DTC143EE(SC 89)

WILLAS
FM120-M
DTC143EE THRU
Bias
Resistor
Transistors
FM1200-M
1.0A
SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better
reverse leakage
current and
thermal resistance.
NPN
Silicon
Surface
Mount
Transistors
• Low profile surface mounted application in order to
board space. Bias Resistor Network
withoptimize
Monolithic
SOD-123H
• Low power loss, high efficiency.
low forward
voltageto
drop.
• High
This
new current
series ofcapability,
digital transistors
is designed
replace a single
High
surge
capability.
•
device and its external resistor bias network. The BRT (Bias Resistor
• Guardring for overvoltage protection.
Transistor) contains a single transistor with a monolithic bias netw ork
• Ultra high-speed switching.
consisting of two resistors; a series base resistor and a base-emitter
• Silicon epitaxial planar chip, metal silicon junction.
resistor. The BRT eliminates these individual components by integrating
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
Mechanical
data
• Simplifies
Circuit Design
• Reduces
Board
Space
• Epoxy : UL94-V0 rated flame retardant
• Reduces
Component
Count
plastic,
SOD-123H
• Case : Molded
• The SC-89 package can be soldered using wave or reflow. The,
• Terminals :Plated terminals, solderable per MIL-STD-750
modified gull-winged leads absorb thermal stress during soldering
Method 2026
eliminating the possibility of damage to the die.
• Polarity : Indicated by cathode band
PIN 1
BASE
0.031(0.8) Typ.
(INPUT)
PIN 3
COLLECTOR
0.040(1.0)
(OUTPUT)
R1
0.024(0.6)
0.031(0.8) Typ.
R2
PIN 2
EMITTER
(GROUND)
Dimensions in inches and (millimeters)
= 25°C unless otherwise noted)
MAXIMUM
RATINGS
Position(T:AAny
• Mounting
• Weight : Approximated
0.011 gram Symbol
Rating
VCBO
Value
Unit
50
Vdc
0.071(1.8)
0.056(1.4)
SC-89
them MIL-STD-19500
into a single device.
/228The use of a BR T can reduce both system
cost• and
board
space.
The device
housed
RoHS
product
for packing
codeissuffix
"G"in the SC-89 package
free for
product
for packing
code
suffix
"H"
whichHalogen
is designed
low power
surface
mount
applications.
Collector-Base Voltage
0.012(0.3) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Collector-Emitter Voltage
VCEO
50
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector Current
IC
100
Single phase half wave, 60Hz, resistive of inductive load.
CHARACTERISTICS
ForTHERMAL
capacitive load,
derate current by 20%
Rating
RATINGS
Vdc
mAdc
MARKING DIAGRAM
3
Symbol
Unit FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL Value
FM120-MH FM130-MH
Total
Device Dissipation,
Marking
Code
PD
FR−4
BoardPeak
(NoteReverse
1) @ TA
= 25°C
Maximum
Recurrent
Voltage
VRRM
Derate above 25°C
VRMS
RqJA
VDC
Maximum RMS Voltage
Thermal Resistance,
Maximum DC Blocking Voltage
Junction−to−Ambient (Note 1)
IO
Total Device Dissipation,
PD
FR−4
Board
(Note
2)
@
T
A = 25°C
Peak Forward Surge Current 8.3 ms single
half sine-wave
IFSM
Derate above 25°C
12
200
20
1.6
14
600
20
13
mW
30
mW/°C
21
°C/W
30
300
2.4
mW
mW/°C
400
°C/W
14
40
28
35
40
50
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Junction and Storage Temperature
Range
Operating Temperature Range
CJ
TJ, Tstg −55 to +150 -55 to
°C+125
TJ
15
50
16
60
18
8J M
80
10
100
115
150
120
200
42 1
562
70
60
80
100
8J = Specific Device Code
1.0
M = Date Code
30
105
140
150
200
Pb-Free package 40
is available
suffix "G"
RoHS product for 120
packing code
-55 to
+150suffix "H"
Halogen free product for packing
code
- 65 to +175
TSTG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
CHARACTERISTICS
SYMBOLtoFM120-MH
Operating Conditions
is not implied. Extended exposure
stresses FM130-MH
above theFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
0.9
Maximum
Forward Voltage
at 1.0A
DC
0.92
VF reliability.
0.50
0.70
0.85
Recommended
Operating
Conditions
may affect device
1.
FR−4
@
Minimum
Pad
0.5
Maximum Average Reverse Current at @T A=25℃
IR
2. FR−4 @ 1.0 × 1.0 Inch Pad
10
@T A=125℃
Rated DC Blocking Voltage
Storage Temperature Range
ORDERING
NOTES:
INFORMATION AND RESISTOR VALUES
1- Measured
at 1 MHZ and applied
reverse voltageR1
of 4.0
Device
Marking
(K) VDC.
2- Thermal Resistance From Junction to Ambient
2014-01
DTC143EE
2012-06
8J
4.7
R2 (K)
4.7
Package
SC-89
Shipping
3000 Tape & Reel
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
DTC143EE THRU
Bias Resistor Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Features
OFF CHARACTERISTICS
Pb Free Produ
PACKAGE
TypoutlineMax
Min
Package
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
• Low profile surface mounted application in order to
optimize board space.
loss,
high efficiency.
• Low power
Collector−Emitter
Cutoff
Current
(VCE = 50 V, IB = 0)
ICEO
• High current capability, low forward voltage drop.
IEBO
Emitter−Base
(VEB = 6.0 V, IC = 0)
surgeCurrent
capability.
• HighCutoff
Guardring
for
overvoltage
protection.
•
V(BR)CBO
Collector−Base Breakdown Voltage (IC = 10 μA, IE = 0)
switching.
• Ultra high-speed
V(BR)CEO
Collector−Emitter
Breakdown
Voltage (Note 3)
planar chip, metal silicon junction.
• Silicon
mA, IB =epitaxial
0)
(IC = 2.0
• Lead-free parts meet environmental standards of
ON CHARACTERISTICS
(Note 3)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
hFE
Halogen free product for packing code suffix "H"
Unit
−
−
SOD-123H
100
nAdc
−
−
0.146(3.7)
500
0.130(3.3)
nAdc
0.012(0.3) Typ.
−
−
1.5
mAdc
50
−
−
Vdc
50
−
−
Vdc
0.056(1.4)
15
30
−
−
−
0.25
Vdc
0.024(0.6)
0.2
Vdc
0.071(1.8)
Mechanical data
Collector−Emitter Saturation Voltage
UL94-V0
• Epoxy
(IC = 10
mA, IB: =
1 mA) rated flame retardant
VCE(sat)
• Case : Molded plastic, SOD-123H
Output Voltage (on)
VOL ,
• Terminals
solderable per MIL-STD-750
V , RL =terminals,
1 .0 k Ω)
V, VB = 2.5:Plated
(VCC = 5.0
0.040(1.0)
0.031(0.8) Typ.
0.031(0.8) Typ.
−
−
Method 2026
Output Voltage (off)
• Polarity
Indicated
by kΩ)
cathode band
(VCC = 5.0
V, VB = :0.5
V, RL = 1.0
VOH
−
− and (millimeters)
Vdc
Dimensions
in inches
4.9
Mounting
: Any
Pulse Position
Width < 300
s, Duty Cycle < 2.0%
3. Pulse• Test:
• WeightCHARACTERISTICS
: Approximated 0.011
ELECTRICAL
(Tgram
A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Typ
Min
MAXIMUM
RATINGS AND ELECTRICAL
CHARACTERISTICS
Max
Unit
Input
Resistor
Ratings
at 25℃ ambient temperature unless otherwise specified.R1
3.3
4.7
6.1
kΩ
Single phase
Resistor
Ratio half wave, 60Hz, resistive of inductive load.
0.8
1.0
1.2
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
TYPICAL ELECTRICAL CHARACTERISTICS
Marking Code
250
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
200
PD , POWER DISSIPATION (MILLIWATTS)
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
150
IO
IFSM
superimposed on rated load
100 (JEDEC method)
1.0
30
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
50
Operating Temperature Range
RqJA = 600°C/W
Storage Temperature Range
0
−50
CJ
TJ
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
0
50
100
150
(°C)
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
CHARACTERISTICSTA, AMBIENT TEMPERATURE
SYMBOL FM120-MH
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Maximum Forward Voltage at 1.0A DC
VF
Figure 1. Derating Curve
Maximum Average Reverse Current at @T A=25℃
1.0
D = 0.5 Voltage
Rated DC Blocking
14
40
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
R1/R2
0.50
0.70
IR
@T A=125℃
0.85
0.9
0.5
0.92
10
0.2
0.1
0.1
1- Measured at 10.05
MHZ and applied reverse voltage of 4.0 VDC.
NOTES:
2- Thermal Resistance From Junction to Ambient
2014-01
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
2012-06
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 2. Normalized Thermal Response
10
100
1000
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
DTC143EE THRU
Bias Resistor Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Features
Package outline
TYPICAL APPLICATIONS FOR NPN BRTs
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
+12 V
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
ISOLATED
LOAD
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
for OR
packing code suffix "G"
• RoHS product
FROM mP
HalogenOTHER
free product
LOGIC for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
Figure 3. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
• Weight : Approximated
0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
+12 V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VCC
14
40
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
OUT
Typical Thermal Resistance (Note 2)
IN
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
RΘJA
CJ
TJ
1.0
30
40
120
-55 to +125
- 65 to +175
TSTG
-55 to +150
LOAD
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
Maximum Average Reverse Current at @T A=25℃
A=125℃
Rated DC
Blocking
Figure
4 Voltage
. Open [email protected]
Inverter:
NOTES:
IR
0.50
0.70
0.85
0.9
0.5
0.92
10 Current Source
Figure 5 . Inexpensive, Unregulated
Inverts the Input Signal
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2014-01
2012-06
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC143EE THRU
Bias
Resistor
Transistors
FM1200-M
1.0A
SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SC-89
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.040(0.95)
.030(0.75)
• Epoxy : UL94-V0 rated flame retardant
.067(1.70)
• Case : Molded plastic, SOD-123H
.059(1.50)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.067(1.70)
.059(1.50)
.012(0.30)MIN.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
VRRM
.008(0.20)
12
13
14
.004(0.10)
20
30
40
Maximum RMS Voltage
VRMS
14
21
28
VDC
20
30
40
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
.043(1.10)
Maximum DC Blocking Voltage
.035(0.90)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
15
50
16
60
18
80
35
42
50
60
10
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
.031(0.80)
.024(0.60)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
40
120
-55 to +125
-55 to +150
- 65 to +175
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
0.50
0.70
0.85
0.9
0.5
IR
0.92
10
.013(0.33)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.009(0.23)
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2014-01
Rev.D COR
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
Bias Resistor Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
FM120-M+
DTC143EE THRU
FM1200-M+
Pb Free Produc
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
DTC143EE –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
Storagelife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum
Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval Maximum Average Reverse Current at @T A=25℃
0.9
0.92
0.5
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal Resistance From Junction to Ambient
2012-06
2014-01
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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