2SK3018LT1(SOT 23)

WILLAS
FM120-M+
THRU
2SK3018LT1
FM1200-M+
SOT-23 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
N-channel
MOSFET
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
optimize
board space.
z
Low
on-resistance
• Low power loss, high efficiency.
z
switching speed
High current capability, low forward voltage drop.
• Fast
High surge
capability.
z • Low
voltage
drive makes this device ideal for portable equipment
Guardring for overvoltage protection.
•
z
Easily designed drive circuits
• Ultra high-speed switching.
z • Easy
parallel
Siliconto
epitaxial
planar chip, metal silicon junction.
Lead-free
parts
meet
environmental
•
z
Pb-Free package is
available standards of
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. GATE
2. SOURCE
0.071(1.8)
0.056(1.4)
3. DRAIN
MIL-STD-19500 /228
product
for packing
code
RoHS product
for packing
code suffix
"G"suffix ”G”
• RoHS
Halogen
free
product
for
packing
code
suffix
"H" suffix “H”
Halogen free product for packing
code
Mechanical
data
Marking: KN
Equivalent
circuit
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
Units
Symbol Parameter
Value
,
• Terminals :Plated terminals, solderable per MIL-STD-750
VDS
30
Drain-Source
Voltage
Method 2026
: Indicated by
cathode band
Gate-Source
Voltage
VGSS• Polarity
Position Drain
: Any Current
Continuous
ID • Mounting
• Weight : Approximated 0.011 gram
±20
V
0.1
A
0.35
W
Dimensions in inches and (millimeters)
Power Dissipation
TJ
Junction
Temperature
150
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
℃
RATINGS
0.031(0.8) Typ.
V
PD
Ratings
ambientTemperature
temperature unless otherwise specified.
Tstg at 25℃Storage
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance, Junction-to-Ambient
RθJA
For capacitive load, derate current by 20%
0.024(0.6)
℃
-55~+150
℃ /W
357
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Marking Code
Maximum Recurrent Peak Reverse Voltage
Parameter
Maximum RMS Voltage
Off Characteristics
Drain-Source Breakdown Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
12
13
20
30
V
RRM
Symbol
Test Condition
14
21
VRMS
VDC
VDS
IO
30
Zero Gate Voltage Drain Current
IDSS Gate –Source leakage current
IGSS IFSM VGS =±20V, VDS = 0V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Gate
Threshold
Voltage
Typical
Thermal
Resistance
(Note 2)
Typical Junction Capacitance (Note 1)
Drain-Source
On-Resistance
Operating
Temperature
Range
15
50
28
35
40
50
CJ
RDS(on) TJ
Forward Transconductance
TSTG
gFS
CHARACTERISTICS
VGS = 4V, ID = 10mA
VDS =3V, ID = 10mA
Transfer Capacitance
70
80
100
1.0
30
0.8 40
120
200
Volts
105
140
Volts
150
200
Volts
Units
V
Amps
µA
±500
nA
Amps
V
℃/W
8
Ω
PF
13
Ω
120
115
150
0.2
1.5
-55 to +150
VGS =2.5V,ID =1mA
Max
56
60
30
10
100
Typ
42
-55 to +125
VF
0.50
Input Average
Capacitance
Maximum
Reverse Current at @T A=25℃ Ciss
IR
@T A=125℃Coss
Rated
DC Blocking
Voltage
VDS =5V,VGS =0V,f =1MHz
Output
Capacitance
Reverse
NOTES:
Min
18
80
- 65 to +175
℃
℃
mS
20
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Dynamic Characteristics*
Maximum Forward Voltage at 1.0A DC
16
60
VDS =30V,VGS = 0V
VGS(th)RΘJA VDS = 3V, ID =100µA
Storage Temperature Range
20
VGS = 0V, ID = 10µA
14
40
0.70
0.5 13
10
0.85
0.9
pF
9
pF
4
pF
15
ns
VGS =5V, VDD =5V,
35
ns
ID =10mA, Rg=10Ω, RL=500Ω,
80
ns
80
ns
Crss
0.92
Volts
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Switching Characteristics*
2- Thermal Resistance From Junction to Ambient
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
* These parameters have no way to verify.
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2SK3018LT1
FM1200-M+
SOT-23 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Typical Characteristics
Features
• Batch process design, excellent power dissipation offers
better reverse leakage
current
and thermal resistance.
Output
Characteristics
SOD-123H
Transfer
Characteristics
profile surface mounted application in order to
• Low 0.20
4.0V
optimizeTboard
=25℃ space.
a
200
VGS=3.0V
Pulsed
loss, high3.5V
efficiency.
• Low power
• High current capability, low forward voltage drop.
surge capability.
• High0.15
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.V
0.10
parts meet environmental standards of
• Lead-free
100
(mA)
(A)
ID
ID
DRAIN CURRENT
DRAIN CURRENT
=2.5V
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
VGS=2.0V
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
V =1.5V
,
0.00
• Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
0
1
2
3
4
5
VDS
0.071(1.8)
0.056(1.4)
10
3
1
0.040(1.0)
0.024(0.6)
0.3
0.1
Pulsed
0.031(0.8) Typ.
0
1
(V)
2
3
GATE TO SOURCE VOLTAGE
• Polarity : Indicated by cathode band
• Mounting Position : Any
RDS(ON) —— ID
• Weight
: Approximated 0.011
gram
60
VGS
Dimensions in inches and (millimeters)
RDS(ON) —— VGS
15
Ta=25℃
Ta=25℃
( Ω)
12
20
13
30
Maximum RMS Voltage
20
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
ON-RESISTANCE
VRRM
VGS=2.5V
IO
Maximum Average Forward Rectified Current
superimposed on rated
load (JEDEC method)
0
3
Typical Thermal Resistance (Note 2)
10
30
Typical Junction Capacitance (Note 1)
ID
RΘJA
(mA)
CJ
TJ
Operating Temperature Range
Storage Temperature Range
200
100
IS
——
IS (mA)
NOTES:
100
200
35
42
50
60
5
0
0
5
10
100
115
150
120
200
Volts
56
70
105
140
Volts
80
100
150
200
Volts
ID=100mA
1.0
30
40
120
Amps
Amps
10
GATE TO SOURCE VOLTAGE
-55 to +125
15
VGS
20
℃/W
(V)
PF
-55 to +150
℃
- 65 to +175
VF
Pulsed
Maximum Average Reverse Current at @T A=25℃
28
18
80
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Ta=25℃ at 1.0A DC
Maximum Forward Voltage
@T A=125℃
30 Voltage
Rated DC Blocking
16
60
TSTG
VSD
VCHARACTERISTICS
=0V
GS
15
50
ID=50mA
GS
DRAIN CURRENT
14
40
40
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
V =4V
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Recurrent Peak Reverse Voltage
1
Pulsed
RDS(ON)
RATINGS
ON-RESISTANCE
RDS(ON)
( Ω)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive 40
load, derate current by 20%
Marking Code
4
(V)
Pulsed
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
VDS=3V
Ta=25℃
0.031(0.8) Typ.
GS
DRAIN
TO SOURCE VOLTAGE
Method
2026
0.012(0.3) Typ.
30
GS
0.05
Mechanical
data
0.146(3.7)
0.130(3.3)
0.50
0.70
0.85
0.5
IR
10
0.9
0.92
Volts
mAmps
10
SOURCE CURRENT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
3
1
0.3
2012-06
0.1
0.2
0.4
0.6
SOURCE TO DRAIN VOLTAGE
2012-10
0.8
VSD (V)
1.0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2SK3018LT1
FM1200-M+
SOT-23 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-23
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
Mechanical data
0.012(0.3) Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
.080(2.04)
Maximum RMS Voltage
Maximum DC Blocking Voltage.070(1.78)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Storage Temperature Range
15
50
16
60
.004(0.10)MAX.
CHARACTERISTICS
18
80
10
115
.008(0.20)
70
105
.003(0.08)
14
21
28
35
42
56
20
30
40
50
60
80
IO
IFSM
100
100
150
150
120
200
Volts
140
Volts
200
Volts
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
IR
@T A=125℃
NOTES:
.020(0.50)
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
14
40
VDC
TJ
Operating Temperature Range
13
30
VRMS
CJ
Typical Junction Capacitance (Note 1)
Rated DC Blocking Voltage
12
20
RΘJA
Typical Thermal Resistance (Note 2)
VRRM
2- Thermal Resistance From Junction to Ambient
0.50
0.70
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
0.85
0.5
0.9
0.92
Volts
mAmps
10
Dimensions in inches and (millimeters)
2012-06
2012-10
WILLAS ELECTRONIC CORP.
Rev.D
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate MOSFETS
2SK3018LT1
Ordering Information: Device PN 2SK3018LT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10
WILLAS ELECTRONIC CORP.
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