BAS20H(SOD 323)

WILLAS
FM120-M+
THRU
BAS20H
FM1200-M
200mA Surface Mount Switching Diode-200V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPackage
RECTIFIERS -20V- 200V
SOD-323
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
High
Voltage
better reverse
leakage current and thermal resistance.
• Batch process design, excellent power dissipation offers
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Switching
efficiency.
• Low power loss, highDiode
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
• High surge capability.
z• Guardring
We declare
that the material
of product
for overvoltage
protection.
high-speed switching.
• Ultra
compliance with RoHS requirements.
• Silicon epitaxial planar chip, metal silicon junction.
Pb-Freeparts
package
is available standards of
meet environmental
• Lead-free
MIL-STD-19500
RoHS product/228
for packing code suffix ”G”
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix “H”
0.071(1.8)
0.056(1.4)
SOD– 323
Halogen free product for packing code suffix "H"
Moisture Sensitivity
z
Mechanical
data Level 1
z Polarity: Color band denotes cathode end
1
CATHODE
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
2
ANODE
0.031(0.8) Typ.
2026
OrderingMethod
Information
• Polarity : Indicated by cathode band
Device
Marking
• Mounting Position : Any
BAS20H
JR gram
• Weight
: Approximated 0.011
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Shipping
3000/Tape&Reel
MAXIMUM
RATINGS RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Ratings at 25℃ Rating
ambient temperature unless otherwise specified.
Symbol
Single phase
half wave,
60Hz, resistive
Continuous
Reverse
Voltage of inductive load.
VR
For capacitive
derate
current by 20%
Peakload,
Forward
Current
IF
Peak Forward
Surge Current
RATINGS
Value
Unit
200
Vdc
200
mAdc
625
mAdc FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
FM140-MH FM150-MH
SYMBOL IFM(surge)
FM120-MH FM130-MH
Marking Code
Maximum
RecurrentCHARACTERISTICS
Peak Reverse Voltage
THERMAL
Maximum RMS Voltage
Characteristic
VRRM
VRMS
12
20
13
30
14
Symbol
PD20
14
40
15
50
16
60
18
80
28
Max
30 200 40
35
Unit
50mW
42
60
mW/°C
°C/W
°C
21
Maximum DC
Blocking
Total
DeviceVoltage
Dissipation FR–5 Board,*
VDC
Maximum Average
Forward Rectified Current
TA = 25°C
IO
IFSM
RθJA
1.57
635
RΘJA
TJ, Tstg
–55 to+150
Derate above 25°C
Peak Forward Surge Current 8.3 ms single half sine-wave
Thermal Resistance Junction to Ambient
superimposed on rated load (JEDEC method)
2SHUDWLQJJunction and Storage
Typical Thermal Resistance (Note 2)
Temperature Range
Typical Junction Capacitance (Note 1)
*FR–5 Minimum Pad
Operating Temperature Range
CJ
TJ
Characteristic
CHARACTERISTICS
OFF CHARACTERISTICS
Maximum Forward
Voltage
at 1.0A
DC Current
Reverse
Voltage
Leakage
Symbol
VF
(VR = 200
Vdc, T J = 150°C)
@T A=125℃
Rated DC Blocking
Voltage
NOTES:
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
VF
2012-06
2012-1
IR
V(BR)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
IR
Reverse Breakdown Voltage
(IBR = 100 µAdc)
2- Thermal Resistance From Junction to Ambient
120
200
56
70
105
140
80
100
150
200
40
120
-55 to +150
Min
- 65 to +175
Max
Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average
(VR = Reverse
200 Vdc)Current at @T A=25℃
115
150
1.0
30
-55 to +125
CHARACTERISTICS (TA = 25°C
StorageELECTRICAL
Temperature Range
TSTG unless otherwise noted)
10
100
0.50
0.70
–
–
200
µAdc0.85
1.0 0.5
100 10
–
0.9
0.92
Vdc
mV
CD
–
–
–
1000
1250
5.0
pF
trr
–
50
ns
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS20H
FM1200-M+
200mA Surface Mount Switching Diode-200V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPackage
RECTIFIERS -20V- 200V
SOD-323
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
820
Ω
better
reverse leakage current and thermal resistance.
surface mounted application in order to
• Low profile
2.0 k
+10 V
0.1 µF
tp
tr
IF
t
SOD-123H
optimize
boardIFspace.
100 µH
10%
loss, high efficiency.
• Low0.1power
µF
• High current capability, low forward voltage drop.
D.U.T.
• High surge capability.
50 Ω Input
50 Ω Output
Pulse
protection.
• Guardring for overvoltage Sampling
90%
Generator
Oscilloscope
• Ultra high-speed switching.
IR
• Silicon epitaxial planar chip, metal silicon junction.
VR
INPUT SIGNAL
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Notes:
1. Acode
2.0 kΩ
variable
packing
suffix
"G" resistor adjusted for a Forward Current (IF) of 30 mA.
• RoHS product for
Notes: for2.packing
Input pulse
adjusted
Halogen free product
codeissuffix
"H" so IR(peak) is equal to 30 mA.
Notes
: 3. tp » trr
Mechanical
data
0.146(3.7)
0.130(3.3)
t rr
t
0.012(0.3) Typ.
iR(REC) = 3.0 mA
0.071(1.8)
0.056(1.4)
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at i R(REC) = 3.0 mA)
0.040(1.0)
0.024(0.6)
Figure
1. Recovery Time Equivalent Test Circuit
retardant
• Epoxy : UL94-V0 rated flame
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
100
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
100
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
10 25℃ ambient temperature unless otherwise specified.
Ratings at
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
1.0
0
0.2
0.4
Maximum DC Blocking Voltage
VRRM
0.6
0.8
VRMS
1.0
1.2
VDC
VF, FORWARD VOLTAGE (V)
Figure 2. Forward Current Peak Forward Surge Current 8.3 ms single half sine-wave
1.8
f = 1 MHz TJ
Storage Temperature
Range
1.4
IE = 0 A TSTG
TA = 25°C
CT, TOTAL CAPACITANCE (pF)
Operating1.6
Temperature Range
CHARACTERISTICS
@T A=125℃
IR
0.4
0.2
2- Thermal Resistance From Junction to Ambient
35
42
56
100
150
10
100
70
200
250
140
150
200
-55 to +150
2.9
105
40
120
3.0
120
200
300
50
60
80
100
VR, REVERSE VOLTAGE (V)
1.0
Figure 3. Leakage Current
30
3.1
115
150
- 65 to +175
2.8
0.70
2.6
0.9
0.85
0.92
0.5
10
2.5
2.4
2.3
2.2
0
0
2012-06
2012-1
50
40
18
80
0.50
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
28
0
16
60
-55 to +125
VF
Maximum 0.8
Average Reverse Current at @T A=25℃
0.6
30
15
50
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH
2.7
Maximum 1.0
Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
0.001
21
20
CJ
Typical Junction Capacitance (Note 1)
1.2
14
14
40
RΘJA
Typical Thermal Resistance (Note 2)
13
30
IFSM
superimposed on rated load (JEDEC method)
2.0
1.4
0.01
12
20
IO
Maximum Average Forward Rectified Current
0.1
VF, FORWARD VOLTAGE (V)
Maximum0.1
RMS Voltage
NOTES:
1.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
IR, REVERSE CURRENT (µ A)
IF, FORWARD CURRENT (mA)
1000
0.031(0.8) Typ.
5.0
10
15
20
25
30
35
0
25
50
75
100
125
150
175
200
VR, REVERSE VOLTAGE (V)
IF, FORWARD CURRENT (mA)
Figure 4. Total Capacitance
Figure 5. Forward Voltage
225
250
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS20H
FM1200-M+
200mA Surface Mount Switching Diode-200V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPackage
RECTIFIERS -20V- 200V
SOD-323
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
to
• Low profile surface mounted application in order
SOD−323
optimize board space.
0.146(3.7)
0.130(3.3)
.045(1.15)
.057(1.45)
.010(0.25)
•
.016(0.40)
• Low power loss, high efficiency.
.106(2.70)
• High current capability, low forward voltage drop.
• High surge capability.
.091(2.30)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.075(1.90)
• Silicon epitaxial planar chip, metal silicon junction.
.059(1.50)
standards of
• Lead-free parts meet environmental
0.012(0.3) Typ.
.043(1.10)
0.071(1.8)
0.056(1.4)
.031(0.80)
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
.004(0.10)MAX.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.008(0.20)
.004(0.10)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volt
VRMS
12
13
.016(0.40)
20
30
.010(0.25)
14
21
28
35
42
56
70
105
140
Volt
VDC
20
40
50
60
80
100
150
200
Volt
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
Maximum DC Blocking Voltage
30
IO
.010(0.25)MIN.
1.0
30
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
40
120
(millimeters)
CJ in inches and
Dimensions
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-1
WILLAS ELECTRONIC CORP.
Volt
mAm
WILLAS
FM120-M+
THRU
BAS20H
FM1200-M+
200mA Surface Mount Switching Diode-200V
1.0A SURFACE MOUNT SCHOTTKYSOD-323
BARRIER Package
RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Ordering
Information:
power dissipation offers
design, excellent
• Batch process
better reverse leakage current and thermal resistance.
Device PN mounted application in order to
• Low profile surface
(1) (2)
optimize board space.
BAS20H‐T G ‐WS SOD-123H
Packing Tape&Reel: 3 Kpcs/Reel 0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Note: (1)
current capability, low forward voltage drop.
• High Packing code, Tape&Reel Packing
surge capability.
• High
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable***Disclaimer***
per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any
• Weight : Approximated 0.011 gram
changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
at 25℃ ambient temperature unless otherwise specified.
contained are intended to provide a product description only. "Typical" parameters Single phase half wave, 60Hz, resistive of inductive load.
which may be included on WILLAS data sheets and/ or specifications can For capacitive load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
MarkingWILLAS does not assume any liability arising out of the application or Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
use of any product or circuit. 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum
Average Forward Rectified Current
IO
1.0
WILLAS products are not designed, intended or authorized for use in medical, Peak Forward
Surge Current 8.3 ms single half sine-wave
life‐saving implant or other applications intended for life‐sustaining or other related 30
IFSM
superimposed on rated load (JEDEC method)
applications where a failure or malfunction of component or circuitry may directly 40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical or indirectly cause injury or threaten a life without expressed written approval Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
Operating Temperature Range
TJ
of WILLAS. Customers using or selling WILLAS components for use in 65
to
+175
Storage Temperature Range
TSTG
such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 0.85
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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