DTC144TE(SOT 523)

WILLAS
FM120-M
DTC144TE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-523
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Pb-Free package is available
• Guardring for overvoltage protection.
RoHS product
for packing
code suffix ”G”
switching.
• Ultra high-speed
Silicon
epitaxial
planar
chip, code
metal silicon
•
Halogen free product for packing
suffix junction.
“H”
Lead-free parts meet environmental standards of
•
Epoxy meets UL 94 V-0 flammability rating
0.146(3.7)
0.130(3.3)
Features
MIL-STD-19500 /228
Moisure• RoHS
Sensitivity
1 code suffix "G"
productLevel
for packing
Built-in bias
resistors
enable
configuration
of an inverter circuit
Halogen free product for the
packing
code suffix "H"
without Mechanical
connecting external
input
resistors
(see
equivalent circuit)
data
The bias resistors consist of thin-film resistors with complete
: UL94-V0
rated
flameof
retardant
isolation• Epoxy
to allow
negative
biasing
the input. They also have the
: Moldedcompletely
plastic, SOD-123H
• Case
advantage
of almost
eliminating parasitic effects
,
Only the• Terminals
on/off conditions
need to be
set for operation,
making
:Plated terminals,
solderable
per MIL-STD-750
device design easyMethod 2026
x
0.040(1.0)
.014(0.35)0.024(0.6)
.010(0.25) 0.031(0.8) Typ.
0.031(0.8) Typ.
.043(1.10)
.035(0.90)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Absolute Maximum Ratings
Parameter
SymbolAND ELECTRICAL
Value
Unit
MAXIMUM RATINGS
CHARACTERISTICS
.069(1.75)
.057(1.45)
x
.004(0.10)MIN.
•
•
x
0.071(1.8)
.067(1.70)
0.056(1.4)
.059(1.50)
.035(0.90)
.028(0.70)
•
0.012(0.3) Typ.
Collector-Base Voltage
V
CBO
Ratings at 25℃ ambient temperatureVunless
otherwise50
specified.
Collector-Emitter Voltage
VCEO
50
V
Single phase half wave, 60Hz, resistive of inductive load.
Emitter-Base voltage
VEBO
5
V
capacitive load, derate current by 20%
ForCurrent-Continuous
Collector
IC
100
mA
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL
RATINGS
Collector Dissipation
PC
150 FM120-MH FM130-MH
mW
Marking Code
Junction Temperature
TJ
Maximum Recurrent Peak Reverse Voltage
Storage Temperature Range
TSTG
Maximum RMS Voltage
150
VRRM
-55~150
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
Electrical
Characteristics
Peak Forward
Surge Current 8.3 ms single half sine-wave
Symsuperimposed on ratedParameter
load (JEDEC method)
Min
Typ
12
20
14
40
14
13
к
30
к
21
28
35
42
20
30
40
50
60
Max
Unit
15
50
16
60
18
10
100
115
150
120
200
56
70
105
140
80
100
150
200
.008(0.20)
80
.004(0.10)
1.0
.004(0.10)MAX.
30
.035(0.90)
.028(0.70)
Collector-Base Breakdown Voltage
V
50 RΘJA ----V(BR)CBO
40
Typical Thermal
(Note 2)
IE=0)
(IC=50uA,Resistance
120
.014(0.35)
Typical Junction
Capacitance
(Note 1)Voltage
CJ
Collector-Emitter
Breakdown
50
----V
V(BR)CEO
-55 to +125
(IC=1mA,
IB=0) Range
-55 to +150
Operating
Temperature
TJ
.006(0.15)
Emitter-Base Breakdown Voltage
65
to
+175
Storage Temperature Range
5 TSTG ----V
V(BR)EBO
(IE=50uA, IC=0)
Collector Cut-off Current
----0.5
uA
ICBO
FM160-MH
FM180-MH
FM1150-MH FM1200-M
=0)
(VCB=50V, IECHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
Dimensions
in inches
andFM1100-MH
(millimeters)
Emitter
Cut-off
Current
0.9
Maximum
Forward
Voltage
at
1.0A
DC
0.92
V
F
0.50
0.70
0.85
IEBO
----0.5
uA
(VEB=4V, IC=0)
0.5
Maximum
DCAverage
CurrentReverse
Gain Current at @T A=25℃
100 IR 300
600
--hFE
10
@T A=125℃
Rated DC
Blocking
Voltage
=5V, IC=1mA)
(VCE
Collector-Emitter Saturation Voltage
----0.3
V
VCE(sat)
NOTES: (IC=5mA, I B =0.5 mA)
K¡
R1Input
32.9
47
61.1
1 Measured
atresistance
1 MHZ and applied reverse voltage of 4.0
VDC.
Transition Frequency
--250
--MHz
fT2- Thermal Resistance From Junction to Ambient
(VCE=10V, IE=-5mA, f=100MHz)
*Marking: 06
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144TE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Static Characteristic
• High surge capability.
• Guardring for overvoltage protection. COMMON
EMITTER
• Ultra high-speed switching.
10uA
T =25℃
junction.
• Silicon epitaxial planar chip, metal silicon
9uA
standards of
• Lead-free parts meet environmental
5
Mechanical data
2
IC
0.071(1.8)
0.056(1.4)
5uA
100
0.040(1.0)
0.024(0.6)
• Polarity : Indicated
by cathode
band6
2
4
COLLECTOR-EMITTER VOLTAGE V
• Mounting Position : Any
• Weight : Approximated 0.011 gram
VCEsat
0.031(0.8) Typ.
0.031(0.8) Typ.
COMMON EMITTER
VCE= 5V
IB=1uA
CE
——
10
0.1
8
Dimensions
in inches 10
and (millimeters)
1
COLLECTOR CURRENT
(V)
IC
IC
RATINGS
VBE
10
100
12
20
VRMS
14
Maximum DC Blocking Voltage Ta=100 ℃
VDC
20
Maximum Average Forward Rectified Current
IO
β=10
IFSM
Maximum RMS Voltage
Ta=25℃
Peak Forward Surge Current 8.3 ms single half sine-wave
on rated load 1(JEDEC method)
COLLECTOR CURREMT
Typical Thermal Resistance (Note 2)
10
IC
100
(mA)
15
50
120
200
28
35
42
56
70
105
140
50
60
80
100
150
200
1.0
30
0.1
0.1
1
COMMON EMITTER
VCE=5V
10
100
BASE-EMMITER VOLTAGE VBE (V)
PD
350
40
120
—— Ta
-55 to +150
- 65 to +175
300
Ta=25 ℃
POWER DISSIPATION
PD (mW)
(pF)
VF
C
Maximum Average Reverse Current
at @T A=25℃
C
@T A=125℃
1
115
150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
ob
10
100
40
IE=0
CHARACTERISTICS
18
80
30
f=1MHz
TSTG
16
60
21 1
-55 to +125
TJ
Storage Temperature Range
14
40
RΘJA
CJ
Typical Junction Capacitance (Note 1)
Cob —— VCB
Operating
Temperature Range
10
13
30
T =2
5℃
a
VRRM
T =1
00℃
a
Maximum Recurrent Peak Reverse Voltage
Rated DC Blocking Voltage
100
(mA)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
10
0.1
superimposed
IC
Ratings at 25℃ ambient temperature unless otherwise specified.
1000 phase half wave, 60Hz, resistive of inductive load.
Single
For capacitive load, derate current by 20%
——
IC
(mA)
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
3000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
Ta=25℃
• Epoxy : UL94-V0 rated flame retardant
4uA
3uA
• Case : Molded plastic, SOD-123H
,
2uA MIL-STD-750
• Terminals :Plated terminals, solderable per
1
CAPACITANCE
hFE
8uA
MIL-STD-19500 /228
RoHS product for packing code7uA
suffix "G"
Halogen free product for packing code
6uA suffix "H"
DC CURRENT GAIN
•
3
0
250
IR
0.50
0.70
150
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.9
0.85
0.92
0.5
200
NOTES:
——
Ta=100℃
COLLECTOR CURRENT
(mA)
COLLECTOR CURRENT
IC
4
0
hFE
1000
0.012(0.3) Typ.
a
Method 2026
0.146(3.7)
0.130(3.3)
10
DTC144TE
100
2- Thermal Resistance From Junction to Ambient
50
0
0.1
0
10
20
REVERSE VOLTAGE
2012-06
2012-0
30
V
(V)
40
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144TE THRU
NPN
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• HighDTC144TE –T
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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