1SS400WB SWITCHING DIODE WBFBP-02C Plastic-Encapsulate Diodes VOLTAGE 90 Volts CURRENT 0.1 Ampere DESCRIPTION Silicon Epitaxial Planar WBFBP-02C (1.0×0.6×0.5) unit: mm FEATURES Small Surface Mounting Type High Speed High Reliability with High Surge Current Handing Capability APPLICATION High Speed Switching for Detection For Portable Equipment:(i.e. Mobile Phone,MP3, MD,CD-ROM, DVD-ROM, Note Book PC, etc.) MARKING: 7 Moisture Sensitivity Level 1 Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Value VRM 90 V DC Reverse Voltage VR 80 V Peak Forward Current IFM 225 mA Mean Rectifying Current IO 100 mA Isurge 500 mA Peak Reverse Voltage Surge Current @t=1s Junction Temperature 2SHUDWLQJStorage Temperature Unit ℃ 150 Tj Tstg ℃ -55~+150 Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 1.2 V IF=100mA Reverse current IR 0.1 μA VR=80V Capacitance between terminals CT 3.0 pF VR=0.5V, f=1MHz Reverse recovery time trr 4 ns VR=6V,IF=10mA,RL=100Ω 2011.11 WILLAS ELECTRONIC CORP. 1SS400WB RATING CHARACTERISTIC CURVES ( 1SS400WB ) FIG. 1 - SURGE CURRENT CHARACTERISTICS FIG. 2 - FORWARD CHARACTERISTICS 1 1 1 0.1 10 100 1000 0 0.2 Ta =25 o C -25 o C o C 25 10u 10000 =1 100u Ta= 2 1m 5 oC 5 10m Ta 10 =7 20 100m Ta PULSE Single pulse 50 FORWARD CURRENT, (A) SURGE CURRENT, ISURGE (A) 100 0.4 0.6 0.8 1.0 1.2 PULSE WIDTH , TW (mS) FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - REVERSE CHARACTERISTICS 1.4 5 REVERSE CURRENT, (nA) JUNCTION CAPACITANCE, (pF) 10 2 1 0.5 0.2 0.1 0 2 4 6 8 10 12 14 125oC 10u 1u 75oC 100 25oC 10 1 0 40 50 60 70 80 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 3 REVERSE RECOVERY TIME, (nS) 30 20 REVERSE VOLTAGE, (V) 0.01µF D.U.T. VR=6V IRR=1/10IR PULSE GENERATOR OUTPUT 50 2 5 50 SAMPLING OSCILLOSCOPE 1 0 0 5 10 15 20 25 FORWARD CURRENT, (mA) 2011.11 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 1 S S 4 0 0 WTHRU B FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Ordering Information: Features • Batch process design, excellent power dissipation offers Device PN better reverse leakage current and thermal resistance. (1)application surface mounted • Low profile1SS400WB‐T G(2)‐WS in order to optimize board space. Note: (1) power Packing code, Tape&Reel Packing loss, high efficiency. • Low Pb Free Product Package outline Packing SOD-123H Tape&Reel: 10 Kpcs/Reel 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. capability, low forward voltage drop. • High current (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. ***Disclaimer*** , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. WILLAS reserves the right to make changes without notice to any product Method 2026 Dimensions in inches and (millimeters) specification herein, to make corrections, modifications, enhancements or other • Polarity : Indicated by cathode band Position : Any • Mounting changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified. which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% For capacitiveand do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 use of any product or circuit. 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS products are not designed, intended or authorized for use in medical, Amps Maximum Average Forward Rectified Current IO 1.0 life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps applications where a failure or malfunction of component or circuitry may directly superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA or indirectly cause injury or threaten a life without expressed written approval PF 120 Typical Junction Capacitance (Note 1) CJ of WILLAS. Customers using or selling WILLAS components for use in -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ 65 to +175 Storage Temperature Range TSTG ℃ such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures . FM1150-MH FM1200-MH UNIT CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2011.11 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.