2N4003NLT1(SOT 23)

WILLAS
FM120-M+
THRU
2N4003NLT1
FM1200-M+
Small
Signal
MOSFET
30V,0.56A,
SOT-23
1.0A SURFACE
MOUNT
SCHOTTKY
BARRIER Single,
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
Gate
ESD Protection, N−Channel
current capability, low forward voltage
drop.
• High
• High surge capability.
• Guardring
Features for overvoltage protection.
high-speed switching.
• Ultra
Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design
• Low
• Silicon epitaxial planar chip, metal silicon junction.
• Low Gate
Charge for Fast Switching
parts meet environmental standards of
• Lead-free
Gate
• ESD Protected
MIL-STD-19500
/228
• Minimum
Breakdown
Voltage
Rating of 30 V
product for
packing code
suffix "G"
• RoHS
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
available
Halogen
free package
product forispacking
code suffix "H"
• Pb-Free
Mechanical
RoHS product data
for packing code suffix ”G”
0.040(1.0)
SOT-23
Halogen
free product
for packing
code suffix “H”
: UL94-V0
rated flame
retardant
• Epoxy
• Case : Molded plastic, SOD-123H
Applications
,
• Terminals :Plated terminals, solderable per MIL-STD-750
• Level Shifters
Method 2026
• Level Switches
• Polarity : Indicated by cathode band
• Low Side Load Switches
• Mounting Position : Any
• Portable Applications
• Weight : Approximated 0.011 gram
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Drain
3
Dimensions in inches and (millimeters)
Gate 1
MAXIMUM
RATINGS
(TJ = 25°C
unless
otherwise noted)
MAXIMUM
RATINGS
AND
ELECTRICAL
CHARACTERISTICS
RATINGS
Continuous Drain
Marking Code
Current (Note 1)
Steady
State
Maximum Recurrent Peak Reverse Voltage
Power
Dissipation
Maximum RMS
Voltage
(Note 1)
TA = 25°C
TA =V85°C
RRM
Steady State
VRMS
VDC
Continuous Drain
t < 10 s TA = 25°C
Maximum Average Forward Rectified Current
IO
Current (Note 1)
TA = 85°C
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Power Dissipation
t<5s
superimposed on rated load (JEDEC method)
(Note 1)
Typical Thermal Resistance (Note 2)
RΘJA
Pulsed Drain Current
tp = 10 ms CJ
Typical Junction Capacitance (Note 1)
Operating Range
Junction and Storage Temperature
Operating Temperature
TJ
Storage Temperature Range
Unit
30
V
±20
V
ID
12
20
0.5
13
0.37
30
A
14
40
PD
14
0.69
21
W
28
35
42
20
ID
30
0.56
40
A
50
60
TSTG
Source Current (Body Diode)
CHARACTERISTICS
16
60
PD
0.83
IDM
1.7
W
TJ,
Tstg
1.0
TL
260
10
100
120
200
Volts
56
70
105
140
80
100
3
Drain
150
200
Volts
MARKING DIAGRAM
- 65 to +175
TR8
M
A
115
150
Volts
40
120
A
-55−55
to +125
to
°C
150
IS
18
80
1.0
30
0.40
0.50
°C
Maximum Average Reverse Current at @T A=25℃
Stresses exceeding Maximum Ratings mayIR damage the device. Maximum
@T A=125℃
Rated DC Blocking
RatingsVoltage
are stress ratings only.
Functional operation above the Recommended
NOTES:
15
50
TR8
Amps
Amps
℃/W
1
PF
2
Gate
Source
-55 to +150
℃
= Specific Device Code
= Month Code
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Lead Temperature for Soldering Purposes
VF
(1/8” from case for 10 s)
Maximum Forward Voltage at 1.0A DC
2
Source
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum DC Blocking Voltage
Value
M
Parameter
Symbol
Ratings at 25℃ ambient temperature
unless otherwise specified.
Single phase
half
wave,
60Hz,
resistive
of
inductive
load.
Drain−to−Source Voltage
VDSS
For capacitive load, derate current by 20%
Gate−to−Source Voltage
VGS
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
0.70
0.9
0.85
ORDERING INFORMATION
0.5
10
Device
Package
2N4003NLT1
SOT−23
0.92
Volts
mAmps
Shipping
3000/Tape & Reel
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
THERMAL RESISTANCE RATINGS
2- Thermal Resistance From Junction to Ambient
Parameter
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
180
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
150
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N4003NLT1
FM1200-M+
Small
Signal
MOSFET
30V,0.56A,
SOT-23
1.0A SURFACE
MOUNT
SCHOTTKY
BARRIER Single,
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
(TJ = 25°C unless otherwise specified)
ELECTRICAL
optimize board CHARACTERISTICS
space.
high efficiency.
• Low power loss,
Symbol
Parameter
• High current capability, low forward voltage drop.
OFF CHARACTERISTICS
surge capability.
• High
Drain−to−Source
Breakdownprotection.
Voltage
V(BR)DSS
for overvoltage
• Guardring
high-speed switching.
• Ultra
Drain−to−Source Breakdown Voltage
V(BR)DSS/TJ
epitaxialCoefficient
planar chip, metal silicon junction.
• Silicon
Temperature
• Lead-free parts meet environmental standards of
Zero Gate Voltage/228
Drain Current
MIL-STD-19500
IDSS
• RoHS product for packing code suffix "G"
Halogen
free product
for packing
Gate−to−Source
Leakage
Currentcode suffix "H" IGSS
Typ
Max
0.012(0.3) Typ.
30
VGS = 0 V, ID = 100 mA
VGS = 0 V,
VDS = 30 V
TJ = 25°C
RDS(on)
gFS
mV/°C
1.0
mA
±1.0
mA
0.040(1.0)
0.024(0.6)
0.8
= VDS, ID = 250 mA
Units
V
0.071(1.8)
0.056(1.4)
40
: UL94-V0 rated flame retardant
• Epoxy
VGS(TH)
Gate Threshold Voltage
VGS
• Case : Molded plastic, SOD-123H
Negative Threshold
VGS(TH)/TJ
,
Temperature
Coefficient
• Terminals
:Plated
terminals, solderable per MIL-STD-750
Method
Drain−to−Source
On2026
Resistance
Min
0.130(3.3)
VDS = 0 V, VGS = ±10 V
Mechanical
data
ON CHARACTERISTICS (Note 3)
• Polarity : Indicated by cathode band
• Mounting Position : Any
Forward Transconductance
• Weight : Approximated 0.011 gram
0.146(3.7)
Test Condition
1.6
3.4
0.031(0.8) Typ.
VGS = 4.0 V, ID = 10 mA
0.031(0.8) Typ.
1.0
1.5
Dimensions in inches and (millimeters)
VGS = 2.5 V, ID = 10 mA
1.5
VDS = 3.0 V, ID = 10 mA
0.33
2.0
V
mV/°C
W
S
CHARGES AND CAPACITANCES
Input Capacitance
MAXIMUM
Ciss
RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings atOutput
25℃ Capacitance
ambient temperature unless otherwise specified.
Coss
Single phase half wave, 60Hz, resistive of inductive load.
Reverse Transfer Capacitance
Crss
For capacitive load, derate current by 20%
Total Gate Charge
QG(TOT)
RATINGS
Threshold Gate Charge
Marking Code
QG(TH)
Gate−to−Source
Gate Charge
Maximum Recurrent
Peak Reverse
Voltage
Maximum RMS
Voltage Charge
Gate−to−Drain
VRMS QGD 14
20
Maximum SWITCHING
DC Blocking Voltage
CHARACTERISTICS (Note 4) VDC
Maximum Average Forward Rectified Current
Turn−On Delay Time
Peak Forward
Surge
Current 8.3 ms single half sine-wave
Rise
Time
superimposed on rated load (JEDEC method)
Turn−Off Delay Time
Typical Thermal Resistance (Note 2)
Fall Time
IO
td(on)
IFSM tr
RΘJA
CJ
Operating SOURCE−DRAIN
Temperature RangeDIODE CHARACTERISTICS
TJ
Typical Junction Capacitance (Note 1)
Storage Temperature
Range
Forward Diode
Voltage
CHARACTERISTICS
ReverseVoltage
Recovery
TimeDC
Maximum Forward
at 1.0A
td(off)
tf
pF
8.1
1.15
VGS
24 V,
13 = 5.0 V,
14VDS = 15
ID =
30
400.1 A 50
TSTG VSD
16
60
18
80
21
28
35
42
56
30
40
50
60
80
1.0
30
VGS = 4.5 V, VDD = 5.0 V,
ID = 0.1 A, RG = 50 W
40
120
-55 to +125
VGS = 0 V,
IS = 10 mA
0.15
10
0.32100
115
150
120
nC
200
Volts
0.23 70
105
140
Volts
150
200
Volts
100
Amps
16.7
47.9
Amps
ns
65.1
℃/W
64.2
PF
-55 to +150
TJ = 25°C - 65 to +175
0.65
TJ = 125°C
0.45
℃
0.7
℃
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Average Reverse Current at @T A=25℃
IR
tRR
Pulse Test:
pulse width v @T
300A=125℃
ms, duty cycle v 2%.
Rated DC3.Blocking
Voltage
VGS =0.50
0 V, dIS/dt = 8A/ms,
0.70
IS = 10 mA
4. Switching characteristics are independent of operating junction temperatures.
19.7
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
VRRM QGS 20
21
VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
14
0.85
0.5
10
0.9
ns0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N4003NLT1
FM1200-M+
Small
Signal
MOSFET
30V,0.56A,
Single, SOT-23
1.0A SURFACE
MOUNT
SCHOTTKY
BARRIER RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package
outline
(TJ = 25°C unless
otherwise noted)
TYPICAL PERFORMANCE CURVES
Features
• Batch process design, excellent power dissipation offers
better1.6
reverse leakage current and thermal resistance.
1.6
V to 5 V application in order to
• Low profileVsurface
GS = 10 mounted
optimize board space.
ID, DRAIN CURRENT (A)
MIL-STD-19500 /228
0.4
ID, DRAIN CURRENT (A)
4.5 V
• Low power loss, high efficiency.
current capability, low forward voltage drop.
• High 1.2
• High surge capability.
• Guardring for overvoltage protection.
high-speed switching.
• Ultra 0.8
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
4V
3.5 V
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Method 2026
ID = 0.2 A
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive 4load, derate current by 20%
RATINGS
0.4
0
Maximum Recurrent Peak Reverse Voltage
VRRM
0
Maximum RMS Voltage
VRMS
14
2.4 Voltage 2.8
Maximum DC Blocking
13
30
21
4
30
3.2
VDC 3.6 20
VGS, GATE−TO−SOURCE VOLTAGE (V)
Maximum Average Forward Rectified Current
IO
Figure 3. On−Resistance vs. Gate−to−Source
Peak Forward Surge Current 8.3 ms single half sine-wave
Voltage IFSM
1
TJ = 125°C
1.80
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
V = 4.5 V
TJ
1.60
TJ = 25°C
0.4
14
0.2
40
15
50
16
60
TJ = −55°C
18
10
80
100
28 0
35
42
56
ID = 0.3 A
GS
Storage Temperature Range
CHARACTERISTICS
1000
VGS = 0 V
-55 to +125
VF
1.20
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
1.00
50 0.1 60 0.2 80 0.3 100 0.4
ID, 1.0
DRAIN CURRENT (AMPS)
40
120
0.50
IR
2- Thermal Resistance From Junction to Ambient
0.60
−25
−50
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
2012-06
2012-10
105
0.5
150
140
0.6
200
Volts
Volts
Volts
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
TJ = 150°C
0.70
100
150
0.9
0.85
0.92
0.5
Volts
mAmps
10
TJ = 125°C
0.80and applied reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ
120
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
70
115
150
Figure 4. On−Resistance
vs. Drain Current and 30 Temperature
TSTG
1.40
0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
(NORMALIZED)
Dimensions in inches and (millimeters)
VGS = 10 V
0.6
40
RΘJA
Typical Thermal Resistance (Note 2)
NOTES:
5
0.031(0.8) Typ.
0.8
superimposed on rated load (JEDEC method)
0.040(1.0)
3 0.024(0.6) 4
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
1
0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
20
TJ = 125°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code 2
TJ = 25°C
0.071(1.8)
0.056(1.4)
Figure 2. Transfer Characteristics
6
Ratings at 25℃ ambient temperature unless otherwise specified.
0.012(0.3) Typ.
0.031(0.8) Typ.
10 : Indicated by cathode band
Polarity
•
• Mounting Position : Any
8 : Approximated 0.011 gram
• Weight
TJ = −55°C
0.146(3.7)
0.130(3.3)
0.8
2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1
0
rated flame retardant
• Epoxy : UL94-V0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated
terminals,
solderableCharacteristics
per MIL-STD-750
Figure
1. On−Region
SOD-123H
1.2
2.5 V
Mechanical
data
0
VDS ≥ 10 V
10
0
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N4003NLT1
FM1200-M+
Small
Signal
MOSFET
30V,0.56A,
SOT-23
1.0A SURFACE
MOUNT
SCHOTTKY
BARRIER Single,
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
TYPICAL
PERFORMANCE
CURVES (TJ = 25°C unless otherwise noted)
application
in order to
• Low profile surface mounted
optimize board space.
MIL-STD-19500 /228
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
power loss, high efficiency.
• Low50
TJ = 25°C
• High current capability, low forward voltage drop.
VGS = 0 V
• High surge capability.
40
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
30
• Lead-free parts meet environmental standards of
Ciss
• RoHS
20product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Coss
Mechanical data
10
Crss
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0
,
12per MIL-STD-750
0 :Plated 4terminals, 8solderable
16
• Terminals
5
0.146(3.7)
0.130(3.3)
TJ = 25°C
ID = 0.1 A
4
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
2
1
0
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
20
0.031(0.8) Typ.
0.4
0
VOLTAGE (V)
Method DRAIN−TO−SOURCE
2026
1.2
0.8
QG, TOTAL GATE CHARGE (nC)
• Polarity : Indicated
by cathode band
Figure 7. Capacitance Variation
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Figure 8. Gate−to−Source & Drain−to−Source
Voltage vs. Total Charge
MAXIMUM RATINGS AND 1ELECTRICAL CHARACTERISTICS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
0.01
VRRM
12
20
VRMS
VDC
13
30
14
40
15
50
14 TJ = 150°C
21
28
20
40
30
16
60
18
80
10
100
115
150
120
200
Volts
35 TJ = 25°C
42
56
70
105
140
Volts
50
80
100
150
200
Volts
60
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
30
0.001 IFSM
superimposed on rated load (JEDEC method)
0.8
0.4
0.6
Typical Thermal Resistance (Note 2)
RΘJA VSD, SOURCE−TO−DRAIN
VOLTAGE (V) 40
120
Typical Junction Capacitance (Note 1)
CJ
Figure
9.
Diode
Forward
-55
to
+125 Voltage vs. Current
Operating Temperature Range
TJ
Maximum Average Forward Rectified Current
IS, SOURCE CURRENT (A)
Ratings at 25℃ ambient temperature unless otherwise specified.
VGS = 0 V
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
UNIT
Storage Temperature Range
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N4003NLT1
FM1200-M+
Small
Signal
MOSFET
30V,0.56A,
SOT-23
1.0A SURFACE
MOUNT
SCHOTTKY
BARRIER Single,
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOD-123H
SOT-23
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.006(0.15)MIN.
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
.122(3.10)
• Lead-free parts meet environmental standards of
.106(2.70)
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.080(2.04)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
.070(1.78)
MAXIMUM RATINGS
AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
.020(0.50)
.012(0.30)
.055(1.40)
.035(0.89)
.086(2.10)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.110(2.80)
Halogen free product for packing code suffix "H"
Mechanical data
1.0
30
40
120
CJ
-55
to
+125and (millimeters)
TJ
Dimensions
in inches
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.50
0.037
0.95
IR
0.037
0.95
@T A=125℃
NOTES:
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
0.035
0.9
2012-06
2012-10
0.031
0.8
inches
mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Small Signal MOSFET 30V,0.56A, Single,
SOT-23
2N4003NLT1
Ordering Information: Device PN 2N4003NLT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10
WILLAS ELECTRONIC CORP.
Similar pages