
[°C]
332
583
518
305
326
430
458
514
513
442
442
442
202
255
255
585
489
-55
-55
-55
-55
-40
-40
-40
-40
-55
-40
-55
-55
-55
-55
-55
-55
-55
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
DSEC30-06A
DSEC59-06BC
DSEC60-03A
DSEC60-03AR
DSEE15-12CC
DSEI120-06A
DSEI2x101-06
DSEI2x121-02A
DSEI2x61-02A
DSEI60-06A
DSEI8-06A
DSEK60-02
DSEP12-12A
DSEP130-06A
DSEP130-06A
DSEP15-12CR
DSEP29-06A
DSEP29-06B
DSEP2x31-12A
DSEP2x61-12A
DSEP30-06CR
DSEP30-12A
DSEP30-12A
MEK250-12
MEK250-12
MEK300-06DA "E"
MEO450-12I
MEO550-02C
High
Number
of
Cycles
50
50
20
20
50
350
10
10
10
50
20
20
20
50
50
20
50
20
10
10
20
20
20
50
50
50
50
50
Sample
Size
29
20
20
20
20
20
10
10
10
20
45
20
20
20
20
20
20
20
10
10
20
20
20
10
10
10
10
10
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Remark
1450
1000
400
400
1000
7000
100
100
100
1000
900
400
400
1000
1000
400
1000
400
100
100
400
400
400
500
500
500
500
500
TABLE 4F: Schottky Diode
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Part Number
DGS10-018AS
DGS19-025AS
DGSK20-018A
DSS20-01AR
DSS2x111-008A
DSS2x160-01A
DSS2x200-0008D
DSS2x61-0045A
DSSK28-01A
DSSK28-01AS
DSSK28-01AS
DSSK28-01AS
DSSK60-0045A
DSSK60-015A
DSSK60-015A
DSSK70-0015B
DSSK80-0008D
High
Number
of
Cycles
20
200
20
50
50
10
100
10
20
20
120
20
50
50
50
20
50
14
Sample
Size
20
20
20
20
10
10
10
10
20
20
20
20
20
20
20
20
20
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
1
400
4000
400
1000
500
100
1000
100
400
400
2400
400
1000
1000
1000
400
1000
Remark
Ir @ 50 cycles
Vf @ 50 cycles
TABLE 4G: Thyristor/Diode discrete device
Date Code Low
Temp.
# Part Number
or
[°C]
Test #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
CS19-08ho1S
CS23-12io2
CS29-12io1C
CS30-16io1
CS30-16io1
CS30-16io1
CS30-16io1
CS35-14io4
CS45-16io1R
CS8-12io2
DSA1-18D
DSA17-16A
DSA17-18A
DSAI35-18
DSAI75-18B
DSI30-08AC
DSIK45-16AR
DSP25-16A
DSP25-16A
DSP25-16AR
High
Temp.
[°C]
338
504
306
556
556
382
213
365
270
210
290
534
259
344
439
307
608
212
295
318
-40
-40
-40
-40
-40
-55
-40
-40
-40
-40
-40
-40
-40
-40
-40
-55
-40
-40
-40
-40
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Date Code
or
Test #
Low
Temp.
[°C]
Temp.
[°C]
306
270
304
600
303
465
381
525
307
608
318
305
389
389
-40
-40
-55
-55
-55
-40
-55
-55
-55
-40
-40
-55
-55
-55
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Date Code
or
Test #
Low
Temp.
[°C]
High
Temp.
[°C]
521
453
453
597
261
550
550
612
343
597
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
20
50
350
350
50
50
20
20
20
20
20
20
20
20
50
100
50
50
20
Sample
Size
20
10
20
20
20
20
40
10
20
10
20
10
10
10
10
20
20
20
20
20
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Remark
1000
200
1000
7000
7000
1000
2000
200
400
200
400
200
200
200
200
1000
2000
1000
1000
400
TABLE 4H: ISOPLUS
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Part Number
CS29-12io1C
CS45-16io1R
DSEC59-06BC
DSEC60-03AR
DSEE15-12CC
DSEK60-02
DSEP15-12CR
DSEP30-06CR
DSI30-08AC
DSIK45-16AR
DSP25-16AR
DSS20-01AR
IXFF24N100
IXFF24N100
High
Number
of
Cycles
50
20
50
20
50
20
20
20
50
100
20
50
50
50
Sample
Size
20
20
20
20
20
20
20
20
20
20
20
20
20
20
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Remark
1000
400
1000
400
1000
400
400
400
1000
2000
400
1000
1000
1000
TABLE 4J: Breakover Diode
#
1
2
3
4
5
6
7
8
9
10
Part Number
IXBOD1-06
IXBOD1-07
IXBOD1-07
IXBOD1-07
IXBOD1-08
IXBOD1-08
IXBOD1-08
IXBOD1-08
IXBOD1-09
IXBOD1-09
Number
of
Cycles
20
30
20
50
20
200
200
200
20
50
15
Sample
Size
20
20
20
10
20
20
20
20
20
10
Param. Device Cycles
Failures
0
0
0
0
0
0
0
0
0
0
400
600
400
500
400
4000
4000
4000
400
500
Remark
HUMIDITY TEST (Tables 5A ..5H)
TABLE 5A: MOSFET/IGBT discrete device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 IXBH9N160G
440
121
2 IXDN75N120
482
121
3 IXEH40N120
539
121
4 IXFC26N50Q
SP 0235
125
5 IXFF24N100
389
121
6 IXFF24N100
389
121
7 IXFF55N50
SP 0207
125
8 IXFH26N50
0116
125
9 IXFH26N50
0119
125
10 IXFH26N50
0119
125
11 IXFH32N50
0117
125
12 IXFH32N50
0119
125
13 IXFH32N50
0119
125
14 IXFH32N50Q
0120
125
15 IXFH58N20
0116
125
16 IXFH58N20
0119
125
17 IXFH58N20
0119
125
18 IXFN26N50
368
121
19 IXFN55N50
194
125
20 IXFN55N50
194
125
21 IXFN80N50
276
125
22 IXTN 36N50
199
125
TABLE 5B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1
MUBW35-12A8
328
TABLE 5C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC132-14
589
2 MCC250-14
387
3 MCC44-12
336
4 MCC95-16
240
5 MCC95-16
240
6 MCD56-12io1
414
VHF28-08
VTO175-16io7
VUB120
VUB60-12NO1"C"
VUE22-12NO7
VUO160-18No7
VUO36-16NO8
VWO140-14
229
444
412
341
225
444
435
431
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
Temp.
[°C]
Rel. H.
[%]
85
85
Temp.
[°C]
Rel. H.
[%]
85
85
85
85
110
85
85
85
85
85
85
85
TABLE 5D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Temp.
Test #
[°C]
1
2
3
4
5
6
7
8
Rel. H.
[%]
85
45
85
85
85
45
85
85
Rel. H.
[%]
85
65
85
85
85
65
85
85
Time
[hrs]
Sample
Size
96
48
96
168
96
96
168
168
168
168
168
168
168
96
168
168
168
168
168
168
168
96
Time
[hrs]
20
20
20
30
20
20
30
30
30
30
30
30
30
30
30
30
30
30
14
15
30
20
Sample
Size
168
Time
[hrs]
10
Sample
Size
168
168
168
1000
96
168
Time
[hrs]
10
10
10
10
10
10
Sample
Size
168
72
168
100
168
72
168
168
16
10
16
10
10
10
16
10
10
Param.
Failures
0
0
0
0
1
1
0
1
0
0
1
0
0
0
0
0
0
1
0
0
0
0
Param.
Failures
0
Param.
Failures
0
0
0
0
0
0
Param.
Failures
0
0
0
0
0
0
0
0
Device Hours
[hrs]
1920
960
1920
5040
1920
1920
5040
5040
5040
5040
5040
5040
5040
2880
5040
5040
5040
5040
2352
2520
5040
1920
Device Hours
[hrs]
Remark
Idss @ 96 hrs
Idss @ 96 hrs
Igss @ 168 hrs
Igss @ 168 hrs
Igss @ 168 hrs
Remark
1680
Device Hours
[hrs]
Remark
1680
1680
1680
10000
960
1680
Device Hours
[hrs]
1680
1152
1680
1000
1680
1152
1680
1680
Remark
TABLE 5E: FRED
#
1
2
3
4
5
6
7
8
9
10
11
12
Part Number
DSEC59-06BC
DSEC60-03A
DSEE15-12CC
DSEI2x101-06
DSEI2x61-06C
DSEI60-06A
DSEP130-06A
DSEP130-06A
DSEP30-06BR
DSEP30-06CR
MEK250/12DA
MEK300-06D
Date Code
or
Test #
Temp.
[°C]
Rel. H.
[%]
304
322
303
413
260
296
616
616
209
525
429
399
121
121
121
121
125
125
121
121
125
121
85
85
100
100
100
100
100
100
100
100
100
100
85
85
Date Code
or
Test #
Temp.
[°C]
Rel. H.
[%]
332
121
100
Time
[hrs]
Sample
Size
168
48
168
48
96
168
96
96
96
48
168
168
20
20
20
10
20
20
20
20
20
20
10
10
Param.
Failures
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
Remark
3360
960
3360
480
1920
3360
1920
1920
1920
960
1680
1680
TABLE 5F: Schottky Diode
#
Part Number
1
DGS10-018AS
TABLE 5G: Thyristor/Diode discrete device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1
2
3
4
5
6
7
CS29-12io1C
CS30-16io1
CS30-16io1
CS45-16io1R
DSI30-08AC
DSP25-16A
DSP25-16A
Rel. H.
[%]
306
382
417
270
307
327
388
121
121
121
125
121
121
121
100
100
100
100
100
100
100
Date Code
or
Test #
Temp.
[°C]
Rel. H.
[%]
306
270
304
304
303
303
209
525
307
SP 0235
389
389
SP 0207
121
125
121
121
121
121
125
121
121
125
121
121
125
100
100
100
100
100
100
100
100
100
100
100
100
100
Temp.
[°C]
Rel. H.
[%]
121
121
121
125
100
100
100
100
Time
[hrs]
Sample
Size
48
Time
[hrs]
20
Sample
Size
168
96
48
96
168
432
96
20
20
20
20
29
40
20
Param.
Failures
0
Param.
Failures
0
0
0
0
0
0
0
Device Hours
[hrs]
Remark
960
Device Hours
[hrs]
Remark
3360
1920
960
1920
4872
17280
1920
TABLE 5H: ISOPLUS
#
1
2
3
4
5
6
7
8
9
10
11
12
13
Part Number
CS29-12io1C
CS45-16io1R
DSEC59-06BC
DSEC59-06BC
DSEE15-12CC
DSEE15-12CC
DSEP30-06BR
DSEP30-06CR
DSI30-08AC
IXFC26N50Q
IXFF24N100
IXFF24N100
IXFF55N50
TABLE 5J: Breakover diode
Date Code
# Part Number
or
Test #
1
2
3
4
IXBOD1-06
IXBOD1-07
IXBOD1-09
IXBOD1-15R
567
481
343
228
Time
[hrs]
Sample
Size
168
96
168
168
168
168
96
48
168
168
96
96
168
Time
[hrs]
20
20
20
20
20
20
20
20
29
30
20
20
30
Sample
Size
48
48
48
96
17
20
20
20
20
Param.
Failures
0
0
0
0
0
0
0
0
0
0
1
1
0
Param.
Failures
0
0
0
0
Device Hours
[hrs]
3360
1920
3360
3360
3360
3360
1920
960
4872
5040
1920
1920
5040
Device Hours
[hrs]
960
960
960
1920
Remark
Idss @ 96 hrs
Idss @ 96 hrs
Remark