WILLAS FM120-M+ DTC114EE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. surge capability. • High • Pb-Free package is available • Guardring for overvoltage protection. RoHS •product for packing code suffix ”G” Ultra high-speed switching. Halogen free product forplanar packing suffix “H”junction. epitaxial chip,code metal silicon • Silicon Lead-free parts meet environmental standards of • x Epitaxial Planar Die Construction MIL-STD-19500 /228 Surface Mount Package x Untrl Small • RoHS product for packing code suffix "G" Resistors x Built-In Biasing Halogen free product for packing code suffix "H" • EpoxyMechanical meets UL 94 V-0data flammability rating • Moisure Sensitivity Level 1 • Epoxy : UL94-V0 rated flame retardant x Marking:24 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.146(3.7) 0.130(3.3) SOT-523 Features 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .035(0.90) .028(0.70) .067(1.70) .059(1.50) 1 : IN 2 : GND 3 : OUT 0.040(1.0) 0.024(0.6) 3 2 1 0.031(0.8) Typ. 0.031(0.8) Typ. .014(0.35) .010(0.25) Absolute maximumMethod ratings @ 25к 2026 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 13 14 20 30 40 Maximum Recurrent Peak Reverse Voltage VRRM Symbol Parameter Min Typ Max Unit 14 21 28 Maximum RMS Voltage V RMS --0.5 --V VI(off) Input voltage (VCC=5V, IO=100A) --- VDC --- 20 3.0 30 V VMaximum DC Blocking (V Voltage 40 I(on) O=0.3V, IO=10mA) VO(on) Output voltage (IO=10mA,Ii=0.5mA) ----0.3 V Maximum Average Forward Rectified Current IO II Input current (VI=5V) ----0.88 mA IO(off) Output current (VCC=50V, VI=0) ----0.5 A Peak Forward Surge Current 8.3 ms single half sine-wave GI DC current gain (VO=5V, IO=5mA) 30 IFSM ----superimposed on rated load (JEDEC method) R1 Input resistance 7 10 13 K ¡ Thermal Resistance RTypical Resistance ratio (Note 2) 0.8RΘJA 1.0 0.2 2/R1 Transition frequency(Note 1) Typical Junction Capacitance --- CJ 250 --MHz fT (V2=10V, I2=5mA, f=100MHz) -55 to +125 Operating Temperature Range TJ Storage Temperature Range 15 50 16 60 35 42 50 60 1.0 30 115 150 120 200 56 70 105 140 150 200 .008(0.20) 80 100 .004(0.10) 120 -55 to +150 - 65 to +175 TSTG .014(0.35) .006(0.15) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 10 100 .004(0.10)MAX.40 CHARACTERISTICS 18 80 .035(0.90) .028(0.70) Marking Code Electrical Characteristics @ 25к Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .069(1.75) .057(1.45) .004(0.10)MIN. .043(1.10) Symbol • Polarity : Indicated Parameter Typ Max Unit Dimensions in inches and (millimeters) by cathode band Min --V Supply Voltage --50 VCC .035(0.90) Mounting Position : Any •Collector IC current --50 100 mA 40 V VIN Input voltage -10 --• Weight : Approximated 0.011 gram Pd Power dissipation --150 --mW Tj Junction temperature --150 --ć MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tstg Storage temperature -55 --150 ć Ratings at 25℃ ambient temperature unless otherwise specified. @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 Dimensions10 in inches and (millimeters) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M DTC114EE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers 100 Characteristics better reverseON leakage current and thermal resistance. OFF Characteristics SOD-123H 10 V =0.3V order to • Low profile surface mounted application in VCC=5V O INPUT VOLTAGE 3 1 0.3 Mechanical data (mA) 0.146(3.7) 0.130(3.3) 25℃ 3 0.012(0.3) Typ. 1 IO VI(ON) 10 Ta=100℃ OUTPUT CURRENT (V) 30 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. =25℃ chip, metal silicon junction. • Silicon epitaxialTaplanar 100℃ environmental standards of • Lead-free parts meet MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) 0.3 0.1 0.03 • Epoxy : UL94-V0 rated flame retardant 0.1 • Case : Molded plastic, SOD-123H 0.1 1 10 100 3 30 0.3 , • Terminals :Plated terminals,I solderable per MIL-STD-750 OUTPUT CURRENT (mA) 0.040(1.0) 0.024(0.6) 0.01 0.0 0.031(0.8) Typ. 0.4 O 0.8 1.2 INPUT VOLTAGE VI(OFF) 0.031(0.8) Typ. 2.0 1.6 (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) : Any—— IO • Mounting Position • Weight : Approximated 0.011 gram 1 Dimensions in inches and (millimeters) GI 1000 IO/II=20 —— IO VO=5V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 25℃ Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 0.03 Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak 0.01Forward Surge Current 8.3 ms single half sine-wave 10 superimposed on rated load (JEDEC method) OUTPUT CURRENT IO Typical Thermal Resistance (Note 2) 30 (mA) IO IFSM CJ Operating Temperature Range Storage Temperature RangeCO TJ —— 10 VR (pF) 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 1 0.1 0.3 1.0 30 3 1 OUTPUT CURRENT 40 120 -55 to +125 10 IO 30 (mA) 100 -55 to +150 PD - —— Ta 65 to +175 400 VF @T A=125℃ CO 10 100 30 0.50 IR 6 300 250 POWER DISSIPATION NOTES: OUTPUT CAPACITANCE 18 80 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH 350 Maximum Average Reverse Current at @T A=25℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 16 60 f=1MHz Ta=25℃ CHARACTERISTICS Rated DC Blocking Voltage 10 15 50 21 100 TSTG Maximum Forward Voltage at 1.0A DC 8 14 40 3 RΘJA Typical Junction Capacitance (Note 1) 30 13 30 (mW) 3 GI SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code 1 DC CURRENT GAIN RATINGS 0.1 100 PD OUTPUT VOLTAGE VO(ON) (V) Ratings at 25℃ ambient temperature unless otherwise specified. 0.3 Single phase half wave, 60Hz, resistive of inductive load. Ta=100℃ For capacitive load, derate current by 20% 25℃ Ta=100℃ 2- Thermal Resistance From Junction to Ambient 4 2 0.70 0.9 0.85 0.5 0.92 10 200 DTC114EE 150 100 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 100 125 150 T (℃) ELECTRONIC COR WILLAS AMBIENT TEMPERATURE a WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114EE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produ SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) loss, high efficiency. • Low powerDevice PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) (2) DTC114EE –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical RΘJA Thermal Resistance (Note 2) 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.