WILLAS FM120-M DTC144TE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-523 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Pb-Free package is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” switching. • Ultra high-speed Silicon epitaxial planar chip, code metal silicon • Halogen free product for packing suffix junction. “H” Lead-free parts meet environmental standards of • Epoxy meets UL 94 V-0 flammability rating 0.146(3.7) 0.130(3.3) Features MIL-STD-19500 /228 Moisure• RoHS Sensitivity 1 code suffix "G" productLevel for packing Built-in bias resistors enable configuration of an inverter circuit Halogen free product for the packing code suffix "H" without Mechanical connecting external input resistors (see equivalent circuit) data The bias resistors consist of thin-film resistors with complete : UL94-V0 rated flameof retardant isolation• Epoxy to allow negative biasing the input. They also have the : Moldedcompletely plastic, SOD-123H • Case advantage of almost eliminating parasitic effects , Only the• Terminals on/off conditions need to be set for operation, making :Plated terminals, solderable per MIL-STD-750 device design easyMethod 2026 x 0.040(1.0) .014(0.35)0.024(0.6) .010(0.25) 0.031(0.8) Typ. 0.031(0.8) Typ. .043(1.10) .035(0.90) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Absolute Maximum Ratings Parameter SymbolAND ELECTRICAL Value Unit MAXIMUM RATINGS CHARACTERISTICS .069(1.75) .057(1.45) x .004(0.10)MIN. • • x 0.071(1.8) .067(1.70) 0.056(1.4) .059(1.50) .035(0.90) .028(0.70) • 0.012(0.3) Typ. Collector-Base Voltage V CBO Ratings at 25℃ ambient temperatureVunless otherwise50 specified. Collector-Emitter Voltage VCEO 50 V Single phase half wave, 60Hz, resistive of inductive load. Emitter-Base voltage VEBO 5 V capacitive load, derate current by 20% ForCurrent-Continuous Collector IC 100 mA FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL RATINGS Collector Dissipation PC 150 FM120-MH FM130-MH mW Marking Code Junction Temperature TJ Maximum Recurrent Peak Reverse Voltage Storage Temperature Range TSTG Maximum RMS Voltage 150 VRRM -55~150 VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Electrical Characteristics Peak Forward Surge Current 8.3 ms single half sine-wave Symsuperimposed on ratedParameter load (JEDEC method) Min Typ 12 20 14 40 14 13 к 30 к 21 28 35 42 20 30 40 50 60 Max Unit 15 50 16 60 18 10 100 115 150 120 200 56 70 105 140 80 100 150 200 .008(0.20) 80 .004(0.10) 1.0 .004(0.10)MAX. 30 .035(0.90) .028(0.70) Collector-Base Breakdown Voltage V 50 RΘJA ----V(BR)CBO 40 Typical Thermal (Note 2) IE=0) (IC=50uA,Resistance 120 .014(0.35) Typical Junction Capacitance (Note 1)Voltage CJ Collector-Emitter Breakdown 50 ----V V(BR)CEO -55 to +125 (IC=1mA, IB=0) Range -55 to +150 Operating Temperature TJ .006(0.15) Emitter-Base Breakdown Voltage 65 to +175 Storage Temperature Range 5 TSTG ----V V(BR)EBO (IE=50uA, IC=0) Collector Cut-off Current ----0.5 uA ICBO FM160-MH FM180-MH FM1150-MH FM1200-M =0) (VCB=50V, IECHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Dimensions in inches andFM1100-MH (millimeters) Emitter Cut-off Current 0.9 Maximum Forward Voltage at 1.0A DC 0.92 V F 0.50 0.70 0.85 IEBO ----0.5 uA (VEB=4V, IC=0) 0.5 Maximum DCAverage CurrentReverse Gain Current at @T A=25℃ 100 IR 300 600 --hFE 10 @T A=125℃ Rated DC Blocking Voltage =5V, IC=1mA) (VCE Collector-Emitter Saturation Voltage ----0.3 V VCE(sat) NOTES: (IC=5mA, I B =0.5 mA) K¡ R1Input 32.9 47 61.1 1 Measured atresistance 1 MHZ and applied reverse voltage of 4.0 VDC. Transition Frequency --250 --MHz fT2- Thermal Resistance From Junction to Ambient (VCE=10V, IE=-5mA, f=100MHz) *Marking: 06 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144TE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Typical Characteristics • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. Static Characteristic • High surge capability. • Guardring for overvoltage protection. COMMON EMITTER • Ultra high-speed switching. 10uA T =25℃ junction. • Silicon epitaxial planar chip, metal silicon 9uA standards of • Lead-free parts meet environmental 5 Mechanical data 2 IC 0.071(1.8) 0.056(1.4) 5uA 100 0.040(1.0) 0.024(0.6) • Polarity : Indicated by cathode band6 2 4 COLLECTOR-EMITTER VOLTAGE V • Mounting Position : Any • Weight : Approximated 0.011 gram VCEsat 0.031(0.8) Typ. 0.031(0.8) Typ. COMMON EMITTER VCE= 5V IB=1uA CE —— 10 0.1 8 Dimensions in inches 10 and (millimeters) 1 COLLECTOR CURRENT (V) IC IC RATINGS VBE 10 100 12 20 VRMS 14 Maximum DC Blocking Voltage Ta=100 ℃ VDC 20 Maximum Average Forward Rectified Current IO β=10 IFSM Maximum RMS Voltage Ta=25℃ Peak Forward Surge Current 8.3 ms single half sine-wave on rated load 1(JEDEC method) COLLECTOR CURREMT Typical Thermal Resistance (Note 2) 10 IC 100 (mA) 15 50 120 200 28 35 42 56 70 105 140 50 60 80 100 150 200 1.0 30 0.1 0.1 1 COMMON EMITTER VCE=5V 10 100 BASE-EMMITER VOLTAGE VBE (V) PD 350 40 120 —— Ta -55 to +150 - 65 to +175 300 Ta=25 ℃ POWER DISSIPATION PD (mW) (pF) VF C Maximum Average Reverse Current at @T A=25℃ C @T A=125℃ 1 115 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC ob 10 100 40 IE=0 CHARACTERISTICS 18 80 30 f=1MHz TSTG 16 60 21 1 -55 to +125 TJ Storage Temperature Range 14 40 RΘJA CJ Typical Junction Capacitance (Note 1) Cob —— VCB Operating Temperature Range 10 13 30 T =2 5℃ a VRRM T =1 00℃ a Maximum Recurrent Peak Reverse Voltage Rated DC Blocking Voltage 100 (mA) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 10 0.1 superimposed IC Ratings at 25℃ ambient temperature unless otherwise specified. 1000 phase half wave, 60Hz, resistive of inductive load. Single For capacitive load, derate current by 20% —— IC (mA) 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ • Epoxy : UL94-V0 rated flame retardant 4uA 3uA • Case : Molded plastic, SOD-123H , 2uA MIL-STD-750 • Terminals :Plated terminals, solderable per 1 CAPACITANCE hFE 8uA MIL-STD-19500 /228 RoHS product for packing code7uA suffix "G" Halogen free product for packing code 6uA suffix "H" DC CURRENT GAIN • 3 0 250 IR 0.50 0.70 150 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.9 0.85 0.92 0.5 200 NOTES: —— Ta=100℃ COLLECTOR CURRENT (mA) COLLECTOR CURRENT IC 4 0 hFE 1000 0.012(0.3) Typ. a Method 2026 0.146(3.7) 0.130(3.3) 10 DTC144TE 100 2- Thermal Resistance From Junction to Ambient 50 0 0.1 0 10 20 REVERSE VOLTAGE 2012-06 2012-0 30 V (V) 40 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144TE THRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2) forward voltage drop. G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • HighDTC144TE –T for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.