WILLAS FM120-M+ THRU 2N4003NLT1 FM1200-M+ Small Signal MOSFET 30V,0.56A, SOT-23 1.0A SURFACE MOUNT SCHOTTKY BARRIER Single, RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. Gate ESD Protection, N−Channel current capability, low forward voltage drop. • High • High surge capability. • Guardring Features for overvoltage protection. high-speed switching. • Ultra Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design • Low • Silicon epitaxial planar chip, metal silicon junction. • Low Gate Charge for Fast Switching parts meet environmental standards of • Lead-free Gate • ESD Protected MIL-STD-19500 /228 • Minimum Breakdown Voltage Rating of 30 V product for packing code suffix "G" • RoHS 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) available Halogen free package product forispacking code suffix "H" • Pb-Free Mechanical RoHS product data for packing code suffix ”G” 0.040(1.0) SOT-23 Halogen free product for packing code suffix “H” : UL94-V0 rated flame retardant • Epoxy • Case : Molded plastic, SOD-123H Applications , • Terminals :Plated terminals, solderable per MIL-STD-750 • Level Shifters Method 2026 • Level Switches • Polarity : Indicated by cathode band • Low Side Load Switches • Mounting Position : Any • Portable Applications • Weight : Approximated 0.011 gram 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Drain 3 Dimensions in inches and (millimeters) Gate 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Continuous Drain Marking Code Current (Note 1) Steady State Maximum Recurrent Peak Reverse Voltage Power Dissipation Maximum RMS Voltage (Note 1) TA = 25°C TA =V85°C RRM Steady State VRMS VDC Continuous Drain t < 10 s TA = 25°C Maximum Average Forward Rectified Current IO Current (Note 1) TA = 85°C Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Power Dissipation t<5s superimposed on rated load (JEDEC method) (Note 1) Typical Thermal Resistance (Note 2) RΘJA Pulsed Drain Current tp = 10 ms CJ Typical Junction Capacitance (Note 1) Operating Range Junction and Storage Temperature Operating Temperature TJ Storage Temperature Range Unit 30 V ±20 V ID 12 20 0.5 13 0.37 30 A 14 40 PD 14 0.69 21 W 28 35 42 20 ID 30 0.56 40 A 50 60 TSTG Source Current (Body Diode) CHARACTERISTICS 16 60 PD 0.83 IDM 1.7 W TJ, Tstg 1.0 TL 260 10 100 120 200 Volts 56 70 105 140 80 100 3 Drain 150 200 Volts MARKING DIAGRAM - 65 to +175 TR8 M A 115 150 Volts 40 120 A -55−55 to +125 to °C 150 IS 18 80 1.0 30 0.40 0.50 °C Maximum Average Reverse Current at @T A=25℃ Stresses exceeding Maximum Ratings mayIR damage the device. Maximum @T A=125℃ Rated DC Blocking RatingsVoltage are stress ratings only. Functional operation above the Recommended NOTES: 15 50 TR8 Amps Amps ℃/W 1 PF 2 Gate Source -55 to +150 ℃ = Specific Device Code = Month Code ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Lead Temperature for Soldering Purposes VF (1/8” from case for 10 s) Maximum Forward Voltage at 1.0A DC 2 Source SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum DC Blocking Voltage Value M Parameter Symbol Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Drain−to−Source Voltage VDSS For capacitive load, derate current by 20% Gate−to−Source Voltage VGS Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 0.70 0.9 0.85 ORDERING INFORMATION 0.5 10 Device Package 2N4003NLT1 SOT−23 0.92 Volts mAmps Shipping 3000/Tape & Reel 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. THERMAL RESISTANCE RATINGS 2- Thermal Resistance From Junction to Ambient Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 180 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 150 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N4003NLT1 FM1200-M+ Small Signal MOSFET 30V,0.56A, SOT-23 1.0A SURFACE MOUNT SCHOTTKY BARRIER Single, RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to (TJ = 25°C unless otherwise specified) ELECTRICAL optimize board CHARACTERISTICS space. high efficiency. • Low power loss, Symbol Parameter • High current capability, low forward voltage drop. OFF CHARACTERISTICS surge capability. • High Drain−to−Source Breakdownprotection. Voltage V(BR)DSS for overvoltage • Guardring high-speed switching. • Ultra Drain−to−Source Breakdown Voltage V(BR)DSS/TJ epitaxialCoefficient planar chip, metal silicon junction. • Silicon Temperature • Lead-free parts meet environmental standards of Zero Gate Voltage/228 Drain Current MIL-STD-19500 IDSS • RoHS product for packing code suffix "G" Halogen free product for packing Gate−to−Source Leakage Currentcode suffix "H" IGSS Typ Max 0.012(0.3) Typ. 30 VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 30 V TJ = 25°C RDS(on) gFS mV/°C 1.0 mA ±1.0 mA 0.040(1.0) 0.024(0.6) 0.8 = VDS, ID = 250 mA Units V 0.071(1.8) 0.056(1.4) 40 : UL94-V0 rated flame retardant • Epoxy VGS(TH) Gate Threshold Voltage VGS • Case : Molded plastic, SOD-123H Negative Threshold VGS(TH)/TJ , Temperature Coefficient • Terminals :Plated terminals, solderable per MIL-STD-750 Method Drain−to−Source On2026 Resistance Min 0.130(3.3) VDS = 0 V, VGS = ±10 V Mechanical data ON CHARACTERISTICS (Note 3) • Polarity : Indicated by cathode band • Mounting Position : Any Forward Transconductance • Weight : Approximated 0.011 gram 0.146(3.7) Test Condition 1.6 3.4 0.031(0.8) Typ. VGS = 4.0 V, ID = 10 mA 0.031(0.8) Typ. 1.0 1.5 Dimensions in inches and (millimeters) VGS = 2.5 V, ID = 10 mA 1.5 VDS = 3.0 V, ID = 10 mA 0.33 2.0 V mV/°C W S CHARGES AND CAPACITANCES Input Capacitance MAXIMUM Ciss RATINGS AND ELECTRICAL CHARACTERISTICS Ratings atOutput 25℃ Capacitance ambient temperature unless otherwise specified. Coss Single phase half wave, 60Hz, resistive of inductive load. Reverse Transfer Capacitance Crss For capacitive load, derate current by 20% Total Gate Charge QG(TOT) RATINGS Threshold Gate Charge Marking Code QG(TH) Gate−to−Source Gate Charge Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Charge Gate−to−Drain VRMS QGD 14 20 Maximum SWITCHING DC Blocking Voltage CHARACTERISTICS (Note 4) VDC Maximum Average Forward Rectified Current Turn−On Delay Time Peak Forward Surge Current 8.3 ms single half sine-wave Rise Time superimposed on rated load (JEDEC method) Turn−Off Delay Time Typical Thermal Resistance (Note 2) Fall Time IO td(on) IFSM tr RΘJA CJ Operating SOURCE−DRAIN Temperature RangeDIODE CHARACTERISTICS TJ Typical Junction Capacitance (Note 1) Storage Temperature Range Forward Diode Voltage CHARACTERISTICS ReverseVoltage Recovery TimeDC Maximum Forward at 1.0A td(off) tf pF 8.1 1.15 VGS 24 V, 13 = 5.0 V, 14VDS = 15 ID = 30 400.1 A 50 TSTG VSD 16 60 18 80 21 28 35 42 56 30 40 50 60 80 1.0 30 VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 W 40 120 -55 to +125 VGS = 0 V, IS = 10 mA 0.15 10 0.32100 115 150 120 nC 200 Volts 0.23 70 105 140 Volts 150 200 Volts 100 Amps 16.7 47.9 Amps ns 65.1 ℃/W 64.2 PF -55 to +150 TJ = 25°C - 65 to +175 0.65 TJ = 125°C 0.45 ℃ 0.7 ℃ V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Average Reverse Current at @T A=25℃ IR tRR Pulse Test: pulse width v @T 300A=125℃ ms, duty cycle v 2%. Rated DC3.Blocking Voltage VGS =0.50 0 V, dIS/dt = 8A/ms, 0.70 IS = 10 mA 4. Switching characteristics are independent of operating junction temperatures. 19.7 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 VRRM QGS 20 21 VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 14 0.85 0.5 10 0.9 ns0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N4003NLT1 FM1200-M+ Small Signal MOSFET 30V,0.56A, Single, SOT-23 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline (TJ = 25°C unless otherwise noted) TYPICAL PERFORMANCE CURVES Features • Batch process design, excellent power dissipation offers better1.6 reverse leakage current and thermal resistance. 1.6 V to 5 V application in order to • Low profileVsurface GS = 10 mounted optimize board space. ID, DRAIN CURRENT (A) MIL-STD-19500 /228 0.4 ID, DRAIN CURRENT (A) 4.5 V • Low power loss, high efficiency. current capability, low forward voltage drop. • High 1.2 • High surge capability. • Guardring for overvoltage protection. high-speed switching. • Ultra 0.8 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 4V 3.5 V • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Method 2026 ID = 0.2 A Single phase half wave, 60Hz, resistive of inductive load. For capacitive 4load, derate current by 20% RATINGS 0.4 0 Maximum Recurrent Peak Reverse Voltage VRRM 0 Maximum RMS Voltage VRMS 14 2.4 Voltage 2.8 Maximum DC Blocking 13 30 21 4 30 3.2 VDC 3.6 20 VGS, GATE−TO−SOURCE VOLTAGE (V) Maximum Average Forward Rectified Current IO Figure 3. On−Resistance vs. Gate−to−Source Peak Forward Surge Current 8.3 ms single half sine-wave Voltage IFSM 1 TJ = 125°C 1.80 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range V = 4.5 V TJ 1.60 TJ = 25°C 0.4 14 0.2 40 15 50 16 60 TJ = −55°C 18 10 80 100 28 0 35 42 56 ID = 0.3 A GS Storage Temperature Range CHARACTERISTICS 1000 VGS = 0 V -55 to +125 VF 1.20 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 1.00 50 0.1 60 0.2 80 0.3 100 0.4 ID, 1.0 DRAIN CURRENT (AMPS) 40 120 0.50 IR 2- Thermal Resistance From Junction to Ambient 0.60 −25 −50 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature 2012-06 2012-10 105 0.5 150 140 0.6 200 Volts Volts Volts Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ TJ = 150°C 0.70 100 150 0.9 0.85 0.92 0.5 Volts mAmps 10 TJ = 125°C 0.80and applied reverse voltage of 4.0 VDC. 1- Measured at 1 MHZ 120 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 70 115 150 Figure 4. On−Resistance vs. Drain Current and 30 Temperature TSTG 1.40 0 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) (NORMALIZED) Dimensions in inches and (millimeters) VGS = 10 V 0.6 40 RΘJA Typical Thermal Resistance (Note 2) NOTES: 5 0.031(0.8) Typ. 0.8 superimposed on rated load (JEDEC method) 0.040(1.0) 3 0.024(0.6) 4 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 1 0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 20 TJ = 125°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code 2 TJ = 25°C 0.071(1.8) 0.056(1.4) Figure 2. Transfer Characteristics 6 Ratings at 25℃ ambient temperature unless otherwise specified. 0.012(0.3) Typ. 0.031(0.8) Typ. 10 : Indicated by cathode band Polarity • • Mounting Position : Any 8 : Approximated 0.011 gram • Weight TJ = −55°C 0.146(3.7) 0.130(3.3) 0.8 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1 0 rated flame retardant • Epoxy : UL94-V0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderableCharacteristics per MIL-STD-750 Figure 1. On−Region SOD-123H 1.2 2.5 V Mechanical data 0 VDS ≥ 10 V 10 0 5 10 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−to−Source Leakage Current vs. Voltage WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N4003NLT1 FM1200-M+ Small Signal MOSFET 30V,0.56A, SOT-23 1.0A SURFACE MOUNT SCHOTTKY BARRIER Single, RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) application in order to • Low profile surface mounted optimize board space. MIL-STD-19500 /228 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) power loss, high efficiency. • Low50 TJ = 25°C • High current capability, low forward voltage drop. VGS = 0 V • High surge capability. 40 for overvoltage protection. • Guardring • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon 30 • Lead-free parts meet environmental standards of Ciss • RoHS 20product for packing code suffix "G" Halogen free product for packing code suffix "H" Coss Mechanical data 10 Crss • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0 , 12per MIL-STD-750 0 :Plated 4terminals, 8solderable 16 • Terminals 5 0.146(3.7) 0.130(3.3) TJ = 25°C ID = 0.1 A 4 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 3 2 1 0 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 20 0.031(0.8) Typ. 0.4 0 VOLTAGE (V) Method DRAIN−TO−SOURCE 2026 1.2 0.8 QG, TOTAL GATE CHARGE (nC) • Polarity : Indicated by cathode band Figure 7. Capacitance Variation • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Figure 8. Gate−to−Source & Drain−to−Source Voltage vs. Total Charge MAXIMUM RATINGS AND 1ELECTRICAL CHARACTERISTICS Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage 0.01 VRRM 12 20 VRMS VDC 13 30 14 40 15 50 14 TJ = 150°C 21 28 20 40 30 16 60 18 80 10 100 115 150 120 200 Volts 35 TJ = 25°C 42 56 70 105 140 Volts 50 80 100 150 200 Volts 60 IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave 30 0.001 IFSM superimposed on rated load (JEDEC method) 0.8 0.4 0.6 Typical Thermal Resistance (Note 2) RΘJA VSD, SOURCE−TO−DRAIN VOLTAGE (V) 40 120 Typical Junction Capacitance (Note 1) CJ Figure 9. Diode Forward -55 to +125 Voltage vs. Current Operating Temperature Range TJ Maximum Average Forward Rectified Current IS, SOURCE CURRENT (A) Ratings at 25℃ ambient temperature unless otherwise specified. VGS = 0 V Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS UNIT Storage Temperature Range Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N4003NLT1 FM1200-M+ Small Signal MOSFET 30V,0.56A, SOT-23 1.0A SURFACE MOUNT SCHOTTKY BARRIER Single, RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. SOD-123H SOT-23 MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) • Lead-free parts meet environmental standards of .106(2.70) • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .080(2.04) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) .020(0.50) .012(0.30) .055(1.40) .035(0.89) .086(2.10) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Halogen free product for packing code suffix "H" Mechanical data 1.0 30 40 120 CJ -55 to +125and (millimeters) TJ Dimensions in inches Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.50 0.037 0.95 IR 0.037 0.95 @T A=125℃ NOTES: 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.079 2.0 0.035 0.9 2012-06 2012-10 0.031 0.8 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. Small Signal MOSFET 30V,0.56A, Single, SOT-23 2N4003NLT1 Ordering Information: Device PN 2N4003NLT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.