DTC144EUA(SOT 323)

WILLAS
FM120-M+
DTC144EUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Features
SOT-323
•
•
•
•
•
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
.004(0.10)MIN.
• Low profile surface mounted application in order to
optimize board space.
Pb-Free package is available
• Low power loss, high efficiency.
RoHS •product
for packing
code
”G”voltage drop.
High current
capability,
lowsuffix
forward
capability.
• High
Halogen
freesurge
product
for packing code suffix “H”
Epoxy• meets
ULfor
94overvoltage
V-0 flammability
rating
Guardring
protection.
Moisure
Sensitivity
Level
1
high-speed
switching.
• Ultra
Built-in• bias
resistors
the configuration
of an inverter circuit
Silicon
epitaxialenable
planar chip,
metal silicon junction.
without• Lead-free
connecting
external
input resistors
parts
meet environmental
standards of
/228of thin-film resistors with complete
The biasMIL-STD-19500
resistors consist
product
for packing
code suffix
"G"
• RoHS
isolation
to allow
negative
biasing
of the
input. They also have the
Halogen
free product
for packing
code suffixparasitic
"H"
advantage
of almost
completely
eliminating
effects.
Mechanical
data
Only the
on/off conditions
need to be set for operation, making
device• design
Epoxy : easy
UL94-V0 rated flame retardant
.010(0.25) 0.040(1.0)
.003(0.08) 0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Absolute maximumMethod
ratings2026
@ 25к
.054(1.35)
.045(1.15)
.087(2.20)
.070(1.80)
Symbol • Polarity : Indicated
Parameter
Typ
Max
Unit
Dimensions in inches and (millimeters)
by cathode band Min
VCC
Supply voltage
--50
--V
Mounting
• Input
VIN
voltagePosition : Any
-10
--40
V
--IO
--100
mA
• Output
Weightcurrent
: Approximated 0.011 gram
Pd
Power dissipation
--200
--mW
ć
Tj
Junction temperature
--150
--MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Tstg
Storage temperature
-55
--150
ć
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.047(1.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Symbol
Parameter
Min
Typ
VMaximum
0.5VRRM --Recurrent
Peak
Reverse
Voltage
Input
voltage
(VCC
=5V, IO=100­A)
I(off)
VMaximum
---VRMS --I(on)
RMS Voltage(VO=0.3V, IO=2mA)
VO(on)
Output voltage
=
(IO/II 10mA/0.5mA)
----Maximum
DC Blocking
Voltage
II =
Input
current (V
--- VDC --I 5V)
IO(off)
current
(VCC
=
=50V, VCurrent
--- IO --I 0)
MaximumOutput
Average
Forward
Rectified
GI
DC current gain (VO=5V,
=
IO 5mA)
68 --Peak
Forward
Current 8.3 ms single half sine-wave32.9
R
InputSurge
resistance
1
IFSM 47
R2superimposed
/R1
Resistance
0.8
1.0
on rated ratio
load (JEDEC method)
Transition frequency
fT
--- RΘJA250
Typical
Thermal Resistance (Note 2)
(VO =10V, IO=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
CJ
TJ
Operating Temperature Range
Storage Temperature Range
12Max
20 --14 3.0
0.3
200.18
0.5
--61.1
1.2
---
13Unit
30 V
21 V
V
30mA
­A
14
40
15
50
28
35
42
.004(0.10)MAX.
50
60
40
16
60
K¡
MHz
-55 to +125
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
*Marking: 26
18
80
1.0
30
10
100
115
150
120
200
56
70
105
140
80
100
150
200
.016(0.40)
.008(0.20)
40
120
Dimensions in inches and (millimeters)
-55 to +150
- 65 to +175
TSTG
Suggested
SolderFM1100-MH FM1150-MH FM1200-MH
FM160-MH FM180-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.056(1.40)
.043(1.10)
.032(0.80)
RATINGS
Electrical Characteristics
@ 25к
@T A=125℃
0.50
0.70 Pad
Layout 0.85
0.9
0.700.5
IR
0.92
10
0.90
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90
mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144EUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
FeaturesON Characteristics
Package outline
Typical Characteristics
OFF Characteristics
• Batch process design, excellent power dissipation offers
100
1
better reverse leakage current and thermal
resistance.
V =0.3V
optimize board space.
INPUT VOLTAGE
3
a
a
MIL-STD-19500 /228
1
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.3
(mA)
VI(ON)
10
0.3
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.1
IO
(V)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
metal silicon junction.
• Silicon epitaxial planar chip,
T =25℃
standards of
• Lead-free parts meet environmental
T =100℃
OUTPUT CURRENT
30
VCC=5V
SOD-123H
O
• Low profile surface mounted application in order to
Ta=100℃
0.03
0.071(1.8)
0.056(1.4)
Ta=25℃
0.01
3E-3
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.1
30
0.1• Case :0.3
1
10
3
Molded plastic,
SOD-123H
,
OUTPUT
CURRENT
I
(mA)
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
1E-3
0.0
0.4
0.031(0.8) Typ.
O
0.8
1.2
INPUT VOLTAGE
VI(OFF)
1.6
2.0
0.031(0.8) Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
VO(ON) —— IO
• Mounting Position : Any
• Weight : Approximated 0.011 gram
1000
Dimensions in inches and (millimeters)
GI
IO/II=20
VO=5V
300
(mV)
100
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Ta=25℃
Ta=100℃
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
30
IFSM
Surge
Current 8.33 ms single half 10
sine-wave
1
OUTPUT
CURRENT
superimposed on rated load
(JEDEC
method)IO (mA)
VR
CHARACTERISTICS
(pF)
28
35
42
56
70
105
140
50
60
80
100
150
200
TJ
400
0.3
1.0
3
30
1
40
120
PD
10
IO
30
100
(mA)
-55 to +150
——
Ta
- 65 to +175
350
@T A=125℃
(mW)
IR
CO
NOTES:
4
CAPACITANCE
120
200
40
TSTG
VF
6
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
115
150
30 3
-55 to +125
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
10
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
18
80
21
f=1MHz
Ta=25℃
16
60
OUTPUT CURRENT
PD
——
8 Temperature Range
Storage
15
50
CJ
Typical Junction Capacitance (Note 1)
14
40
1
0.1
RΘJA
Typical Thermal Resistance (Note 2)
13
3010
50
POWER DISSIPATION
Maximum
RMS Voltage
30
CO
Operating Temperature Range
Ta=25℃
100
30
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
RATINGS
10
Peak Forward
0.5
DC CURRENT GAIN
VO(ON)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
GI
300
Marking Code
Ta=100℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
OUTPUT VOLTAGE
IO
——
1000
2- Thermal Resistance From Junction to Ambient
2
300
0.50
0.70
0.9
0.85
0.92
0.5
10
250
DTC144EUA
200
150
100
50
0
0
2012-06
2012-0
5
10
REVERSE BIAS VOLTAGE
15
VR
(V)
20
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144EUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1)low
(2)forward voltage drop.
DTC144EUA –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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