1SS400CST5(SOD 923)2016.03

FM120-M+
1SS400CST5
WILLAS
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
SWITCHING Diodes
PbCOMPANY,
Free Product
LESHAN RADIO
LTD.
SOD-923
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Applications
.030(0.75)
• Low profile surface mounted application in order to
.033(0.85)
High optimize
speed switching
board space.
L1SS400GT1G
• Applications
0.146(3.7)
• Low power loss, high efficiency.
• Features
High speed switching
0.130(3.3)
0.012(0.3) Typ.
• High current capability, low forward voltage drop.
1) Extremely small surface mounting type. • Features
1
.013(0.34)
• High surge capability.
.017(0.43)
1) Extremely small surface mounting type.
2) High
Speed.for overvoltage protection.
• Guardring
2) High Speed.
0.071(1.8)
high-speed switching.
• Ultra
3) High
reliability.
3) High reliability.
0.056(1.4)
2
.037(0.95)
• Silicon epitaxial planar chip, metal silicon junction.
• Construction
.041(1.05)
• Construction
of epitaxial planar
• Lead-free parts meet environmental standardsSilicon
SOD - 723
/228
SiliconMIL-STD-19500
epitaxial planar
•
We
declare
that
the
material
of
product
• RoHS product for packing code suffix "G"
Pb-Free package is available
Halogen free product for packing code suffix "H" compliance with RoHS requirements.
1
2
RoHS
product for packing
CATHODE
ANODE
Mechanical
datacode suffix "G" • Device Marking
.012(0.30)
0.040(1.0)
L1SS400GT1G=3
Halogen free product for packing code suffix "H"
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Moisture Sensitivity Level 1
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
Dimensions in inches and (millimeters)
• Terminals :Plated terminals, solderable per MIL-STD-750
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Marking code: 3RU
Method 2026
Parameter
Symbol
Peak reverse voltage
DC reverse voltage
Peak forward current
.022(0.55)
.026(0.65)
.003(0.07)
.007(0.17)
.017(0.43)
.013(0.34)
.006(0.15)
.01(0.25)
.006(0.15)
.011(0.27)
Switching diode
VRM
VR
I FM
Limits
Unit
90
V
• Polarity : Indicated by cathode band
225
• Mounting Position : Any
Mean rectifying current
Maximum Ratings and Electrical Characteristics,
Single Diode [email protected]=25℃100
Surge current (1s)
I
500
• Weight : Approximated 0.011 gram
Junction temperature
Tj
125
Parameter
Storage temperature
T Limits – 55 ~ +125
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
at 25℃ voltage
ambient temperature unless otherwise
90
Peak
reverse
VRM specified.
Dimensions
in inches Vand (millimeters)
80
mA
surge
mA
mA
°C
stg
°C
O
Single phase half wave, 60Hz, resistive of inductive load.
capacitivevoltage
load, derate current by 20%
DC
VR
Forreverse
RATINGS
IFM
Maximum Recurrent Peak Reverse Voltage
Mean rectifying current
VRRM
20
30
VRMS
14
21
28
20
30
Maximum
DC Blocking
Voltage
Surge
current
(1s)
VDC
Isurge
Junction temperature
T j
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating/Storage
temperature
TSTG
Parameter
Symbol
Forward
voltage
Maximum Forward
Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
VF VF
IR
CT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2016-03
2012-06
Unit
V
Conditions
I F=100mA
V
–
100
16–
60
10
100
70
50
500
Shipping
60
80
100
-55~+125
1.0
30
mA
mA
U
115
150
Ω 120
200
V
105
140
V
150
200
V
A
℃
A
40
120
℃
℃
P
-55 to +150
Unit
mA
VR=6V , IF=10mA , RL=100
56
125
Max.
ns
42
-55 to +125
Typ.
18
80
35
Min.
4
- 65 to +175
Conditions
1/3 U
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
NOTES:
Capacitance
between terminals
Reverse
recovery
2- Thermal Resistance
Fromtime
Junction to Ambient
15
50
4000/Tape&Reel
3
TJ
A
40
Marking
L1SS400GT1G
CJ
CHARACTERISTICS
Device
RΘJA
Operating Temperature
Range=25℃
Electrical
Ratings @T
Reverse
current
Rated DC Blocking
Voltage
ORDRING INFORMATION
225
trr
IFSM
Typical Junction Capacitance (Note 1)
Reverse
12 recovery
13time
Tstg
Typical Thermal Resistance (Note 2)
Storage Temperature Range
IO
Max.
1.2
Reverse current
IR
–
–
0.1
µA
VR=80V
FM140-MH
FM180-MH
FM1150-MH FM1200-MH
FM120-MH
CapacitanceFM130-MH
between terminals
CT FM150-MH
– FM160-MH
0.72
3.0
pF FM1100-MH
VR=0.5V , f=1MHz
14
40
IO
Maximum RMS Voltage
V
Typ.
–
80
SYMBOL
Peak
forward current
Marking Code
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Min.
Forward voltage
VF
–
Unit
trr
IR
0.50 1.2
IF=100mA
0.85
V 0.70
0.5
0.9
V
VR=80V
0.1
μA
3.0
pF
VR=0.5V,f=1MHZ
4
ns
VR=6V,IF=10mA,RL=100Ω
10
0.92
m
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
1SS400CST5
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
ELECTRICAL CHARACTERISTIC
SOD-123+ CURVES
PACKAGE
(Ta = 25°C) Package outline
Features
1
Pb Free Product
1m
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
0.1m
100m
optimize board space.
REVERSE CURRENT : IR (A)
FORWARD CURRENT : IF (A)
• Low profile surface mounted application in order to
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
10m surge capability.
• High
• Guardring for overvoltage protection.
• Ultra high-speed switching.
1m
epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS
100µ product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
10µ
0.012(0.3) Typ.
1µ
0.071(1.8)
0.056(1.4)
100n
10n
Mechanical data
CAPACITANCE BETWEEN TERMINALS : CT (pF)
0
0.5
RATINGS
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
20
30
0.1
Maximum DC Blocking Voltage
0
2
4
6
8
VDC
12
10
14
100
superimposed on
rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
Junction50Capacitance
CJ
(Note 1)
SURGE CURRENT : Isurge (A)
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
28
35
42
56
70
105
140
V
200
V
0
20 100
30
60 10
80
150
FORWARD
CURRENT
:
I
F (mA)
1.0
Reverse recovery
time characteristics
30
0
50
-55 to +125
A
A
40
120
TJ
Operating Temperature Range
℃
-55 to +150
0.01µF
- 65 to D.U.T.
+175
TSTG
20
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
5kΩ FM180-MH FM1100-MH FM1150-MH FM1200-MH U
10
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
PULSE
0.50 GENERATOR0.70
OUTPUT 50Ω
IR
@T A=125℃
5
Rated DC Blocking Voltage
1
1
10
100
1000
50Ω
0.9
0.85 SAMPLING
OSCILLOSCOPE
0.92
V
m
Fig.6 Reverse recovery time (trr)
measurement circuit
2- Thermal Resistance From Junction to Ambient
0.1
0.5
10
2
1- Measured at 1 MHZ
and applied reverse voltage of 4.0 VDC.
1
Fig.4
Fig.3
Capacitance
between
Peak Forward Surge
Current
8.3 ms single half
sine-wave terminals
IFSM
NOTES:
2
40
Maximum Average Forward
Rectified VOLTAGE
Current
REVERSE
: VR (V) IO
0.031(0.8) Typ.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
0.2
Maximum Recurrent
Peak Reverse Voltage
REVERSE VOLTAGE : VR (V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
1 ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Typical
0.024(0.6)
100
120
80
Dimensions in inches and (millimeters)
Marking Code
60
3
REVERSE RECOVERY TIME : trr (ns)
40
Fig.2 Reverse characteristics
• Polarity : Indicated by cathode band
5
Position : Any
• Mounting
• Weight : Approximated 0.011 gram
2
20
0.031(0.8) Typ.
Method 2026
10
0.040(1.0)
1n
10µ
rated flame retardant
• Epoxy0 : UL94-V0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
plastic, SOD-123H
• Case : Molded
FORWARD
VOLTAGE : VF (V)
,
Forward
characteristics
• TerminalsFig.1
:Plated
terminals,
solderable per MIL-STD-750
10,000
PULSE WIDTH : TW (ms)
Fig.5 Surge current characteristics
2016-03
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
FM120-M+
1SS400CST5
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
Package outline
• Batch process design, excellent power dissipation offers
Ordering
Information:
thermal resistance.
better reverse
leakage current and
mounted application in order to
• Low profile surface
Device PN optimize board space.
(1)
Pb Free Product
SOD-123H
Packing 0.146(3.7)
Tape&Reel: 8 Kpcs/Reel 0.130(3.3)
1SS400CST5
efficiency.
G ‐WS loss, high
• Low power
High current capability, low forward voltage drop.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free
parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
***Disclaimer*** Method 2026
Dimensions in inches and (millimeters)
WILLAS reserves the right to make changes without notice to any product • Polarity
: Indicated by cathode band
Mounting Position : Any
• specification herein, to make corrections, modifications, enhancements or other • Weight : Approximated 0.011 gram
changes. WILLAS or anyone on its behalf assumes no responsibility or liability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
for any errors or inaccuracies. Data sheet specifications and its information Ratings at 25℃ ambient temperature unless otherwise specified.
contained are intended to provide a product description only. "Typical" parameters Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
which may be included on WILLAS data sheets and/ or specifications can For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
and do vary in different applications and actual performance may vary over time. Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum WILLAS does not assume any liability arising out of the application or Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximum use of any product or circuit. RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Am
Maximum Average Forward Rectified Current
IO
1.0
WILLAS products are not designed, intended or authorized for use in medical, Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
life‐saving implant or other applications intended for life‐sustaining or other related superimposed
on rated load (JEDEC method)
℃/
40
Typical Thermal
Resistance (Note 2)
RΘJA
applications where a failure or malfunction of component or circuitry may directly P
120
Typical Junction Capacitance (Note 1)
CJ
or indirectly cause injury or threaten a life without expressed written approval -55
to
+125
-55
to
+150
Operating Temperature Range
TJ
℃
- 65 to +175
Storage Temperature
Range
TSTG
℃
of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
Maximum Inc and its subsidiaries harmless against all claims, damages and expenditures
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
. 0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.5
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2016-03
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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