FM120-M+ 1SS400 WILLAS THRU LESHAN RADIO COMPANY, LTD. FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Switching diode SWITCHING Diodes SOD-523 Package outline L1SS400GT1G .035(0.90) .028(0.70) • Applications .014(0.35) .009(0.25) Features SOD-123H 0.146(3.7) 0.130(3.3) 1 0.012(0.3) Typ. 2 .028(0.70) SOD - 723 .020(0.50) .008(0.20) .002(0.05) offers • Batch process design, excellent power dissipation High speed switching better reverse leakage current and thermal resistance. .051(1.30) • Applications • Features .043(1.10) • Low profile surface mounted application in order to 1) Extremely small surface mounting type. High optimize speed switching board space. 2) High Speed. • Low power loss, high efficiency. • Features 3) High reliability. • High current capability, low forward voltage drop. 1) Extremely small surface mounting type. • Construction • High surge capability. Silicon epitaxial planar 2) High Speed.for overvoltage protection. • Guardring • We declare that the material of product high-speed switching. • Ultra 3) High reliability. compliance with RoHS requirements. • Silicon epitaxial planar chip, metal silicon junction. • Construction .067(1.70) of Marking • Lead-free parts meet environmental standards • Device .059(1.50) /228 SiliconMIL-STD-19500 epitaxial planar L1SS400GT1G=3 • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) 1 CATHODE 2 ANODE Halogen free product for packing code suffix "H" ORDRING INFORMATION Mechanical data Device Marking ShippingABSOLUTE .006(0.15)MIN. MAXIMUM RATINGS (Ta = 25°C) 0.040(1.0) 0.024(0.6) Parameter Symbol Limits Unit Epoxy : UL94-V0 rated flame retardant 3000/Tape&Reel 1SS400-TG A Peak reverse voltage VRM 90 V Case : Molded plastic, SOD-123H 0.031(0.8) Typ. DC reverse voltage VR 0.031(0.8) Typ. 80 V , Peak forward current I FM 225 mA Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (Millimeters) Mean rectifying current IO 100 mA Method 2026 Surge current (1s) I surge 500 mA Junction temperature Tj 125 °C Dimensions in inches and (millimeters) Polarity : Indicated by cathode band Storage temperature Tstg – 55 ~ +125 °C • • Pb-Free package is available • product for packing code suffix "G" RoHS Halogen free product for packing code suffix "H" • • Mounting Position : Any Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ • Weight : Approximated 0.011 gram ELECTRICAL CHARACTERISTICS (Ta = 25°C) Symbol Min. Parameter Symbol Parameter Limits Forward voltage V – MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Reverse current I – Ratings at 25℃ voltage ambient temperature unless otherwise 90 – Peak reverse VRM specified. Capacitance between terminals C F R T Single phase half wave, 60Hz, resistive of inductive load. capacitivevoltage load, derate current by 20% DC VR Forreverse RATINGS IFM Mean rectifying current VRMS Maximum DC Blocking Voltage Surge current (1s) VDC Isurge Junction temperature T j Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating/Storage temperature 21 20 30 – 4 ns VR=6V , IF=10mA , RL=100 V Ω V TSTG Symbol CHARACTERISTICS Forward voltage Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 28 16 60 18 80 10 100 35 42 56 70 50 500 60 80 100 100 4000/Tape&Reel 40 1.0 30 -55~+125 -55 to +125 Min. Typ. Unit mA 120 200 V 105 140 V 150 200 V A A ℃ ℃ 1/3 -55 to +150 Max. mA 115 150 ℃ 40 120 mA P - 65 to +175 Conditions SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF VF IR NOTES: Capacitance between terminals CT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse recovery 2- Thermal Resistance Fromtime Junction to Ambient 3 15 50 Shipping 125 TJ A 225 IO CJ Parameter 2012-06 14 L1SS400GT1G RΘJA Operating Temperature Range=25℃ Electrical Ratings @T 2012-10 13 14 Marking 30 40 IFSM Typical Junction Capacitance (Note 1) 12 20 Device Tstg Typical Thermal Resistance (Note 2) Reverse current Rated DC Blocking Voltage Conditions I F=100mA VR=80V VR=0.5V , f=1MHz – ORDRING INFORMATION IO Maximum RMS Voltage Unit V µA pF 80 VRRM Maximum Recurrent Peak Reverse Voltage Storage Temperature Range trr Max. 1.2 0.1 3.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Peak forward current Marking Code Reverse recovery time Unit Typ. – – 0.72 trr IR 0.50 1.2 IF=100mA 0.85 V 0.70 0.5 0.9 V 0.1 μA 3.0 pF VR=0.5V,f=1MHZ 4 ns VR=6V,IF=10mA,RL=100Ω 10 0.92 VR=80V m WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 1SS400 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ELECTRICAL CHARACTERISTIC SOD-123+ CURVES PACKAGE (Ta = 25°C) Package outline Features 1 Pb Free Product 1m • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 0.1m 100m optimize board space. REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) • Low profile surface mounted application in order to • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10m surge capability. • High • Guardring for overvoltage protection. • Ultra high-speed switching. 1m epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 RoHS 100µ product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 10µ 0.012(0.3) Typ. 1µ 0.071(1.8) 0.056(1.4) 100n 10n Mechanical data CAPACITANCE BETWEEN TERMINALS : CT (pF) 0 0.5 RATINGS VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 20 30 0.1 Maximum DC Blocking Voltage 0 2 4 6 8 VDC 12 10 14 100 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) RΘJA Junction50Capacitance CJ (Note 1) SURGE CURRENT : Isurge (A) Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V 28 35 42 56 70 105 140 V 200 V 0 20 100 30 60 10 80 150 FORWARD CURRENT : I F (mA) 1.0 Reverse recovery time characteristics 30 0 50 -55 to +125 A A 40 120 TJ Operating Temperature Range ℃ -55 to +150 0.01µF - 65 to D.U.T. +175 TSTG 20 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 5kΩ FM180-MH FM1100-MH FM1150-MH FM1200-MH U 10 VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ PULSE 0.50 GENERATOR0.70 OUTPUT 50Ω IR @T A=125℃ 5 Rated DC Blocking Voltage 1 1 10 100 1000 50Ω 0.9 0.85 SAMPLING OSCILLOSCOPE 0.92 V m Fig.6 Reverse recovery time (trr) measurement circuit 2- Thermal Resistance From Junction to Ambient 0.1 0.5 10 2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1 Fig.4 Fig.3 Capacitance between Peak Forward Surge Current 8.3 ms single half sine-wave terminals IFSM NOTES: 2 40 Maximum Average Forward Rectified VOLTAGE Current REVERSE : VR (V) IO 0.031(0.8) Typ. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 0.2 Maximum Recurrent Peak Reverse Voltage REVERSE VOLTAGE : VR (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ 1 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Typical 0.024(0.6) 100 120 80 Dimensions in inches and (millimeters) Marking Code 60 3 REVERSE RECOVERY TIME : trr (ns) 40 Fig.2 Reverse characteristics • Polarity : Indicated by cathode band 5 Position : Any • Mounting • Weight : Approximated 0.011 gram 2 20 0.031(0.8) Typ. Method 2026 10 0.040(1.0) 1n 10µ rated flame retardant • Epoxy0 : UL94-V0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 plastic, SOD-123H • Case : Molded FORWARD VOLTAGE : VF (V) , Forward characteristics • TerminalsFig.1 :Plated terminals, solderable per MIL-STD-750 10,000 PULSE WIDTH : TW (ms) Fig.5 Surge current characteristics 2012-10 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP WILLAS FM120-M+ 1SS400 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Ordering surface mounted application in order to • Low profile Information: SOD-123H optimize board space. Device PN Packing 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) (1) (2) 1SS400‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • High current capability, low forward voltage drop. capability. • High surge Note: (1) Packing code, Tape&Reel Packing • Guardring for overvoltage protection. high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band ***Disclaimer*** • Mounting Position : Any WILLAS reserves the right to make changes without notice to any product • Weight : Approximated 0.011 gram specification herein, to make corrections, modifications, enhancements or other MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings changes. WILLAS or anyone on its behalf assumes no responsibility or liability at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information For capacitive load, derate current by 20% contained are intended to provide a product description only. "Typical" parameters SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM and do vary in different applications and actual performance may vary over time. V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS V MaximumWILLAS does not assume any liability arising out of the application or DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC A Maximumuse of any product or circuit. Average Forward Rectified Current IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 30 A superimposed on rated load (JEDEC method) WILLAS products are not designed, intended or authorized for use in medical, ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ applications where a failure or malfunction of component or circuitry may directly - 65 to +175 Storage Temperature Range TSTG or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumof WILLAS. Customers using or selling WILLAS components for use in Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximumsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-10 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP