1SS400(SOD 523)

FM120-M+
1SS400
WILLAS
THRU
LESHAN RADIO COMPANY, LTD.
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Switching diode
SWITCHING Diodes
SOD-523
Package outline
L1SS400GT1G
.035(0.90)
.028(0.70)
• Applications
.014(0.35)
.009(0.25)
Features
SOD-123H
0.146(3.7)
0.130(3.3)
1
0.012(0.3) Typ.
2
.028(0.70)
SOD
- 723
.020(0.50)
.008(0.20)
.002(0.05)
offers
• Batch process design, excellent power dissipation
High speed switching
better reverse leakage current and thermal resistance.
.051(1.30)
• Applications
• Features
.043(1.10)
• Low profile surface mounted application in order to
1) Extremely small surface mounting type.
High optimize
speed switching
board space.
2) High Speed.
• Low power loss, high efficiency.
• Features
3) High reliability.
• High current capability, low forward voltage drop.
1) Extremely small surface mounting type. • Construction
• High surge capability.
Silicon epitaxial planar
2) High
Speed.for overvoltage protection.
• Guardring
•
We declare that the material of product
high-speed switching.
• Ultra
3) High
reliability.
compliance with RoHS requirements.
• Silicon epitaxial planar chip, metal silicon junction.
• Construction
.067(1.70)
of Marking
• Lead-free parts meet environmental standards
• Device
.059(1.50)
/228
SiliconMIL-STD-19500
epitaxial planar
L1SS400GT1G=3
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
1
CATHODE
2
ANODE
Halogen
free product for packing code suffix "H"
ORDRING
INFORMATION
Mechanical
data
Device
Marking
ShippingABSOLUTE
.006(0.15)MIN.
MAXIMUM RATINGS (Ta = 25°C)
0.040(1.0)
0.024(0.6)
Parameter
Symbol
Limits
Unit
Epoxy : UL94-V0 rated flame retardant
3000/Tape&Reel
1SS400-TG
A
Peak reverse voltage
VRM
90
V
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
DC reverse voltage
VR 0.031(0.8) Typ. 80
V
,
Peak forward current
I FM
225
mA
Terminals :Plated terminals, solderable per MIL-STD-750
Dimensions in inches and (Millimeters)
Mean rectifying current
IO
100
mA
Method 2026
Surge current (1s)
I surge
500
mA
Junction temperature
Tj
125
°C
Dimensions
in inches
and (millimeters)
Polarity : Indicated by cathode band
Storage temperature
Tstg
– 55 ~ +125
°C
•
•
Pb-Free package is available
• product for packing code suffix "G"
RoHS
Halogen free product for packing code suffix "H"
•
• Mounting Position : Any
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
• Weight : Approximated 0.011 gram
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol
Min.
Parameter
Symbol Parameter
Limits
Forward voltage
V
–
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Reverse current
I
–
Ratings
at 25℃ voltage
ambient temperature unless otherwise
90 –
Peak
reverse
VRM specified.
Capacitance between terminals
C
F
R
T
Single phase half wave, 60Hz, resistive of inductive load.
capacitivevoltage
load, derate current by 20%
DC
VR
Forreverse
RATINGS
IFM
Mean rectifying current
VRMS
Maximum
DC Blocking
Voltage
Surge
current
(1s)
VDC
Isurge
Junction temperature
T j
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating/Storage
temperature
21
20
30
–
4
ns
VR=6V , IF=10mA , RL=100
V
Ω
V
TSTG
Symbol
CHARACTERISTICS
Forward
voltage
Maximum Forward
Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
28
16
60
18
80
10
100
35
42
56
70
50
500
60
80
100
100
4000/Tape&Reel
40
1.0
30
-55~+125
-55 to +125
Min.
Typ.
Unit
mA
120
200
V
105
140
V
150
200
V
A
A
℃
℃
1/3
-55 to +150
Max.
mA
115
150
℃
40
120
mA
P
- 65 to +175
Conditions
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF VF
IR
NOTES:
Capacitance
between terminals
CT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse
recovery
2- Thermal Resistance
Fromtime
Junction to Ambient
3
15
50
Shipping
125
TJ
A
225
IO
CJ
Parameter
2012-06
14
L1SS400GT1G
RΘJA
Operating Temperature
Range=25℃
Electrical
Ratings @T
2012-10
13
14
Marking
30
40
IFSM
Typical Junction Capacitance (Note 1)
12
20
Device
Tstg
Typical Thermal Resistance (Note 2)
Reverse
current
Rated DC Blocking
Voltage
Conditions
I F=100mA
VR=80V
VR=0.5V , f=1MHz
–
ORDRING INFORMATION
IO
Maximum RMS Voltage
Unit
V
µA
pF
80
VRRM
Maximum Recurrent Peak Reverse Voltage
Storage Temperature Range
trr
Max.
1.2
0.1
3.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Peak
forward current
Marking Code
Reverse recovery time
Unit
Typ.
–
–
0.72
trr
IR
0.50 1.2
IF=100mA
0.85
V 0.70
0.5
0.9
V
0.1
μA
3.0
pF
VR=0.5V,f=1MHZ
4
ns
VR=6V,IF=10mA,RL=100Ω
10
0.92
VR=80V
m
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
1SS400
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
ELECTRICAL CHARACTERISTIC
SOD-123+ CURVES
PACKAGE
(Ta = 25°C) Package outline
Features
1
Pb Free Product
1m
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
0.1m
100m
optimize board space.
REVERSE CURRENT : IR (A)
FORWARD CURRENT : IF (A)
• Low profile surface mounted application in order to
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
10m surge capability.
• High
• Guardring for overvoltage protection.
• Ultra high-speed switching.
1m
epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS
100µ product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
10µ
0.012(0.3) Typ.
1µ
0.071(1.8)
0.056(1.4)
100n
10n
Mechanical data
CAPACITANCE BETWEEN TERMINALS : CT (pF)
0
0.5
RATINGS
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
20
30
0.1
Maximum DC Blocking Voltage
0
2
4
6
8
VDC
12
10
14
100
superimposed on
rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
Junction50Capacitance
CJ
(Note 1)
SURGE CURRENT : Isurge (A)
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
28
35
42
56
70
105
140
V
200
V
0
20 100
30
60 10
80
150
FORWARD
CURRENT
:
I
F (mA)
1.0
Reverse recovery
time characteristics
30
0
50
-55 to +125
A
A
40
120
TJ
Operating Temperature Range
℃
-55 to +150
0.01µF
- 65 to D.U.T.
+175
TSTG
20
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
5kΩ FM180-MH FM1100-MH FM1150-MH FM1200-MH U
10
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
PULSE
0.50 GENERATOR0.70
OUTPUT 50Ω
IR
@T A=125℃
5
Rated DC Blocking Voltage
1
1
10
100
1000
50Ω
0.9
0.85 SAMPLING
OSCILLOSCOPE
0.92
V
m
Fig.6 Reverse recovery time (trr)
measurement circuit
2- Thermal Resistance From Junction to Ambient
0.1
0.5
10
2
1- Measured at 1 MHZ
and applied reverse voltage of 4.0 VDC.
1
Fig.4
Fig.3
Capacitance
between
Peak Forward Surge
Current
8.3 ms single half
sine-wave terminals
IFSM
NOTES:
2
40
Maximum Average Forward
Rectified VOLTAGE
Current
REVERSE
: VR (V) IO
0.031(0.8) Typ.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
0.2
Maximum Recurrent
Peak Reverse Voltage
REVERSE VOLTAGE : VR (V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
1 ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Typical
0.024(0.6)
100
120
80
Dimensions in inches and (millimeters)
Marking Code
60
3
REVERSE RECOVERY TIME : trr (ns)
40
Fig.2 Reverse characteristics
• Polarity : Indicated by cathode band
5
Position : Any
• Mounting
• Weight : Approximated 0.011 gram
2
20
0.031(0.8) Typ.
Method 2026
10
0.040(1.0)
1n
10µ
rated flame retardant
• Epoxy0 : UL94-V0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
plastic, SOD-123H
• Case : Molded
FORWARD
VOLTAGE : VF (V)
,
Forward
characteristics
• TerminalsFig.1
:Plated
terminals,
solderable per MIL-STD-750
10,000
PULSE WIDTH : TW (ms)
Fig.5 Surge current characteristics
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
FM120-M+
1SS400
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Ordering
surface mounted application
in order to
• Low profile Information:
SOD-123H
optimize board space.
Device PN Packing 0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
(1) (2)
1SS400‐T
G
‐WS Tape&Reel: 3 Kpcs/Reel • High current capability, low forward voltage drop.
capability.
• High surge
Note: (1)
Packing code, Tape&Reel Packing
• Guardring for overvoltage protection.
high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free
parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
***Disclaimer***
• Mounting Position : Any
WILLAS reserves the right to make changes without notice to any product • Weight
: Approximated 0.011 gram
specification herein, to make corrections, modifications, enhancements or other MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings changes. WILLAS or anyone on its behalf assumes no responsibility or liability at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
for any errors or inaccuracies. Data sheet specifications and its information For capacitive load, derate current by 20%
contained are intended to provide a product description only. "Typical" parameters SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
and do vary in different applications and actual performance may vary over time. V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
V
MaximumWILLAS does not assume any liability arising out of the application or DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
A
Maximumuse of any product or circuit. Average Forward Rectified Current
IO
1.0
Peak Forward
Surge Current 8.3 ms single half sine-wave IFSM
30
A
superimposed on rated load (JEDEC method)
WILLAS products are not designed, intended or authorized for use in medical, ℃
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction
Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125
-55 to +150
Operating Temperature Range
TJ
applications where a failure or malfunction of component or circuitry may directly - 65 to +175
Storage Temperature Range
TSTG
or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximumof WILLAS. Customers using or selling WILLAS components for use in Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximumsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Average Reverse Current at @T A=25℃
IR
m
10
@T A=125℃
Rated DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
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