DTC144TUA(SOT 323)

WILLAS
FM120-M+
DTC144TUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Pb-Free
package is available
• Guardring for overvoltage protection.
RoHS product
for packing
code suffix ”G”
switching.
• Ultra high-speed
Silicon epitaxial planar chip, metal silicon junction.
•
Halogen free product for packing code suffix “H”
parts
environmental
standards of
• Lead-free
Epoxy meets
UL 94
V-0meet
flammability
rating
MIL-STD-19500 /228
Moisure•Sensitivity
Level
1
RoHS product
for packing
code suffix "G"
Built-in bias
resistors
enableforthe
configuration
Halogen
free product
packing
code suffix of
"H"an inverter circuit
without connecting external input resistors (see equivalent circuit)
Mechanical data
The bias resistors consist of thin-film resistors with complete
flame
isolation•toEpoxy
allow: UL94-V0
negativerated
biasing
ofretardant
the input. They also have the
advantage
of almost
completely
eliminating parasitic effects
: Molded
plastic, SOD-123H
• Case
,
Only the•on/off
conditions
need to be
set for operation,
making
Terminals
:Plated terminals,
solderable
per MIL-STD-750
device design easy Method 2026
0.146(3.7)
0.130(3.3)
Features
x
x
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
•
x
0.012(0.3) Typ.
.004(0.10)MIN.
•
SOT-323
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.054(1.35)
.045(1.15)
Absolute Maximum
Position : Any
• MountingRatings
.087(2.20)
.070(1.80)
Parameter
Value
Unit
• Weight : Approximated Symbol
0.011 gram
Collector-Base Voltage
VCBO
50
V
Collector-Emitter VoltageMAXIMUM RATINGS
VCEO AND ELECTRICAL
50
V
CHARACTERISTICS
Emitter-Base voltage
VEBO
5
V
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector Current-Continuous
IC
100
mA
Single phase half wave, 60Hz, resistive of inductive load.
Collector Dissipation
PC
200
mW
For capacitive load, derate current by 20%
к
Junction Temperature
TJ
150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
к
Storage Temperature Range
TSTG
-55~150
.056(1.40)
Marking Code
12
13
14
15
16
18
10
115
120
.047(1.20) 80
20
30
40
50
60
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
Electrical
Characteristics
Maximum
RMS Voltage
Sym
Parameter
Maximum DC Blocking
Voltage
VRMS
Min VDC
Typ
14
Max
20
21
Unit
30
28
35
42
56
70
105
140
.043(1.10)
.032(0.80)
40
50
60
80
100
150
200
Collector-Base Breakdown Voltage
50
----V
V(BR)CBOMaximum Average Forward Rectified Current
I
O
1.0
(IC=50uA, IE=0)
.004(0.10)MAX.
Collector-Emitter Breakdown Voltage
50
----V
V(BR)CEOPeak Forward Surge Current 8.3 ms single half sine-wave
(IC=1mA, IB=0)
30
IFSM
Emitter-Base Breakdown Voltage
5
----V
V(BR)EBOsuperimposed on rated load (JEDEC method)
(IE=50uA, IC=0)
40
Typical Thermal Resistance (Note 2)
RΘJA
Collector Cut-off Current
.016(0.40)
----0.5
uA
ICBO Typical Junction Capacitance (Note 1)
120
C
J
(VCB=50V, IE=0)
.008(0.20)
-55 to +125
-55 to +150
Emitter Cut-off Current
TJ --IEBO Operating Temperature Range
--0.5
uA
(V =4V, IC=0)
- 65 to +175
StorageEBTemperature
Range
TSTG
Dimensions in inches and (millimeters)
DC Current Gain
100
300
600
--hFE (VCE=5V, IC=1mA)
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Collector-Emitter
Saturation Voltage
----0.3
V
VCE(sat)
Suggested Solder
mA, IB=0.5
mA) at 1.0A DC
(IC=5Forward
0.9
Maximum
Voltage
0.92
VF
0.50
0.70
0.85
Pad Layout
K¡
R1
Input resistance
32.9
47
61.1
0.5
Maximum Average Reverse Current at @T A=25℃
IR
0.70
Transition Frequency
--250
--MHz
fT Rated DC Blocking Voltage
10
(VCE=10V, IE =-5mA, f=100MHz) @T A=125℃
NOTES:
0.90
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90
2- Thermal Resistance From Junction to Ambient
mm
*Marking:
06
0.65
2012-06
2012-0
0.65
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144TUATHRU
NPN
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Typical Characteristics
optimize board space.
high
efficiency.
• Low power loss,
Static
Characteristic
5
drop.
• High current capability, low forward voltage
COMMON
• High surge capability.
EMITTER
10uA
• Guardring for overvoltage protection. T =25℃
4
9uA
• Ultra high-speed switching.
• Silicon epitaxial planar chip,8uAmetal silicon junction.
7uA
3 • Lead-free parts meet environmental
standards of
hFE
1000
0.146(3.7)
——0.130(3.3)
IC
MIL-STD-19500 /228
hFE
6uA
• RoHS product for packing code suffix "G"
5uA
Halogen free product for packing code suffix "H"
2
4uA
Mechanical data
0.071(1.8)
0.056(1.4)
Ta=25℃
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
a
100
3uA
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
2uA
• Case : Molded plastic, SOD-123H
I =1uA
,
0 • Terminals :Plated terminals, solderable per MIL-STD-750
1
COMMON EMITTER
0.031(0.8) Typ.
VCE= 5V
0.031(0.8) Typ.
B
0
2
4
6
Method 2026 VOLTAGE
COLLECTOR-EMITTER
10
0.1
8
——
VBE
(mA)
T =2
5℃
a
12
20
Maximum RMS Voltage
VRMS
14
VDC
20
Ta=100 ℃
Ta=25℃
1
10
COLLECTOR
CURREMT
(mA)
Peak Forward Surge Current
8.3 ms
single halfICsine-wave
superimposed on rated load (JEDEC method)
Cob ——
Typical Thermal Resistance (Note
2)
10
15
50
16
60
18
80
10
100
115
150
120
200
70
105
140
150
200
21
28
35
42
56
30
40
50
60
80COMMON100
EMITTER
1.0
BASE-EMMITER VOLTAGE
30
0.1
0.1
1
-55 to +125
10
100
VBE (V)
-55 to +150
300
- 65 to +175
TSTG
POWER DISSIPATION
PD (mW)
VCE=5V
——
40 Ta
120
PD
350
Ta=25 ℃
Storage Temperature Range
14
40
1
CJ
f=1MHz
=0
IT
E J
Operating Temperature Range
13
30
IO β=10
100
IFSM
RΘJA
VCB
Typical Junction Capacitance (Note 1)
(pF)
T =1
00℃
a
VRRM
10
0.1
IC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
250
C
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
C
VF
ob
Maximum Forward Voltage at 1.0A
DC
CAPACITANCE
(mA)
10
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
RATINGS
100
Maximum Average Forward Rectified Current
1
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking Voltage
IR
DTC144TUA
0.50
200
0.70
0.9
0.85
0.92
0.5
150
10
100
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
IC
100
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Maximum DC Blocking Voltage
100
IC
Dimensions in inches and (millimeters)
Marking Code
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1000
1
COLLECTOR CURRENT
VCE (V)
• Polarity : Indicated by cathode band
: Any
• Mounting Position
VCEsat ——
IC
3000
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
Ta=100℃
50
2- Thermal Resistance From Junction to Ambient
0
0.1
0
10
20
REVERSE VOLTAGE
2012-06
2012-0
30
V
(V)
40
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144TUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
loss, high efficiency.
• Low power Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2)forward voltage drop.
DTC144TUA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
• (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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