BSS84WT1(SOT 323)

WILLAS
FM120-M+
THRU
BSS84WT1
FM1200-M+
Power
MOSFET
mAmps,
50 Volts
130 BARRIER
1.0A SURFACE
MOUNT SCHOTTKY
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
P–Channel
SOT–323
power loss, high efficiency.
• Low
• High current capability, low forward voltage drop.
surge capability.
• High
These
miniature surface mount MOSFETs reduce power loss
overvoltage
protection.
• Guardring
conserveforenergy,
making
this device ideal for use in small power
high-speed switching.
• Ultra
management circuitry. Typical applications are dc–dc converters, load
epitaxial planar chip, metal silicon junction.
• Silicon
switching,
power management in portable and battery–powered
• Lead-free parts meet environmental standards of
products
such
as computers, printers, cellular and cordless telephones.
MIL-STD-19500 /228
•
RoHS
product
for
packing
Energy Efficient code suffix "G"
•
Halogen
free product
for packing
code suffix
"H" Package Saves Board Space
SOT–323
Surface
Mount
• Miniature
Mechanical
data
• Pb-Free package is available
: UL94-V0 rated flame retardant
• Epoxy
RoHS
product for packing code suffix ”G”
: Molded plastic, SOD-123H
• Case
0.031(0.8) Typ.
Halogen free product for packing code suffix “H”,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
3
0.056(1.4)
1
2
0.040(1.0)
SOT –323
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
THERMAL CHARACTERISTICS
Position : Any
• Mounting
Characteristic
• Weight : Approximated
0.011 gram
Dimensions in inches and (millimeters)
Marking Diagram
Total Device Dissipation FR–5 Board
PD
(Note
3.) TA = 25°C
MAXIMUM
RATINGS AND ELECTRICAL
Derate above 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal
Resistance,
Junction
Ambientload. RθJA
Single phase
half wave,
60Hz, resistive
ofto
inductive
Max
Unit
225
mW
556
°C/W
1.8
mW/°C
CHARACTERISTICS
For capacitive
load,
derate
current by 20%
Total
Device
Dissipation
PD
300
mW
AluminaRATINGS
Substrate,(Note 4.) TA = 25°CSYMBOL FM120-MH FM130-MHmW/°C
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Derate above 25°C
2.4
PD = Device Code
Marking Code
12
13
14
15
16
18
10
115
120
ThermalPeak
Resistance,
Junction to AmbientVRRM RθJA 20
417
°C/W
30
40
50
60
80M = Month
100 Code150
200
Maximum Recurrent
Reverse Voltage
Volts
Junction
Maximum RMS
Voltageand Storage Temperature
VRMSTJ, Tstg14
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
20
–o5521
to
+150
30
28
°C
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
1.0
ORDERING INFORMATION
Device
Package
Shipping
30
RΘJA
Typical Thermal Resistance (Note 2)
CJ
-55 to +125
MAXIMUMRange
RATINGS (T J = 25°C unless Totherwise
noted)
Operating Temperature
J
Typical Junction Capacitance (Note 1)
Storage Temperature Range
Symbol
CHARACTERISTICS
Drain–to–Source
Voltage
Gate–to–Source Voltage – Continuous
Drain Current
@T A=125℃
Rated DC Blocking Voltage
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
NOTES:
IR
1- Measured at 1Total
MHZ Power
and applied
reverse voltage
4.0 VDC.
Dissipation
@ TA =of25°C
2- Thermal Resistance
From and
Junction
to Ambient
Operating
Storage
Temperature
Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
2012-06
2012-0
-55 to +150
Amps
SOT-323 3000/Tape&Reel
Unit
℃/W
PF
℃
℃
3 Drain
FM120-MH FM130-MH
FM140-MH
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL V
50
Vdc
DSS
Volts
0.9
0.92
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Value
BSS84WT1
40
120
Amps
- 65 to +175
TSTG
Rating
Maximum Forward Voltage at 1.0A DC
PD
M
Symbol
VGS
± 20
Vdc
mA
ID
IDM
130
520
PD
225
mW
TJ, Tstg
– 55 to
150
°C
RθJA
556
°C/W
TL
260
°C
0.5
10
1
Gate
-
mAmps
2
Source
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BSS84WT1
FM1200-M+
Power
MOSFET
mAmps,
50 Volts
130 BARRIER
1.0A SURFACE
MOUNT SCHOTTKY
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Features
power dissipation offers
• Batch process design, excellent
Characteristic
Symbol
better reverse leakage current and thermal resistance.
Low CHARACTERISTICS
profile surface mounted application in order to
• OFF
optimize
board space.
Drain–to–Source
Breakdown Voltage
• Low(Vpower
Vdc,high
ID =efficiency.
250 µAdc)
GS = 0loss,
• High current capability, low forward voltage drop.
Zero Gate Voltage Drain Current
surge capability.
• High
(VDS = 25 Vdc, VGS = 0 Vdc)
for overvoltage protection.
• Guardring
(VDS = 50 Vdc, VGS = 0 Vdc)
switching.
• Ultra(Vhigh-speed
DS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
• Silicon epitaxial planar chip, metal silicon junction.
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
parts meet environmental standards of
• Lead-free
MIL-STD-19500
/228 (Note 1.)
ON
CHARACTERISTICS
• RoHS product for packing code suffix "G"
Gate–Source Threaded Voltage
Halogen free product for packing code suffix "H"
(VDS = VGS, ID = 1.0 mAdc)
V(BR)DSS
Static Drain–to–Source On–Resistance
: UL94-V0
rated
retardant
• Epoxy
(VGS
= 5.0 Vdc,
ID =flame
100 mAdc)
: Molded plastic, SOD-123H
• Case
Transfer Admittance
,
• Terminals
solderable
per MIL-STD-750
(VDS =:Plated
25 Vdc, terminals,
ID = 100 mAdc,
f = 1.0 kHz)
RATINGS
–
–
±10
nAdc
VGS(th)
0.8
–
2.0
Vdc
rDS(on)
–
5.0
10
Ohms
|yfs|
50
–
–
mS
pF
–
30
–
–
10
–
(VDG = 5.0 Vdc)
Crss
–
5.0
–
td(on)
–
2.5
–
tr
–
1.0
–
td(off)
–
16
–
tf
–
8.0
–
CHARACTERISTICS
VRRM
DIODE CHARACTERISTICS
Maximum SOURCE–DRAIN
RMS Voltage
VRMS
14
21
28
35
42
Maximum DC
Blocking Voltage
Continuous
Current
20
30
40
50 IS
60
VDC
IO
Voltage
2.) half sine-wave
Peak ForwardForward
Surge Current
8.3(Note
ms single
IFSM
1. Pulse
Test:
Width
≤ 300 µs, Duty Cycle ≤ 2%.
superimposed
on rated
loadPulse
(JEDEC
method)
2. Switching
characteristics
are independentRof
operating junction temperature.
Typical Thermal
Resistance
(Note 2)
ΘJA
0.6
Storage Temperature VRange
= 10 V
TSTG
DS
ns
VSD
25°C
Volts
105
140
Volts
– 100 0.130150
A 200
Volts
70
80
–
–
Amps
0.520
2.5
–
-55°C
VF
0.4
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
150°C
0.50 0.35
IR
V
℃/W
PF
-55 to +150
- 65 to +175
℃
0.1
0.9
0.85
0.5
0.3
2.5
3
3.5
4
0.2
Volts
mAmps
2.75 V
2.5 V
0.1
0
0.92
3.0 V
10
2.25 V
0.05
2
℃
VGS = 3.5 V
0.15
2- Thermal Resistance From Junction to Ambient
1.5
Amps
0.70
0.25
1- Measured at 1 0.2
MHZ and applied reverse voltage of 4.0 VDC.
1
TJ = 25°C
120
pC200
56
40
0.45
115
– 150
3.25
V
0.4 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH
FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH
UNIT
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
2012-0
–
1.0–
–
30
ISM
0.5
I D , DDAIN CUDDENT (AMPS)
I D , DDAIN CUDDENT (AMPS)
-55 to +125
TJ
Operating Temperature Range
2012-06
18
10
80 6000 100
120
CJ
TYPICAL
ELECTRICAL
CHARACTERISTICS
Typical Junction Capacitance (Note 1)
0
0.031(0.8) Typ.
Coss
16
60
0.3
0.040(1.0)
0.024(0.6)
(VDS = 5.0 Vdc)
15
50QT
NOTES:
0.1
15
0.071(1.8)
60
0.056(1.4)
Dimensions in inches and (millimeters)
Maximum Average
PulsedForward
Current Rectified Current
IGSS
14
40
µAdc
–
–
–
13
30
Rated DC Blocking Voltage
0.012(0.3) Typ.
–
–
–
12
20
0.5
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Gate Charge
Maximum Recurrent
Peak Reverse Voltage
–
Ciss
Marking Code
Unit
–
0.146(3.7)
0.130(3.3)
0.031(0.8) Typ.
Delaytemperature
Time
Ratings at Turn–On
25℃ ambient
unless otherwise specified.
Single phase
half
wave,
60Hz,
resistive
of inductive load.
Rise Time
(VDD = –15
15 Vdc, ID = –2.5
2.5 Adc,
For capacitive load, derate current by 20%
R
=
50
Ω)
L
Turn–Off Delay Time
Fall Time
Max
(VDS = 5.0 Vdc)
SWITCHING
CHARACTERISTICS
(Note ELECTRICAL
2.)
MAXIMUM
RATINGS AND
50
IDSS
Mechanical data
Method 2026
DYNAMIC CHARACTERISTICS
• Polarity
: Indicated by cathode band
Input Capacitance
Position : Any
• Mounting
Output Capacitance
• Weight
: Approximated 0.011 gram
Transfer Capacitance
Min
Typ
SOD-123H
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOUDCE VOLTAGE (VOLTS)
VDS, DDAIN-TO-SOUDCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
9
10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BSS84WT1
FM1200-M+
Power
MOSFET
mAmps,
50 Volts
130 BARRIER
1.0A SURFACE
MOUNT SCHOTTKY
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
D DS(on) , DDAIN-TO-SOUDCE DESISTANCE (OHMS)
optimize board space.
9
loss, high efficiency.
• Low power
VGScapability,
= 4.5 V
low forward voltage drop.
• High current
8
150°C
capability.
• High surge
• Guardring for overvoltage protection.
7
switching.
• Ultra high-speed
• Silicon epitaxial planar chip, metal silicon junction.
6
• Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
5
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
4
25°C
Mechanical data
-55°C
• Epoxy3: UL94-V0 rated flame retardant
• Case :2 Molded plastic, SOD-123H
,
0 :Plated
0.1 terminals,
0.2 solderable
0.3
0.4MIL-STD-750
0.5
• Terminals
per
0.6
D DS(on) , DDAIN-TO-SOUDCE DESISTANCE (OHMS)
• Batch process design, excellent power dissipation offers
ELECTRICAL
CHARACTERISTICS
better reverse leakage currentTYPICAL
and thermal
resistance.
• Low profile surface mounted application in order to
SOD-123H
7
0.146(3.7)
0.130(3.3)
VGS = 10 V
6.5
6
5.5
0.071(1.8)
0.056(1.4)
5
4.5
4
25°C
3.5
3
0.040(1.0)
0.024(0.6)
-55°C
2.5
20.031(0.8) Typ.
0.1
0
0.2
VGS, GATE-TO-SOUDCE VOLTAGE (VOLTS)
DDS(on) , DDAIN-TO-SOUDCE DESISTANCE
(NODMALIZED)
0.4
0.031(0.8) Typ.
0.5
0.6
FigureDimensions
4. On–Resistance
Drain Current
in inches and versus
(millimeters)
3. On–Resistance
• PolarityFigure
: Indicated
by cathode bandversus Drain Current
• Mounting Position : Any
• Weight
2 : Approximated 0.011 gram
0.3
ID, DDAIN CUDDENT (AMPS)
ID, DDAIN CUDDENT (AMPS)
Method 2026
1.8 MAXIMUM
150°C
0.012(0.3) Typ.
8
VDS = 40 V
7
TJ = 25°C
VGS = 10 V CHARACTERISTICS
RATINGS AND ELECTRICAL
ID = 0.52 A
Ratings at 25℃ ambient temperature unless otherwise specified.
6
1.6
Single phase half wave, 60Hz, resistive of inductive load.
5
For capacitive1.4
load, derate current by 20%
V
=
4.5
V
GS
FM130-MH FM140-MH
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
RATINGS
4
ID = 0.13 A
1.2
Marking Code
12
13
14
15
16
18
10
115
120
ID = 0.5 A
3
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
1
Volts
14
21
282
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
0.8
Volts
Maximum DC Blocking
Voltage
20
30
401
50
60
80
100
150
200
VDC
Amps
Maximum Average Forward Rectified Current
IO
1.0
0.6
0
-ā55
-5
45
95
145
500 1500
0
2000 1000
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM(°C)
Amps
TJ, JUNCTION TEMPEDATUDE
QT, 30
TOTAL GATE CHADGE (pC)
superimposed on rated load (JEDEC method)
Figure
5. On–Resistance
Typical Thermal
Resistance
(Note 2)
VariationRwith
ΘJA Temperature Operating Temperature Range
Storage Temperature Range
I D , DIODE CUDDENT (AMPS)
CHARACTERISTICS
NOTES:
PF
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
TJ = 150°C
VF
0.1
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
℃/W
-55 to +150
TSTG
Maximum Forward Voltage at 1.0A DC
120
-55 to +125
TJ
1
Charge
Figure
40 6. Gate
CJ
Typical Junction Capacitance (Note 1)
25°C
0.50
-55°C
0.70
IR
@T A=125℃
0.85
0.5
10
0.9
0.92
Volts
mAmps
0.01
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, DIODE FODWAD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BSS84WT1
FM1200-M+
Power
MOSFET
mAmps,
50 Volts
130 BARRIER
1.0A SURFACE
MOUNT SCHOTTKY
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT−323
optimize board space.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.012(0.3) Typ.
.096(2.45)
.078(2.00)
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
.087(2.20)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.070(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
Dimensions in inches and (millimeters)
.056(1.40)
• Polarity : Indicated by cathode band
.047(1.20)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
20
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
Dimensions
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SOLDERING FOOTPRINT*
Typical Junction Capacitance (Note 1)
0.65
Storage Temperature Range
0.025
CHARACTERISTICS
NOTES:
VF
2012-0
120
200
Volts
21
28
35
42
56
70
105
140
Volts
30
40
50
60
80
100
150
200
Volts
in inches and (millimeters)
@T A=125℃
0.50
1.0
30
Amps
Amps
40
120
℃/W
GENERIC
MARKING DIAGRAM
PF
-55 to +150
0.70
0.5
1.9
IR
0.075
XX 10
M
2- Thermal Resistance From0.7
Junction to Ambient
2012-06
115
150
℃
- 65 to +175
0.9
0.035
0.028
10
100
-55 to +125
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
18
80
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
16
60
XXM
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
15
50
CJ
0.65 TJ
0.025TSTG
Operating Temperature Range
14
40
RΘJA
Typical Thermal Resistance (Note 2)
.016(0.40)
14
.008(0.20)
20
13
30
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
SCALE 10:1
mm inches
1
0.85
0.9
= Specific Device Code
= Date Code
= Pb−Free Package
0.92
Volts
mAmps
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Power MOSFET 130 mAmps,
50 Volts
BSS84WT1
Ordering Information: Device PN BSS84WT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0
WILLAS ELECTRONIC CORP.
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