S1A S1M(HSMB)

S1A
WILLAS
THRU
.0A03 6,/,&21 RECTIFIERS -0V- 00V
S1M
+SMB PACKAGE
FEATURES
H
* Extermely low thermal resistance
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Pb free plating 99% Sn above
Cathode Band
J
MECHANICAL DATA
A
* Case: DO-214AA/+SMB Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
E
D
F
* Mounting position: Any
C
B
G
* Weight: 0.098 gram
DIMENSIONS
INCHES
MIN
.078
.075
.002
----.035
.065
.205
.160
.130
DIM
A
B
C
D
E
F
G
H
J
MM
MIN
1.98
1.90
.05
----.90
1.65
5.21
4.06
3.30
MAX
.116
.089
.008
.02
.055
.091
.224
.180
.155
MAX
2.95
2.25
.20
.51
1.40
2.32
5.69
4.57
3.94
NOTE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
SYMBOL
VRRM
VRMS
VDC
S1A
S1B
S1D
S1G
S1J
S1K
S1M
S1A
S1B
S1D
S1G
S1J
S1K
S1M
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
UNIT
Volts
Volts
Volts
IO
1.0
Amps
IFSM
30
Amps
Typical Thermal Resistance (Note 2)
RΘJL
30
℃/W
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CJ
TJ
TSTG
12
-55 to +150
-55 to +150
PF
at TJ = 100℃
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage at 0A DC(Note 3)
Maximum Average Reverse Current at
@TA=25℃
Rated DC Blocking Voltage
@TA=125℃
VF
IR
S1A
S1B
S1D
S1G
1.10
5.0
150
℃
℃
S1J
S1K
S1M
UNIT
Volts
μAmps
NOTES :1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal, 10.0X10.0mm2 copper pads to each terminal.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
S1A
FM120-M+
THRU
THRU
.0A03 6,/,&21 RECTIFIERS -0V- 00V
FM1200-M+
S1M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
-20V- 200V
+SMB PACKAGE
SOD-123+ PACKAGE
Package outline
Features
•
Figure 3
Maximum Overload Surge Current
SOD-123H
Figure
1
Batch
process
design, excellent power dissipation offers
Typical
Forward
Characteristics
better
reverse
leakage
current and thermal resistance.
20 profile surface mounted application in order to
• Low
optimize board space.
36
10 power loss, high efficiency.
• Low
current capability, low forward voltage drop.
• High
6
• High surge capability.
for overvoltage protection.
• Guardring
4
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
2
• Lead-free parts meet environmental standards of
Amps
0.071(1.8)
0.056(1.4)
18
12
6
1
• Epoxy : UL94-V0 rated flame retardant
.2 : Molded plastic, SOD-123H
• Case
,
25°C
• Terminals
:Plated terminals, solderable per MIL-STD-750
.1
10
Cycles
100
0.040(1.0)
0.024(0.6)
Peak 0.031(0.8)
Forward
Current - Amperesversus
Typ.
Number of Cycles at 60Hz
Method 2026
0.031(0.8) Typ.
Figure 4
Dimensions
Forward Derating
Curve in inches and (millimeters)
• Polarity : Indicated by cathode band
.04
Position : Any
• Mounting
• Weight : Approximated 0.011 gram
1.4
1.2
.02
0.012(0.3) Typ.
24
Mechanical
data
.4
0.146(3.7)
0.130(3.3)
30
/228
1
AmpsMIL-STD-19500
• RoHS product for packing code suffix "G"
.6
Halogen
free product for packing code suffix "H"
.06
Pb Free Product
1.0
.01 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.4
.4
.6
.8
1.0 otherwise
1.2
Amps
Ratings at 25℃ ambient temperature
unless
specified.
.8
Voltsof inductive load.
Single phase half wave, 60Hz, resistive
ForwardbyCurrent
.6
For capacitiveInstantaneous
load, derate current
20% - Amperesversus
Instantaneous Forward Voltage - Volts
SYMBOL FM120-MH FM130-MH
RATINGS
.4 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Resistive
or15
12
13
14
16
18
10
115
120
.2 Inductive Load
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
Maximum RMS Voltage
VRMS
14
21 0
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
Figure
2 Current 8.3 ms single half sine-wave
Peak Forward
Surge
Junction Capacitance
superimposed on rated load (JEDEC method)
100
Typical Junction
Capacitance (Note 1)
CJ
Operating
60Temperature Range
TJ
Storage Temperature Range
CHARACTERISTICS
20
NOTES:
40
120
-55 to +125
@T A=125℃
2- Thermal1Resistance From Junction to Ambient
2012-10
.2
.4
1
Volts
200
Volts
Amps
Amps
℃/W
PF
℃
- 65 to +175
℃
0.50
0.70
0.85
0.9
0.5
IR
10
4
.1
Volts
2 at 1 MHZ and applied reverse voltage of 4.0 VDC.
1- Measured
140
-55 to +150
Typical
Distribution
VF
10
Maximum Average Reverse Current at @T A=25℃
35
60
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum
Forward Voltage at 1.0AMedian
DC
pF
Rated DC6Blocking Voltage
40
TSTG
40
28
20
40
RΘJA
Typical Thermal Resistance (Note 2)
42
56
70
105
80 100 120 140 160 180 200
60
80
100
150
°C
Average Forward Rectified1.0
Current - Amperesversus
Ambient Temperature - °C 30
0
2
4
10
20
40
100
200
400
1000
WILLAS ELECTRONIC CORP.
0.92
Volts
mAmp