DTA114ECA(SOT 23)

WILLAS
FM120-M+
DTA114ECA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Features
• Low power loss, high efficiency.
optimize board space.
•
0.146(3.7)
0.130(3.3)
current capability,
low forward voltage drop.
• High
Pb-Free
package
is available
• High surge capability.
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
Halogen
free
productswitching.
for packing code suffix “H”
high-speed
• Ultra
Epoxy• Silicon
meetsepitaxial
UL 94 V-0
flammability
planar
chip, metal rating
silicon junction.
Moisure
Sensitivity
Level
1
• Lead-free parts meet environmental standards of
SOT-23
/228
Built-inMIL-STD-19500
bias resistors enable
the configuration of an inverter circuit
product for
packing input
code suffix
"G"
• RoHS
without
connecting
external
resistors
Halogen
free
product
for
packing
code
suffix "H" with complete
The bias resistors consist of thin-film resistors
Mechanical
data
isolation to allow negative biasing of the input. They also have the
advantage
UL94-V0completely
rated flameeliminating
retardant parasitic effects.
• Epoxyof: almost
Only the
on/off
conditions
need
to
be set for operation, making
• Case : Molded plastic, SOD-123H
device design easy
,
• Terminals :Plated terminals, solderable per MIL-STD-750
•
•
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
•
•
•
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.080(2.04)
.070(1.78)
Method 2026
Absolute• maximum
ratings
25кband
Polarity : Indicated
by @
cathode
.110(2.80)
For capacitive load, derate current by 20%
RATINGS
Electrical
Characteristics @ 25к
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
Symbol
Parameter
Min
Typ
Max
20
Maximum Recurrent Peak Reverse Voltage
VRRM
VI(off)
-0.5
----Input voltage (VCC=-5V, IO=-100­A)
Maximum
RMS Voltage(VO=-0.3V, IO=-10mA)
VRMS --- 14 -3.0
V
--I(on)
VMaximum
Output
voltage
=
(IO/II -10mA/-0.5mA
---VDC --- 20 -0.3
O(on)
DC
Blocking
Voltage
II
=
Input current (VI -5V)
-----0.88
Average
Forward
IMaximum
=-50V, Current
VI 0)
--- IO ---0.5
Output current
(VRectified
O(off)
CC=
GI
DC current gain (VO=-5V,
=
IO -5mA)
30 ----Peak Forward Surge Current 8.3 ms single half sine-wave
R1
Input resistance
7.0IFSM 10
13
on rated load (JEDEC method)
Rsuperimposed
Resistance
ratio
0.8
1.0
1.2
2/R1
Typical Thermal
Resistance
(Note 2)
RΘJA
Transition
frequency
fT
--250
--(VO=-10V,
IO=5mA,(Note
f=100MHz)
Typical Junction
Capacitance
1)
CJ
Operating Temperature Range
Storage Temperature Range
TJ
13
Unit
30
V
21 V
30 V
mA
­A
14
40
15
50
16
60
115
150
120
200
42
18 .008(0.20)
10
80 .003(0.08)
100
56
70
28
35
105
140
40
50
60
80
150
200
K¡
.004(0.10)MAX.1.0
30
MHz
40
120
-55 to +125
TSTG
100
.055(1.40)
.035(0.89)
.083(2.10)
.006(0.15)MIN.
Dimensions in inches and (millimeters)
Symbol
Parameter
Min
Typ
Max
Unit
Position : Any
• Mounting
VCC
Supply voltage
---50
--V
VIN
Input voltage
-40
--10
V
• Weight
: Approximated 0.011 gram
-50
IO
Output current
----mA
IC(MAX)
-100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pd
Power dissipation
--200
--mW
Ratings
atJunction
25℃ ambient
temperature unless otherwise
Tj
temperature
--- specified.
150
--ć
Single
phase
half temperature
wave, 60Hz, resistive of inductive-55
load. --T
Storage
150
ć
stg
.020(0.50)
.012(0.30)
-55 to +150
Dimensions
in inches and (millimeters)
- 65 to +175
CHARACTERISTICS
FM180-MHSolder
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
Suggested
MARKING: 14VF
Maximum Average Reverse Current at @T A=25℃
IR
@T A=125℃
Rated DC Blocking Voltage
Maximum Forward Voltage at 1.0A DC
NOTES:
0.50
0.70
0.85
Pad Layout
0.92
.800
10
.035
.900
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.9
0.5
.031
.079
2.000
2- Thermal Resistance From Junction to Ambient
inches
mm
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA114ECATHRU
PNP
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
excellent power dissipation offers
• Batch process design,
ON Characteristics
INPUT VOLTAGE
-0.3
OFF Characteristics
SOD-123H
-10
(mA)
-3
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
-1
IO
VI(ON)
(V)
better reverse leakage current and thermal resistance.
V =-0.3V
• Low profile surface mounted application inOorder to
optimize board space.
-30 • Low power loss, high efficiency.
• High current capability, low forward voltage drop.
-10 • High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
Ta=25
℃
-3 • Silicon epitaxial planar chip, metal
silicon
junction.
• Lead-free parts meet environmental standards of
Ta=100℃
MIL-STD-19500 /228
-1
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
OUTPUT CURRENT
-100
Mechanical data
0.071(1.8)
0.056(1.4)
Ta=100℃
-0.3
Ta=25℃
-0.1
-0.03
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
-0.1
: Molded -1plastic, -3SOD-123H
• Case -0.3
-30
-0.1
-10
-100
,
OUTPUTterminals,
CURRENT I solderable
(mA)
• Terminals :Plated
per MIL-STD-750
VCC=-5V
-0.01
-0.0
0.031(0.8)
Typ.
-0.4
O
-0.8
-1.2
INPUT VOLTAGE
VI(OFF)
-1.6
0.031(0.8)
-2.0 Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
—— IO
• Mounting Position G: Any
I
1000
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
VO=-5V
IO/II=20
T =100℃
a
RATINGS
30
(mV)
VO(ON)
-300
T =100℃
OUTPUT VOLTAGE
DC CURRENT GAIN
GI
Ratings at 25℃ ambient temperature unless otherwise specified.
100 phase half wave, 60Hz, resistive of inductive load.
Single
For capacitive load, derate current by 20%
a
-100 FM140-MH FM150-MH FM160-MH FM180-MH
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Ta=25℃
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
10
3
IO
Peak Forward
Surge Current 8.3 ms single half sine-wave
1
-0.3
-3
-0.1
-1
-10
-30IFSM
13
30
21
30
14
40
-30
15
50
16
60
18
80
superimposed on rated load (JEDEC method)
OUTPUT CURRENT
Typical Thermal Resistance (Note 2)
(mA)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
CO
Storage
12 Temperature Range
TJ
——
VR
35
42
56
70
105
140
60
80
100
150
200
1.0
30
-10
(mW)
(pF)
IR
PD
@T A=125℃
CO
OUTPUT CAPACITANCE
OUTPUT CURRENT
40
120
-100
-30
IO
(mA)
-55 to +150
PD —— Ta
- 65 to +175
400
NOTES:
6
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
-3
-55 to +125
VF
Maximum Average Reverse Current at @T A=25℃
-1
350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Maximum Forward Voltage at 1.0A DC
8
Rated DC
Blocking Voltage
120
200
f=1MHz
Ta=25℃
CHARACTERISTICS
10
115
150
50
TSTG
100
28
RΘJA
POWER DISSIPATION
IO
-10
-100
Ta=2510
℃
40
Maximum Average Forward Rectified Current
IO
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
VO(ON) ——
-1000
2- Thermal Resistance From Junction to Ambient
4
0.50
0.70
0.92
m
10
250
200
0.9
0.85
0.5
300
DTA114ECA
150
100
2
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
100
125
150
T (℃ELECTRONIC
)
WILLAS
CORP
AMBIENT TEMPERATURE
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA114ECATHRU
PNP
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2)forward voltage drop.
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• HighDTA114ECA–T
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storagelife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC
Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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