WILLAS FM120-M DTC143EE THRU Bias Resistor Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. NPN Silicon Surface Mount Transistors • Low profile surface mounted application in order to board space. Bias Resistor Network withoptimize Monolithic SOD-123H • Low power loss, high efficiency. low forward voltageto drop. • High This new current series ofcapability, digital transistors is designed replace a single High surge capability. • device and its external resistor bias network. The BRT (Bias Resistor • Guardring for overvoltage protection. Transistor) contains a single transistor with a monolithic bias netw ork • Ultra high-speed switching. consisting of two resistors; a series base resistor and a base-emitter • Silicon epitaxial planar chip, metal silicon junction. resistor. The BRT eliminates these individual components by integrating • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Mechanical data • Simplifies Circuit Design • Reduces Board Space • Epoxy : UL94-V0 rated flame retardant • Reduces Component Count plastic, SOD-123H • Case : Molded • The SC-89 package can be soldered using wave or reflow. The, • Terminals :Plated terminals, solderable per MIL-STD-750 modified gull-winged leads absorb thermal stress during soldering Method 2026 eliminating the possibility of damage to the die. • Polarity : Indicated by cathode band PIN 1 BASE 0.031(0.8) Typ. (INPUT) PIN 3 COLLECTOR 0.040(1.0) (OUTPUT) R1 0.024(0.6) 0.031(0.8) Typ. R2 PIN 2 EMITTER (GROUND) Dimensions in inches and (millimeters) = 25°C unless otherwise noted) MAXIMUM RATINGS Position(T:AAny • Mounting • Weight : Approximated 0.011 gram Symbol Rating VCBO Value Unit 50 Vdc 0.071(1.8) 0.056(1.4) SC-89 them MIL-STD-19500 into a single device. /228The use of a BR T can reduce both system cost• and board space. The device housed RoHS product for packing codeissuffix "G"in the SC-89 package free for product for packing code suffix "H" whichHalogen is designed low power surface mount applications. Collector-Base Voltage 0.012(0.3) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Collector-Emitter Voltage VCEO 50 Ratings at 25℃ ambient temperature unless otherwise specified. Collector Current IC 100 Single phase half wave, 60Hz, resistive of inductive load. CHARACTERISTICS ForTHERMAL capacitive load, derate current by 20% Rating RATINGS Vdc mAdc MARKING DIAGRAM 3 Symbol Unit FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL Value FM120-MH FM130-MH Total Device Dissipation, Marking Code PD FR−4 BoardPeak (NoteReverse 1) @ TA = 25°C Maximum Recurrent Voltage VRRM Derate above 25°C VRMS RqJA VDC Maximum RMS Voltage Thermal Resistance, Maximum DC Blocking Voltage Junction−to−Ambient (Note 1) IO Total Device Dissipation, PD FR−4 Board (Note 2) @ T A = 25°C Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Derate above 25°C 12 200 20 1.6 14 600 20 13 mW 30 mW/°C 21 °C/W 30 300 2.4 mW mW/°C 400 °C/W 14 40 28 35 40 50 Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Thermal Resistance, Junction−to−Ambient (Note 2) RqJA RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Junction and Storage Temperature Range Operating Temperature Range CJ TJ, Tstg −55 to +150 -55 to °C+125 TJ 15 50 16 60 18 8J M 80 10 100 115 150 120 200 42 1 562 70 60 80 100 8J = Specific Device Code 1.0 M = Date Code 30 105 140 150 200 Pb-Free package 40 is available suffix "G" RoHS product for 120 packing code -55 to +150suffix "H" Halogen free product for packing code - 65 to +175 TSTG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended CHARACTERISTICS SYMBOLtoFM120-MH Operating Conditions is not implied. Extended exposure stresses FM130-MH above theFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF reliability. 0.50 0.70 0.85 Recommended Operating Conditions may affect device 1. FR−4 @ Minimum Pad 0.5 Maximum Average Reverse Current at @T A=25℃ IR 2. FR−4 @ 1.0 × 1.0 Inch Pad 10 @T A=125℃ Rated DC Blocking Voltage Storage Temperature Range ORDERING NOTES: INFORMATION AND RESISTOR VALUES 1- Measured at 1 MHZ and applied reverse voltageR1 of 4.0 Device Marking (K) VDC. 2- Thermal Resistance From Junction to Ambient 2014-01 DTC143EE 2012-06 8J 4.7 R2 (K) 4.7 Package SC-89 Shipping 3000 Tape & Reel WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M DTC143EE THRU Bias Resistor Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Features OFF CHARACTERISTICS Pb Free Produ PACKAGE TypoutlineMax Min Package • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO • Low profile surface mounted application in order to optimize board space. loss, high efficiency. • Low power Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO • High current capability, low forward voltage drop. IEBO Emitter−Base (VEB = 6.0 V, IC = 0) surgeCurrent capability. • HighCutoff Guardring for overvoltage protection. • V(BR)CBO Collector−Base Breakdown Voltage (IC = 10 μA, IE = 0) switching. • Ultra high-speed V(BR)CEO Collector−Emitter Breakdown Voltage (Note 3) planar chip, metal silicon junction. • Silicon mA, IB =epitaxial 0) (IC = 2.0 • Lead-free parts meet environmental standards of ON CHARACTERISTICS (Note 3) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE Halogen free product for packing code suffix "H" Unit − − SOD-123H 100 nAdc − − 0.146(3.7) 500 0.130(3.3) nAdc 0.012(0.3) Typ. − − 1.5 mAdc 50 − − Vdc 50 − − Vdc 0.056(1.4) 15 30 − − − 0.25 Vdc 0.024(0.6) 0.2 Vdc 0.071(1.8) Mechanical data Collector−Emitter Saturation Voltage UL94-V0 • Epoxy (IC = 10 mA, IB: = 1 mA) rated flame retardant VCE(sat) • Case : Molded plastic, SOD-123H Output Voltage (on) VOL , • Terminals solderable per MIL-STD-750 V , RL =terminals, 1 .0 k Ω) V, VB = 2.5:Plated (VCC = 5.0 0.040(1.0) 0.031(0.8) Typ. 0.031(0.8) Typ. − − Method 2026 Output Voltage (off) • Polarity Indicated by kΩ) cathode band (VCC = 5.0 V, VB = :0.5 V, RL = 1.0 VOH − − and (millimeters) Vdc Dimensions in inches 4.9 Mounting : Any Pulse Position Width < 300 s, Duty Cycle < 2.0% 3. Pulse• Test: • WeightCHARACTERISTICS : Approximated 0.011 ELECTRICAL (Tgram A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Typ Min MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Max Unit Input Resistor Ratings at 25℃ ambient temperature unless otherwise specified.R1 3.3 4.7 6.1 kΩ Single phase Resistor Ratio half wave, 60Hz, resistive of inductive load. 0.8 1.0 1.2 For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M TYPICAL ELECTRICAL CHARACTERISTICS Marking Code 250 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 200 PD , POWER DISSIPATION (MILLIWATTS) 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current 150 IO IFSM superimposed on rated load 100 (JEDEC method) 1.0 30 RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 50 Operating Temperature Range RqJA = 600°C/W Storage Temperature Range 0 −50 CJ TJ 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG 0 50 100 150 (°C) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M CHARACTERISTICSTA, AMBIENT TEMPERATURE SYMBOL FM120-MH r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Maximum Forward Voltage at 1.0A DC VF Figure 1. Derating Curve Maximum Average Reverse Current at @T A=25℃ 1.0 D = 0.5 Voltage Rated DC Blocking 14 40 Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms single half sine-wave R1/R2 0.50 0.70 IR @T A=125℃ 0.85 0.9 0.5 0.92 10 0.2 0.1 0.1 1- Measured at 10.05 MHZ and applied reverse voltage of 4.0 VDC. NOTES: 2- Thermal Resistance From Junction to Ambient 2014-01 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 2012-06 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 2. Normalized Thermal Response 10 100 1000 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M DTC143EE THRU Bias Resistor Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Features Package outline TYPICAL APPLICATIONS FOR NPN BRTs • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. +12 V SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. ISOLATED LOAD 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 for OR packing code suffix "G" • RoHS product FROM mP HalogenOTHER free product LOGIC for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any Figure 3. Level Shifter: Connects 12 or 24 Volt Circuits to Logic • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS +12 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VCC 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) OUT Typical Thermal Resistance (Note 2) IN Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range RΘJA CJ TJ 1.0 30 40 120 -55 to +125 - 65 to +175 TSTG -55 to +150 LOAD CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Average Reverse Current at @T A=25℃ A=125℃ Rated DC Blocking Figure 4 Voltage . Open Collector@T Inverter: NOTES: IR 0.50 0.70 0.85 0.9 0.5 0.92 10 Current Source Figure 5 . Inexpensive, Unregulated Inverts the Input Signal 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2014-01 2012-06 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC143EE THRU Bias Resistor Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SC-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .040(0.95) .030(0.75) • Epoxy : UL94-V0 rated flame retardant .067(1.70) • Case : Molded plastic, SOD-123H .059(1.50) , • Terminals :Plated terminals, solderable per MIL-STD-750 .067(1.70) .059(1.50) .012(0.30)MIN. 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage VRRM .008(0.20) 12 13 14 .004(0.10) 20 30 40 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code .043(1.10) Maximum DC Blocking Voltage .035(0.90) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG 15 50 16 60 18 80 35 42 50 60 10 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 .031(0.80) .024(0.60) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 40 120 -55 to +125 -55 to +150 - 65 to +175 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: @T A=125℃ 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 .013(0.33) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .009(0.23) 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2014-01 Rev.D COR WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS Bias Resistor Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FM120-M+ DTC143EE THRU FM1200-M+ Pb Free Produc Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2) forward voltage drop. DTC143EE –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storagelife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval Maximum Average Reverse Current at @T A=25℃ 0.9 0.92 0.5 IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.