DTC124EUA(SOT 323)

WILLAS
FM120-M+
DTC124EUATHRU
NPN
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features
• Low profile surface mounted application in order to
SOT-323
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
SOD-123H
package
available
• Pb-Free
optimize
boardisspace.
powerfor
loss,
high efficiency.
RoHS• Low
product
packing
code suffix ”G”
current capability, low forward voltage drop.
• High
Halogen
free
product for packing code suffix “H”
• High surge capability.
• Epoxy meets UL 94 V-0 flammability rating
• Guardring for overvoltage protection.
• Moisure Sensitivity Level 1
• Ultra high-speed switching.
• Built-in bias resistors enable the configuration of an inverter circuit
• Silicon epitaxial planar chip, metal silicon junction.
without connecting external input resistors
• Lead-free parts meet environmental standards of
• The bias
resistors consist
MIL-STD-19500
/228 of thin-film resistors with complete
isolation
to allow
negative
biasing
of the
product
for packing
code suffix
"G"input. They also have the
• RoHS
advantage
of almost
completely
eliminating
parasitic effects.
Halogen
free product
for packing
code suffix "H"
• Only the
on/off
conditions
need
to
be
set
for
operation, making
Mechanical data
device design easy
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
:Plated
terminals,
solderable per MIL-STD-750
Absolute• Terminals
maximum
ratings
@ 25к
0.012(0.3) Typ.
.096(2.45)
.078(2.00)
0.071(1.8)
0.056(1.4)
.010(0.25)
.003(0.08)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.054(1.35)
.045(1.15)
.087(2.20)
.070(1.80)
Method
2026
Symbol
Parameter
Min
Typ
Max
Unit
Dimensions in inches and (millimeters)
VCC
Supply voltage
--50
--V
• Polarity
: Indicated by cathode band
VIN
Input voltage
-10
--40
V
Mounting
Position
:
Any
•
IO
30
Output current
----mA
IC(MAX) • Weight : Approximated 0.011 gram
100
Pd
Power dissipation
--200
--mW
ć
Tj
Junction temperature
--150
--MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Tstg
Storage temperature
-55
--150
ć
Ratings at 25℃ ambient temperature unless otherwise specified.
.056(1.40)
Single phase half wave, 60Hz, resistive of inductive load.
RATINGS
Symbol
Parameter
Marking Code
VI(off)
Input voltage (VCC=5V, IO=100­A)
Maximum
Recurrent Peak(V
Reverse
Voltage
VI(on)
O=0.2V, IO=5mA)
VO(on)
Output
voltage (I=
Maximum
RMS
Voltage
O/II 10mA/0.5mA)
II =
Input current (VI 5V)
Maximum
DC Blocking Voltage
IO(off)
Output current (VCC
=
=50V, VI 0)
Maximum
Average
Forward
GI
DC current
gain Rectified
(VO=5V,
=
ICurrent
O 5mA)
R1
Input resistance
Peak Forward Surge Current 8.3 ms single half sine-wave
R2/R1
Resistance ratio
superimposed
on rated load
(JEDEC method)
Transition
frequency
fT
(VO =10V,
IO=5mA,
f=100MHz)
Typical Thermal
Resistance
(Note
2)
.047(1.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Min
0.5
V
---RRM
--VRMS
--VDC
--56IO
15.4
0.8
IFSM
--250
RΘJA
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
Typ
Max
12 --- 13
----- 20 3.0 30
0.1 14 0.3 21
--0.36
20
30
--0.5
----22
28.6
1.0
1.2
---
Unit
V
V
V
mA
­A
14
40
15
50
18
80
28
16
60
35 .004(0.10)MAX.
42
40
50
60
1.0
30
K¡
MHz
10
100
115
150
120
200
56
70
105
140
80
100
150
200
.016(0.40)
.008(0.20)
.043(1.10)
.032(0.80)
load, derate current by 20%
For capacitive
Electrical
Characteristics @ 25к
40in inches and (millimeters)
Dimensions
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
Suggested Solder
CHARACTERISTICS
Maximum Forward Voltage at 1.0A
DC
*Marking:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
PadFM180-MH
LayoutFM1100-MH FM1150-MH FM1200-MH
25
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.9
0.85
0.70
0.92
0.5
0.90
10
NOTES:
1.90
mm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC124EUATHRU
NPN
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Features
Typical Characteristics
Package outline
ON Characteristics
OFF Characteristics
• Batch process design, excellent power dissipation offers
100
10
better reverse leakage current and thermalVresistance.
=0.2V
SOD-123H
O
• Low profile surface mounted application in order to
optimize board space.
30
3
(mA)
a
•
0.012(0.3) Typ.
I0
a
1
0.146(3.7)
0.130(3.3)
Ta=100℃
1
OUTPUT CURRENT
INPUT VOLTAGE
VI(ON)
(V)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
10• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
3
T =25metal
℃
silicon junction.
• Silicon epitaxial planar chip,
standards
of
• Lead-free parts meet environmental
T =100
℃
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
0.3
Ta=25℃
0.1
Mechanical data
0.03
0.3
• Epoxy : UL94-V0 rated flame retardant
0.1
0.1
1
10
100
30
3
SOD-123H
• Case :0.3Molded plastic,
,
OUTPUT
CURRENT
I
(mA)
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
V =5V
CC
0.01
0.4
0.8
0.031(0.8) Typ.
1.2
1.6
INPUT VOLTAGE
O
VI(OFF)
2.0
0.031(0.8) Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
VO(ON) —— IO
1000• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
GI
1000
IO/II=20
——
IO
VO=5V
100
RATINGS
VRRM
12
20
Maximum
30 RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
Ta=25℃
Maximum Recurrent Peak Reverse Voltage
10
Peak Forward
Surge Current
8.3 ms single
1
10 half sine-wave
30
3
superimposed on rated loadOUTPUT
(JEDECCURRENT
method) IO (mA)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range CO
TJ
——
VR
Range
0.3
16
60
18
80
35
42
50
60
1.0
3
30
1
40
120
-55 to +125
PD ——
10
100
115
150
120
200
56
70
105
140
80
100
150
200
10
5
OUTPUT CURRENT
IO
30
100
(mA)
-55 to +150
Ta
- 65 to +175
400
350
(mW)
PD
POWER DISSIPATION
(pF)
CO
OUTPUT CAPACITANCE
40
15
50
IR
@T A=125℃
6
28
3
1
0.1
100
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
14
40
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
8
Maximum Forward Voltage at 1.0A DC
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
30
f=1MHz
Ta=25℃
CHARACTERISTICS
10
21
TSTG
Ta=25℃
13
30
RΘJA
Typical Thermal Resistance (Note 2)
Storage10 Temperature
Ta=100℃
100
30
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Ta=100℃
Marking Code
GI
VO(ON)
OUTPUT VOLTAGE
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
DC CURRENT GAIN
(mV)
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
4
2- Thermal Resistance From Junction to Ambient
2
0.50
0.70
300
0.92
10
250
200
0.9
0.85
0.5
DTC124EUA
150
100
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC124EUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
Device PN Packing high efficiency.
• Low power loss,
0.130(3.3)
(1)low
(2)forward voltage drop.
• High current capability,
DTC124EUA –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
Storage
Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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