WILLAS FM120-M+ DTC144TUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Pb-Free package is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” switching. • Ultra high-speed Silicon epitaxial planar chip, metal silicon junction. • Halogen free product for packing code suffix “H” parts environmental standards of • Lead-free Epoxy meets UL 94 V-0meet flammability rating MIL-STD-19500 /228 Moisure•Sensitivity Level 1 RoHS product for packing code suffix "G" Built-in bias resistors enableforthe configuration Halogen free product packing code suffix of "H"an inverter circuit without connecting external input resistors (see equivalent circuit) Mechanical data The bias resistors consist of thin-film resistors with complete flame isolation•toEpoxy allow: UL94-V0 negativerated biasing ofretardant the input. They also have the advantage of almost completely eliminating parasitic effects : Molded plastic, SOD-123H • Case , Only the•on/off conditions need to be set for operation, making Terminals :Plated terminals, solderable per MIL-STD-750 device design easy Method 2026 0.146(3.7) 0.130(3.3) Features x x 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • • x 0.012(0.3) Typ. .004(0.10)MIN. • SOT-323 .010(0.25) .003(0.08) 0.031(0.8) Typ. • Polarity : Indicated by cathode band 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .054(1.35) .045(1.15) Absolute Maximum Position : Any • MountingRatings .087(2.20) .070(1.80) Parameter Value Unit • Weight : Approximated Symbol 0.011 gram Collector-Base Voltage VCBO 50 V Collector-Emitter VoltageMAXIMUM RATINGS VCEO AND ELECTRICAL 50 V CHARACTERISTICS Emitter-Base voltage VEBO 5 V Ratings at 25℃ ambient temperature unless otherwise specified. Collector Current-Continuous IC 100 mA Single phase half wave, 60Hz, resistive of inductive load. Collector Dissipation PC 200 mW For capacitive load, derate current by 20% к Junction Temperature TJ 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS к Storage Temperature Range TSTG -55~150 .056(1.40) Marking Code 12 13 14 15 16 18 10 115 120 .047(1.20) 80 20 30 40 50 60 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM Electrical Characteristics Maximum RMS Voltage Sym Parameter Maximum DC Blocking Voltage VRMS Min VDC Typ 14 Max 20 21 Unit 30 28 35 42 56 70 105 140 .043(1.10) .032(0.80) 40 50 60 80 100 150 200 Collector-Base Breakdown Voltage 50 ----V V(BR)CBOMaximum Average Forward Rectified Current I O 1.0 (IC=50uA, IE=0) .004(0.10)MAX. Collector-Emitter Breakdown Voltage 50 ----V V(BR)CEOPeak Forward Surge Current 8.3 ms single half sine-wave (IC=1mA, IB=0) 30 IFSM Emitter-Base Breakdown Voltage 5 ----V V(BR)EBOsuperimposed on rated load (JEDEC method) (IE=50uA, IC=0) 40 Typical Thermal Resistance (Note 2) RΘJA Collector Cut-off Current .016(0.40) ----0.5 uA ICBO Typical Junction Capacitance (Note 1) 120 C J (VCB=50V, IE=0) .008(0.20) -55 to +125 -55 to +150 Emitter Cut-off Current TJ --IEBO Operating Temperature Range --0.5 uA (V =4V, IC=0) - 65 to +175 StorageEBTemperature Range TSTG Dimensions in inches and (millimeters) DC Current Gain 100 300 600 --hFE (VCE=5V, IC=1mA) CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Collector-Emitter Saturation Voltage ----0.3 V VCE(sat) Suggested Solder mA, IB=0.5 mA) at 1.0A DC (IC=5Forward 0.9 Maximum Voltage 0.92 VF 0.50 0.70 0.85 Pad Layout K¡ R1 Input resistance 32.9 47 61.1 0.5 Maximum Average Reverse Current at @T A=25℃ IR 0.70 Transition Frequency --250 --MHz fT Rated DC Blocking Voltage 10 (VCE=10V, IE =-5mA, f=100MHz) @T A=125℃ NOTES: 0.90 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.90 2- Thermal Resistance From Junction to Ambient mm *Marking: 06 0.65 2012-06 2012-0 0.65 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144TUATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Typical Characteristics optimize board space. high efficiency. • Low power loss, Static Characteristic 5 drop. • High current capability, low forward voltage COMMON • High surge capability. EMITTER 10uA • Guardring for overvoltage protection. T =25℃ 4 9uA • Ultra high-speed switching. • Silicon epitaxial planar chip,8uAmetal silicon junction. 7uA 3 • Lead-free parts meet environmental standards of hFE 1000 0.146(3.7) ——0.130(3.3) IC MIL-STD-19500 /228 hFE 6uA • RoHS product for packing code suffix "G" 5uA Halogen free product for packing code suffix "H" 2 4uA Mechanical data 0.071(1.8) 0.056(1.4) Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT IC (mA) a 100 3uA 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 2uA • Case : Molded plastic, SOD-123H I =1uA , 0 • Terminals :Plated terminals, solderable per MIL-STD-750 1 COMMON EMITTER 0.031(0.8) Typ. VCE= 5V 0.031(0.8) Typ. B 0 2 4 6 Method 2026 VOLTAGE COLLECTOR-EMITTER 10 0.1 8 —— VBE (mA) T =2 5℃ a 12 20 Maximum RMS Voltage VRMS 14 VDC 20 Ta=100 ℃ Ta=25℃ 1 10 COLLECTOR CURREMT (mA) Peak Forward Surge Current 8.3 ms single halfICsine-wave superimposed on rated load (JEDEC method) Cob —— Typical Thermal Resistance (Note 2) 10 15 50 16 60 18 80 10 100 115 150 120 200 70 105 140 150 200 21 28 35 42 56 30 40 50 60 80COMMON100 EMITTER 1.0 BASE-EMMITER VOLTAGE 30 0.1 0.1 1 -55 to +125 10 100 VBE (V) -55 to +150 300 - 65 to +175 TSTG POWER DISSIPATION PD (mW) VCE=5V —— 40 Ta 120 PD 350 Ta=25 ℃ Storage Temperature Range 14 40 1 CJ f=1MHz =0 IT E J Operating Temperature Range 13 30 IO β=10 100 IFSM RΘJA VCB Typical Junction Capacitance (Note 1) (pF) T =1 00℃ a VRRM 10 0.1 IC SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage 250 C CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH C VF ob Maximum Forward Voltage at 1.0A DC CAPACITANCE (mA) 10 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) RATINGS 100 Maximum Average Forward Rectified Current 1 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage IR DTC144TUA 0.50 200 0.70 0.9 0.85 0.92 0.5 150 10 100 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IC 100 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Maximum DC Blocking Voltage 100 IC Dimensions in inches and (millimeters) Marking Code 10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1000 1 COLLECTOR CURRENT VCE (V) • Polarity : Indicated by cathode band : Any • Mounting Position VCEsat —— IC 3000 • Weight : Approximated 0.011 gram 0.012(0.3) Typ. Ta=100℃ 50 2- Thermal Resistance From Junction to Ambient 0 0.1 0 10 20 REVERSE VOLTAGE 2012-06 2012-0 30 V (V) 40 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144TUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) loss, high efficiency. • Low power Device PN Packing 0.130(3.3) • High current capability, (1) low (2)forward voltage drop. DTC144TUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. • (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.