DTA114TCA(SOT 23)

WILLAS
FM120-M+
DTA114TCATHRU
PNP Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Features
• Low power loss, high efficiency.
SOT-23
0.146(3.7)
0.130(3.3)
Pb-Free
package
is available
current capability, low forward voltage drop.
• High
High
surge
capability.
•
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
• Ultra high-speed switching.
Epoxy meets UL 94 V-0 flammability rating
• Silicon epitaxial planar chip, metal silicon junction.
Moisure• Sensitivity
Level 1
Lead-free parts meet environmental standards of
Built-in bias
resistors
enable
MIL-STD-19500
/228 the configuration of an inverter circuit
without •connecting
external
input
resistors
RoHS product
for packing
code
suffix "G"(see equivalent circuit)
The bias Halogen
resistors
consist
resistors
with complete
free
productof
forthin-film
packing code
suffix "H"
isolationMechanical
to allow negativedata
biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
• Epoxy : UL94-V0 rated flame retardant
Only the on/off conditions need to be set for operation, making
Molded plastic, SOD-123H
• Case :easy
device design
,
• Terminals :Plated terminals, solderable per MIL-STD-750
•
•
x
x
x
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
Method 2026
VEBO
IC
RATINGS
AND
phase half
wave, 60Hz, resistiveTJof inductive -55~150
load.
JunctionSingle
Temperature
Range
For
capacitive
load,
derate
current
by
20%
Storage Temperature Range
TSTG
-55~150
к
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
.008(0.20)
Marking Code
Maximum Recurrent Peak Reverse Voltage
SymMaximum DC Blocking
Parameter
Voltage
mW
к
Electrical
Characteristics
Maximum RMS Voltage
.006(0.15)MIN.
V
V
V
mA
CHARACTERISTICS
Collector
Dissipation
200
C
Ratings
at 25℃ ambient temperature P
unless
otherwise
specified.
RATINGS
Dimensions in inches and (millimeters)
Unit
-50
-50
-5
-100
ELECTRICAL
0.031(0.8) Typ.
.110(2.80)
Emitter-Base voltage
Collector Current-Continuous
MAXIMUM
Value
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Absolute Maximum Ratings
• Polarity : Indicated by cathode
band
Parameter
Symbol
Mounting
Position
:
Any
•
Collector-Base Voltage
VCBO
Collector-Emitter
Voltage : Approximated 0.011
VCEOgram
• Weight
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
Halogen free product for packing code suffix “H”
0.012(0.3) Typ.
.083(2.10)
•
Min
VRRM
12
20
13
30
14
40
15
50
16
60
18 .003(0.08)
10
80
100
115
150
120
200
VRMS
14
21
28
35
42
56
105
140
Typ
Max
Unit
70
.055(1.40)
.035(0.89)
20
30
40
50
60
80
100
150
200
VDC
.004(0.10)MAX.
Collector-Base Breakdown Voltage
-50
----V
V(BR)CBO
=0)
(IC=-50uA,
Maximum
AverageIEForward
Rectified Current
IO
1.0
Collector-Emitter Breakdown Voltage
-- -50
--V
V(BR)CEO
IB=0)
(IC=-1mA,
Peak Forward
Surge
Current 8.3 ms single half sine-wave
30
IFSM
Emitter-Base
.020(0.50)
superimposed
on ratedBreakdown
load (JEDECVoltage
method)
-5
----V
V(BR)EBO
(IE=-50uA, IC=0)
.012(0.30)
40
TypicalCollector
Thermal Resistance
(Note 2)
RΘJA
Cut-off Current
-----0.5
uA
ICBO
120
IE=0)
Typical(V
Junction
Capacitance
(Note 1)
CJ
CB=-50V,
Dimensions
in inches-55
andto
(millimeters)
Emitter
Cut-off Current
-55 to +125
+150
Operating
Temperature
Range
T
J
-----0.5
uA
IEBO
(VEB=-4V, IC=0)
- 65 to +175
Storage Temperature Range
TSTG
DC Current Gain
100
250
600
--h FE
(VCE=-5V, IC=-1mA)
Suggested Solder
Collector-Emitter
Saturation Voltage
CHARACTERISTICS
--- SYMBOL
--- FM120-MH
-0.3 FM130-MH
V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VCE(sat)
=-10mA,
I
=-1mA)
(I
Pad Layout
C
B
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
13
K¡
7
10
R1
Input Resistor
.031
0.5
Maximum Average Reverse Current at @T A=25℃
Transition Frequency
IR
.800
--250
--MHz
fT
10
Rated DC
=-10V, IVoltage
(VCEBlocking
C=-5mA, f=100MHz)@T A=125℃
NOTES:
.035
.900
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.079
2.000
*Marking: 94
2- Thermal Resistance From Junction to Ambient
inches
mm
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA114TCA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
14
40
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA114TCATHRU
PNP Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Features
Pb Free Product
PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
forward voltage drop.
• High current capability,(1)low(2)
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High DTA114TCA–T
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
Similar pages