Dual Bias Resistor Transistors SC-88/SOT-363 MUN52xxDW1T1 Series Package NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SC-88/SOT-363 6 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Symbol Value V CBO 50 V CEO 50 IC 100 Unit Vdc Vdc mAdc Pr eli mi Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Max 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) 2 3 6 Symbol mW/°C PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) R θJA Junction and Storage Temperature T J , T stg R θJL 5 °C/W 4 R1 Q2 R2 R2 Q1 R1 1 3 2 MARKING DIAGRAM 6 5 4 7X 1 Unit mW 670 (Note 1.) 490 (Note 2.) R θJA Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead 1. FR–4 @ Minimum Pad 2014.0ϴ Symbol PD 4 1 ry na MAXIMUM RATINGS 5 2 3 7X = Device Marking = (See Page 2) DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Unit mW mW/°C 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) °C/W –55 to +150 °C °C/W 2. FR–4 @ 1.0 x 1.0 inch Pad www.willas.com.tw Rev. 第1頁 Dual Bias Resistor Transistors SC-88/SOT-363 MUN52xxDW1T1 Series Package DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION Device Package Marking R1(K) R2(K) Shipping SOT-363 7A 10 10 3000/Tape&Reel MUN5212DW1T1 SOT-363 7B 22 22 3000/Tape&Reel MUN5213DW1T1 SOT-363 7C 47 47 3000/Tape&Reel MUN5214DW1T1 SOT-363 7D 10 47 3000/Tape&Reel MUN5215DW1T1 SOT-363 7E 10 Ğ 3000/Tape&Reel MUN5216DW1T1 SOT-363 7F 4.7 Ğ 3000/Tape&Reel MUN5230DW1T1 SOT-363 7G 1 1 3000/Tape&Reel MUN5231DW1T1 SOT-363 7H 2.2 2.2 3000/Tape&Reel MUN5232DW1T1 SOT-363 7J MUN5233DW1T1 SOT-363 7K MUN5234DW1T1 SOT-363 7L MUN5235DW1T1 SOT-363 MUN5236DW1T1 SOT-363 MUN5237DW1T1 SOT-363 ry MUN5211DW1T1 4.7 3000/Tape&Reel 4.7 47 3000/Tape&Reel 22 47 3000/Tape&Reel 7M 2.2 47 3000/Tape&Reel 7N 100 100 3000/Tape&Reel 22 3000/Tape&Reel mi na 4.7 47 Pr eli 7P 2014.0ϴ www.willas.com.tw Rev. 第2頁 Dual Bias Resistor Transistors SC-88/SOT-363 MUN5211DW1T1H Series Package Min Typ – – – – – – – – – – – – – – – – 50 50 – – – – – – – – – – – – – – – – – – Max Pr eli mi na ry ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Characteristic Symbol OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO I EBO Emitter-Base Cutoff Current MUN5211DW1T1 (V EB = 6.0 V, I C = 0) MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 Collector-Base Breakdown Voltage (I C = 10 µA, I E = 0) V (BR)CBO Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) V (BR)CEO 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 – – Unit nAdc nAdc mAdc Vdc Vdc 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2014.0ϴ www.willas.com.tw Rev. 第3頁 Dual Bias Resistor Transistors SC-88/SOT-363 Package ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic Symbol ON CHARACTERISTICS(Note 5.) h FE DC Current Gain MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 (Continued) Min Typ 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 Max mi na ry (V CE = 10 V, I C = 5.0 mA) MUN5211DW1T1H Series Pr eli Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat) (I C= 10mA, I B= 5mA) MUN5230DW1T1/MUN5231DW1T1 (I C= 10mA, IB= 1mA) MUN5215DW1T1/MUN5216DW1T1 MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1 Output Voltage (on) V OL MUN5211DW1T1 (V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ) MUN5212DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 (V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ) MUN5213DW1T1 (V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ) MUN5236DW1T1 (V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ) MUN5237DW1T1 Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ) V OH (V CC = 5.0 V, V B = 0.05 V, R L = 1.0 kΩ) MUN5230DW1T1 (V CC = 5.0 V, V B = 0.25 V, R L = 1.0 kΩ) MUN5215DW1T1 MUN5216DW1T1 MUN5233DW1T1 – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – 4.9 – Unit – – – – – – – – – – – – – – 0.25 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 – Vdc Vdc Vdc 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 2014.0ϴ www.willas.com.tw Rev. 第4頁 Dual Bias Resistor Transistors SC-88/SOT-363 MUN52xxDW1T1 Series Package ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued) Characteristic Symbol Min Typ ON CHARACTERISTICS(Note 6.) MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 Resistor Ratio MUN5211DW1T1/MUN5212DW1T1 MUN5213DW1T1/MUN5236DW1T1 MUN5214DW1T1/MUN5215DW1T1 MUN5216DW1T1/MUN5230DW1T1 MUN5231DW1T1/MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5237DW1T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 0.8 0.17 – 0.8 0.055 0.38 0.038 1.7 1.0 0.21 – 1.0 0.1 0.47 0.047 2.1 1.2 0.25 – 1.2 0.185 0.56 0.056 2.6 mi na ry Input Resistor Max Pr eli R 1 /R 2 Unit kΩ 6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% P D , POWER DISSIPATION (mW) 300 250 200 150 100 833°C 50 0 –50 0 50 100 150 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve 2014.0ϴ www.willas.com.tw Rev. 第5頁 Dual Bias Resistor Transistors SC-88/SOT-363 MUN52xxDW1T1 Series Package 0.1 0.01 0.001 0 20 40 50 I C , COLLECTOR CURRENT (mA) 10 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain 100 10 mi I C , COLLECTOR CURRENT (mA) 4 3 2 1 1 Pr eli C ob CAPACITANCE (pF) 100 na Figure 2. V CE(sat) versus I C 1000 ry 1 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5211DW1T1 0.1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current 2014.0ϴ www.willas.com.tw Rev. 第6頁 Dual Bias Resistor Transistors SC-88/SOT-363 MUN52xxDW1T1 Series Package 1 0.1 0.01 0 20 40 50 I C , COLLECTOR CURRENT (mA) 10 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain 100 mi I C , COLLECTOR CURRENT (mA) 4 3 2 1 10 1 Pr eli C ob CAPACITANCE (pF) 100 na Figure 7. V CE(sat) versus I C 1000 ry 10 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5212DW1T1 0.1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current 2014.0ϴ www.willas.com.tw Rev. 第7頁 Dual Bias Resistor Transistors SC-88/SOT-363 MUN52xxDW1T1 Series Package 1 0.1 0.01 0 20 40 50 I C , COLLECTOR CURRENT (mA) 1 10 1 10 I C, 100 COLLECTOR CURRENT (mA) Figure 13. DC Current Gain C ob CAPACITANCE (pF) mi I C , COLLECTOR CURRENT (mA) 100 0.8 0.4 0.2 10 1 Pr eli 0.6 0 100 na Figure 12. V CE(sat) versus I C 1000 ry 10 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5213DW1T1 0.1 0.01 0.001 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current 2014.0ϴ www.willas.com.tw Rev. 第8頁 Dual Bias Resistor Transistors SC-88/SOT-363 MUN52xxDW1T1 Series Package 0.1 0.01 0.001 0 20 40 60 80 I C , COLLECTOR CURRENT (mA) 4 200 150 100 50 0 1 2 3 4 5 10 15 20 40 50 60 70 80 90 100 I C , COLLECTOR CURRENT (mA) Figure 18. DC Current Gain I C , COLLECTOR CURRENT (mA) 100 mi 3.5 3 2.5 2 1.5 1 0.5 0 0 2 Pr eli C ob CAPACITANCE (pF) 250 na Figure 17. V CE(sat) versus I C 300 ry 1 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5214DW1T1 4 6 8 10 15 20 25 30 35 40 45 50 10 1 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance Figure 20. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current 2014.0ϴ www.willas.com.tw Rev. 第9頁 SC-88/SOT-363 Package Outline Drawing .004(0.10)MIN. SOT-363 na 4 2 3 mi 1 5 ry .054(1.35) .045(1.15) .087(2.20) .071(1.80) 6 MUN52xxDW1T1 Series .030(0.75) .021(0.55) .096(2.45) .071(1.80) Dual Bias Resistor Transistors .010(0.25) .003(0.08) Pr eli .056(1.40) .047(1.20) .016(0.40) .004(0.10) .043(1.10) .032(0.80) .004(0.10)MAX. Dimensions in inches and (millimeters) Rev.D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 2014.0ϴ PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 www.willas.com.tw Rev. 第 10 頁 ƵĂů ŝĂƐZĞƐŝƐƚŽƌdƌĂŶƐŝƐƚŽƌƐ ^ͲϴϴͬSOT-ϯϲϯ Package DhEϱϮdždžtϭdϭ ^ĞƌŝĞƐ Suggested Soldering Pad Layout SOT-363 mi na ry .026(0.65) Pr eli .075(1.90) .023(0.6 0) .015(0.40) Dimensions in inches and (millimeters) 2014.08 www.willas.com.tw RevB Rev. A 第 11 頁 Dual Bias Resistor Transistors SC-88/SOT-363 Device PN Part NumberH(1)-WS Package MUN52xxDW1T1 Series Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS and Haloge free produc.for.packing.code suffix“H”. ry ***Disclaimer*** Pr eli mi na WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.0ϴ www.willas.com.tw Rev. 第 12 頁