DTC114YE(SOT 523)

WILLAS
FM120-M+
DTC114YE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Features
better reverse leakage current and thermal resistance.
Pb-Free package is available
• Low profile surface mounted application in order to
RoHS product
for packing
optimize board
space. code suffix ”G”
power
loss, high
efficiency.code suffix “H”
• Low
Halogen
free
product
for packing
High current
capability,
low forwardrating
voltage drop.
Epoxy• meets
UL 94
V-0 flammability
High surge capability.
•
Moisure Sensitivity Level 1
for overvoltage
Built-in• Guardring
bias resistors
enable theprotection.
configuration of an inverter circuit
Ultra
high-speed
switching.
•
without connecting external
input resistors
epitaxial planar chip, metal silicon junction.
• Silicon
The bias
resistors
consist of thin-film resistors with complete
meet environmental standards of
• Lead-free
isolation
to allow parts
negative
biasing of the input. They also have the
MIL-STD-19500 /228
advantage
of
almost
completely
suffix "G" parasitic effects.
• RoHS product for packing codeeliminating
Only theHalogen
on/off free
conditions
need
to
setsuffix
for "H"
operation, making
product for packingbe
code
deviceMechanical
design easy
data
.043(1.10)
.035(0.90)
0.031(0.8) Typ.
•
•
• Weight
: Approximated 0.011 gram
Power dissipation
Junction temperature
StorageMAXIMUM
temperature RATINGS
AND
0.024(0.6)
ry
Min
---6
0.031(0.8) Typ.
Typ
Max
Unit
50
--V
Dimensions in inches and (millimeters)
--40
V
70
----mA
100
--150
--mW
ć
--150
--ELECTRICAL
CHARACTERISTICS
-55
--150
ć
im
ina
Parameter
Method
2026
Supply voltage
Polarity : Indicated by cathode band
Input voltage
Mounting
Position : Any
Output current
0.056(1.4)
.014(0.35)
.010(0.25)
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
Absolute• maximum
ratings
@ 25к
Terminals :Plated
terminals,
solderable per MIL-STD-750
Symbol
VCC
VIN
IO
IC(MAX)
Pd
Tj
Tstg
.067(1.70)
.059(1.50)
0.071(1.8)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.008(0.20)
FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Pr
el
RATINGS
Electrical
Characteristics @ 25к
Marking Code
12
13
Maximum Recurrent Peak
Reverse Voltage
VRRM Typ 20 Max 30Unit
Symbol
Parameter
Min
0.3VRMS --- 14 --VMaximum
Input
voltage (VCC=5V, IO=100­A)
I(off)
21 V
RMS Voltage
--V
VI(on)
--(VO=0.3V, IO=1mA)
1.4
Maximum DC Blocking Voltage
20
30
VO(on)
---VDC 0.1
0.3
V
Output voltage (I=
O/II 5mA/0.25mA)
II =
Input
current
(VI 5V)
--- IO --0.88
mA
Maximum
Average
Forward
Rectified Current
I
­A
Output current (VCC
=
=50V, VI 0)
--- --0.5
O(off)
Peak
Current
8.3O=5V,
ms =
single
half sine-wave 68
GI Forward
DCSurge
current
gain (V
IO 5mA)
--IFSM --R1
Input
7.0
10
superimposed
onresistance
rated load (JEDEC method)
K¡
13
RTypical
Resistance
ratio (Note 2)
3.7RΘJA 4.7
5.7
2/R1
Thermal
Resistance
Transition frequency
MHz
fT
--- CJ 250
--Typical
Junction
Capacitance
(Note 1)
(VO=10V,
IO=5mA, f=100MHz)
-55
to
+125
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
CHARACTERISTICS
15
50
.004(0.10)
18
10
16
60
80
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
.004(0.10)MAX.
1.0
30
.014(0.35)
40 .006(0.15)
120
-55 to +150
- 65 to +175
Dimensions in inches and (millimeters)
Maximum Forward Voltage at 1.0A DC
14
40
.035(0.90)
.028(0.70)
•
0.012(0.3) Typ.
.069(1.75)
.057(1.45)
•
0.146(3.7)
0.130(3.3)
.035(0.90)
.028(0.70)
•
•
•
SOD-123H
SOT-523
.004(0.10)MIN.
•
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage*Marking: @T
64 A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
NPN Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
FM120-M+
DTC114YE THRU
FM1200-M+
Pb Free Product
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application
in order to
• Low profileInformation:
Ordering
optimize board space.
0.146(3.7)
Device PN Packing high efficiency.
• Low power loss,
0.130(3.3)
(1)
(2)
capability, low
• High current
DTC114YE –T
G forward
‐WS voltage drop.
Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
high-speed
switching.
• Ultra
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
• Lead-free
parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
Mechanical data
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
which may be included on WILLAS data sheets and/ or specifications can V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
V
Maximum
DC
Blocking
Voltage
20
30
40
50
60
80
100
150
200
V
DC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Marking Code
Pr
el
im
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratingsspecification herein, to make corrections, modifications, enhancements or other at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
load, derate current by 20%
Operating Temperature Range
TJ
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
or indirectly cause injury or threaten a life without expressed written approval VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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