BAT4xWS(SOD 323)

WILLAS
FM120-M+
BAT4xWSTHRU
FM1200-M+
SOD-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
FEATURES
• Batch process design, excellent power dissipation offers
SOD-123H
SOD-323
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
+
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
Pb-Free
package is available
• Ultra high-speed switching.
epitaxial
chip, metal
junction.
• Silicon
RoHS
product
forplanar
packing
codesilicon
suffix
”G”
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen
free product
MIL-STD-19500
/228 for packing code suffix “H”
-
product for packing
code
• RoHSSensitivity
Moisture
Level
1 suffix "G"
Halogen
free
product
for
packing
code suffix
Polarity: Color band denotes cathode
end"H"
Mechanical
data
MARKING:
BAT42WS
S7
UL94-V0 rated
• Epoxy :BAT43WS
S8flame retardant
: Molded and
plastic,
SOD-123HCharacteristics, Single Diode0.031(0.8)
• CaseRatings
Maximum
Electrical
@TA=25℃
Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Parameter
Symbol
• Polarity : Indicated by cathode band
Peak Repetitive Peak reverse voltage
• Mounting Position : Any
Working Peak
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
BAT42WS/BAT43WS
Unit
Dimensions in inches and (millimeters)
VRRM
VRWM
30
V
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
21
V
RMS Reverse Voltage
V
DC Blocking
VR
Voltage
R(RMS)
Ratings at 25℃ ambient temperature unless otherwise specified.
IFM
Forward
Continuous
Single phase
half wave,Current
60Hz, resistive of inductive load.
For
capacitive
load,
derate
current
by
20%
Repetitive Peak Forward [email protected]<1.0s
RATINGS
Peak
forward surge current @<10ms
Marking Code
IFRM
IFSM
12
20
13
30
14
40
VRRM
Pd
Thermal
Resistance Junction to Ambient
Maximum DC Blocking Voltage
VRMS
14
21
28
VDC
20
30
40
Maximumtemperature
Average Forward Rectified Current
Storage
Peak Forward Surge Current 8.3 ms single half sine-wave
Electrical
Ratings @TA=25℃
superimposed on rated load (JEDEC
method)
Parameter
Typical Junction Capacitance (Note 1)
Operating
Range
ReverseTemperature
Breakdown
Voltage
Storage Temperature Range
All Types
CHARACTERISTICS
BAT42WS
Maximum Forward Voltage at 1.0A DC
Forward
voltage
Maximum
Average
Reverse Current BAT42WS
at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
BAT43WS
NOTES:
BAT43WS
RθJA
Symbol
2-Reverse
Thermal Resistance
currentFrom Junction to Ambient
Reverse Recovery Time
2012-06
2012-11
mA
4.0
Min.
TJ
V (BR)R
30
TSTG
16
60
18
80
10
100
35
42
56
70
50
60
80
100
-55~+125
CJ
Typ.
Max.
-55 to +125
VF
1.0
30
V 1.0
V
115
150
mW
120
200
Volts
℃/W
150
140
Volts
200
Volts
105
Amp
℃
Amp
40
120
Unit
A
℃/W
Conditions
- 65 to +175
PF
-55 10µA
to +150
=
IR
℃
℃
IF=200mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
VF
0.50
VF
VF
0.4
0.65
IR
0.26
V
IF=10mA
0.70
V
0.85
0.5
10
0.9
IF=50mA
0.33
V
VF
0.45
V
IF=15mA
IR
0.5
µA
VR=25V
CT
10
pF
VR=1.0V,f=1.0MHz
trr
5
ns
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Capacitance between terminals
500
15
50
200
IT
OSTG
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum
Recurrent Peak Reverse Voltage
Power
Dissipation
Maximum RMS Voltage
200
0.92
Volts
mAm
IF=2mA
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT4xWSTHRU
FM1200-M+
SOD-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Typical Characteristics
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT4xWSTHRU
FM1200-M+
SOD-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOD-323
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.091(2.30)
.010(0.25)
.016(0.40)
Mechanical data
.075(1.90)
.059(1.50)
.045(1.15)
•
.057(1.45)
.106(2.70)
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.043(1.10)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.031(0.80)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.004(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volt
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volt
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volt
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
.008(0.20)
.004(0.10)
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
.016(0.40)
0.50
.010(0.25)
0.70
0.85
0.5
0.9
0.92
Volt
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.010(0.25)MIN.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
WILLAS ELECTRONIC
Rev.C CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT4xWSTHRU
FM1200-M+
SOD-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(1) (2)
capability.
• High surge
Part Number ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
Packing code, Tape & Reel Packing switching.
• Ultra high-speed
epitaxial
planar
chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product Ratings atspecification herein, to make corrections, modifications, enhancements or other 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volt
VRRM
which may be included on WILLAS data sheets and/ or specifications can Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volt
Maximum DC
Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Amp
Maximum Average
Forward Rectified Current
WILLAS does not assume any liability arising out of the application or IO
1.0
use of any product or circuit. Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-55 to +125
-55 to +150
TJ
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
or indirectly cause injury or threaten a life without expressed written approval Volt
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average
Reverse Current at @T A=25℃
IR
mAm
10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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