WILLAS FM120-M+ THRU BSS84WT1 FM1200-M+ Power MOSFET mAmps, 50 Volts 130 BARRIER 1.0A SURFACE MOUNT SCHOTTKY RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. P–Channel SOT–323 power loss, high efficiency. • Low • High current capability, low forward voltage drop. surge capability. • High These miniature surface mount MOSFETs reduce power loss overvoltage protection. • Guardring conserveforenergy, making this device ideal for use in small power high-speed switching. • Ultra management circuitry. Typical applications are dc–dc converters, load epitaxial planar chip, metal silicon junction. • Silicon switching, power management in portable and battery–powered • Lead-free parts meet environmental standards of products such as computers, printers, cellular and cordless telephones. MIL-STD-19500 /228 • RoHS product for packing Energy Efficient code suffix "G" • Halogen free product for packing code suffix "H" Package Saves Board Space SOT–323 Surface Mount • Miniature Mechanical data • Pb-Free package is available : UL94-V0 rated flame retardant • Epoxy RoHS product for packing code suffix ”G” : Molded plastic, SOD-123H • Case 0.031(0.8) Typ. Halogen free product for packing code suffix “H”, • Terminals :Plated terminals, solderable per MIL-STD-750 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 3 0.056(1.4) 1 2 0.040(1.0) SOT –323 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band THERMAL CHARACTERISTICS Position : Any • Mounting Characteristic • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Marking Diagram Total Device Dissipation FR–5 Board PD (Note 3.) TA = 25°C MAXIMUM RATINGS AND ELECTRICAL Derate above 25°C Ratings at 25℃ ambient temperature unless otherwise specified. Thermal Resistance, Junction Ambientload. RθJA Single phase half wave, 60Hz, resistive ofto inductive Max Unit 225 mW 556 °C/W 1.8 mW/°C CHARACTERISTICS For capacitive load, derate current by 20% Total Device Dissipation PD 300 mW AluminaRATINGS Substrate,(Note 4.) TA = 25°CSYMBOL FM120-MH FM130-MHmW/°C FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Derate above 25°C 2.4 PD = Device Code Marking Code 12 13 14 15 16 18 10 115 120 ThermalPeak Resistance, Junction to AmbientVRRM RθJA 20 417 °C/W 30 40 50 60 80M = Month 100 Code150 200 Maximum Recurrent Reverse Voltage Volts Junction Maximum RMS Voltageand Storage Temperature VRMSTJ, Tstg14 Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 20 –o5521 to +150 30 28 °C 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1.0 ORDERING INFORMATION Device Package Shipping 30 RΘJA Typical Thermal Resistance (Note 2) CJ -55 to +125 MAXIMUMRange RATINGS (T J = 25°C unless Totherwise noted) Operating Temperature J Typical Junction Capacitance (Note 1) Storage Temperature Range Symbol CHARACTERISTICS Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current @T A=125℃ Rated DC Blocking Voltage – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) NOTES: IR 1- Measured at 1Total MHZ Power and applied reverse voltage 4.0 VDC. Dissipation @ TA =of25°C 2- Thermal Resistance From and Junction to Ambient Operating Storage Temperature Range Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds 2012-06 2012-0 -55 to +150 Amps SOT-323 3000/Tape&Reel Unit ℃/W PF ℃ ℃ 3 Drain FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL V 50 Vdc DSS Volts 0.9 0.92 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Value BSS84WT1 40 120 Amps - 65 to +175 TSTG Rating Maximum Forward Voltage at 1.0A DC PD M Symbol VGS ± 20 Vdc mA ID IDM 130 520 PD 225 mW TJ, Tstg – 55 to 150 °C RθJA 556 °C/W TL 260 °C 0.5 10 1 Gate - mAmps 2 Source WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS84WT1 FM1200-M+ Power MOSFET mAmps, 50 Volts 130 BARRIER 1.0A SURFACE MOUNT SCHOTTKY RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Features power dissipation offers • Batch process design, excellent Characteristic Symbol better reverse leakage current and thermal resistance. Low CHARACTERISTICS profile surface mounted application in order to • OFF optimize board space. Drain–to–Source Breakdown Voltage • Low(Vpower Vdc,high ID =efficiency. 250 µAdc) GS = 0loss, • High current capability, low forward voltage drop. Zero Gate Voltage Drain Current surge capability. • High (VDS = 25 Vdc, VGS = 0 Vdc) for overvoltage protection. • Guardring (VDS = 50 Vdc, VGS = 0 Vdc) switching. • Ultra(Vhigh-speed DS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) • Silicon epitaxial planar chip, metal silicon junction. Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) parts meet environmental standards of • Lead-free MIL-STD-19500 /228 (Note 1.) ON CHARACTERISTICS • RoHS product for packing code suffix "G" Gate–Source Threaded Voltage Halogen free product for packing code suffix "H" (VDS = VGS, ID = 1.0 mAdc) V(BR)DSS Static Drain–to–Source On–Resistance : UL94-V0 rated retardant • Epoxy (VGS = 5.0 Vdc, ID =flame 100 mAdc) : Molded plastic, SOD-123H • Case Transfer Admittance , • Terminals solderable per MIL-STD-750 (VDS =:Plated 25 Vdc, terminals, ID = 100 mAdc, f = 1.0 kHz) RATINGS – – ±10 nAdc VGS(th) 0.8 – 2.0 Vdc rDS(on) – 5.0 10 Ohms |yfs| 50 – – mS pF – 30 – – 10 – (VDG = 5.0 Vdc) Crss – 5.0 – td(on) – 2.5 – tr – 1.0 – td(off) – 16 – tf – 8.0 – CHARACTERISTICS VRRM DIODE CHARACTERISTICS Maximum SOURCE–DRAIN RMS Voltage VRMS 14 21 28 35 42 Maximum DC Blocking Voltage Continuous Current 20 30 40 50 IS 60 VDC IO Voltage 2.) half sine-wave Peak ForwardForward Surge Current 8.3(Note ms single IFSM 1. Pulse Test: Width ≤ 300 µs, Duty Cycle ≤ 2%. superimposed on rated loadPulse (JEDEC method) 2. Switching characteristics are independentRof operating junction temperature. Typical Thermal Resistance (Note 2) ΘJA 0.6 Storage Temperature VRange = 10 V TSTG DS ns VSD 25°C Volts 105 140 Volts – 100 0.130150 A 200 Volts 70 80 – – Amps 0.520 2.5 – -55°C VF 0.4 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 150°C 0.50 0.35 IR V ℃/W PF -55 to +150 - 65 to +175 ℃ 0.1 0.9 0.85 0.5 0.3 2.5 3 3.5 4 0.2 Volts mAmps 2.75 V 2.5 V 0.1 0 0.92 3.0 V 10 2.25 V 0.05 2 ℃ VGS = 3.5 V 0.15 2- Thermal Resistance From Junction to Ambient 1.5 Amps 0.70 0.25 1- Measured at 1 0.2 MHZ and applied reverse voltage of 4.0 VDC. 1 TJ = 25°C 120 pC200 56 40 0.45 115 – 150 3.25 V 0.4 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH UNIT CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 2012-0 – 1.0– – 30 ISM 0.5 I D , DDAIN CUDDENT (AMPS) I D , DDAIN CUDDENT (AMPS) -55 to +125 TJ Operating Temperature Range 2012-06 18 10 80 6000 100 120 CJ TYPICAL ELECTRICAL CHARACTERISTICS Typical Junction Capacitance (Note 1) 0 0.031(0.8) Typ. Coss 16 60 0.3 0.040(1.0) 0.024(0.6) (VDS = 5.0 Vdc) 15 50QT NOTES: 0.1 15 0.071(1.8) 60 0.056(1.4) Dimensions in inches and (millimeters) Maximum Average PulsedForward Current Rectified Current IGSS 14 40 µAdc – – – 13 30 Rated DC Blocking Voltage 0.012(0.3) Typ. – – – 12 20 0.5 Vdc SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Gate Charge Maximum Recurrent Peak Reverse Voltage – Ciss Marking Code Unit – 0.146(3.7) 0.130(3.3) 0.031(0.8) Typ. Delaytemperature Time Ratings at Turn–On 25℃ ambient unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Rise Time (VDD = –15 15 Vdc, ID = –2.5 2.5 Adc, For capacitive load, derate current by 20% R = 50 Ω) L Turn–Off Delay Time Fall Time Max (VDS = 5.0 Vdc) SWITCHING CHARACTERISTICS (Note ELECTRICAL 2.) MAXIMUM RATINGS AND 50 IDSS Mechanical data Method 2026 DYNAMIC CHARACTERISTICS • Polarity : Indicated by cathode band Input Capacitance Position : Any • Mounting Output Capacitance • Weight : Approximated 0.011 gram Transfer Capacitance Min Typ SOD-123H 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOUDCE VOLTAGE (VOLTS) VDS, DDAIN-TO-SOUDCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics 9 10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS84WT1 FM1200-M+ Power MOSFET mAmps, 50 Volts 130 BARRIER 1.0A SURFACE MOUNT SCHOTTKY RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features D DS(on) , DDAIN-TO-SOUDCE DESISTANCE (OHMS) optimize board space. 9 loss, high efficiency. • Low power VGScapability, = 4.5 V low forward voltage drop. • High current 8 150°C capability. • High surge • Guardring for overvoltage protection. 7 switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. 6 • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 5 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 4 25°C Mechanical data -55°C • Epoxy3: UL94-V0 rated flame retardant • Case :2 Molded plastic, SOD-123H , 0 :Plated 0.1 terminals, 0.2 solderable 0.3 0.4MIL-STD-750 0.5 • Terminals per 0.6 D DS(on) , DDAIN-TO-SOUDCE DESISTANCE (OHMS) • Batch process design, excellent power dissipation offers ELECTRICAL CHARACTERISTICS better reverse leakage currentTYPICAL and thermal resistance. • Low profile surface mounted application in order to SOD-123H 7 0.146(3.7) 0.130(3.3) VGS = 10 V 6.5 6 5.5 0.071(1.8) 0.056(1.4) 5 4.5 4 25°C 3.5 3 0.040(1.0) 0.024(0.6) -55°C 2.5 20.031(0.8) Typ. 0.1 0 0.2 VGS, GATE-TO-SOUDCE VOLTAGE (VOLTS) DDS(on) , DDAIN-TO-SOUDCE DESISTANCE (NODMALIZED) 0.4 0.031(0.8) Typ. 0.5 0.6 FigureDimensions 4. On–Resistance Drain Current in inches and versus (millimeters) 3. On–Resistance • PolarityFigure : Indicated by cathode bandversus Drain Current • Mounting Position : Any • Weight 2 : Approximated 0.011 gram 0.3 ID, DDAIN CUDDENT (AMPS) ID, DDAIN CUDDENT (AMPS) Method 2026 1.8 MAXIMUM 150°C 0.012(0.3) Typ. 8 VDS = 40 V 7 TJ = 25°C VGS = 10 V CHARACTERISTICS RATINGS AND ELECTRICAL ID = 0.52 A Ratings at 25℃ ambient temperature unless otherwise specified. 6 1.6 Single phase half wave, 60Hz, resistive of inductive load. 5 For capacitive1.4 load, derate current by 20% V = 4.5 V GS FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH RATINGS 4 ID = 0.13 A 1.2 Marking Code 12 13 14 15 16 18 10 115 120 ID = 0.5 A 3 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM 1 Volts 14 21 282 35 42 56 70 105 140 Maximum RMS Voltage VRMS 0.8 Volts Maximum DC Blocking Voltage 20 30 401 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 0.6 0 -ā55 -5 45 95 145 500 1500 0 2000 1000 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM(°C) Amps TJ, JUNCTION TEMPEDATUDE QT, 30 TOTAL GATE CHADGE (pC) superimposed on rated load (JEDEC method) Figure 5. On–Resistance Typical Thermal Resistance (Note 2) VariationRwith ΘJA Temperature Operating Temperature Range Storage Temperature Range I D , DIODE CUDDENT (AMPS) CHARACTERISTICS NOTES: PF ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT TJ = 150°C VF 0.1 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage ℃/W -55 to +150 TSTG Maximum Forward Voltage at 1.0A DC 120 -55 to +125 TJ 1 Charge Figure 40 6. Gate CJ Typical Junction Capacitance (Note 1) 25°C 0.50 -55°C 0.70 IR @T A=125℃ 0.85 0.5 10 0.9 0.92 Volts mAmps 0.01 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, DIODE FODWAD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS84WT1 FM1200-M+ Power MOSFET mAmps, 50 Volts 130 BARRIER 1.0A SURFACE MOUNT SCHOTTKY RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT−323 optimize board space. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.012(0.3) Typ. .096(2.45) .078(2.00) .054(1.35) .045(1.15) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) .004(0.10)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .087(2.20) • Guardring for overvoltage protection. • Ultra high-speed switching. .070(1.80) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .010(0.25) .003(0.08) Dimensions in inches and (millimeters) .056(1.40) • Polarity : Indicated by cathode band .047(1.20) • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 20 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO Dimensions IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) SOLDERING FOOTPRINT* Typical Junction Capacitance (Note 1) 0.65 Storage Temperature Range 0.025 CHARACTERISTICS NOTES: VF 2012-0 120 200 Volts 21 28 35 42 56 70 105 140 Volts 30 40 50 60 80 100 150 200 Volts in inches and (millimeters) @T A=125℃ 0.50 1.0 30 Amps Amps 40 120 ℃/W GENERIC MARKING DIAGRAM PF -55 to +150 0.70 0.5 1.9 IR 0.075 XX 10 M 2- Thermal Resistance From0.7 Junction to Ambient 2012-06 115 150 ℃ - 65 to +175 0.9 0.035 0.028 10 100 -55 to +125 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 18 80 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ 16 60 XXM Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 15 50 CJ 0.65 TJ 0.025TSTG Operating Temperature Range 14 40 RΘJA Typical Thermal Resistance (Note 2) .016(0.40) 14 .008(0.20) 20 13 30 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% SCALE 10:1 mm inches 1 0.85 0.9 = Specific Device Code = Date Code = Pb−Free Package 0.92 Volts mAmps *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. Power MOSFET 130 mAmps, 50 Volts BSS84WT1 Ordering Information: Device PN BSS84WT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0 WILLAS ELECTRONIC CORP.