WILLAS FM120-M+ THRU 200mA Surface Mount Schottky Barrier Rectifiers - 30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-523 PackagePACKAGE SOD-123+ BAT54X FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. These Schottky barrier are designed current capability, lowdiodes forward voltage drop.for high speed switching • High capability. • High surgecircuit applications, protection, and voltage clamping. Extremely low forward voltfor overvoltage protection. • Guardring age reduces conduction loss. Miniature surface mount package is excellent for switching. • Ultra hand heldhigh-speed and portable applications where space is limited. epitaxial chip, metal silicon junction. • Silicon • Extremely Fastplanar Switching Speed parts meet environmental standards of • Lead-free • Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 0.071(1.8) 0.056(1.4) 2 MIL-STD-19500 /228 • Device Marking: JV product for packing code suffix "G" • RoHS We declare that the of product Halogen free product formaterial packing code suffix "H" SOD-523 compliance with RoHS requirements. Mechanical data Pb-Free package is available 0.040(1.0) 0.024(0.6) UL94-V0for rated flamecode retardant • Epoxy RoHS: product packing suffix ”G” : Molded plastic, SOD-123H • Case Halogen free product for packing code suffix “H” Moisture Sensitivity Level 1 solderable per MIL-STD-750 , • Terminals :Plated terminals, 0.031(0.8) Typ. 0.031(0.8) Typ. 1 CATHODE Polarity: Color band denotes cathode end Method 2026 ODERING INFORMATION • Polarity : Indicated by cathode band Device Marking Shipping Position : Any • Mounting JV 0.0113000/Tape & Reel BAT54X • Weight : Approximated gram 2 ANODE Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase halfRATINGS wave, 60Hz,(Tresistive of inductive load. MAXIMUM J =125°C unless otherwise noted ) For capacitive load, derate current by 20% Rating Symbol Value Unit FM130-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOLV FM120-MH RATINGS Reverse Voltage R 30 FM140-MH FM150-MH V Marking Code 12 13 14 15 16 18 10 115 120 CHARACTERISTICS 20 30 40 50 60 80 100 150 200 MaximumTHERMAL Recurrent Peak Reverse Voltage V VRRM 14 VRMS Symbol 21Max 28 VDC PD 20 T = 25°C A Maximum Average Forward Rectified Current IO Derate above 25°C Peak Forward SurgeResistance Current 8.3 ms single halfto sine-wave Thermal Junction Ambient IFSM RθJA superimposed on rated load (JEDEC method) Operating/Junction and Storage Temperature TJ , Tstg Typical* FR-4 Thermal Resistance (Note 2) RΘJA Minimum Pad 30200 40 MaximumCharacteristic RMS Voltage MaximumTotal DC Blocking Voltage Device Dissipation FR-5 Board,* 1.57 635 -55~150 35 Unit mW 50 CJ -55 noted) to +125 ELECTRICAL (T A = 25°C (EACH DIODE) Operating TemperatureCHARACTERISTICS Range TJ unless otherwise Storage Temperature Range TSTG 70 105 140 V 60 80 100 150 200 V 40 120 A A ℃ -55 to +150 - 65 to +175 Max Characteristic Symbol Min Typ Unit Reverse Breakdown Voltage (I R = 10 µA) V(BR)R 30 — — Volts CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Total Capacitance (V R = 1.0 V, f = 1.0 MHz) CT — 7.6 10 pF V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Reverse Leakage (V R = 25 V) IR — 0.5 2.0 µAdc 0.5 Maximum Average Reverse Current at @T A=25℃ Forward Voltage (I F = 0.1 mAdc) VF — 0.22 0.24 Vdc IR m 10 @T A=125℃ Rated DC Blocking Voltage Forward Voltage (I F = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (I F = 10 mAdc) VF — 0.35 0.40 Vdc NOTES: = 30 mAdc) (I Freverse 1- Measured Forward at 1 MHZ Voltage and applied voltage of 4.0 VDC. 56 1.0 30 mW/°C °C/W °C Typical Junction Capacitance (Note 1) 42 mAdc) Forward Voltage (I F = to100 2- Thermal Resistance From Junction Ambient Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) Forward Current (DC) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current (t < 1.0 s) 2012-06 2012-11 VF VF — — 0.41 0.52 0.5 1.0 Vdc Vdc trr — — 5.0 ns IF IFRM IFSM — — — — — — 200 300 600 mAdc mAdc mAdc WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 200mA Barrier Rectifiers - 30V 1.0A Surface SURFACEMount MOUNTSchottky SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-523 Package SOD-123+ PACKAGE FM1200-M+ BAT54X Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 2.0 k • Low 820 Ωsurface mounted application in order to +10 V profile optimize board space. • Low power loss, high efficiency. 0.1µF I F forward voltage drop. 100 µH low • High current capability, • High surge capability. • Guardring for overvoltage protection. 0.1 µFswitching. D U T • Ultra high-speed 50 Ω OUTPUT 50 Ω INPUT epitaxial planar chip, metal silicon junction. • Silicon PULSE SAMPLING parts meet environmental standards of • Lead-free GENERATOR OSCILLOSCOPE V MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SOD-123H tp tr IF t 0.146(3.7) 0.130(3.3) t rr 10% 90% t i IR INPUT SIGNAL flame retardant • Epoxy : UL94-V0 rated Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr SOD-123H • Case : Molded plastic, 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) R Mechanical data Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I R(REC) 0.012(0.3) Typ. F ) of 10mA. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Figure 1. Recovery Time Equivalent Test Circuit Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) TYPICAL CHARACTERISTICS 1000 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code 1.0 Maximum Recurrent Peak Reverse Voltage 85°C Maximum DC Blocking Voltage 25°C –25°C VRRM 12 20 13 30 VRMS 14 21 20 30 –55°C VDC IO 0.5 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM V , FORWARD VOLTAGE (VOLTS) Maximum Average Forward Rectified Current 0.1 10 0.2 0.3 0.1 0.01 0.001 0.1 0.0 100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH1.0 125°C Maximum RMS Voltage I R , REVERSE CURRENT (µA) I F , FORWARD CURRENT (mA) Ratings at 25℃ ambient temperature unless otherwise specified. – 40°C Single phase half wave, 60Hz, resistive of inductive load. 10 150°C For capacitive load, derate current by 20% 0.4 0.6 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 0 5 F superimposed on rated load (JEDEC method) Figure 2. Forward Voltage Operating Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC NOTES: A ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ 12 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 10 VF Maximum Average Reverse Current at @T A=25℃ 8 Rated DC Blocking Voltage 120 -55 to +125 TJ 14 C T , TOATAL CAPACITANCE (pF) Storage Temperature Range CJ Typical Junction Capacitance (Note 1) A 30 Figure 3.40 Leakage Current RΘJA Typical Thermal Resistance (Note 2) 1.0 15 20 25 30 V R , REVERSE VOLTAGE (VOLTS) 10 @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 6 Vo mA 4 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2 0 0 5 10 15 20 25 30 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 200mA Barrier Rectifiers - 30V 1.0A Surface SURFACEMount MOUNTSchottky SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-523 Package SOD-123+ PACKAGE FM1200-M+ BAT54X Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOD-523 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of .014(0.35) .009(0.25) .051(1.30) Mechanical data .043(1.10) • Epoxy : UL94-V0 rated flame retardant Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .035(0.90) .028(0.70) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .028(0.70) .020(0.50) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS .067(1.70) V Maximum Average Forward Rectified Current .059(1.50) I Maximum DC Blocking Voltage .008(0.20) .002(0.05) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% DC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 14 21 28 35 42 56 70 105 140 Vo 20 30 40 50 60 80 100 150 200 Vo IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 O 40 120 -55 to +125 Am Am ℃/ P -55 to +150 ℃ - 65 to +175 TSTG ℃ .006(0.15)MIN. CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 WILLAS ELECTRONIC Rev.C CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 200mA Surface MOUNT Mount Schottky Rectifiers - 30V 1.0A SURFACE SCHOTTKYBarrier BARRIER RECTIFIERS -20V- 200V SOD-523 Package SOD-123+ PACKAGE FM1200-M+ BAT54X Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, capability. (1)G(2)‐WS • High surgeBAT54X ‐T Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) Packing code, Tape & Reel Packing switching. • Ultra high-speed epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amp Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -55 to +125 -55 to +150 TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.