DTC113ZUA(SOT 323)

WILLAS
FM120-M
DTC113ZUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
surge capability.
• High
package
is available
• Pb-Free
• Guardring for overvoltage protection.
RoHS product
for
packing
code suffix ”G”
• Ultra high-speed switching.
epitaxialfor
planar
chip, code
metal suffix
silicon “H”
junction.
• Silicon
Halogen
free product
packing
x Epitaxial
Planar Die
Construction
parts
meet environmental standards of
• Lead-free
MIL-STD-19500
/228 Available
NPN Types
x Complementary
RoHS product
for packing code suffix "G"
Resistors
x Built-In•Biasing
Halogen
for packing code
suffix "H"
• Epoxy meets
ULfree
94product
V-0 flammability
rating
Mechanical
data
• Moisure Sensitivity Level 1
x Marking:
E21 : UL94-V0 rated flame retardant
• Epoxy
0.146(3.7)
0.130(3.3)
SOT-323
0.012(0.3) Typ.
.004(0.10)MIN.
Features
.096(2.45)
.078(2.00)
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Absolute maximum ratings
@ 25к
Parameter
• Polarity : Indicated
by cathode band
Collector current
Mounting
Position
:
Any
•Input
voltage
dissipation
•Power
Weight
: Approximated 0.011 gram
Junction temperature
Storage temperature
MAXIMUM
RATINGS
Min
Typ
Max
Unit
Dimensions in inches.087(2.20)
and (millimeters)
--100
--mA
.070(1.80)
-5
--+10
V
--200
--mW
--150
--ć
-55
--150
ć
AND ELECTRICAL CHARACTERISTICS
.054(1.35)
.045(1.15)
Symbol
IC
VIN
Pd
Tj
Tstg
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.056(1.40)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Symbol
Parameter
Min
Typ
Recurrent
Peak
Reverse
Voltage
VMaximum
0.3VRRM --I(off)
Input
voltage
(VCC
=5V, IO=100­A)
---VRMS --VMaximum
I(on)
RMS Voltage (VO=0.3V, IO=20mA)
VO(on)
Output voltage (IO=10mA,Ii=0.5mA)
----Maximum DC Blocking Voltage
II
Input current (VI=5V)
--- VDC --IO(off)
current
(VCCRectified
=50V, VCurrent
--- IO --MaximumOutput
Average
Forward
I=0)
G
DC current gain (VO=5V, IO=5mA)
33 --I
Peak
Forward
Current 8.3 ms single half sine-wave0.7
R
InputSurge
resistance
1
IFSM 1.0
R2superimposed
/R1
Resistance
8
10
on rated ratio
load (JEDEC method)
Transition
frequency
Typical
Thermal
Resistance
(Note 2)
--- RΘJA250
fT
(VO =10V, IO=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
CJ
TJ
Operating Temperature Range
Storage Temperature Range
12Max
20 --14 3.0
0.3
20 7.2
0.5
--1.3
12
---
13Unit
30 V
21 V
V
30mA
­A
K¡
MHz
-55 to +125
14
40
15
50
.047(1.20)
16
18
60
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
.004(0.10)MAX.
1.0
30
80
100
150
200
.043(1.10)
.032(0.80)
RATINGS
Electrical Characteristics
@ 25к
.016(0.40)
40 .008(0.20)
120
in inches and
-55(millimeters)
to +150
Dimensions
- 65 to +175
TSTG
Suggested Solder
CHARACTERISTICS
FM180-MH
FM1100-MH FM1150-MH FM1200-M
Pad
Layout
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
0.9
0.85
0.70
0.5
IR
0.90
0.92
10
NOTES:
1.90
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-0
2012-06
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
DTC113ZUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
excellent power dissipation offers
• Batch process
ONdesign,
Characteristics
OFF Characteristics
SOD-123H
100
VCC=5V
Ta=100℃
0.146(3.7)
0.130(3.3)
25℃
0.012(0.3) Typ.
(mA)
10
IO
better reverse leakage current and thermal resistance.
VO=0.3V
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Ta=25℃
protection.
• Guardring for overvoltage
100℃
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
OUTPUT CURRENT
1000
INPUT VOLTAGE
VI(ON)
(mV)
5000
0.071(1.8)
0.056(1.4)
1
0.1
Mechanical data
100
0.1
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
0.01
• Case : Molded
0
1 plastic, SOD-123H
10
100
,
I solderable
(mA)
• TerminalsOUTPUT
:PlatedCURRENT
terminals,
per MIL-STD-750
0.031(0.8)500
Typ.
1000
INPUT VOLTAGE
O
VI(OFF)
1500
0.031(0.8)
Typ.
(mV)
Method 2026
• Polarity : Indicated by cathode band
VO(ON) —— IO
: Any
• Mounting Position
• Weight : Approximated 0.011 gram
1000
Dimensions in inches and (millimeters)
GI
1000
——
IO
IO/II=20
VO=5V
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
10 Forward Surge Current 8.3 ms single half sine-wave
Peak
3
10
superimposed on ratedOUTPUT
load (JEDEC
method)
CURRENT
IO (mA)
16
60
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
1
0.1
0.3
3
1
1.0
30
10
IO
PD
400
30
100
(mA)
40
120
-55 to +125
TSTG
—— Ta
- 65 to +175
-55 to +150
f=1MHz
Ta=25℃
350
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
VF
(pF)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
CO
15
50
TJ
VR
CHARACTERISTICS
OUTPUT CAPACITANCE
14
40
CJ
@T A=125℃
0.50
IR
300
250
POWER DISSIPATION
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
13
OUTPUT CURRENT
Typical Junction Capacitance (Note 1)
Rated DC Blocking Voltage
GI
IFSM100
RΘJA
Typical Thermal Resistance (Note 2)
30
10
3
IO
Maximum Average Forward Rectified Current
4
100
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
30
SYMBOL FM120-MH FM130-MH
Marking Code
Operating Temperature Range
CO ——
6
Storage
Temperature Range
25℃
DC CURRENT GAIN
RATINGS
100
Ta=100℃
(mW)
OUTPUT VOLTAGE
Ratings at 25℃ ambient temperature unless otherwise specified.
Ta=100℃
Single phase half wave,
60Hz, resistive of inductive load.
25℃ current by 20%
For capacitive load, derate
PD
VO(ON)
(mV)
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2- Thermal Resistance From Junction to Ambient
2
0.70
0.9
0.85
0.5
0.92
10
DTC113ZUA
200
150
100
50
0
0
0
2012-0
2012-06
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC113ZUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produ
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
loss, high efficiency.
• Low powerDevice PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
DTC113ZUA –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical
RΘJA
Thermal Resistance (Note 2)
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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