1SS400G(SOD 723)

WILLAS
FM120-M+
66*
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
LESHAN RADIO COMPANY, LTD.
Package outline
Features
Switching
diode Switching diode
•
SOD - 723
SOD-123H
.013(0.32)
.009(0.25)
.026(0.65)
.021(0.55)
L1SS400GT1G
0.146(3.7)
0.130(3.3)
1
0.012(0.3) Typ.
.022(0.55)
2
0.071(1.8)
0.056(1.4)
.017(0.45)
.007(0.18)
.003(0.08)
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order• to
Applications
• Applications
optimize board space.
.042(1.05)
High speed switching
loss,
high efficiency.
• Low
.037(0.95)
Highpower
speed
switching
• Features
• High current capability, low forward voltage drop. 1) Extremely small surface mounting type.
• Features
• High surge capability.
2) High Speed.
1) Extremely
small surface
mounting type. 3) High reliability.
for overvoltage
protection.
• Guardring
• Construction
high-speed
• Ultra
2) High
Speed. switching.
Silicon epitaxial planar
• Silicon epitaxial planar chip, metal silicon junction.
3) High reliability.
• Lead-free parts meet environmental standards of• We declare that the material of product
MIL-STD-19500 /228
compliance with RoHS requirements.
• Construction
RoHS product for packing code suffix "G"
• Silicon
.057(1.45)
Device
Marking
•
epitaxial planar
Halogen free product for packing code suffix "H"
L1SS400GT1G=3
.053(1.35)
SOD - 723
1
CATHODE
2
ANODE
• Device Marking
Mechanical
data
1SS400G
=3 rated
or 7 flame retardant
: UL94-V0
• Epoxy
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
•
Pb-Free
package
available
SOD-123H
• Case : Molded plastic, is
0.031(0.8)
Parameter
Symbol Typ.
,
RoHS product for packing code suffix "G"
Peak reverse voltage
V
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
.006(0.15)MIN.
Limits
0.031(0.8) Typ.
Unit
90
V
VR
80
V
I FM
225
mA
IO
100
mA
Dimensions
in inches
and (millimeters)
Dimensions
in inches
and
(Millimeters)
I surge
500
mA
RM
DC reverse voltage
Halogen free product for packing code suffix "H"
Method 2026
• Moisture Sensitivity Level 1
• Polarity : Indicated by cathode band
Peak forward current
Mean rectifying current
Surge current (1s)
• Mounting Position : Any
• Weight
: Approximated 0.011 gram
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Junction temperature
Storage temperature
Tj
Tstg
125
– 55 ~ +125
°C
°C
ELECTRICAL
CHARACTERISTICS
Parameter
Symbol
Limits
Unit (Ta = 25°C)
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Peak reverse voltage
VRM
90
V
V
–
–
1.2
V
I =100mA
Ratings at 25℃ ambient temperature unless otherwise specified.Forward voltage
DC reverse voltage
VR
80
V
Reverse current
I
–
–
0.1
µA
V =80V
Single phase half wave, 60Hz, resistive of inductive load.
Capacitance between terminals
–
0.72
3.0
pF
V =0.5V , f=1MHz
Peak forward current
I FM
225
mA C
VR=6V , I =10mA , R =100 Ω
Reverse recovery time
t
–
–
4
ns
For capacitive load, derate current by 20%
Mean rectifying current
IO
100
mA
RATINGS
Surge current
(1s)
I surge SYMBOL FM120-MH
500 FM130-MH FM140-MH
mA FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking CodeJunction temperature
12
13
14
15
16
18
10
115
120
Tj
125
°C
ORDRING INFORMATION
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Reverse
Voltage
V
V
RRM
T
–
55
~
+125
°C
OperatingPeak
Device
Marking
Shipping
stg
/Storage temperature
F
R
T
R
rr
VRMS
Maximum RMS Voltage
Maximum DC Blocking Voltage
VDC
ELECTRICAL
(Ta = 25°C)
Maximum Average
ForwardCHARACTERISTICS
Rectified Current
IO
F
R
Parameter
Symbol Min.
Peak Forward Surge
Current
8.3 ms single half sine-wave
Forward
voltage
V F IFSM –
superimposed on
rated load
(JEDEC method)
Reverse
current
IR
–
Typical Thermal
Resistance
(Note 2) terminals
Capacitance between
CT RΘJA –
Typical Junction
Capacitance
(Note
1)
Reverse
recovery
time
trr CJ
–
Operating Temperature Range
TJ
Storage Temperature Range
14
21
L1SS400GT1G
20
3
30
Typ.
Max.
–
1.2
–
0.1
3.0
0.72
4
–
-55 to +125
F
L
28
35
42
4000/Tape&Reel
56
70
105
140
V
40
50
80
100
150
200
V
Unit
V
µA
pF
ns
60
1.0
Conditions
I F=100mA
30
VR=80V
VR=0.5V 40
, f=1MHz
120
VR=6V ,IF=10mA , RL=100 Ω
-55 to +150
A
A
℃
1/3
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
10
0.92
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
FM120-M+
66*
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
ELECTRICAL CHARACTERISTIC
CURVES
SOD-123+ PACKAGE
Pb Free Product
(Ta = 25°C)
Package outline
Features
1
1m
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FORWARD CURRENT : IF (A)
100m
REVERSE CURRENT : IR (A)
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
10m
capability.
• High surge
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon1mepitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS100µ
product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
100n
10n
1n
20
40
Method 2026
0.031(0.8) Typ.
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.5
RATINGS
12
20
VRRM
13
30
14
40
VRMS
14
21
28
0.1
Maximum DC Blocking
Voltage
VDC
10
20
30
40
0
2
1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum RMS Voltage
4
6
8
Maximum Average Forward Rectified
Current
IO
REVERSE
VOLTAGE : VR (V)
12
14
15
50
16
60
35
0
500
42
50
Capacitance
SURGE CURRENT : Isurge (A)
-55 to +125
TJ
Operating Temperature Range
Storage Temperature Range
TSTG
20
CHARACTERISTICS
@T A=125℃
IR
30
140
200
Volts
Amps
Amps
℃/W
PF
-55 to +150
0.01µF
D.U.T.
- 65 to +175
℃
℃
1
10
100
0.5
0.85
50Ω
SAMPLING
0.9
OSCILLOSCOPE
0.92
Volts
mAmp
Fig.6 Reverse recovery time (trr)
measurement circuit
2- Thermal Resistance From Junction to Ambient
1
150
10
1- Measured at 1 MHZ 2and applied reverse voltage of 4.0 VDC.
0.1
105
Volts
Volts
PULSE GENERATOR
0.50
0.70
OUTPUT 50Ω
VF
Maximum Average Reverse Current at @T A=25℃
70
120
200
FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH5kΩ
10
Maximum Forward Voltage at 1.0A DC
5
Rated DC Blocking Voltage
40
120
CJ
(Note 1)
56
115
150
30
RΘJA
10
100
10 80
20
60
100
FORWARD
CURRENT
:
I F (mA)
1.0
superimposed on rated
100 load (JEDEC method)
Typical Thermal Resistance (Note 2)
18
80
Fig.4 Reverse recovery time characteristics
between terminals
Peak Forward SurgeFig.3
CurrentCapacitance
8.3 ms single half sine-wave
IFSM
NOTES:
120
Dimensions in inches and (millimeters)
2
0.2
Maximum Recurrent
Peak Reverse Voltage
100
3
Marking Code
0.040(1.0)
0.024(0.6)
80
Fig.2 Reverse characteristics
Ratings at 25℃ ambient
temperature unless otherwise specified.
1
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Typical Junction
60
REVERSE VOLTAGE : VR (V)
0.031(0.8) Typ.
REVERSE RECOVERY TIME : trr (ns)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
0
• Polarity : Indicated by cathode band
• Mounting5 Position : Any
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
1µ
10µ
0.146(3.7)
0.130(3.3)
10µ
Mechanical data
rated flame retardant
• Epoxy : UL94-V0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
SOD-123H
• Case : Molded plastic,
FORWARD
VOLTAGE : VF (V)
,
Fig.1terminals,
Forwardsolderable
characteristics
• Terminals :Plated
per MIL-STD-750
10
SOD-123H
0.1m
• Low profile surface mounted application in order to
1000
10,000
PULSE WIDTH : TW (ms)
Fig.5 Surge current characteristics
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
66*
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Ordering Information: FeaturesDevice PN (1) excellent
process design,
• Batch1SS400G‐T
G(2)‐WS power dissipation offers
better reverse leakage current and thermal resistance.
Note: (1)
profile surface mounted application in order to
• Low Packing code, Tape&Reel Packing
Pb Free Produc
Package
Packing outline
Tape&Reel: 4 Kpcs/Reel SOD-123H
optimize board space.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” 0.146(3.7)
power loss, high efficiency.
• Low
0.130(3.3)
High
current
capability,
low
forward
voltage
drop.
•
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
***Disclaimer***
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
WILLAS reserves the right to make changes without notice to any product Method 2026
specification herein, to make corrections, modifications, enhancements or other Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified.
which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load.
and do vary in different applications and actual performance may vary over time. load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
WILLAS does not assume any liability arising out of the application or Marking Code
12
13
14
15
16
18
10
115
120
use of any product or circuit. 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
RMS Voltage
14
21
28
35
42
56
70
105
140
Maximum
VRMS
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
V
DC
WILLAS products are not designed, intended or authorized for use in medical, Maximum Average Forward Rectified Current
IO
1.0
life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave
FSM
30
I
applications where a failure or malfunction of component or circuitry may directly superimposed on rated load (JEDEC method)
40
Typicalor indirectly cause injury or threaten a life without expressed written approval Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
of WILLAS. Customers using or selling WILLAS components for use in -55
to
+125
-55 to +150
Operating Temperature Range
TJ
65
to
+175
Storagesuch applications do so at their own risk and shall agree to fully indemnify WILLAS Temperature Range
TSTG
Inc and its subsidiaries harmless against all claims, damages and expenditures
. CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
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