WILLAS FM120-M+ DTC144EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Features SOT-323 • • • • • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • .004(0.10)MIN. • Low profile surface mounted application in order to optimize board space. Pb-Free package is available • Low power loss, high efficiency. RoHS •product for packing code ”G”voltage drop. High current capability, lowsuffix forward capability. • High Halogen freesurge product for packing code suffix “H” Epoxy• meets ULfor 94overvoltage V-0 flammability rating Guardring protection. Moisure Sensitivity Level 1 high-speed switching. • Ultra Built-in• bias resistors the configuration of an inverter circuit Silicon epitaxialenable planar chip, metal silicon junction. without• Lead-free connecting external input resistors parts meet environmental standards of /228of thin-film resistors with complete The biasMIL-STD-19500 resistors consist product for packing code suffix "G" • RoHS isolation to allow negative biasing of the input. They also have the Halogen free product for packing code suffixparasitic "H" advantage of almost completely eliminating effects. Mechanical data Only the on/off conditions need to be set for operation, making device• design Epoxy : easy UL94-V0 rated flame retardant .010(0.25) 0.040(1.0) .003(0.08) 0.024(0.6) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Absolute maximumMethod ratings2026 @ 25к .054(1.35) .045(1.15) .087(2.20) .070(1.80) Symbol • Polarity : Indicated Parameter Typ Max Unit Dimensions in inches and (millimeters) by cathode band Min VCC Supply voltage --50 --V Mounting • Input VIN voltagePosition : Any -10 --40 V --IO --100 mA • Output Weightcurrent : Approximated 0.011 gram Pd Power dissipation --200 --mW ć Tj Junction temperature --150 --MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tstg Storage temperature -55 --150 ć Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .047(1.20) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Symbol Parameter Min Typ VMaximum 0.5VRRM --Recurrent Peak Reverse Voltage Input voltage (VCC =5V, IO=100A) I(off) VMaximum ---VRMS --I(on) RMS Voltage(VO=0.3V, IO=2mA) VO(on) Output voltage = (IO/II 10mA/0.5mA) ----Maximum DC Blocking Voltage II = Input current (V --- VDC --I 5V) IO(off) current (VCC = =50V, VCurrent --- IO --I 0) MaximumOutput Average Forward Rectified GI DC current gain (VO=5V, = IO 5mA) 68 --Peak Forward Current 8.3 ms single half sine-wave32.9 R InputSurge resistance 1 IFSM 47 R2superimposed /R1 Resistance 0.8 1.0 on rated ratio load (JEDEC method) Transition frequency fT --- RΘJA250 Typical Thermal Resistance (Note 2) (VO =10V, IO=5mA, f=100MHz) Typical Junction Capacitance (Note 1) CJ TJ Operating Temperature Range Storage Temperature Range 12Max 20 --14 3.0 0.3 200.18 0.5 --61.1 1.2 --- 13Unit 30 V 21 V V 30mA A 14 40 15 50 28 35 42 .004(0.10)MAX. 50 60 40 16 60 K¡ MHz -55 to +125 CHARACTERISTICS Maximum Forward Voltage at 1.0A DC *Marking: 26 18 80 1.0 30 10 100 115 150 120 200 56 70 105 140 80 100 150 200 .016(0.40) .008(0.20) 40 120 Dimensions in inches and (millimeters) -55 to +150 - 65 to +175 TSTG Suggested SolderFM1100-MH FM1150-MH FM1200-MH FM160-MH FM180-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .056(1.40) .043(1.10) .032(0.80) RATINGS Electrical Characteristics @ 25к @T A=125℃ 0.50 0.70 Pad Layout 0.85 0.9 0.700.5 IR 0.92 10 0.90 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.90 mm 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE FeaturesON Characteristics Package outline Typical Characteristics OFF Characteristics • Batch process design, excellent power dissipation offers 100 1 better reverse leakage current and thermal resistance. V =0.3V optimize board space. INPUT VOLTAGE 3 a a MIL-STD-19500 /228 1 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.3 (mA) VI(ON) 10 0.3 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.1 IO (V) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. metal silicon junction. • Silicon epitaxial planar chip, T =25℃ standards of • Lead-free parts meet environmental T =100℃ OUTPUT CURRENT 30 VCC=5V SOD-123H O • Low profile surface mounted application in order to Ta=100℃ 0.03 0.071(1.8) 0.056(1.4) Ta=25℃ 0.01 3E-3 Mechanical data • Epoxy : UL94-V0 rated flame retardant 0.1 30 0.1• Case :0.3 1 10 3 Molded plastic, SOD-123H , OUTPUT CURRENT I (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 1E-3 0.0 0.4 0.031(0.8) Typ. O 0.8 1.2 INPUT VOLTAGE VI(OFF) 1.6 2.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) —— IO • Mounting Position : Any • Weight : Approximated 0.011 gram 1000 Dimensions in inches and (millimeters) GI IO/II=20 VO=5V 300 (mV) 100 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Ta=25℃ Ta=100℃ VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO 30 IFSM Surge Current 8.33 ms single half 10 sine-wave 1 OUTPUT CURRENT superimposed on rated load (JEDEC method)IO (mA) VR CHARACTERISTICS (pF) 28 35 42 56 70 105 140 50 60 80 100 150 200 TJ 400 0.3 1.0 3 30 1 40 120 PD 10 IO 30 100 (mA) -55 to +150 —— Ta - 65 to +175 350 @T A=125℃ (mW) IR CO NOTES: 4 CAPACITANCE 120 200 40 TSTG VF 6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 115 150 30 3 -55 to +125 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 10 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 18 80 21 f=1MHz Ta=25℃ 16 60 OUTPUT CURRENT PD —— 8 Temperature Range Storage 15 50 CJ Typical Junction Capacitance (Note 1) 14 40 1 0.1 RΘJA Typical Thermal Resistance (Note 2) 13 3010 50 POWER DISSIPATION Maximum RMS Voltage 30 CO Operating Temperature Range Ta=25℃ 100 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH RATINGS 10 Peak Forward 0.5 DC CURRENT GAIN VO(ON) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% GI 300 Marking Code Ta=100℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS OUTPUT VOLTAGE IO —— 1000 2- Thermal Resistance From Junction to Ambient 2 300 0.50 0.70 0.9 0.85 0.92 0.5 10 250 DTC144EUA 200 150 100 50 0 0 2012-06 2012-0 5 10 REVERSE BIAS VOLTAGE 15 VR (V) 20 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1)low (2)forward voltage drop. DTC144EUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.