WILLAS FM120-M+ DTC124EUATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Features • Low profile surface mounted application in order to SOT-323 0.146(3.7) 0.130(3.3) .004(0.10)MIN. SOD-123H package available • Pb-Free optimize boardisspace. powerfor loss, high efficiency. RoHS• Low product packing code suffix ”G” current capability, low forward voltage drop. • High Halogen free product for packing code suffix “H” • High surge capability. • Epoxy meets UL 94 V-0 flammability rating • Guardring for overvoltage protection. • Moisure Sensitivity Level 1 • Ultra high-speed switching. • Built-in bias resistors enable the configuration of an inverter circuit • Silicon epitaxial planar chip, metal silicon junction. without connecting external input resistors • Lead-free parts meet environmental standards of • The bias resistors consist MIL-STD-19500 /228 of thin-film resistors with complete isolation to allow negative biasing of the product for packing code suffix "G"input. They also have the • RoHS advantage of almost completely eliminating parasitic effects. Halogen free product for packing code suffix "H" • Only the on/off conditions need to be set for operation, making Mechanical data device design easy • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , :Plated terminals, solderable per MIL-STD-750 Absolute• Terminals maximum ratings @ 25к 0.012(0.3) Typ. .096(2.45) .078(2.00) 0.071(1.8) 0.056(1.4) .010(0.25) .003(0.08) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .054(1.35) .045(1.15) .087(2.20) .070(1.80) Method 2026 Symbol Parameter Min Typ Max Unit Dimensions in inches and (millimeters) VCC Supply voltage --50 --V • Polarity : Indicated by cathode band VIN Input voltage -10 --40 V Mounting Position : Any • IO 30 Output current ----mA IC(MAX) • Weight : Approximated 0.011 gram 100 Pd Power dissipation --200 --mW ć Tj Junction temperature --150 --MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tstg Storage temperature -55 --150 ć Ratings at 25℃ ambient temperature unless otherwise specified. .056(1.40) Single phase half wave, 60Hz, resistive of inductive load. RATINGS Symbol Parameter Marking Code VI(off) Input voltage (VCC=5V, IO=100A) Maximum Recurrent Peak(V Reverse Voltage VI(on) O=0.2V, IO=5mA) VO(on) Output voltage (I= Maximum RMS Voltage O/II 10mA/0.5mA) II = Input current (VI 5V) Maximum DC Blocking Voltage IO(off) Output current (VCC = =50V, VI 0) Maximum Average Forward GI DC current gain Rectified (VO=5V, = ICurrent O 5mA) R1 Input resistance Peak Forward Surge Current 8.3 ms single half sine-wave R2/R1 Resistance ratio superimposed on rated load (JEDEC method) Transition frequency fT (VO =10V, IO=5mA, f=100MHz) Typical Thermal Resistance (Note 2) .047(1.20) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Min 0.5 V ---RRM --VRMS --VDC --56IO 15.4 0.8 IFSM --250 RΘJA CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range Typ Max 12 --- 13 ----- 20 3.0 30 0.1 14 0.3 21 --0.36 20 30 --0.5 ----22 28.6 1.0 1.2 --- Unit V V V mA A 14 40 15 50 18 80 28 16 60 35 .004(0.10)MAX. 42 40 50 60 1.0 30 K¡ MHz 10 100 115 150 120 200 56 70 105 140 80 100 150 200 .016(0.40) .008(0.20) .043(1.10) .032(0.80) load, derate current by 20% For capacitive Electrical Characteristics @ 25к 40in inches and (millimeters) Dimensions 120 -55 to +125 -55 to +150 - 65 to +175 TSTG Suggested Solder CHARACTERISTICS Maximum Forward Voltage at 1.0A DC *Marking: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH PadFM180-MH LayoutFM1100-MH FM1150-MH FM1200-MH 25 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.9 0.85 0.70 0.92 0.5 0.90 10 NOTES: 1.90 mm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC124EUATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Features Typical Characteristics Package outline ON Characteristics OFF Characteristics • Batch process design, excellent power dissipation offers 100 10 better reverse leakage current and thermalVresistance. =0.2V SOD-123H O • Low profile surface mounted application in order to optimize board space. 30 3 (mA) a • 0.012(0.3) Typ. I0 a 1 0.146(3.7) 0.130(3.3) Ta=100℃ 1 OUTPUT CURRENT INPUT VOLTAGE VI(ON) (V) • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10• High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. 3 T =25metal ℃ silicon junction. • Silicon epitaxial planar chip, standards of • Lead-free parts meet environmental T =100 ℃ MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) 0.3 Ta=25℃ 0.1 Mechanical data 0.03 0.3 • Epoxy : UL94-V0 rated flame retardant 0.1 0.1 1 10 100 30 3 SOD-123H • Case :0.3Molded plastic, , OUTPUT CURRENT I (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) V =5V CC 0.01 0.4 0.8 0.031(0.8) Typ. 1.2 1.6 INPUT VOLTAGE O VI(OFF) 2.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) —— IO 1000• Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) GI 1000 IO/II=20 —— IO VO=5V 100 RATINGS VRRM 12 20 Maximum 30 RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM Ta=25℃ Maximum Recurrent Peak Reverse Voltage 10 Peak Forward Surge Current 8.3 ms single 1 10 half sine-wave 30 3 superimposed on rated loadOUTPUT (JEDECCURRENT method) IO (mA) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range CO TJ —— VR Range 0.3 16 60 18 80 35 42 50 60 1.0 3 30 1 40 120 -55 to +125 PD —— 10 100 115 150 120 200 56 70 105 140 80 100 150 200 10 5 OUTPUT CURRENT IO 30 100 (mA) -55 to +150 Ta - 65 to +175 400 350 (mW) PD POWER DISSIPATION (pF) CO OUTPUT CAPACITANCE 40 15 50 IR @T A=125℃ 6 28 3 1 0.1 100 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 8 Maximum Forward Voltage at 1.0A DC NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 30 f=1MHz Ta=25℃ CHARACTERISTICS 10 21 TSTG Ta=25℃ 13 30 RΘJA Typical Thermal Resistance (Note 2) Storage10 Temperature Ta=100℃ 100 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Ta=100℃ Marking Code GI VO(ON) OUTPUT VOLTAGE Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% DC CURRENT GAIN (mV) 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 4 2- Thermal Resistance From Junction to Ambient 2 0.50 0.70 300 0.92 10 250 200 0.9 0.85 0.5 DTC124EUA 150 100 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC124EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) Device PN Packing high efficiency. • Low power loss, 0.130(3.3) (1)low (2)forward voltage drop. • High current capability, DTC124EUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.