1N5400 1N5408(DO 201AD)

WILLAS
1 FM1
TH
THRU
0 AMP GENERAL PURPOSE SILICON RECTIFIER - 50V-1000V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
DO-1$'3ACKAGE
SOD-123+ PACKAGE
1 FM12
Pb Fre
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
FEATURES
*
*
*
*
*
optimize board space.
Low cost
• Low power loss, high efficiency.
Low leakage
current
capability,
low forward voltage drop.
• High
Low
forward
voltage
drop
surgecapability
capability.
• High
High
current
RoHS
product for
code suffix
"G"
forpacking
overvoltage
protection.
• Guardring
Halogen
product forswitching.
packing code suffix "H"
high-speed
• Ultra free
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
DO-201AD
Level chip,
1
* Moisture
epitaxial planar
metal silicon junction.
• Silicon Sensitivity
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500
/228
MECHANICAL
DATA
*
*
*
*
*
Case:
Molded
plastic
product
for packing code suffix "G"
• RoHS
Epoxy:
UL 94V-O
rate flame
retardant
Halogen
free product
for packing
code suffix "H"
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight:
grams rated flame retardant
: UL94-V0
• Epoxy1.19
Mechanical data
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ
Method
MAXIMUM RATINGS
AND2026
ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
• Polarity : Indicated by cathode band
Mounting
Position
: Any by 20%.
For• capacitive
load,
derate current
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Single phase, half wave, 60 Hz, resistive or inductive load.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
Ratings at 25℃ ambient temperature unless otherwise specified.
SYMBOL
RATINGS
Single
phase half wave, 60Hz, resistive of inductive load. VRRM
Maximum Recurrent Peak Reverse Voltage
ForMaximum
capacitive
derate current by 20%
VRMS
RMSload,
Voltage
Maximum DC Blocking Voltage
RATINGS
Maximum Average Forward Rectified Current
.375” Code
(9.5mm) lead length at T L = 105oC
Marking
50
100
200
400
600
800
1000
Volts
35
70
140
280
420
560
700
Volts
50
100
200
400
600
800
1000
Volts
Amps
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150IO
Peak Forward
Surge Peak
CurrentReverse
8.3 ms single
half sine-wave
Maximum
Recurrent
Voltage
VRRM
I FSM
12
20
13
30
14
40
Maximum
Voltage
Typical RMS
Junction
Capacitance (Note)
VRMS
CJ
14
21
28
superimposed on rated load (JEDEC method)
Typical DC
Thermal
Resistance
Maximum
Blocking
Voltage
Operating and Storage Temperature Range
Maximum Average Forward Rectified Current
VDC
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS
JC
VDCRθJ A / Rθ20
T J , T STG
IO
40
50
150
15
16
60
18
80
35
40
42
56
60
80
3050
/ 20
-55 to + 150
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
IFSM SYMBOL
CHARACTERISTICS
superimposed on rated load (JEDEC method)
VF
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum
DC Reverse
Current
@T A = 25 oC
Typical
Thermal
Resistance
(Note 2)
RΘJA
o
at Rated DC Blocking Voltage
@T A = 100 C
IR
Typical Junction Capacitance (Note 1)
CJ
Maximum Full Load Reverse Current Average, Full Cycle
o
Operating
Temperature
TJ
.375” (9.5mm)
lead lengthRange
at TL = 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
30
3.0
1N5400 1N5401 1N5402 1N5404 1N5406
1.1
5.0
50
-55 to +125
30
1.0
30
1N5407
40
120
10
115
150
70
105
100
Amps
pF
C/100
W
0
C
0
150
1N5408 UNITS
Volts
uAmps
uAmps
-55
to +150
- 65 to +175
NOTESTemperature
: Measured at 1 Range
MHZ and applied reverse voltage of 4.0 volts TSTG
Storage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
2013-08
Maximum Average Reverse Current at @T A=25℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-M
VF
IR
0.50
0.70ELECTRONIC
0.85 CORP. 0.9
WILLAS
0.5
WILLAS
1 FM1
TH
THRU
0 AMP GENERAL PURPOSE SILICON RECTIFIER - 50V-1000V
1 FM12
1.0A SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
DO-1$'3ACKAGE
SOD-123+ PACKAGE
Pb Fre
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
200
optimize board space.
NON-REPETITIVE
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
100
0.012(0.3) Typ
50
REP
8.3ms Single Half
Sine-Wave
(JEDED Method)
MIL-STD-19500 /228
10
• RoHS product for packing code suffix "G"
1
5
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
ETIT
IVE
10
50
100
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Ty
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
2013-08
Maximum Average Reverse Current at
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-
VF
Maximum Forward Voltage at 1.0A DC
@T A=25℃
IR
0.50
0.70
0.85
WILLAS ELECTRONIC
CORP.
0.5
0.9
WILLAS
1
0 AMP GENERAL PURPOSE SILICON RECTIFIER - 50V-1000V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
DO-1$'3ACKAGE
SOD-123+ PACKAGE
Features
FM120-M
THRU
THRU
1 FM1200-M
Pb Free Produ
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Ordering
Information:
optimize
board space.
SOD-123H
0.146(3.7)
loss, high efficiency.
• Low power
Device PN Packing 0.130(3.3)
low
forward
voltage
drop.
• High current capability,
(1) (2)
Part Number ‐T
surge capability. G ‐WS • High
Tape & Ammo Pack box:1.2 Kpcs/box (1) (2) protection.
for overvoltage
• Guardring
G ‐WS Part Number ‐F
• Ultra high-speed switching.
Note: (1)
Packing code, Tape & Ammo Pack box epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free parts meet environmental standards of
•(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
WILLAS reserves the right to make changes without notice to any product ***Disclaimer*** SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
specification herein, to make corrections, modifications, enhancements or other 12
13
14
15
16
18
10
115
120
changes. WILLAS or anyone on its behalf assumes no responsibility or liability 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
for any errors or inaccuracies. Data sheet specifications and its information Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
contained are intended to provide a product description only. "Typical" parameters Maximum Average Forward Rectified Current
IO
1.0
which may be included on WILLAS data sheets and/ or specifications can Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
and do vary in different applications and actual performance may vary over time. superimposed
on rated load (JEDEC method)
40
Typical
Thermal
Resistance (Note 2)
RΘJA
WILLAS does not assume any liability arising out of the application or 120
Typical Junction Capacitance (Note 1)
CJ
use of any product or circuit. -55 to +125
-55 to +150
Operating
Temperature Range
TJ
65
to
+175
Storage
Temperature
Range
TSTG
WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
life‐saving implant or other applications intended for life‐sustaining or other related 0.5
Maximum Average Reverse Current at @T A=25℃
IR
applications where a failure or malfunction of component or circuitry may directly 10
@T A=125℃
Rated
DC Blocking Voltage
or indirectly cause injury or threaten a life without expressed written approval NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
of WILLAS. Customers using or selling WILLAS components for use in 2- Thermal Resistance From Junction to Ambient
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code
2012-06
2013-08
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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