WILLAS FM120-M+ SD103AX THRU SOD-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, • Batch SCHOTTKY BARRIER DIODEexcellent power dissipation offers better reverse leakage current and thermal resistance. SOD-523 • Low profile surface mounted application in order to SOD-123H optimize board space. FEATURES • Low power loss, high efficiency. Low •Forward Voltage Drop High current capability, low forward voltage drop. surge capability. for Transient Protection • High Guard Ring Construction • Guardring for overvoltage protection. Low •Reverse Recovery Time Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Low •Reverse Capacitance Lead-free parts meet environmental standards of • Pb-Free package is available 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 product packing code suffix "G" ”G” • RoHS RoHS product forforpacking code suffix Halogen free product for packing code suffix "H" Halogen free product for packing code suffix “H” Mechanical data Moisture Sensitivity Level 1 • Epoxy : UL94-V0 rated flame retardant Polarity: Color band denotes cathode end ___ : Molded plastic, SOD-123H • Case MARKING: S 4 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 MAXIMUM RATINGS ( Ta=25 ℃ unless • Polarity : Indicated by cathode bandotherwise noted ) Symbol • Mounting Position : Any Dimensions in inches and (millimeters) Parameter Value Unit 40 V 28 V 350 mA Peak Repetitive Reverse VRRM • Weight : Approximated 0.011 gram Voltage VRWM VR Working Peak Reverse Voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DC Blocking Voltage Ratings at 25℃ ambient temperature unless otherwise specified. RMS60Hz, Reverse Voltage VR(RMS) Single phase half wave, resistive of inductive load. For capacitive load, derate current by 20% Forward Continuous Current IO RATINGS Peak Repetitive IFRM Marking Code Forward FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 1 Current @t≤1s 12 13 14Sine Wave 15 Non-Repetitive Peak Forward Surge [email protected] Half IFSM VRRM Maximum Recurrent Peak Reverse Voltage Power Dissipation 20 30 40 10 100 80 115 150 120 200 Vo 21 28 35 42 56 mW 70 105 140 Vo Resistance From Junction 20 30 VDC To Ambient Operating Temperature Tj Average Forward Maximum Rectified Current IO 40 50 60 667 80 ℃/W 100 150 200 Vo VRMS Maximum RMS Voltage 14 RΘJADC BlockingThermal Maximum Voltage Storage Temperature T stg Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) J ELECTRICAL CHARACTERISTICS(T a=25℃Cunless TJ Operating Temperature Range ParameterRange Storage Temperature Symbol Reverse voltage V(BR) CHARACTERISTICS -55 to +125 Test conditions @T A=125℃ Typ Min - 65 to +175 VF VR=20V 0.50 IR VR=10V 0.70 Max 0.85 Ctot trr 5 0.5 2 10 1 0.32 VF 2- Thermal Resistance From Junction to Ambient 2012-06 P ℃ Unit ℃ V 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IF=5mA 2012-11 ℃ 40 0.27 Reverse recovery time Am -55 to +150 IF=1mA NOTES: Total capacitance ℃ IR=100μA Am 40 120 otherwise specified) VR=30V Maximum Forward Voltage at 1.0A DC Forward voltage ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN IR Reverse current Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG -55~+125 1.0 -55~+150 30 IFSM RΘJA Typical Thermal Resistance (Note 2) 50 A 15 18 150 PD 16 60 IF=20mA 0.37 IF=200mA 0.6 0.9 μA 0.92 Vo mA V VR=0V,f=1MHz 50 pF IF= IR=200mA, Irr=0.1×IR, RL=100Ω 10 ns WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SD103AX THRU SOD-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Typical Characteristics 0.146(3.7) 0.130(3.3) Reverse 1000 0.012(0.3) Typ. Characteristics 0.071(1.8) 0.056(1.4) (uA) Ta=100℃ MIL-STD-19500 /228T =100℃ a •100RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant T =25℃ •10Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 a REVERSE CURRENT IR FORWARD CURRENT IF (mA) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Forward Characteristics 1000 • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 100 10 0.040(1.0) 0.024(0.6) Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. 1 Method 2026 • Polarity : Indicated by cathode band • 1Mounting Position : Any 200 300 400 • Weight : 100 Approximated 0.011 gram FORWARD VOLTAGE VF Dimensions in inches and (millimeters) 500 0.1 600 0 10 (mV) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VR (V) a (mW) 40 Marking Code 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 30 20 superimposed on rated load (JEDEC method) 10 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 0 0 5 10 RΘJA Typical Thermal Resistance (Note 2) 15 20 TSTG 25 150 PD VRRM CAPACITANCE BETWEEN TERMINALS CT (pF) Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave REVERSE VOLTAGE 40 f=1MHz SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS 30 Power Derating Curve 200 POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave,Capacitance 60Hz, resistive of inductive load. Characteristics 50 For capacitive load, derate current by 20% T =25℃ 20 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 1.0 30 100 50 -55 to +125 0 Am 40 120 30 Am ℃ P -55 to +150 ℃ - 65 to +175 0 25 50 75 100 ℃ 125 AMBIENT TEMPERATURE (℃ ) REVERSE VOLTAGE VR (V) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MHTaFM1100-MH FM1150-MH FM1200-MH UN CHARACTERISTICS Vo 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.5 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SD103AX THRU SOD-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOD-523 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of .014(0.35) .009(0.25) .051(1.30) .043(1.10) Mechanical data Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .035(0.90) .028(0.70) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .028(0.70) .020(0.50) .008(0.20) .002(0.05) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo RMS 14 21 28 35 42 56 70 105 140 Vo DC 20 30 40 50 60 80 100 150 200 Vo .067(1.70)V Maximum DC Blocking Voltage V .059(1.50) I Maximum Average Forward Rectified Current Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 CHARACTERISTICS Am ℃/ P ℃ - 65 to +175 .006(0.15)MIN. ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Am -55 to +150 TSTG Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 O IFSM @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.C CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SD103AX THRU SOD-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Features Pb Free Product PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) Device PN Packing high efficiency. • Low power loss, 0.130(3.3) (1)low (2)forward voltage drop. • High current capability, SD103AX ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumof WILLAS. Customers using or selling WILLAS components for use in Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR m such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.