BAT4xW(SOD 123)

WILLAS
FM120-M+
BAT4xWTHRU
FM1200-M+
SOD-123 Plastic-Encapsulate Diode
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
SCHOTTKY
FeaturesDIODE
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
SOD-123
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
Features
·
·
·
·
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
Voltage Drop
High Forward
surge capability.
• Low
Switching
Time protection.
Guardring
for overvoltage
• Fast
Ultra high-speed
switching. Ideally Suited for
• Surface
Mount Package
Insertion
Silicon epitaxial
planar chip, metal silicon junction.
• Automatic
Lead-freepackage
parts meet
• Pb-Free
isenvironmental
available standards of
MIL-STD-19500 /228
product
packing
RoHS product
forfor
packing
codecode
suffix suffix
"G" ”G”
• RoHS
Halogen free
for packing
code suffix
Halogen
freeproduct
product
for packing
code"H"
suffix “H”
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
· Mechanical
dataLevel 1
Moisture Sensitivity
· • Polarity:
Color
band
cathode end
Epoxy : UL94-V0 rateddenotes
flame retardant
Marking:
• Case : Molded plastic, SOD-123H
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
BAT42W:S7
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
BAT43W:S8
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Maximum
Ratings @ TA = 25°C unless otherwise specified
• Mounting Position : Any
• Weight : Approximated
0.011 gram
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak
Reverse Voltage
MAXIMUM
RATINGS AND ELECTRICAL
DC Blocking Voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
RMS Reverse Voltage
Single phase half wave, 60Hz, resistive of inductive load.
Continuous
Current
(Note
1)
For Forward
capacitive
load, derate
current
by 20%
Repetitive Peak Forward Current (Note 1)
@ t < 1.0s
RATINGS
BAT42W / BAT43W
VRRM
VRWM
CHARACTERISTICS
VR
Non-Repetitive Peak Forward Surge Current @ t < 10ms
Power Dissipation
VRRM
Thermal Resistance Junction to Ambient Air (Note 1)
Maximum RMS Voltage
VRMS
Operating and Storage Temperature Range
Maximum DC Blocking Voltage
VDC
Maximum Recurrent Peak Reverse Voltage
VR(RMS)
21
V
IFM
200
mA
IFRM
500
mA
12
20
14
20
IFSM
13
30Pd
R
21 qJA
Tj , TSTG
30
14
40
15
50
28
35
40
50
IO
@ TA = 25°C
unless otherwise specified
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Characteristic
Symbol
Min
superimposed on rated load (JEDEC
method)
Maximum Average Forward Rectified Current
Electrical Characteristics
Forward Voltage Drop
All
Types
RΘJA
BAT42W
CJ
BAT42W
TJ
BAT43W
TSTG
BAT43W
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Maximum Peak Reverse Current
CHARACTERISTICS
Junction
Capacitance
Maximum
Forward
Voltage at 1.0A DC
Maximum
Average
Reverse
Current at @T A=25℃
Reverse
Recovery
Time
Rated DC Blocking Voltage
Rectification Efficiency
NOTES:
V
30
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Unit
@T A=125℃
¾
¾
VFM
¾
-55 to +125
0.26
¾
Max
1.0
0.40
0.65
0.33
0.45
4.0
16
500
60
200
42
-55 to +125
60
18
80
10
100
A
115
mW 150
70 °C /W 105
°C
100
150
56
80
1.0
30
Unit
120
200
Volts
140
Volts
200
Volts
Amps
Test Condition
IF = 200mA
IF = 10mA
IF = 50mA
to +150
IF =-55
2.0mA
- 65 to +175 IF = 15mA
40
120
V
2- Thermal
Junction
Ambient are kept at ambient temperature.
Notes: Resistance
1. ValidFrom
provided
thattoterminals
2012-11
℃/W
PF
℃
℃
VR = 25V
500
nA
IRM
¾
100 FM160-MH
mA FM180-MH
VR =FM1100-MH
25V, Tj = 100°C
FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
V
=
1.0, f = 1.0MHz
C
¾
10 0.70
pF
R0.85
Volts
0.9
j
0.92
VF
0.50
IF = IR = 10mA,
0.5
trr
¾
5.0
ns
IR
mAmps
Irr = 0.1 x IR, RL = 100W
10
RL = 15W, CL = 300pF,
hv
80
¾
%
f = 45MHz, VRF = 2.0V
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Amps
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT4xWTHRU
FM1200-M+
SOD-123 Plastic-Encapsulate Diode
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
SOD-123 Plastic-Encapsulate Diode
FM120-M+
BAT4xWTHRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOD-123H
SOD-123
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data .154(3.90)
Method 2026
.114(2.90)
• Polarity : Indicated by cathode band
• Mounting Position : Any .098(2.50)
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.071(1.80)
.055(1.40)
.018(0.45)
.039(1.00)
• Epoxy : UL94-V0 rated flame retardant
.130(3.30)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
.053(1.35)
.027(0.70)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
18
80
10
100
115
150
.004(0.1)MAX.
56
70
105
80
100
150
120
200
Volts
140
Volts
200
Volts
1.0
30
40
.008(0.20)MAX. 120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
.016(0.40)MIN.
I
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.50
0.70
0.85
0.5
R
.018(0.45)
.010(0.25)
0.9
0.92
Volts
10
mAm
Dimensions in inches and (millimeters)
2012-06
2012-11
WILLAS ELECTRONIC
Rev.DCORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT4xWTHRU
FM1200-M+
SOD-123 Plastic-Encapsulate Diode
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize boardInformation:
space.
Ordering
0.146(3.7)
• Low power loss, high efficiency.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(1) (2)
capability.
• High surge
Part Number ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Packing code, Tape & Reel Packing Ultra high-speed
switching.
•Note: (1)
epitaxial planar chip, metal silicon junction.
• Silicon(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical
data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amps
Maximum Average
Forward Rectified Current
IO
1.0
Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-55 to +125
-55 to +150
TJ
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmp
10
@T
A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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