MCC
WILLAS
FM120-M+
ES2A-L
SD103xWS
THRU
SOD-323
Diodes
omponents
1.0A
SURFACE
Plastic-Encapsulate
FM1200-M+
THRU
SCHOTTKY
BARRIER
RECTIFIERS
-20V- 200V
MOUNT
20736
Marilla
Street Chatsworth
Micro Commercial Components
Pb Free Product
SOD-123+ PACKAGE
ES2J-L
!"#
Package outline
SCHOTTKY BARRIER DIODE
TM
$
% !"#
FEATURES
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
z
Low
Forward
Voltage Drop
profile surface mounted application in order to
• Low
optimize
board
space.
z
Guard
Ring
Construction
for Transient Protection
• Lead
Free
Finish/RoHS
Compliant(Note 1) ("P" Suffix designates
power
loss,
high efficiency.
•Low
z
Negligible
Recovery
Time
information)
current
low ordering
forward voltage
drop.
RoHS
•High
Compliant.
Reverse
capability,
See
z
Low
Reverse
Capacitance
High
surge
capability.
•
• Epoxy meets UL 94 V-0 flammability rating
for overvoltage protection.
• Guardring
z
• Moisture
Sensitivity
Level 1
• Ultra high-speed switching.
z
RoHS
product
forplanar
packing
code
"G"
epitaxial
chip,
metalsuffix
silicon
• Silicon
x Super
fast
switching
speed
underjunction.
35ns
parts
meet environmental
of "H"
• Lead-free
Halogen
free
product
for
packing
code
x Marking
: Cathode
band
and standards
typesuffix
number
(No '-L' Suffix)
Features
Features
Maximum Ratings
z
MIL-STD-19500 /228
Polarity:
Colorforband
denotes
cathode
end
packing
code suffix
"G"
• RoHS product
Halogen free product for packing code suffix "H"
MARKING:
SD103AWS:
Mechanical
data S4
SD103BWS:
S5 -65к to +175к
• Operating
Temperature:
UL94-V0 rated flame
• Epoxy :SD103CWS:
S6 retardant
• Storage Temperature: -65к to +175к
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Maximum
Ratings
and
Electrical
Characteristics,
Single
Diode @TA=25℃
• Terminals
:Plated
terminals,
solderable
per MIL-STD-750
SOD-323
SOD-123H
+
2 Amp Super Fast
Recovery Rectifier
50 to 600 Volts
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
-
DO-214AC
(SMA) (LEAD FRAME
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
H
Maximum DC
MCC
MethodMaximum
2026
Parameter
Symbol
SD103AWS
SD103BWS
SD103CWS
Maximum
Blocking
Recurrent
Part• Polarity
Number
Dimensions in inches and (millimeters)
: Indicated by cathode band
Peak Repetitive Peak Reverse
Voltage
VRRM
RMS
Voltage
Voltage
Peak Reverse
• Mounting Position : Any
Voltage
40
30
20
Working Peak Reverse Voltage
VRWM
• Weight : Approximated 0.011 gram
ES2A-LVoltage
50V
35V
50V
VR
DC Blocking
ES2B-LVoltage
100V
70V
MAXIMUM RATINGS
AND ELECTRICAL
CHARACTERISTICS
RMS Reverse
VR(RMS)
28 100V
21
14
ES2D-L
200Vunless otherwise140V
200V
Ratings
at 25℃ ambient temperature
specified.
Forward Continuous Current
IFM
350
SingleES2G-L
phase half wave, 60Hz, 400V
resistive of inductive load.
280V
400V
Repetitive Peak
Forward Current
@t≤1.0s
IFRM
1.5
by 20%
ES2J-Lload, derate current
600V
420V
600V
For capacitive
Unit
J
V
V
mA
AA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
E
Electrical Characteristics
@ 25°C Unless
Otherwise Specified
D
Pd
Power Dissipation
Thermal
Resistance Junction to Ambient
Marking Code
Average
Forward
I
Maximum Recurrent
Peak Reverse VoltageF(AV)
Operating
Temperature
RθJA
2.0A
VRRMTj
200
12
20
13
TL= 110
30 к
14
40
500
15
16
50
60
-55~+125
F18
80
mW
℃/W
115
10
100
150
℃
Current
G56
21
28
35
42
70
105
VRMS
TSTG 14
-55~+150
℃
Peak
Forward
Surge
I
50A
8.3ms,
half
sine
DIMENSIONS
FSM
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
VDC
Current
MM
Maximum Average Forward Rectified Current
IO
1.0 INCHES
DIM
MIN
MAX
MIN
Electrical
Maximum
Ratings @TA=25℃
A
.079
.096
2.00
Peak Forward Surge Current 8.3 ms single half sine-wave
B 30
.050
.064
1.27
Instantaneous
IFSM
Parameter
Symb
C
.002
.008
.05
superimposed on rated load (JEDEC method)
Min.
Typ.
Max.
Unit
Conditions
Forward Voltage
D
--.02
--ol
Typical Thermal Resistance (Note 2)
RΘJA
E 40
.030
.060
.76
VF
.95V
ES2A-L-ES2D-L
IFM = 2.0A;TJ=25oC
F120
.065 .091
1.65
Typical Junction
Capacitance
(Note 1)
CJ
Reverse
Breakdown
Voltage
G
.189
.220
4.80
ES2G-L
1.25V
-55
to
+125
to.181
+150
Operating Temperature Range
TJ
H
.157 I-55
4.00
SD103AWS
=100μA
40
R
1.70V
ES2J-L
J to +175
.090
.115
2.25
V (BR)R
V
65
Storage Temperature Range
TSTG
o
IR=100μA
SD103BWS .975V(Typ) 30
I
=
2.0A;T
J=150 C
ES2J-L
FM
MaximumTemperature
RMS Voltage
Storage
120
200
B
Volts
140
Volts
200
Volts
Amp
MAX
2.44
1.63
.20
.51
1.52
2.32
5.59
4.60
2.92
N
Amp
℃/W
PF
℃
℃
SUGGESTED SOLDER
=100μA FM1150-MH FM1200-MH UNIT
SD103CWS SYMBOL FM120-MH
20 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MHIRFM1100-MH
CHARACTERISTICS
PAD LAYOUT
Maximum
DC
Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VFVF
0.50 0.37
0.70
0.85
IF=20mA
1.25V(Max)
Forward
voltage
Reverse
Current
At at @TIA=25℃
R
Maximum
Average
Reverse Current
Rated
DC Blocking
Rated
DC Blocking
Voltage
Reverse
@T A=125℃
5µA
1mA
IR
current
Voltage
SD103AWS
Maximum Reverse
Trr of 4.0 VDC. 35ns
IRM
1- Measured at 1 MHZ and applied reverse voltage
SD103BWS
Recovery Time
2- Thermal Resistance From Junction to Ambient
SD103CWS
CJ
15pF
Typical Junction
Capacitance
Capacitance between terminals
CT
NOTES:
TA = 25к
TA = 100к
0.60
IF=0.5A, IR=1.0A,
5.0
Irr=0.25A
Measured at
1.0MHz, VR=4.0V
50
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
Reverse Recovery Time
2012-06
2013-03
trr
10
V
0.5
10
μA
0.090”
IF=200mA
mAm
VR=30V
0.085”
VR=20V
VR=10V
pF
ns
VR=0V,f=1.0MHz
IF=IR=200mA
0.070”
Irr=0.1XIR,RL=100Ω
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SD103xWS
FM1200-M+
SOD-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Forward
350
SD103AWS
Characteristics
RATINGS
10
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC 1Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
Ta=25℃
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed0.1on rated load (JEDEC method)
0
100
200
300
Typical Thermal Resistance (Note
2) VOLTAGE
FORWARD
Typical Junction Capacitance (Note 1)
400
VF
500
600
(mV)RΘJA
1
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
28
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
1.0
30
0
10
Amp
Ta=25℃
Amp
20
40
REVERSE VOLTAGE
120
-55 to +125
TJ
(V)30
VR
40
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
Power Derating Curve
250
T =25℃
CHARACTERISTICS
SYMBOLa FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
40
Maximum Average Reverse Current at @T A=25℃
f=1MHz
(mW)
VF
Maximum Forward Voltage at 1.0A DC
0.50
0.70
30
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
20
0.9
0.85
200
0.5
0.92
Volts
mAm
10
PD
IR
@T A=125℃
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
10
50
150
100
50
10
0
2012-06
2013-03
Ta=100℃
0.1
Storage Temperature Range
TSTG
Capacitance Characteristics
Rated DC Blocking Voltage
100
CJ
Operating Temperature Range
(uA)
Maximum Recurrent Peak Reverse Voltage
NOTES:
Characteristics
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
REVERSE CURRENT IR
(mA)
IF
Ta=100℃
Marking Code
Reverse
1000
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
ambient temperature unless otherwise specified.
100
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
FORWARD CURRENT
Dimensions in inches and (millimeters)
5
10
15
REVERSE VOLTAGE
20
VR
25
(V)
30
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SD103xWS
THRU
FM1200-M+
SOD-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Outline Drawing
SOD-323
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.010(0.25)
.016(0.40)
Halogen free product for packing code suffix "H"
.075(1.90)
Mechanical data
0.071(1.8)
0.056(1.4)
.045(1.15)
.091(2.30)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.057(1.45)
.106(2.70)
.043(1.10)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.059(1.50)
.031(0.80)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.004(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
NOTES:
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
.016(0.40)
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
.010(0.25)
VF
Maximum Forward Voltage at 1.0A DC
1.0
30
TSTG
Rated DC Blocking Voltage
.008(0.20)
.004(0.10)
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
Volts
mAm
10
.010(0.25)MIN.
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
Rev.C
2012-06
2013-03
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SD103xWS
THRU
FM1200-M+
SOD-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(1) (2)
capability.
• High surge
Part Number ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Packing code, Tape & Reel Packing Ultra high-speed switching.
•Note: (1)
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical
data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Volts
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amp
Maximum Average
Forward Rectified Current
IO
1.0
Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature
Range
T
J
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average
Reverse Current at @T A=25℃
IR
mAmp
10
@T A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2013-03
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.