SCS751G(SOD 723)

WILLAS
FM120-M+
THRU
SCS751G
FM1200-M+
30mA Surface Mount Schottky Barrier Rectifiers-40V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-723SOD-123+
Package PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
zApplications
• Ultra high-speed switching.
General
epitaxial planar chip, metal silicon junction.
• Siliconrectification
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
zFeatures
MIL-STD-19500 /228
RoHS
packing
code suffix "G"
•
powerfor
mold
type.
1) Smallproduct
Halogen free product for packing code suffix "H"
( SOD-723 )
Mechanical
data
2) Low VF
• Epoxy : UL94-V0 rated flame retardant
3) High reliability
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
SOD-723
0.031(0.8) Typ.
Method 2026
zConstruction
•
Polarity
:
Indicated
by cathode band
Silicon epitaxial planar
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Mounting Position : Any
We declare that the material of product
•
Weight : Approximated
0.011 gram
compliance
with RoHS requirements.
Pb-Free package is available
MAXIMUM
RATINGS
AND
RoHS product
for packing
code suffix
”G”ELECTRICAL CHARACTERISTICS
Ratings
at 25℃free
ambient
temperature
unless
otherwise
specified.
Halogen
product
for packing
code
suffix “H”
Single
phase
half
wave,
60Hz,
resistive
of
inductive
load.
Moisture Sensitivity Level 1
For capacitive
load, derate
current cathode
by 20% end
Polarity: Color
band denotes
zAbsolute maximum
ratings (Ta=25°C)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Parameter
Symbol
Marking Code
12 Limits 13
14 Unit 15
16
18
10
115
120
VRMVRRM
Reverse
voltagePeak
(repetitive
peak)
20 40 30
40 V 50
60
80
100
150
200
Maximum
Recurrent
Reverse
Voltage
VR
Reverse voltage (DC)
30
V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Average rectified forward current
30
Io
mA
Maximum
DC
Blocking
Voltage
20
30
40
50
60
80
100
150
200
V
DC
IFSM
200
Forward current surge peak (60Hz・1cyc)
mA
J
unction
temperature
125
Tj
℃
Maximum Average Forward Rectified Current
IO
1.0
Operating/Storage temperature
-40 to +125
Tstg ℃
Peak Forward Surge Current 8.3 ms single half sine-wave
zElectrical
characteristic
Typical
Thermal Resistance
(Note 2)(Ta=25°C)
Parameter
Typical Junction Capacitance (Note 1)
Forward
voltage Range
Operating
Temperature
Reverse
current Range
Storage Temperature
Capacitance between terminals
RΘJA
SymbolCJ Min.
VF TJ
IR TSTG
Ct
CHARACTERISTICS
-
VF
Maximum
Average
Reverse Current at @T A=25℃
z DEVICE
MARKING
Rated DC Blocking Voltage
Device
NOTES:
SCS751G
Typ. Max.
-55
+125
- to 0.37
0.5
2
-
Unit
V
µA
pF
40
120Conditions
IF=1mA
-55 to +150
VR=30V
- 65 to +175
VR=1V , f=1MHz
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
30
IFSM
superimposed on rated load (JEDEC method)
@T A=125℃
Marking
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
5
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SCS751G
FM1200-M+
30mA
Surface
Mount
Schottky
Barrier
Rectifiers-40V
1.0A
SURFACE
MOUNT
SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
SOD-723SOD-123+
Package PACKAGE
Pb Free Produc
Package outline
Features
Electricalcharacteristiccurves(Ta=25OC)
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Ta=125℃
100000
optimize board space.
10
1
0.1
0REVERSE CURRENT:IR(nA)
• Low power loss, high efficiency.
Ta=75℃
current capability, low forward10000
voltage drop.
• High
Ta=125℃
• High surge capability.
Ta=25℃
protection.
• Guardring for overvoltage
1000
• Ultra high-speed switching.
Ta=-25℃
• Silicon epitaxial planar chip, metal silicon
100 junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.01
Ta=75℃
Ta=25℃
Ta=-25℃
• RoHS product for packing code suffix "G" 10
Halogen free product for packing code suffix "H"
0
Mechanical data
100 200 300 400 500 600 700
0
5
10 15 20 25 30 35
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
Epoxy : UL94-V0
rated flame retardant
•FORWARD
VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
320
310
0
Ta=25℃
VR=30V
n=30pcs
800
700
600
Maximum Recurrent Peak Reverse Voltage
VF DISPERSION MAP
Maximum RMS Voltage
VRRM
Maximum DC Blocking Voltage
VDC
VRMS
Maximum Average Forward Rectified Current
20
30
RESERVE RECOVERY TIME:trr(ns)
10
Dimensions
in inches and (millimeters)
9
Storage Temperature Range
AVE:3.40A
5
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0
Maximum
Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IFSM DISRESION MAP
AVE:111.0nA
8
7
25
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
6
5
4
AVE:1.81pF
3
2
CJ
10
13
30
14
40
15
50
16
60
14
21
28
35
42
20
30
40
50
IR DISPERSION MAP
TJ
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
-55 to +125
TSTG
5 SYMBOL
VF
0
@T A=125℃
NOTES:
18
80
10
100
115
150
120
200
56
70
105
140
80
100
150
200
Ct DISPERSION MAP
60
1.0
30
10
20 RΘJA
15
12
20
IO
Peak Forward Surge Current
8.3 ms single
half sine-wave
1cyc
Ifsm
25 IFSM
superimposed on rated load (JEDEC method)
15
Typical Junction Capacitance (Note 1)
10
Operating Temperature Range
20
0.040(1.0)
100
1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0
0
AVE:304.2mV
RATINGS
8.3ms
Typical Thermal Resistance (Note
2)
15
0.031(0.8) Typ.
PEAK SURGE
FORWARD CURRENT:IFSM(A)
280
Marking Code
200
10
0.031(0.8) Typ.
900
400 specified.
300
Ratings at 25℃ ambient temperature unless otherwise
300load.
Single phase half wave, 60Hz, resistive of inductive
5
0.024(0.6)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
MAXIMUM RATINGS AND 500
ELECTRICAL CHARACTERISTICS
290For capacitive load, derate current by 20%
0.071(1.8)
0.056(1.4)
1
40
1000
• Polarity : Indicated byTa=25℃
cathode band
IF=1mA
• Mounting Position : Any
n=30pcs
• Weight : Approximated 0.011 gram
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
330
0.012(0.3) Typ.
0.1
1
800
f=1MHz
0.146(3.7)
0.130(3.3)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.001
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
FORWARD CURRENT:IF(mA)
SOD-123H
• Low profile surface mounted application in order to
8
40
120
6
Ifsm
8.3ms 8.3ms
1cyc
-55 to +150
4 - 65 to +175
2
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
FM180-MH FM1100-MH FM1150-MH FM1200-MH
AVE:11.7ns
0.50
0.70
0.85
0
IR
1
trr DISPERSION MAP
0.5
0.9
10
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0.92
100
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SCS751G
FM1200-M
30mA
Surface
Mount
Schottky
Barrier
Rectifiers-40V
1.0A
SURFACE
MOUNT
SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
SOD-723 SOD-123+
Package PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
O
C)
SOD-123H
0.146(3.7)
0.130(3.3)
THAERMAL IMPEDANCE:Rth (℃/W)
TRANSIENT
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Electricalcharacteristiccurves(Ta=25
better reverse leakage current and thermal
resistance.
• Low profile surface mounted application in order to
optimize board space.
1000
• Low power10loss, high efficiency.
• High current capability, low forward voltage drop.
Ifsm
• High surge 8capability.
t
• Guardring for overvoltage protection.
switching.
• Ultra high-speed
6
• Silicon epitaxial planar chip, metal silicon junction.
100
• Lead-free parts meet environmental standards of
4
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free2 product for packing code suffix "H"
Mechanical data
0.071(1.8)
Rth(j-c)
0.056(1.4)
Mounted on epoxy board
IM=1mA
IF=10mA
time
1ms
300us
10
0.001
0
rated flame retardant
• Epoxy : UL94-V0
0.1
1
10
100
TIME:t(ms)
SOD-123H
• Case : Molded plastic,
IFSM-t CHARACTERISTICS
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Rth(j-a)
0.012(0.3) Typ.
0.1
0.040(1.0)
0.024(0.6)
10
TIME:t(s)
Rth-t CHARACTERISTICS
0.031(0.8) Typ.
1000
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
0.003
0.05
FORWARD POWER
DISSIPATION:Pf(W)
Marking Code
RATINGS
Sin(θ=180)
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
0.01
Maximum RMS Voltage
VRMS
14
21
20
30
Maximum DC Blocking Voltage
VDC
0
Maximum Average Forward
Rectified Current
IO
0
0.01
0.02
0.03
0.04
0.05
AVERAGE RECTIFIED
Peak Forward Surge Current 8.3 ms single half sine-wave
FORWARD CURRENT:Io(A) IFSM
superimposed on rated load (JEDEC
Io-Pfmethod)
CHARACTERISTICS
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
0.1
RΘJA
CJ
TJ
15
50
60
80
10
100
115
150
120
200
35
42
56
70
105
140
50
60
80
100
150
200
0.001
28
40
16
18
Sin(θ=180)
0
101.0
20
30
REVERSE
VOLTAGE:VR(V)
VR-P30
R CHARACTERISTICS
0
40
120
-55 to +125
40
-55 to +150
- 65 to +175
0.1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io
0A
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
FM1100-MH Io
FM1150-MH FM1200-MH
SYMBOL
0V
0.08
VR 0.9
0.92
VVR
F
0.50
0.70
0.85
t
t
D=t/T
0.5
Maximum Average Reverse Current at @T A=25℃ D=t/T
VR=20V
VR=20V
IR
0.06
T
Tj=125℃
Tj=125℃
DC
T
10
@T A=125℃
Rated DC Blocking 0.06
Voltage
DC
NOTES:
0.04 D=1/2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
14
40
TSTG
CHARACTERISTICS
0A
0.08
Maximum Forward Voltage
at 1.0A DC 0V
D=1/2
DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.02
Typical Thermal Resistance (Note 2)
0.002
2- Thermal Resistance From Junction to Ambient
0.02
Sin(θ=180)
0
2012-11
0.04
D=1/2
0.02
Sin(θ=180)
0
0
2012-06
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Ratings at 25℃ ambient
temperature unless otherwise specified.
0.04
Single phase half wave, 60Hz, resistive of inductive load.
DC
For capacitive load,
20%
D=1/2
0.03derate current by
REVERSE POWER
DISSIPATION:PR (W)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SCS751G
FM1200-M
30mA
Surface
Mount
Schottky
Barrier
Rectifiers-40V
1.0A
SURFACE
MOUNT
SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
SOD-723SOD-123+
Package PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOD−723
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.014(0.35)
.009(0.25)
.026(0.65)
.021(0.55)
MIL-STD-19500 /228
.043(1.10)
Halogen free product for packing code suffix "H"
Mechanical
.035(0.90) data
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Dimensions in inches and (millimeters)
.026(0.65)
.017(0.45)
.007(0.18)
.003(0.08)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
VDC
20
30
40
.059(1.50)
Maximum DC Blocking Voltage
.051(1.30)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
15
50
16
60
18
80
35
42
50
60
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
14
40
10
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SCS751G
FM1200-M+
30mA Surface Mount Schottky Barrier Rectifiers-40V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-723
Package PACKAGE
SOD-123+
Features
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
SCS751G ‐T
G
‐WS Tape&Reel: 8 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
for any errors or inaccuracies. Data sheet specifications and its information load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125
-55 to +150
Operating Temperature Range
TJ
65
to
+175
Storageapplications where a failure or malfunction of component or circuitry may directly Temperature Range
TSTG
or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
0.9
Maximum
Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.