WILLAS FM120-M+ 66* THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product LESHAN RADIO COMPANY, LTD. Package outline Features Switching diode Switching diode • SOD - 723 SOD-123H .013(0.32) .009(0.25) .026(0.65) .021(0.55) L1SS400GT1G 0.146(3.7) 0.130(3.3) 1 0.012(0.3) Typ. .022(0.55) 2 0.071(1.8) 0.056(1.4) .017(0.45) .007(0.18) .003(0.08) Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order• to Applications • Applications optimize board space. .042(1.05) High speed switching loss, high efficiency. • Low .037(0.95) Highpower speed switching • Features • High current capability, low forward voltage drop. 1) Extremely small surface mounting type. • Features • High surge capability. 2) High Speed. 1) Extremely small surface mounting type. 3) High reliability. for overvoltage protection. • Guardring • Construction high-speed • Ultra 2) High Speed. switching. Silicon epitaxial planar • Silicon epitaxial planar chip, metal silicon junction. 3) High reliability. • Lead-free parts meet environmental standards of• We declare that the material of product MIL-STD-19500 /228 compliance with RoHS requirements. • Construction RoHS product for packing code suffix "G" • Silicon .057(1.45) Device Marking • epitaxial planar Halogen free product for packing code suffix "H" L1SS400GT1G=3 .053(1.35) SOD - 723 1 CATHODE 2 ANODE • Device Marking Mechanical data 1SS400G =3 rated or 7 flame retardant : UL94-V0 • Epoxy ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) • Pb-Free package available SOD-123H • Case : Molded plastic, is 0.031(0.8) Parameter Symbol Typ. , RoHS product for packing code suffix "G" Peak reverse voltage V • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) .006(0.15)MIN. Limits 0.031(0.8) Typ. Unit 90 V VR 80 V I FM 225 mA IO 100 mA Dimensions in inches and (millimeters) Dimensions in inches and (Millimeters) I surge 500 mA RM DC reverse voltage Halogen free product for packing code suffix "H" Method 2026 • Moisture Sensitivity Level 1 • Polarity : Indicated by cathode band Peak forward current Mean rectifying current Surge current (1s) • Mounting Position : Any • Weight : Approximated 0.011 gram ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Junction temperature Storage temperature Tj Tstg 125 – 55 ~ +125 °C °C ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Unit (Ta = 25°C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit Conditions Peak reverse voltage VRM 90 V V – – 1.2 V I =100mA Ratings at 25℃ ambient temperature unless otherwise specified.Forward voltage DC reverse voltage VR 80 V Reverse current I – – 0.1 µA V =80V Single phase half wave, 60Hz, resistive of inductive load. Capacitance between terminals – 0.72 3.0 pF V =0.5V , f=1MHz Peak forward current I FM 225 mA C VR=6V , I =10mA , R =100 Ω Reverse recovery time t – – 4 ns For capacitive load, derate current by 20% Mean rectifying current IO 100 mA RATINGS Surge current (1s) I surge SYMBOL FM120-MH 500 FM130-MH FM140-MH mA FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking CodeJunction temperature 12 13 14 15 16 18 10 115 120 Tj 125 °C ORDRING INFORMATION 20 30 40 50 60 80 100 150 200 Maximum Recurrent Reverse Voltage V V RRM T – 55 ~ +125 °C OperatingPeak Device Marking Shipping stg /Storage temperature F R T R rr VRMS Maximum RMS Voltage Maximum DC Blocking Voltage VDC ELECTRICAL (Ta = 25°C) Maximum Average ForwardCHARACTERISTICS Rectified Current IO F R Parameter Symbol Min. Peak Forward Surge Current 8.3 ms single half sine-wave Forward voltage V F IFSM – superimposed on rated load (JEDEC method) Reverse current IR – Typical Thermal Resistance (Note 2) terminals Capacitance between CT RΘJA – Typical Junction Capacitance (Note 1) Reverse recovery time trr CJ – Operating Temperature Range TJ Storage Temperature Range 14 21 L1SS400GT1G 20 3 30 Typ. Max. – 1.2 – 0.1 3.0 0.72 4 – -55 to +125 F L 28 35 42 4000/Tape&Reel 56 70 105 140 V 40 50 80 100 150 200 V Unit V µA pF ns 60 1.0 Conditions I F=100mA 30 VR=80V VR=0.5V 40 , f=1MHz 120 VR=6V ,IF=10mA , RL=100 Ω -55 to +150 A A ℃ 1/3 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 10 0.92 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-10 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP WILLAS FM120-M+ 66* THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ELECTRICAL CHARACTERISTIC CURVES SOD-123+ PACKAGE Pb Free Product (Ta = 25°C) Package outline Features 1 1m • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FORWARD CURRENT : IF (A) 100m REVERSE CURRENT : IR (A) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10m capability. • High surge • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon1mepitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 RoHS100µ product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) 100n 10n 1n 20 40 Method 2026 0.031(0.8) Typ. 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.5 RATINGS 12 20 VRRM 13 30 14 40 VRMS 14 21 28 0.1 Maximum DC Blocking Voltage VDC 10 20 30 40 0 2 1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum RMS Voltage 4 6 8 Maximum Average Forward Rectified Current IO REVERSE VOLTAGE : VR (V) 12 14 15 50 16 60 35 0 500 42 50 Capacitance SURGE CURRENT : Isurge (A) -55 to +125 TJ Operating Temperature Range Storage Temperature Range TSTG 20 CHARACTERISTICS @T A=125℃ IR 30 140 200 Volts Amps Amps ℃/W PF -55 to +150 0.01µF D.U.T. - 65 to +175 ℃ ℃ 1 10 100 0.5 0.85 50Ω SAMPLING 0.9 OSCILLOSCOPE 0.92 Volts mAmp Fig.6 Reverse recovery time (trr) measurement circuit 2- Thermal Resistance From Junction to Ambient 1 150 10 1- Measured at 1 MHZ 2and applied reverse voltage of 4.0 VDC. 0.1 105 Volts Volts PULSE GENERATOR 0.50 0.70 OUTPUT 50Ω VF Maximum Average Reverse Current at @T A=25℃ 70 120 200 FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH5kΩ 10 Maximum Forward Voltage at 1.0A DC 5 Rated DC Blocking Voltage 40 120 CJ (Note 1) 56 115 150 30 RΘJA 10 100 10 80 20 60 100 FORWARD CURRENT : I F (mA) 1.0 superimposed on rated 100 load (JEDEC method) Typical Thermal Resistance (Note 2) 18 80 Fig.4 Reverse recovery time characteristics between terminals Peak Forward SurgeFig.3 CurrentCapacitance 8.3 ms single half sine-wave IFSM NOTES: 120 Dimensions in inches and (millimeters) 2 0.2 Maximum Recurrent Peak Reverse Voltage 100 3 Marking Code 0.040(1.0) 0.024(0.6) 80 Fig.2 Reverse characteristics Ratings at 25℃ ambient temperature unless otherwise specified. 1 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Typical Junction 60 REVERSE VOLTAGE : VR (V) 0.031(0.8) Typ. REVERSE RECOVERY TIME : trr (ns) CAPACITANCE BETWEEN TERMINALS : CT (pF) 0 • Polarity : Indicated by cathode band • Mounting5 Position : Any • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 1µ 10µ 0.146(3.7) 0.130(3.3) 10µ Mechanical data rated flame retardant • Epoxy : UL94-V0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 SOD-123H • Case : Molded plastic, FORWARD VOLTAGE : VF (V) , Fig.1terminals, Forwardsolderable characteristics • Terminals :Plated per MIL-STD-750 10 SOD-123H 0.1m • Low profile surface mounted application in order to 1000 10,000 PULSE WIDTH : TW (ms) Fig.5 Surge current characteristics 2012-10 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 66* THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Ordering Information: FeaturesDevice PN (1) excellent process design, • Batch1SS400G‐T G(2)‐WS power dissipation offers better reverse leakage current and thermal resistance. Note: (1) profile surface mounted application in order to • Low Packing code, Tape&Reel Packing Pb Free Produc Package Packing outline Tape&Reel: 4 Kpcs/Reel SOD-123H optimize board space. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” 0.146(3.7) power loss, high efficiency. • Low 0.130(3.3) High current capability, low forward voltage drop. • • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H ***Disclaimer*** , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. WILLAS reserves the right to make changes without notice to any product Method 2026 specification herein, to make corrections, modifications, enhancements or other Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified. which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load. and do vary in different applications and actual performance may vary over time. load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 use of any product or circuit. 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM RMS Voltage 14 21 28 35 42 56 70 105 140 Maximum VRMS Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC WILLAS products are not designed, intended or authorized for use in medical, Maximum Average Forward Rectified Current IO 1.0 life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave FSM 30 I applications where a failure or malfunction of component or circuitry may directly superimposed on rated load (JEDEC method) 40 Typicalor indirectly cause injury or threaten a life without expressed written approval Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ of WILLAS. Customers using or selling WILLAS components for use in -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storagesuch applications do so at their own risk and shall agree to fully indemnify WILLAS Temperature Range TSTG Inc and its subsidiaries harmless against all claims, damages and expenditures . CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-10 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP